NTD4860N-1G [ONSEMI]
单 N 沟道，功率 MOSFET，25V，65A，7.5mΩ;
| 型号： | NTD4860N-1G |
| 厂家： | 
ONSEMI |
| 描述： | 单 N 沟道，功率 MOSFET，25V，65A，7.5mΩ 开关 脉冲 晶体管 |
| 文件： | 总9页 (文件大小：198K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ON Semiconductor
Is Now
To learn more about onsemi™, please visit our website at
www.onsemi.com
onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or
subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi
product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without
notice. The information herein is provided “as-is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality,
or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all
liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws,
regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdonsemi and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
NTD4860N
MOSFET – Power, Single,
N-Channel, DPAK/IPAK
25 V, 65 A
Features
http://onsemi.com
• Trench Technology
• Low R
• Low Capacitance to Minimize Driver Losses
• Optimized Gate Charge to Minimize Switching Losses
• These are Pb−Free Devices
to Minimize Conduction Losses
DS(on)
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
7.5 mW @ 10 V
25 V
65 A
11.1 mW @ 4.5 V
D
Applications
• VCORE Applications
• DC−DC Converters
• High/Low Side Switching
N−Channel
G
S
4
MAXIMUM RATINGS (T = 25°C unless otherwise stated)
J
4
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
Symbol
Value
25
Unit
V
DSS
V
V
A
4
V
GS
20
Continuous Drain
Current R
I
D
T = 25°C
13
A
1
2
3
2
1
1
2
3
q
JA
3
T = 85°C
A
10
(Note 1)
DPAK
3 IPAK
CASE 369AC
(Straight Lead) (Straight Lead
DPAK) STYLE 2
IPAK
CASE 369D
Power Dissipation
T = 25°C
P
2.0
W
A
A
D
CASE 369AA
(Bent Lead)
STYLE 2
R
(Note 1)
q
JA
Continuous Drain
Current R
ID
T = 25°C
A
10.4
8.0
q
JA
T = 85°C
A
Steady
State
(Note 2)
MARKING DIAGRAMS
& PIN ASSIGNMENTS
Power Dissipation
T = 25°C
A
P
I
1.28
W
A
D
4
R
(Note 2)
q
JA
Drain
4
4
Continuous Drain
Current R
T
C
T
C
T
C
= 25°C
= 85°C
= 25°C
65
50
50
D
Drain
Drain
q
JC
(Note 1)
Power Dissipation
P
D
W
A
R
(Note 1)
q
JC
Pulsed Drain
Current
t =10ms
p
T = 25°C
A
I
DM
130
45
2
1
2
3
Drain
1
3
Gate Drain Source
Current Limited by Package
T = 25°C
A
I
A
DmaxPkg
Gate Source
1
2
3
Gate Drain Source
Operating Junction and Storage
Temperature
T ,
−55 to
+175
°C
J
T
STG
A
Y
WW
= Assembly Location*
= Year
= Work Week
Source Current (Body Diode)
Drain to Source dV/dt
I
S
42
6
A
dV/dt
EAS
V/ns
mJ
4860N = Device Code
Single Pulse Drain−to−Source Avalanche
Energy (T = 25°C, V = 50 V, V = 10 V,
84.5
G
= Pb−Free Package
J
DD
GS
* The Assembly Location code (A) is front side
optional. In cases where the Assembly Location is
stamped in the package, the front side assembly
code may be blank.
I = 13 A , L = 1.0 mH, R = 25 W)
L
pk
G
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
T
260
°C
L
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
© Semiconductor Components Industries, LLC, 2014
1
Publication Order Number:
May, 2019 − Rev. 2
NTD4860N/D
NTD4860N
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Value
3
Unit
Junction−to−Case (Drain)
R
q
JC
Junction−to−TAB (Drain)
R
3.5
75
q
JC−TAB
°C/W
Junction−to−Ambient – Steady State (Note 1)
Junction−to−Ambient – Steady State (Note 2)
R
R
q
q
JA
JA
117
1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
V
GS
= 0 V, I = 250 mA
25
V
(BR)DSS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/
21
(BR)DSS
mV/°C
T
J
Zero Gate Voltage Drain Current
I
V
= 0 V,
= 20 V
T = 25°C
1.0
10
DSS
GS
DS
J
V
mA
T = 125°C
J
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
I
V
= 0 V, V
=
20 V
100
nA
GSS
DS
GS
V
V
= V , I = 250 mA
1.45
2.5
V
GS(TH)
GS
DS
D
Negative Threshold Temperature
Coefficient
V
/T
5.2
GS(TH)
J
mV/°C
Drain−to−Source On Resistance
R
V
= 10 V
I
I
= 30 A
= 30 A
6.1
8.9
48
7.5
DS(on)
GS
D
mW
V
GS
= 4.5 V
11.1
D
Forward Transconductance
CHARGES AND CAPACITANCES
Input Capacitance
g
FS
V
= 1.5 V, I = 15 A
S
DS
D
C
1308
342
169
11
ISS
Output Capacitance
C
C
V
GS
= 0 V, f = 1.0 MHz, V = 12 V
pF
OSS
RSS
DS
Reverse Transfer Capacitance
Total Gate Charge
Q
16.5
G(TOT)
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Total Gate Charge
Q
1.2
G(TH)
V
= 4.5 V, V = 15 V, I = 30 A
nC
nC
GS
DS
D
Q
3.9
GS
GD
Q
4.7
Q
t
V
GS
= 10 V, V = 15 V, I = 30 A
21.8
G(TOT)
DS
D
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time
12.2
20.1
15.2
4.3
d(ON)
Rise Time
t
r
V
= 4.5 V, V = 15 V,
DS
GS
D
ns
I
= 15 A, R = 3.0 W
G
Turn−Off Delay Time
t
d(OFF)
Fall Time
t
f
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%.
4. Switching characteristics are independent of operating junction temperatures.
http://onsemi.com
2
NTD4860N
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified) (continued)
J
Parameter
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time
Symbol
Test Condition
Min
Typ
Max
Unit
t
7.1
17
d(ON)
Rise Time
t
r
V
V
= 11.5 V, V = 15 V,
DS
GS
D
ns
I
= 15 A, R = 3.0 W
G
Turn−Off Delay Time
t
22
d(OFF)
Fall Time
t
f
2.3
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
T = 25°C
0.9
0.76
12.7
7.0
1.2
SD
RR
J
= 0 V,
= 30 A
GS
V
I
S
T = 125°C
J
Reverse Recovery Time
Charge Time
t
t
a
ns
V
= 0 V, dIS/dt = 100 A/ms,
GS
I
S
= 30 A
Discharge Time
t
b
5.7
Reverse Recovery Charge
PACKAGE PARASITIC VALUES
Source Inductance
Q
3.5
nC
RR
L
L
L
2.49
0.0164
1.88
S
D
D
G
Drain Inductance, DPAK
Drain Inductance, IPAK
Gate Inductance
nH
T = 25°C
A
L
3.46
Gate Resistance
R
0.75
W
G
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%.
4. Switching characteristics are independent of operating junction temperatures.
http://onsemi.com
3
NTD4860N
TYPICAL PERFORMANCE CURVES
60
60
50
40
30
20
10
0
4 V
10V
V
DS
≥ 10 V
3.8 V
3.6 V
50
40
30
20
10
0
T = 25°C
J
3.4 V
3.2 V
T = 125°C
J
3.0 V
2.8 V
T = 25°C
J
T = −55°C
J
0
1
2
3
4
5
0
1
2
3
4
5
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
0.012
0.040
0.036
0.032
0.028
0.024
0.020
0.016
0.012
0.008
0.004
T = 25°C
J
I
= 30 A
D
0.011
0.010
0.009
0.008
0.007
0.006
T = 25°C
J
V
GS
= 4.5 V
V
GS
= 11.5 V
0.005
0.004
0
2
3
4
5
6
7
8
9
10
11
10
20
30
40
50
60
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
I , DRAIN CURRENT (AMPS)
D
Figure 3. On−Resistance vs. Gate−to−Source
Figure 4. On−Resistance vs. Drain Current and
Voltage
Gate Voltage
1.8
1.6
1.4
1.2
1.0
0.8
0.6
10000
1000
V
= 0 V
GS
I
V
= 30 A
D
= 10 V
GS
T = 150°C
J
T = 125°C
J
100
10
−50 −25
0
25
50
75 100 125 150 175
2
4
6
8
10
12
14
16
18
20
T , JUNCTION TEMPERATURE (°C)
J
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 5. On−Resistance Variation with
Figure 6. Drain−to−Source Leakage Current
Temperature
vs. Drain Voltage
http://onsemi.com
4
NTD4860N
TYPICAL PERFORMANCE CURVES
10
2000
1500
1000
500
0
Q
V
= 0 V
T
GS
T = 25°C
J
8
6
4
2
0
C
iss
V
GS
Q
Q
1
2
C
oss
I
D
= 30 A
C
rss
T = 25°C
J
0
5
10
15
20
25
0
5
10
15
20
25
DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Q , TOTAL GATE CHARGE (nC)
G
Figure 7. Capacitance Variation
Figure 8. Gate−To−Source and Drain−To−Source
Voltage vs. Total Charge
1000
30
V
DD
= 15 V
V
GS
= 0 V
I
V
= 15 A
D
T = 25°C
J
25
20
15
10
5
= 11.5 V
GS
100
10
1
t
d(off)
t
r
t
d(on)
t
f
0
1
10
R , GATE RESISTANCE (OHMS)
100
0.4
0.5
0.6
0.7
0.8
0.9
1.0
V
, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
G
SD
Figure 9. Resistive Switching Time
Variation vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
1000
100
10
100
90
80
70
60
50
40
30
20
I
= 13 A
D
10 ms
100 ms
V
= 20 V
1 ms
GS
SINGLE PULSE
= 25°C
10 ms
dc
T
C
1
R
LIMIT
DS(on)
THERMAL LIMIT
PACKAGE LIMIT
10
0
0.1
0.1
1
10
100
25
50
75
100
125
150
175
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
T , JUNCTION TEMPERATURE (°C)
J
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
http://onsemi.com
5
NTD4860N
TYPICAL PERFORMANCE CURVES
1.0
D = 0.5
0.2
0.1
0.05
0.02
P
(pk)
0.1
R
(t) = r(t) R
q
JC
q
JC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
0.01
SINGLE PULSE
t
1
1
t
2
T
J(pk)
− T = P
R
q
JC
(t)
C
(pk)
DUTY CYCLE, D = t /t
1
2
0.01
1.0E-05
1.0E-04
1.0E-03
1.0E-02
t, TIME (ms)
1.0E-01
1.0E+00
1.0E+01
Figure 13. Thermal Response
Package
ORDERING INFORMATION
Device
†
Shipping
NTD4860NT4G
DPAK
(Pb−Free)
2500 / Tape & Reel
NTD4860N−1G
NTD4860N−35G
IPAK
75 Units / Rail
75 Units / Rail
(Pb−Free)
IPAK Trimmed Lead
(3.5 0.15 mm)
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
6
NTD4860N
PACKAGE DIMENSIONS
DPAK (SINGLE GUAGE)
CASE 369AA
ISSUE B
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. THERMAL PAD CONTOUR OPTIONAL WITHIN DI-
MENSIONS b3, L3 and Z.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
NOT EXCEED 0.006 INCHES PER SIDE.
5. DIMENSIONS D AND E ARE DETERMINED AT THE
OUTERMOST EXTREMES OF THE PLASTIC BODY.
6. DATUMS A AND B ARE DETERMINED AT DATUM
PLANE H.
C
A
D
A
E
c2
b3
B
4
2
L3
L4
Z
H
DETAIL A
1
3
INCHES
DIM MIN MAX
0.086 0.094
A1 0.000 0.005
0.025 0.035
MILLIMETERS
MIN
2.18
0.00
0.63
0.76
4.57
0.46
0.46
5.97
6.35
MAX
2.38
0.13
0.89
1.14
5.46
0.61
0.61
6.22
6.73
A
b2
c
b
b
b2 0.030 0.045
b3 0.180 0.215
M
0.005 (0.13)
C
H
e
c
0.018 0.024
c2 0.018 0.024
GAUGE
SEATING
L2
PLANE
C
D
E
e
0.235 0.245
0.250 0.265
0.090 BSC
PLANE
2.29 BSC
9.40 10.41
1.40 1.78
2.74 REF
0.51 BSC
0.89 1.27
H
L
L1
L2
0.370 0.410
0.055 0.070
0.108 REF
L
A1
L1
0.020 BSC
DETAIL A
L3 0.035 0.050
ROTATED 905 CW
L4
Z
−−− 0.040
0.155 −−−
−−−
3.93
1.01
−−−
STYLE 2:
PIN 1. GATE
2. DRAIN
SOLDERING FOOTPRINT*
3. SOURCE
4. DRAIN
6.20
0.244
3.00
0.118
2.58
0.102
5.80
0.228
1.60
0.063
6.17
0.243
mm
inches
ǒ
Ǔ
SCALE 3:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
7
NTD4860N
PACKAGE DIMENSIONS
3 IPAK, STRAIGHT LEAD
CASE 369AC
ISSUE O
NOTES:
1.. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2.. CONTROLLING DIMENSION: INCH.
3. SEATING PLANE IS ON TOP OF
DAMBAR POSITION.
4. DIMENSION A DOES NOT INCLUDE
DAMBAR POSITION OR MOLD GATE.
B
R
C
V
E
INCHES
DIM MIN MAX
MILLIMETERS
MIN
5.97
6.35
2.19
0.69
0.46
0.94
MAX
6.22
6.73
2.38
0.88
0.58
1.09
A
B
C
D
E
F
G
H
J
K
R
V
W
0.235 0.245
0.250 0.265
0.086 0.094
0.027 0.035
0.018 0.023
0.037 0.043
0.090 BSC
0.034 0.040
0.018 0.023
0.134 0.142
0.180 0.215
0.035 0.050
A
K
SEATING PLANE
W
2.29 BSC
F
0.87
0.46
3.40
4.57
0.89
1.01
0.58
3.60
5.46
1.27
0.25
J
G
H
D 3 PL
0.000 0.010 0.000
0.13 (0.005) W
IPAK
CASE 369D
ISSUE C
C
B
R
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
V
E
2. CONTROLLING DIMENSION: INCH.
INCHES
DIM MIN MAX
MILLIMETERS
4
2
MIN
5.97
6.35
2.19
0.69
0.46
0.94
MAX
6.35
6.73
2.38
0.88
0.58
1.14
Z
A
B
C
D
E
F
G
H
J
K
R
S
V
Z
0.235 0.245
0.250 0.265
0.086 0.094
0.027 0.035
0.018 0.023
0.037 0.045
0.090 BSC
0.034 0.040
0.018 0.023
0.350 0.380
0.180 0.215
0.025 0.040
0.035 0.050
A
K
S
1
3
−T−
SEATING
PLANE
2.29 BSC
0.87
0.46
8.89
4.45
0.63
0.89
3.93
1.01
0.58
9.65
5.45
1.01
1.27
−−−
J
F
H
0.155
−−−
D 3 PL
STYLE 2:
PIN 1. GATE
2. DRAIN
G
M
T
0.13 (0.005)
3. SOURCE
4. DRAIN
ON Semiconductor and the
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed
at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation
or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets
and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each
customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended,
or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which
the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or
unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim
alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable
copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
For additional information, please contact your local
Sales Representative
NTD4860N/D
相关型号：
SI9130DB
5- and 3.3-V Step-Down Synchronous ConvertersWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9135LG-T1
SMBus Multi-Output Power-Supply ControllerWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9135LG-T1-E3
SMBus Multi-Output Power-Supply ControllerWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9135_11
SMBus Multi-Output Power-Supply ControllerWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9136_11
Multi-Output Power-Supply ControllerWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9130CG-T1-E3
Pin-Programmable Dual Controller - Portable PCsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9130LG-T1-E3
Pin-Programmable Dual Controller - Portable PCsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9130_11
Pin-Programmable Dual Controller - Portable PCsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9137
Multi-Output, Sequence Selectable Power-Supply Controller for Mobile ApplicationsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9137DB
Multi-Output, Sequence Selectable Power-Supply Controller for Mobile ApplicationsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9137LG
Multi-Output, Sequence Selectable Power-Supply Controller for Mobile ApplicationsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9122E
500-kHz Half-Bridge DC/DC Controller with Integrated Secondary Synchronous Rectification DriversWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
©2020 ICPDF网 联系我们和版权申明