NTD5805NT4G [ONSEMI]
Power MOSFET 40 V, 51 A, Single N−Channel, DPAK; 功率MOSFET的40 V ， 51 A单N沟道， DPAK
| 型号： | NTD5805NT4G |
| 厂家： | 
ONSEMI |
| 描述： | Power MOSFET 40 V, 51 A, Single N−Channel, DPAK |
| 文件： | 总6页 (文件大小：128K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NTD5805N
Power MOSFET
40 V, 51 A, Single N−Channel, DPAK
Features
• Low R
DS(on)
• High Current Capability
• Avalanche Energy Specified
• These are Pb−Free Devices
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V
R
MAX
I MAX
D
(BR)DSS
DS(on)
Applications
16 mW @ 5.0 V
9.5 mW @ 10 V
40 V
51 A
• LED Backlight Driver
• CCFL Backlight
• DC Motor Control
D
• Power Supply Secondary Side Synchronous Rectification
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
G
Parameter
Drain−to−Source Voltage
Symbol
Value
40
Unit
V
V
DSS
S
Gate−to−Source Voltage − Continuous
V
"20
"30
V
GS
GS
N−CHANNEL MOSFET
Gate−to−Source Voltage
V
V
4
− Non−Repetitive (t < 10 mS)
p
4
Continuous Drain
T
= 25°C
= 100°C
= 25°C
I
51
36
47
A
C
D
Current (R
(Note 1)
)
q
JC
Steady
State
T
C
2
1
3
1
Power Dissipation
(R ) (Note 1)
T
C
P
W
D
2
3
q
JC
DPAK
DPAK
CASE 369C
(Surface Mount)
STYLE 2
Pulsed Drain Current
t = 10 ms
I
85
A
p
DM
CASE 369D
(Straight Lead)
STYLE 2
Operating Junction and Storage Temperature
T , T
J
−55 to
175
°C
stg
Source Current (Body Diode)
I
30
80
A
S
MARKING DIAGRAMS
& PIN ASSIGNMENT
Single Pulse Drain−to−Source Avalanche
E
AS
mJ
Energy (V = 50 V, V = 10 V, R = 25 W,
DD
GS
G
4
I
= 40 A, L = 0.1 mH, V = 40 V)
L(pk)
DS
Drain
4
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
260
°C
Drain
L
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
2
THERMAL RESISTANCE MAXIMUM RATINGS
Drain
1
3
Gate Source
Parameter
Symbol
Value
Unit
1
2
3
Gate Drain Source
Junction−to−Case (Drain)
R
3.2
°C/W
q
JC
Y
WW
= Year
= Work Week
Junction−to−Ambient − Steady State (Note 1)
R
107
q
JA
1. Surface−mounted on FR4 board using 1 in sq pad size
5805N = Device Code
G
(Cu area = 1.127 in sq [1 oz] including traces.
= Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
© Semiconductor Components Industries, LLC, 2009
1
Publication Order Number:
March, 2009 − Rev. 0
NTD5805N/D
NTD5805N
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
V
GS
= 0 V, I = 250 mA
40
V
(BR)DSS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/T
J
40.8
mV/°C
(BR)DSS
Zero Gate Voltage Drain Current
I
T = 25°C
1.0
100
100
mA
DSS
J
V
= 0 V,
GS
DS
V
= 40 V
T = 150°C
J
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
I
V
= 0 V, V
=
20 V
nA
GSS
DS
GS
GS
V
V
= V , I = 250 mA
1.5
3.5
V
GS(TH)
DS
D
Negative Threshold Temperature
Coefficient
V
/T
7.04
mV/°C
GS(TH)
J
Drain−to−Source On Resistance
R
V
= 10 V, I = 15 A
7.6
9.5
16
mW
S
DS(on)
GS
D
V
GS
= 5.0 V, I = 10 A
10.9
8.54
D
Forward Transconductance
gFS
V
= 15 V, I = 15 A
DS D
CHARGES, CAPACITANCES AND GATE RESISTANCES
Input Capacitance
C
1725
220
160
33
pF
iss
V
= 0 V, f = 1.0 MHz,
DS
GS
Output Capacitance
C
oss
V
= 25 V
Reverse Transfer Capacitance
Total Gate Charge
C
rss
Q
80
nC
ns
G(TOT)
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
SWITCHING CHARACTERISTICS (Note 3)
Turn−On Delay Time
Rise Time
Q
2.0
G(TH)
V
V
= 10 V, V = 32 V,
DS
GS
I
D
= 30 A
Q
7.2
GS
Q
9.8
GD
t
10.2
17.9
22.9
4.5
d(on)
t
r
= 10 V, V = 32 V,
GS
DD
I
= 30 A, R = 2.5 W
D
G
Turn−Off Delay Time
Fall Time
t
d(off)
t
f
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
T = 25°C
0.83
0.65
24.8
14.6
10.2
15.5
1.2
V
SD
J
V
S
= 0 V,
GS
I
= 10 A
T = 150°C
J
Reverse Recovery Time
Charge Time
t
ns
RR
ta
V
GS
= 0 V, dIs/dt = 100 A/ms,
I
S
= 30 A
Discharge Time
tb
Reverse Recovery Charge
Q
nC
RR
2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperatures.
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2
NTD5805N
TYPICAL CHARACTERISTICS
100
90
80
70
60
50
40
30
20
100
10 V
T = 25°C
V
DS
≥ 10 V
5.2 V
5.0 V
J
75
50
V
GS
= 7 V − 5.5 V
4.5 V
T = 100°C
J
25
0
4.0 V
3.5 V
T = 25°C
J
10
0
T = −55°C
J
0
0.5
1
1.5
2
2.5
3
2
3
4
5
6
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
0.021
0.019
0.017
0.015
0.013
0.011
0.05
0.04
T = 25°C
I
= 30 A
J
D
T = 25°C
J
0.03
0.02
0.01
0
V
= 5 V
GS
V
= 10 V
45
GS
0.009
0.007
4
5
6
7
8
9
10
10
15
20
25
30
35
40
50
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 3. On−Resistance vs. Drain Current
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
10,000
1000
100
1.9
1.8
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
V
GS
= 0 V
I
V
= 51 A
D
= 10 V
GS
T = 150°C
J
T = 100°C
J
10
−50 −25
0
25
50
75
100 125 150 175
2
12
, DRAIN−TO−SOURCE VOLTAGE (V)
DS
22
32
42
T , JUNCTION TEMPERATURE (°C)
J
V
Figure 5. On−Resistance Variation with
Figure 6. Drain−to−Source Leakage Current
Temperature
vs. Voltage
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3
NTD5805N
TYPICAL CHARACTERISTICS
3000
2000
40
30
20
20
V
= 0 V
GS
T = 25°C
J
15
10
C
iss
V
DS
QT
V
GS
Q
Q
1000
0
gs
gd
5
0
10
0
C
oss
I
= 30 A
D
T = 25°C
C
J
rss
10
Vgs
5
0
5
10
Vds
15 20 25 30 35 40
0
10
20
30
40
Q , TOTAL GATE CHARGE (nC)
g
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V)
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
Figure 7. Capacitance Variation
1000
100
10
30
20
10
0
V
= 0 V
GS
V
= 32 V
= 30 A
= 10 V
DD
T = 25°C
J
I
D
t
d(off)
V
GS
t
f
t
r
t
d(on)
1
1
10
R , GATE RESISTANCE (W)
100
0.4
0.5
0.6
, SOURCE−TO−DRAIN VOLTAGE (V)
SD
0.7
0.8
0.9
1.0
V
G
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
ORDERING INFORMATION
Order Number
†
Package
Shipping
NTD5805NG
DPAK (Straight Lead)
75 Units / Rail
(Pb−Free)
NTD5805NT4G
DPAK
(Pb−Free)
2500 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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4
NTD5805N
PACKAGE DIMENSIONS
DPAK
CASE 369C−01
ISSUE O
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
SEATING
PLANE
−T−
C
B
R
INCHES
DIM MIN MAX
MILLIMETERS
E
V
MIN
5.97
6.35
2.19
0.69
0.46
0.94
MAX
6.22
6.73
2.38
0.88
0.58
1.14
A
B
C
D
E
F
G
H
J
0.235 0.245
0.250 0.265
0.086 0.094
0.027 0.035
0.018 0.023
0.037 0.045
0.180 BSC
0.034 0.040
0.018 0.023
0.102 0.114
0.090 BSC
4
2
Z
A
K
S
1
3
4.58 BSC
U
0.87
0.46
2.60
1.01
0.58
2.89
K
L
2.29 BSC
F
J
R
S
U
V
Z
0.180 0.215
0.025 0.040
4.57
0.63
0.51
0.89
3.93
5.45
1.01
−−−
1.27
−−−
L
H
0.020
0.035 0.050
0.155 −−−
−−−
D 2 PL
M
G
0.13 (0.005)
T
STYLE 2:
PIN 1. GATE
2. DRAIN
SOLDERING FOOTPRINT*
3. SOURCE
4. DRAIN
6.20
3.0
0.244
0.118
2.58
0.101
5.80
0.228
1.6
0.063
6.172
0.243
mm
inches
ǒ
Ǔ
SCALE 3:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
5
NTD5805N
PACKAGE DIMENSIONS
DPAK
CASE 369D−01
ISSUE B
C
B
R
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
V
S
E
2. CONTROLLING DIMENSION: INCH.
INCHES
DIM MIN MAX
MILLIMETERS
4
2
MIN
5.97
6.35
2.19
0.69
0.46
0.94
MAX
6.35
6.73
2.38
0.88
0.58
1.14
Z
A
B
C
D
E
F
G
H
J
K
R
S
V
Z
0.235 0.245
0.250 0.265
0.086 0.094
0.027 0.035
0.018 0.023
0.037 0.045
0.090 BSC
0.034 0.040
0.018 0.023
0.350 0.380
0.180 0.215
0.025 0.040
0.035 0.050
A
K
1
3
−T−
SEATING
PLANE
2.29 BSC
0.87
0.46
8.89
4.45
0.63
0.89
3.93
1.01
0.58
9.65
5.45
1.01
1.27
−−−
J
F
H
0.155
−−−
D 3 PL
STYLE 2:
PIN 1. GATE
2. DRAIN
G
M
T
0.13 (0.005)
3. SOURCE
4. DRAIN
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
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PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
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Phone: 421 33 790 2910
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For additional information, please contact your local
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NTD5805N/D
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