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NTD5806N [ONSEMI]

Power MOSFET 40 V, 33 A, Single N−Channel, DPAK/IPAK; 功率MOSFET的40 V ， 33 A单N沟道， DPAK / IPAK
NTD5806N
型号： NTD5806N
厂家： ONSEMI    ONSEMI
描述：

Power MOSFET 40 V, 33 A, Single N−Channel, DPAK/IPAK
功率MOSFET的40 V ， 33 A单N沟道， DPAK / IPAK
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NTD5806N  
Power MOSFET  
40 V, 33 A, Single N−Channel, DPAK/IPAK  
Features  
• Low R  
DS(on)  
• High Current Capability  
• Avalanche Energy Specified  
• These are Pb−Free Devices  
http://onsemi.com  
V
R
MAX  
I MAX  
D
(BR)DSS  
DS(on)  
Applications  
26 mW @ 4.5 V  
19 mW @ 10 V  
40 V  
33 A  
• CCFL Backlight  
• DC Motor Control  
• Power Supply Secondary Side Synchronous Rectification  
D
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Parameter  
Drain−to−Source Voltage  
Symbol  
Value  
40  
Unit  
V
V
DSS  
G
Gate−to−Source Voltage − Continuous  
Gate−to−Source Voltage  
V
"20  
"30  
V
GS  
V
GS  
V
S
− Non−Repetitive (t < 10 mS)  
p
N−CHANNEL MOSFET  
Continuous Drain  
T
= 25°C  
= 100°C  
= 25°C  
I
33  
23  
40  
A
C
D
4
Current (R  
(Note 1)  
)
q
JC  
Steady  
State  
T
C
4
Power Dissipation  
(R ) (Note 1)  
T
C
P
W
D
2
1
q
JC  
3
1
Pulsed Drain Current  
t = 10 ms  
I
67  
A
2
p
DM  
3
DPAK  
Operating Junction and Storage Temperature  
T , T  
−55 to  
175  
°C  
J
stg  
IPAK  
CASE 369C  
(Surface Mount)  
STYLE 2  
CASE 369D  
(Straight Lead  
DPAK)  
Source Current (Body Diode)  
I
33  
39  
A
S
Single Pulse Drain−to−Source Avalanche  
E
AS  
mJ  
Energy (V = 50 V, V = 10 V, R = 25 W,  
DD  
GS  
G
MARKING DIAGRAMS  
& PIN ASSIGNMENT  
I
= 28 A, L = 0.1 mH, V = 40 V)  
L(pk)  
DS  
Lead Temperature for Soldering Purposes  
(1/8″ from case for 10 s)  
T
260  
°C  
L
4
Drain  
4
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
Drain  
THERMAL RESISTANCE MAXIMUM RATINGS  
Parameter  
Symbol  
Value  
Unit  
2
Drain  
1
3
Junction−to−Case (Drain)  
R
3.7  
°C/W  
q
JC  
Gate Source  
1
2
3
Junction−to−Ambient − Steady State (Note 1)  
R
57.5  
q
JA  
Gate Drain Source  
1. Surface−mounted on FR4 board using 1 in sq pad size  
Y
WW  
= Year  
= Work Week  
(Cu area = 1.127 in sq [1 oz] including traces.  
5806N = Device Code  
G
= Pb−Free Package  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 5 of this data sheet.  
© Semiconductor Components Industries, LLC, 2010  
1
Publication Order Number:  
February, 2010 − Rev. 3  
NTD5806N/D  
 
NTD5806N  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
J
Parameter  
Symbol  
Test Condition  
Min  
Typ  
Max  
Unit  
OFF CHARACTERISTICS  
Drain−to−Source Breakdown Voltage  
V
V
GS  
= 0 V, I = 250 mA  
40  
45.5  
29.5  
V
(BR)DSS  
D
Drain−to−Source Breakdown Voltage  
Temperature Coefficient  
V
/T  
mV/°C  
(BR)DSS  
J
Zero Gate Voltage Drain Current  
I
T = 25°C  
1.0  
100  
100  
mA  
DSS  
J
V
= 0 V,  
GS  
DS  
V
= 40 V  
T = 150°C  
J
Gate−to−Source Leakage Current  
ON CHARACTERISTICS (Note 2)  
Gate Threshold Voltage  
I
V
= 0 V, V  
=
20 V  
nA  
GSS  
DS  
GS  
GS  
V
V
= V , I = 250 mA  
1.4  
2.5  
V
GS(TH)  
DS  
D
Negative Threshold Temperature  
Coefficient  
V
/T  
5.8  
mV/°C  
GS(TH)  
J
Drain−to−Source On Resistance  
R
V
= 10 V, I = 15 A  
12.7  
17.8  
19  
26  
mW  
pF  
DS(on)  
GS  
D
V
GS  
= 4.5 V, I = 10 A  
D
CHARGES, CAPACITANCES AND GATE RESISTANCES  
Input Capacitance  
Output Capacitance  
Reverse Transfer Capacitance  
Total Gate Charge  
C
860  
130  
100  
17  
iss  
V
GS  
= 0 V, f = 1.0 MHz,  
C
oss  
V
DS  
= 25 V  
C
rss  
Q
38  
nC  
G(TOT)  
Threshold Gate Charge  
Gate−to−Source Charge  
Gate−to−Drain Charge  
SWITCHING CHARACTERISTICS (Note 3)  
Turn−On Delay Time  
Rise Time  
Q
0.95  
3.4  
G(TH)  
V
= 10 V, V = 20 V,  
DS  
GS  
I
= 30 A  
D
Q
GS  
Q
4.5  
GD  
t
10.6  
93.7  
14.2  
4.3  
ns  
ns  
d(on)  
t
r
V
GS  
I
= 4.5 V, V = 20 V,  
DD  
= 30 A, R = 2.5 W  
D
G
Turn−Off Delay Time  
Fall Time  
t
t
t
d(off)  
t
f
Turn−On Delay Time  
Rise Time  
8.0  
d(on)  
t
r
49  
V
GS  
I
= 10 V, V = 20 V,  
DD  
= 30 A, R = 2.5 W  
D
G
Turn−Off Delay Time  
Fall Time  
19.8  
2.6  
d(off)  
t
f
DRAIN−SOURCE DIODE CHARACTERISTICS  
Forward Diode Voltage  
V
T = 25°C  
0.86  
0.69  
18.8  
11.8  
7.0  
1.2  
V
SD  
J
V
S
= 0 V,  
GS  
I
= 10 A  
T = 150°C  
J
Reverse Recovery Time  
Charge Time  
t
ns  
RR  
ta  
V
GS  
= 0 V, dIs/dt = 100 A/ms,  
I
S
= 30 A  
Discharge Time  
tb  
Reverse Recovery Charge  
Q
10.9  
nC  
RR  
2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.  
3. Switching characteristics are independent of operating junction temperatures.  
http://onsemi.com  
2
 
NTD5806N  
TYPICAL CHARACTERISTICS  
70  
60  
50  
40  
30  
20  
70  
T = 25°C  
10 V  
J
V
≥ 10 V  
DS  
60  
50  
40  
30  
20  
4.5 V  
= 7, 6, 5.8, 5.5, 5.2, 5 V  
V
GS  
4.0 V  
T = 100°C  
J
3.5 V  
T = 25°C  
J
10  
0
10  
0
T = −55°C  
J
0
0.5  
1
1.5  
2
2.5  
3
2
3
4
5
6
V
DS  
, DRAIN−TO−SOURCE VOLTAGE (V)  
V
GS  
, GATE−TO−SOURCE VOLTAGE (V)  
Figure 1. On−Region Characteristics  
Figure 2. Transfer Characteristics  
0.021  
0.019  
0.017  
0.015  
0.013  
0.05  
0.04  
T = 25°C  
I
= 15 A  
J
D
T = 25°C  
J
0.03  
0.02  
0.01  
0
V
= 4.5 V  
GS  
V
GS  
= 10 V  
0.011  
4
5
6
7
8
9
10  
10  
20  
30  
40  
50  
60  
70  
V
GS  
, GATE−TO−SOURCE VOLTAGE (V)  
I , DRAIN CURRENT (A)  
D
Figure 3. On−Resistance vs. Drain Current  
Figure 4. On−Resistance vs. Drain Current and  
Gate Voltage  
10,000  
1000  
100  
2.0  
1.9  
1.8  
1.7  
1.6  
1.5  
1.4  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
V
GS  
= 0 V  
I
V
= 30 A  
D
= 10 V  
GS  
T = 150°C  
J
T = 100°C  
J
10  
−50 −25  
0
25  
50  
75  
100 125 150 175  
2
12  
22  
32  
42  
T , JUNCTION TEMPERATURE (°C)  
J
V
, DRAIN−TO−SOURCE VOLTAGE (V)  
DS  
Figure 5. On−Resistance Variation with  
Figure 6. Drain−to−Source Leakage Current  
Temperature  
vs. Voltage  
http://onsemi.com  
3
NTD5806N  
TYPICAL CHARACTERISTICS  
2000  
1500  
1000  
15  
30  
20  
V
= 0 V  
GS  
T = 25°C  
J
QT  
10  
V
DS  
C
iss  
V
GS  
5
0
10  
0
Q
Q
5
gs  
gd  
500  
0
C
oss  
I
= 30 A  
D
T = 25°C  
C
J
rss  
10  
Vgs  
5
0
5
10  
Vds  
15 20 25 30 35 40  
0
10  
15  
20  
Q , TOTAL GATE CHARGE (nC)  
g
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V)  
Figure 8. Gate−to−Source and  
Drain−to−Source Voltage vs. Total Charge  
Figure 7. Capacitance Variation  
1000  
100  
10  
15  
10  
5
V
= 0 V  
GS  
V
= 32 V  
= 30 A  
= 10 V  
DD  
T = 25°C  
J
I
D
V
GS  
t
f
t
d(off)  
t
r
t
d(on)  
1
0
1
10  
R , GATE RESISTANCE (W)  
100  
0.4  
0.5  
0.6  
, SOURCE−TO−DRAIN VOLTAGE (V)  
SD  
0.7  
0.8  
0.9  
1.0  
V
G
Figure 9. Resistive Switching Time Variation  
vs. Gate Resistance  
Figure 10. Diode Forward Voltage vs. Current  
100  
10  
50% Duty Cycle  
20%  
10%  
5%  
2%  
1
1%  
0.1  
0.01  
Single Pulse  
0.000001 0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
100  
1000  
PULSE TIME (sec)  
Figure 11. Transient Thermal Resistance − DPAK Version  
http://onsemi.com  
4
NTD5806N  
ORDERING INFORMATION  
Order Number  
†
Package  
Shipping  
NTD5806NG  
IPAK (Straight Lead DPAK)  
75 Units / Rail  
(Pb−Free)  
NTD5806NT4G  
DPAK  
(Pb−Free)  
2500 / Tape & Reel  
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging  
Specifications Brochure, BRD8011/D.  
http://onsemi.com  
5
NTD5806N  
PACKAGE DIMENSIONS  
DPAK  
CASE 369C−01  
ISSUE O  
NOTES:  
1. DIMENSIONING AND TOLERANCING  
PER ANSI Y14.5M, 1982.  
2. CONTROLLING DIMENSION: INCH.  
SEATING  
PLANE  
−T−  
C
B
R
INCHES  
DIM MIN MAX  
MILLIMETERS  
E
V
MIN  
5.97  
6.35  
2.19  
0.69  
0.46  
0.94  
MAX  
6.22  
6.73  
2.38  
0.88  
0.58  
1.14  
A
B
C
D
E
F
G
H
J
0.235 0.245  
0.250 0.265  
0.086 0.094  
0.027 0.035  
0.018 0.023  
0.037 0.045  
0.180 BSC  
0.034 0.040  
0.018 0.023  
0.102 0.114  
0.090 BSC  
4
2
Z
A
K
S
1
3
4.58 BSC  
U
0.87  
0.46  
2.60  
1.01  
0.58  
2.89  
K
L
2.29 BSC  
F
J
R
S
U
V
Z
0.180 0.215  
0.025 0.040  
4.57  
0.63  
0.51  
0.89  
3.93  
5.45  
1.01  
−−−  
1.27  
−−−  
L
H
0.020  
0.035 0.050  
0.155 −−−  
−−−  
D 2 PL  
M
G
0.13 (0.005)  
T
STYLE 2:  
PIN 1. GATE  
2. DRAIN  
SOLDERING FOOTPRINT*  
3. SOURCE  
4. DRAIN  
6.20  
3.0  
0.244  
0.118  
2.58  
0.101  
5.80  
0.228  
1.6  
0.063  
6.172  
0.243  
mm  
inches  
ǒ
Ǔ
SCALE 3:1  
*For additional information on our Pb−Free strategy and soldering  
details, please download the ON Semiconductor Soldering and  
Mounting Techniques Reference Manual, SOLDERRM/D.  
http://onsemi.com  
6
NTD5806N  
PACKAGE DIMENSIONS  
IPAK (STRAIGHT LEAD DPAK)  
CASE 369D−01  
ISSUE B  
C
B
R
NOTES:  
1. DIMENSIONING AND TOLERANCING PER  
ANSI Y14.5M, 1982.  
V
S
E
2. CONTROLLING DIMENSION: INCH.  
INCHES  
DIM MIN MAX  
MILLIMETERS  
4
2
MIN  
5.97  
6.35  
2.19  
0.69  
0.46  
0.94  
MAX  
6.35  
6.73  
2.38  
0.88  
0.58  
1.14  
Z
A
B
C
D
E
F
G
H
J
K
R
S
V
Z
0.235 0.245  
0.250 0.265  
0.086 0.094  
0.027 0.035  
0.018 0.023  
0.037 0.045  
0.090 BSC  
0.034 0.040  
0.018 0.023  
0.350 0.380  
0.180 0.215  
0.025 0.040  
0.035 0.050  
A
K
1
3
−T−  
SEATING  
PLANE  
2.29 BSC  
0.87  
0.46  
8.89  
4.45  
0.63  
0.89  
3.93  
1.01  
0.58  
9.65  
5.45  
1.01  
1.27  
−−−  
J
F
H
0.155  
−−−  
D 3 PL  
STYLE 2:  
PIN 1. GATE  
2. DRAIN  
G
M
T
0.13 (0.005)  
3. SOURCE  
4. DRAIN  
ON Semiconductor and  
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice  
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability  
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.  
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All  
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights  
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications  
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should  
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,  
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death  
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal  
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.  
PUBLICATION ORDERING INFORMATION  
LITERATURE FULFILLMENT:  
N. American Technical Support: 800−282−9855 Toll Free  
USA/Canada  
Europe, Middle East and Africa Technical Support:  
Phone: 421 33 790 2910  
Japan Customer Focus Center  
Phone: 81−3−5773−3850  
ON Semiconductor Website: www.onsemi.com  
Order Literature: http://www.onsemi.com/orderlit  
Literature Distribution Center for ON Semiconductor  
P.O. Box 5163, Denver, Colorado 80217 USA  
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada  
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada  
Email: orderlit@onsemi.com  
For additional information, please contact your local  
Sales Representative  
NTD5806N/D  

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