NTD5807N [ONSEMI]
Power MOSFET 40 V, 23 A, Single N−Channel, DPAK/IPAK; 功率MOSFET的40 V ， 23 A单N沟道， DPAK / IPAK
| 型号： | NTD5807N |
| 厂家： | 
ONSEMI |
| 描述： | Power MOSFET 40 V, 23 A, Single N−Channel, DPAK/IPAK |
| 文件： | 总6页 (文件大小：129K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NTD5807N
Power MOSFET
40 V, 23 A, Single N−Channel, DPAK/IPAK
Features
• Low R
DS(on)
• High Current Capability
• Avalanche Energy Specified
• These are Pb−Free Devices
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V
R
MAX
I MAX
D
(BR)DSS
DS(on)
Applications
37 mW @ 4.5 V
31 mW @ 10 V
16 A
23 A
40 V
• CCFL Backlight
• DC Motor Control
• Class D Amplifier
D
• Power Supply Secondary Side Synchronous Rectification
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Parameter
Drain−to−Source Voltage
Symbol
Value
40
Unit
V
G
V
DSS
Gate−to−Source Voltage − Continuous
Gate−to−Source Voltage
V
"20
"30
V
GS
S
N−CHANNEL MOSFET
V
GS
V
− Non−Repetitive (t < 10 mS)
p
4
Continuous Drain
T
= 25°C
= 100°C
= 25°C
I
23
16
33
A
C
D
4
Current (R
(Note 1)
)
q
JC
Steady
State
T
C
2
1
Power Dissipation
(R ) (Note 1)
T
C
P
W
D
3
1
q
JC
2
3
DPAK
Pulsed Drain Current
t = 10 ms
I
45
A
p
DM
IPAK
CASE 369AA
(Surface Mount)
STYLE 2
CASE 369D
(Straight Lead
DPAK)
Operating Junction and Storage Temperature
T , T
−55 to
175
°C
J
stg
Source Current (Body Diode)
I
23
A
S
Single Pulse Drain−to−Source Avalanche
E
29.4
mJ
AS
MARKING DIAGRAMS
& PIN ASSIGNMENT
Energy (V = 50 V, V = 10 V, R = 25 W,
DD
GS
G
I
= 14 A, L = 0.3 mH, V = 40 V)
L(pk)
DS
4
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
260
°C
Drain
L
4
Drain
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL RESISTANCE MAXIMUM RATINGS
2
Drain
1
3
Parameter
Symbol
Value
Unit
Gate Source
1
2
3
Junction−to−Case (Drain)
R
4.5
°C/W
q
JC
Gate Drain Source
Junction−to−Ambient − Steady State (Note 1)
R
107
q
JA
Y
WW
= Year
= Work Week
1. Surface−mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces.
5807N = Device Code
G
= Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
© Semiconductor Components Industries, LLC, 2010
1
Publication Order Number:
February, 2010 − Rev. 2
NTD5807N/D
NTD5807N
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
V
GS
= 0 V, I = 250 mA
40
V
(BR)DSS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/T
J
38
mV/°C
(BR)DSS
Zero Gate Voltage Drain Current
I
T = 25°C
1.0
100
100
mA
DSS
J
V
= 0 V,
GS
DS
V
= 40 V
T = 150°C
J
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
I
V
= 0 V, V
=
20 V
nA
GSS
DS
GS
GS
V
V
= V , I = 250 mA
1.4
2.5
V
GS(TH)
DS
D
Negative Threshold Temperature
Coefficient
V
/T
−5.8
mV/°C
GS(TH)
J
Drain−to−Source On Resistance
R
V
= 10 V, I = 5.0 A
20
29
31
37
mW
S
DS(on)
GS
D
V
GS
= 4.5 V, I = 4.0 A
D
Forward Transconductance
gFS
V
= 10 V, I = 15 A
8.1
DS
D
CHARGES, CAPACITANCES AND GATE RESISTANCES
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
C
603
96
pF
iss
V
= 0 V, f = 1.0 MHz,
DS
GS
C
oss
V
= 25 V
C
73
rss
Q
12.6
0.76
2.2
3.1
20
nC
G(TOT)
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
SWITCHING CHARACTERISTICS (Note 3)
Turn−On Delay Time
Rise Time
Q
G(TH)
V
GS
= 10 V, V = 20 V,
DS
I
D
= 5.0 A
Q
GS
GD
Q
t
11.2
111
11.2
3.2
ns
ns
d(on)
t
r
V
GS
I
= 4.5 V, V = 20 V,
DD
= 30 A, R = 2.5 W
D
G
Turn−Off Delay Time
Fall Time
t
t
t
d(off)
t
f
Turn−On Delay Time
Rise Time
6.7
d(on)
t
20.4
15.6
2.0
r
V
GS
I
= 10 V, V = 20 V,
DD
= 30 A, R = 2.5 W
D
G
Turn−Off Delay Time
Fall Time
d(off)
t
f
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
T = 25°C
0.91
0.76
15.7
10.75
5.0
1.2
V
SD
J
V
S
= 0 V,
GS
I
= 10 A
T = 150°C
J
Reverse Recovery Time
Charge Time
t
ns
RR
ta
V
GS
= 0 V, dIs/dt = 100 A/ms,
I
S
= 30 A
Discharge Time
tb
Reverse Recovery Charge
Q
6.1
nC
RR
2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperatures.
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2
NTD5807N
TYPICAL CHARACTERISTICS
45
40
35
30
25
20
15
10
50
T = 25°C
10 V
V
= 5 V
J
GS
V
DS
≥ 10 V
4.5 V
40
30
20
4.2 V
4.0 V
3.8 V
T = 25°C
J
3.4 V
3.0 V
T = 150°C
J
10
0
5
0
T = −55°C
J
0
1
2
3
4
5
6
2
3
4
5
6
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
0.025
0.023
0.021
0.040
0.038
0.036
T = 25°C
J
V
GS
= 10 V
0.034
0.032
0.030
0.028
0.026
0.024
V
= 4.5 V
GS
T = 25°C
J
0.019
V
= 10 V
GS
0.022
0.020
0.018
0.016
0.017
0.015
5
10
15
20
25
5
10
15
20
25
30
35
40
45
I , DRAIN CURRENT (A)
D
I , DRAIN CURRENT (A)
D
Figure 3. On−Resistance vs. Drain Current
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
1.8
1.7
1.6
10,000,000
1,000,000
V
GS
= 0 V
I
= 5 A
T = 150°C
J
D
V
= 10 V
GS
1.5
1.4
1.3
1.2
1.1
1.0
0.9
100,000
10,000
T = 25°C
J
1000
100
0.8
0.7
−50 −25
0
25
50
75
100 125 150 175
2
12
, DRAIN−TO−SOURCE VOLTAGE (V)
DS
22
32
42
T , JUNCTION TEMPERATURE (°C)
J
V
Figure 5. On−Resistance Variation with
Figure 6. Drain−to−Source Leakage Current
Temperature
vs. Voltage
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3
NTD5807N
TYPICAL CHARACTERISTICS
1500
1250
1000
750
24
18
12
12
QT
V
= 0 V
GS
9
6
T = 25°C
J
V
DS
V
GS
C
iss
Q
gd
500
Q
I = 5 A
D
gs
C
5
rss
3
0
6
0
C
oss
T = 25°C
J
250
0
10
Vgs
0
5
10
Vds
15 20 25 30 35 40
0
2
4
6
8
10
12
14
Q , TOTAL GATE CHARGE (nC)
g
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V)
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
Figure 7. Capacitance Variation
100
20
t
t
t
d(on)
d(off)
V
GS
= 0 V
V
I
= 32 V
= 30 A
DD
T = 25°C
J
r
D
V
GS
= 10 V
15
10
t
f
10
5
0
1
1
10
R , GATE RESISTANCE (W)
100
0.4
0.6
0.8
1.0
1.2
1.4
V
, SOURCE−TO−DRAIN VOLTAGE (V)
G
SD
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
ORDERING INFORMATION
Order Number
†
Package
Shipping
NTD5807NG
IPAK (Straight Lead DPAK)
75 Units / Rail
(Pb−Free)
NTD5807NT4G
DPAK
(Pb−Free)
2500 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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4
NTD5807N
PACKAGE DIMENSIONS
DPAK (SINGLE GUAGE)
CASE 369AA−01
ISSUE A
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
SEATING
PLANE
−T−
2. CONTROLLING DIMENSION: INCH.
C
B
R
INCHES
DIM MIN MAX
MILLIMETERS
E
V
MIN
5.97
6.35
2.19
0.63
0.46
0.77
MAX
6.22
6.73
2.38
0.89
0.61
1.14
A
B
C
D
E
F
0.235 0.245
0.250 0.265
0.086 0.094
0.025 0.035
0.018 0.024
0.030 0.045
0.386 0.410
0.018 0.023
0.090 BSC
4
2
Z
A
H
S
1
3
H
J
L
9.80 10.40
U
0.46
0.58
2.29 BSC
R
S
U
V
Z
0.180 0.215
0.024 0.040
4.57
0.60
0.51
0.89
3.93
5.45
1.01
−−−
1.27
−−−
F
J
0.020
0.035 0.050
0.155 −−−
−−−
L
D 2 PL
STYLE 2:
PIN 1. GATE
2. DRAIN
M
0.13 (0.005)
T
3. SOURCE
4. DRAIN
SOLDERING FOOTPRINT*
6.20
3.0
0.244
0.118
2.58
0.101
5.80
1.6
0.063
6.172
0.243
0.228
mm
inches
ǒ
Ǔ
SCALE 3:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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5
NTD5807N
PACKAGE DIMENSIONS
IPAK (STRAIGHT LEAD DPAK)
CASE 369D−01
ISSUE B
C
B
R
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
V
S
E
2. CONTROLLING DIMENSION: INCH.
INCHES
DIM MIN MAX
MILLIMETERS
4
2
MIN
5.97
6.35
2.19
0.69
0.46
0.94
MAX
6.35
6.73
2.38
0.88
0.58
1.14
Z
A
B
C
D
E
F
G
H
J
K
R
S
V
Z
0.235 0.245
0.250 0.265
0.086 0.094
0.027 0.035
0.018 0.023
0.037 0.045
0.090 BSC
0.034 0.040
0.018 0.023
0.350 0.380
0.180 0.215
0.025 0.040
0.035 0.050
A
K
1
3
−T−
SEATING
PLANE
2.29 BSC
0.87
0.46
8.89
4.45
0.63
0.89
3.93
1.01
0.58
9.65
5.45
1.01
1.27
−−−
J
F
H
0.155
−−−
D 3 PL
STYLE 2:
PIN 1. GATE
2. DRAIN
G
M
T
0.13 (0.005)
3. SOURCE
4. DRAIN
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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For additional information, please contact your local
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NTD5807N/D
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