NTD5865 [ONSEMI]
N-Channel Power MOSFET;
| 型号： | NTD5865 |
| 厂家： | 
ONSEMI |
| 描述： | N-Channel Power MOSFET |
| 文件： | 总7页 (文件大小：108K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NTD5865NL
N-Channel Power MOSFET
60 V, 46 A, 16 mW
Features
• Low Gate Charge
• Fast Switching
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• High Current Capability
• 100% Avalanche Tested
V
R
MAX
I MAX
D
(BR)DSS
DS(on)
• These Devices are Pb−Free, Halogen Free and are RoHS Compliant
16 mW @ 10 V
19 mW @ 4.5 V
60 V
46 A
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Parameter
Drain−to−Source Voltage
Symbol
Value
60
Unit
V
D
V
DSS
Gate−to−Source Voltage − Continuous
V
20
V
GS
GS
N−Channel
Gate−to−Source Voltage
V
30
V
− Non−Repetitive (t < 10 ms)
G
p
Continuous Drain
Current (R
T
= 25°C
= 100°C
= 25°C
I
46
33
71
A
C
D
)
q
JC
S
Steady
State
T
C
4
Power Dissipation
(R
T
C
P
W
D
)
q
JC
4
Pulsed Drain Current
t = 10 ms
p
I
203
A
DM
Operating Junction and Storage Temperature
T , T
−55 to
175
°C
J
stg
1
2
1
2
3
3
Source Current (Body Diode)
I
46
36
A
mJ
A
S
DPAK
IPAK
Single Pulse Drain−to−Source
Avalanche Energy
(L =
0.1 mH)
E
CASE 369AA
(Surface Mount)
STYLE 2
CASE 369D
(Straight Lead)
STYLE 2
AS
AS
I
27
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
260
°C
L
MARKING DIAGRAMS
& PIN ASSIGNMENT
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
4
Drain
4
THERMAL RESISTANCE MAXIMUM RATINGS
Drain
Parameter
Symbol
Value
Unit
Junction−to−Case (Drain)
R
2.1
49
°C/W
q
q
JC
Junction−to−Ambient − Steady State (Note 1)
R
JA
2
1. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.
2
Drain
1
3
1
2
3
Gate Source
Gate Drain Source
A
Y
WW
= Assembly Location*
= Year
= Work Week
5865NL = Device Code
= Pb−Free Package
G
* The Assembly Location code (A) is front side
optional. In cases where the Assembly Location is
stamped in the package, the front side assembly
code may be blank.
ORDERING INFORMATION
See detailed ordering and shipping information on page 5 of
this data sheet.
© Semiconductor Components Industries, LLC, 2014
1
Publication Order Number:
September, 2014 − Rev. 4
NTD5865NL/D
NTD5865NL
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
V
GS
= 0 V, I = 250 mA
60
V
(BR)DSS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/T
J
55
mV/°C
(BR)DSS
Zero Gate Voltage Drain Current
I
T = 25°C
1.0
100
100
mA
DSS
J
V
V
= 0 V,
= 60 V
GS
DS
T = 150°C
J
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
I
V
= 0 V, V =
GS
20 V
nA
GSS
DS
V
V
= V , I = 250 mA
1.0
2.0
V
GS(TH)
GS
DS
D
Negative Threshold Temperature Co-
efficient
V
/T
5.6
mV/°C
GS(TH)
J
Drain−to−Source on Resistance
Drain−to−Source on Resistance
Forward Transconductance
R
R
V
= 10 V, I = 20 A
13
16
15
16
19
mW
mW
S
DS(on)
GS
D
V
GS
= 4.5 V, I = 20 A
D
DS(on)
gFS
V
= 15 V, I = 20 A
DS D
CHARGES, CAPACITANCES AND GATE RESISTANCES
Input Capacitance
C
1400
137
95
29
1.1
4
pF
nC
iss
V
= 0 V, f = 1.0 MHz,
GS
Output Capacitance
C
oss
V
DS
= 25 V
Reverse Transfer Capacitance
Total Gate Charge
C
rss
Q
Q
G(TOT)
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Total Gate Charge
Q
G(TH)
V
GS
= 10 V, V = 48 V,
DS
I
D
= 40 A
Q
GS
GD
Q
8
V
GS
= 4.5 V, V = 48 V,
15
nC
G(TOT)
DS
I
D
= 40 A
Gate Resistance
R
1.3
W
G
SWITCHING CHARACTERISTICS (Note 3)
Turn−On Delay Time
Rise Time
t
8.4
12.4
26
ns
d(on)
t
r
V
I
= 10 V, V = 48 V,
DD
GS
= 40 A, R = 2.5 W
D
G
Turn−Off Delay Time
Fall Time
t
d(off)
t
f
4.4
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
T = 25°C
0.95
0.85
20
1.2
V
SD
J
V
= 0 V,
= 40 A
GS
I
S
T = 125°C
J
Reverse Recovery Time
Charge Time
t
ns
RR
ta
13
V
GS
= 0 V, dIs/dt = 100 A/ms,
I
S
= 40 A
Discharge Time
tb
7
Reverse Recovery Charge
Q
13
nC
RR
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperatures.
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2
NTD5865NL
TYPICAL CHARACTERISTICS
80
70
60
50
40
30
20
10
0
80
4 V
V
= 10 V
V
DS
≥ 10 V
GS
3.8 V
70
60
50
40
30
20
10
0
T = 25°C
J
4.5 V
3.6 V
3.4 V
3.2 V
T = 25°C
J
3 V
2.8 V
T = 125°C
J
T = −55°C
J
2.6 V
3
0
1
2
4
5
1
2
3
4
5
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
0.030
0.025
0.020
0.015
0.010
0.018
0.016
0.014
0.012
0.010
T = 25°C
J
I
= 40 A
D
T = 25°C
V
= 4.5 V
= 10 V
J
GS
V
GS
2
3
4
5
6
7
8
9
10
5
10
15
20
25
30
35
40
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 3. On−Resistance vs. Gate Voltage
Figure 4. On−Resistance vs. Drain Current
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
10000
1000
100
I
= 38 A
= 10 V
D
V
GS
= 0 V
V
GS
T = 150°C
J
T = 125°C
J
−50 −25
0
25
50
75
100 125 150 175
10
20
30
40
50
60
T , JUNCTION TEMPERATURE (°C)
J
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
NTD5865NL
TYPICAL CHARACTERISTICS
10
1800
1600
1400
1200
1000
800
600
400
200
0
Q
V
= 0 V
T
GS
T = 25°C
J
8
6
4
2
0
C
iss
Q
gs
Q
gd
V
DS
= 48 V
I
D
= 40 A
C
oss
T = 25°C
J
C
rss
0
10
20
30
40
50
60
0
5
10
15
20
25
30
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Q , TOTAL GATE CHARGE (nC)
g
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source vs. Total Charge
1000
100
10
40
35
30
25
20
15
10
5
V
= 0 V
GS
V
I
= 48 V
= 40 A
= 10 V
DD
T = 25°C
J
D
V
GS
t
d(off)
t
r
t
d(on)
t
f
1
0
1
10
R , GATE RESISTANCE (W)
100
0.50 0.55 0.60 0.65 0.70 0.75 0.80 0.85 0.90 0.95 1.00
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
G
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
1000
V
GS
= 10 V
SINGLE PULSE
= 25°C
T
C
100 ms
100
10
1
10 ms
1 ms
10 ms
dc
R
LIMIT
DS(on)
THERMAL LIMIT
PACKAGE LIMIT
0.1
0.1
1
10
100
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
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4
NTD5865NL
TYPICAL CHARACTERISTICS
10
1
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
0.1
0.01
0.01
SINGLE PULSE
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
t, PULSE TIME (s)
Figure 12. Thermal Response
ORDERING INFORMATION
Order Number
†
Package
Shipping
NTD5865NL−1G
IPAK (Straight Lead)
(Pb−Free)
75 Units / Rail
NTD5865NLT4G
DPAK
(Pb−Free)
2500 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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5
NTD5865NL
PACKAGE DIMENSIONS
DPAK (SINGLE GUAGE)
CASE 369AA
ISSUE B
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. THERMAL PAD CONTOUR OPTIONAL WITHIN DI-
MENSIONS b3, L3 and Z.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
NOT EXCEED 0.006 INCHES PER SIDE.
5. DIMENSIONS D AND E ARE DETERMINED AT THE
OUTERMOST EXTREMES OF THE PLASTIC BODY.
6. DATUMS A AND B ARE DETERMINED AT DATUM
PLANE H.
C
A
D
A
E
c2
b3
B
4
2
L3
L4
Z
H
DETAIL A
1
3
INCHES
DIM MIN MAX
0.086 0.094
A1 0.000 0.005
0.025 0.035
MILLIMETERS
MIN
2.18
0.00
0.63
0.76
4.57
0.46
0.46
5.97
6.35
MAX
2.38
0.13
0.89
1.14
5.46
0.61
0.61
6.22
6.73
A
b2
c
b
b
b2 0.030 0.045
b3 0.180 0.215
M
0.005 (0.13)
C
H
e
c
0.018 0.024
c2 0.018 0.024
GAUGE
SEATING
PLANE
L2
PLANE
C
D
E
e
0.235 0.245
0.250 0.265
0.090 BSC
2.29 BSC
9.40 10.41
1.40 1.78
2.74 REF
0.51 BSC
0.89 1.27
H
L
L1
L2
0.370 0.410
0.055 0.070
0.108 REF
L
A1
L1
0.020 BSC
DETAIL A
ROTATED 905 CW
L3 0.035 0.050
L4
Z
−−− 0.040
0.155 −−−
−−−
3.93
1.01
−−−
STYLE 2:
PIN 1. GATE
2. DRAIN
SOLDERING FOOTPRINT*
6.20
0.244
3.00
0.118
3. SOURCE
4. DRAIN
2.58
0.102
5.80
0.228
1.60
0.063
6.17
0.243
mm
inches
ǒ
Ǔ
SCALE 3:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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6
NTD5865NL
PACKAGE DIMENSIONS
IPAK
CASE 369D
ISSUE C
C
B
R
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
V
S
E
INCHES
DIM MIN MAX
MILLIMETERS
4
2
MIN
5.97
6.35
2.19
0.69
0.46
0.94
MAX
6.35
6.73
2.38
0.88
0.58
1.14
Z
A
B
C
D
E
F
G
H
J
K
R
S
V
Z
0.235 0.245
0.250 0.265
0.086 0.094
0.027 0.035
0.018 0.023
0.037 0.045
0.090 BSC
0.034 0.040
0.018 0.023
0.350 0.380
0.180 0.215
0.025 0.040
0.035 0.050
A
K
1
3
−T−
SEATING
PLANE
2.29 BSC
0.87
0.46
8.89
4.45
0.63
0.89
3.93
1.01
0.58
9.65
5.45
1.01
1.27
−−−
J
F
H
0.155
−−−
D 3 PL
STYLE 2:
PIN 1. GATE
G
M
T
0.13 (0.005)
2. DRAIN
3. SOURCE
4. DRAIN
ON Semiconductor and the
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USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
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Phone: 81−3−5817−1050
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NTD5865NL/D
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