NTD5C632NLT4G [ONSEMI]
单 N 沟道，逻辑电平，功率 MOSFET，60V，155A，2.5mΩ;
| 型号： | NTD5C632NLT4G |
| 厂家： | 
ONSEMI |
| 描述： | 单 N 沟道，逻辑电平，功率 MOSFET，60V，155A，2.5mΩ |
| 文件： | 总7页 (文件大小：233K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NTD5C632NL
MOSFET – Single,
N-Channel
60 V, 2.5 mW, 155 A
Features
• Low R
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to Minimize Conduction Losses
DS(on)
• Low Q and Capacitance to Minimize Driver Losses
G
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
V
R
I
D
(BR)DSS
DS(on)
Compliant
2.5 mW @ 10 V
3.4 mW @ 4.5 V
60 V
155 A
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Parameter
Drain−to−Source Voltage
Symbol
Value
60
Unit
V
D
V
DSS
Gate−to−Source Voltage
V
"20
155
110
115
58
V
GS
Continuous Drain Cur-
T
= 25°C
= 100°C
= 25°C
I
A
C
D
rent R
(Notes 1 & 3)
q
JC
T
C
G
Steady
State
Power Dissipation R
(Note 1)
T
C
P
W
A
q
D
JC
JA
T
C
= 100°C
S
N−CHANNEL MOSFET
Continuous Drain
Current R
T = 25°C
A
I
29
D
q
JA
T = 100°C
A
21
(Notes 1, 2 & 3)
4
Steady
State
Power Dissipation R
(Notes 1 & 2)
T = 25°C
A
P
4
W
q
D
2
1
T = 100°C
A
2
3
Pulsed Drain Current
T = 25°C, t = 10 ms
I
DM
900
A
A
p
DPAK
CASE 369C
STYLE 2
Operating Junction and Storage Temperature
T , T
−55 to
175
°C
J
stg
Source Current (Body Diode)
I
S
96
A
Single Pulse Drain−to−Source Avalanche
E
363
mJ
AS
MARKING DIAGRAM
& PIN ASSIGNMENT
Energy (I
= 14.4 A)
L(pk)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
260
°C
L
4
Drain
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS
2
Parameter
Symbol
Value
1.3
Unit
Drain
1
3
Gate Source
Junction−to−Case (Drain) (Note 1)
Junction−to−Ambient − Steady State (Note 2)
R
°C/W
q
JC
A
Y
WW
= Assembly Location
= Year
= Work Week
R
37
q
JA
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
5C632L = Device Code
2
2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.
G
= Pb−Free Package
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2016
1
Publication Order Number:
May, 2019 − Rev. 1
NTD5C632NL/D
NTD5C632NL
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Parameter
OFF CHARACTERISTICS
Symbol
Test Condition
Min
Typ
Max
Unit
Drain−to−Source Breakdown Voltage
V
V
GS
= 0 V, I = 250 mA
60
V
(BR)DSS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/T
J
24
mV/°C
(BR)DSS
Zero Gate Voltage Drain Current
I
T = 25°C
10
mA
DSS
J
V
= 0 V,
GS
DS
V
= 60 V
T = 125°C
J
250
100
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
I
V
= 0 V, V = 20 V
nA
GSS
DS
GS
V
V
= V , I = 250 mA
1.2
2.1
V
GS(TH)
GS
DS
D
Negative Threshold Temperature Coefficient
Drain−to−Source On Resistance
V
/T
5.8
2.1
2.7
185
mV/°C
mW
GS(TH)
J
R
V
= 10 V, I = 50 A
2.5
3.4
DS(on)
GS
D
V
GS
= 4.5 V, I = 50 A
D
Forward Transconductance
g
FS
V
= 3 V, I = 50 A
S
DS
D
CHARGES, CAPACITANCES AND GATE RESISTANCES
Input Capacitance
C
5700
2800
36
pF
iss
V
= 0 V, f = 1.0 MHz,
DS
GS
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
C
oss
V
= 25 V
C
rss
Q
Q
V
= 4.5 V
= 10 V
34
nC
nC
G(TOT)
G(TOT)
GS
V
= 30 V,
= 50 A
DS
I
D
V
78
GS
Total Gate Charge
34.0
9.5
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Plateau Voltage
Q
G(TH)
V
GS
= 4.5 V, V = 30 V,
DS
Q
16.8
6.1
GS
GD
GP
I
D
= 50 A
Q
V
3.1
V
Gate Resistance
R
0.7
W
G
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time
t
20
126
65
ns
d(on)
Rise Time
t
r
V
= 4.5 V, V = 30 V,
DS
GS
D
I
= 50 A, R = 2.5 W
G
Turn−Off Delay Time
t
d(off)
Fall Time
t
f
121
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
T = 25°C
0.8
0.7
71
1.2
V
SD
J
V
S
= 0 V,
GS
I
= 50 A
T = 125°C
J
Reverse Recovery Time
Charge Time
t
ns
RR
ta
36
V
= 0 V, dI /dt = 100 A/ms,
S
GS
I
S
= 50 A
Discharge Time
tb
36
Reverse Recovery Charge
Q
110
nC
RR
4. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
5. Switching characteristics are independent of operating junction temperatures.
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2
NTD5C632NL
TYPICAL CHARACTERISTICS
280
240
200
160
120
80
280
10 V to
4.5 V
V
GS
= 3.6 V
V
DS
= 3 V
3.4 V
3.2 V
240
200
160
120
80
3.0 V
T = 25°C
J
2.8 V
2.6 V
40
0
40
0
2.4 V
2.2 V
T = 125°C
J
T = −55°C
J
0
0.5
1.0
1.5
2.0
2.5
0
1
2
3
4
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
8
7
6
5
4
3
2
1
3.5
3.0
T = 25°C
D
J
T = 25°C
J
I
= 50 A
V
V
= 4.5 V
= 10 V
GS
2.5
GS
2.0
1.5
0
1
2
3
4
5
6
7
8
9
10
10 20
30
40
50
60
70
80
90 100
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 3. On−Resistance vs. Gate−to−Source
Figure 4. On−Resistance vs. Drain Current and
Voltage
Gate Voltage
2.0
100K
10K
V
I
= 10 V
= 50 A
GS
T = 150°C
J
1.8
1.6
1.4
1.2
1.0
D
T = 125°C
J
1K
T = 85°C
J
0.8
0.6
100
−50 −25
0
25
50
75 100 125 150 175
5
15
25
35
45
55
T , JUNCTION TEMPERATURE (°C)
J
V
, DRAIN−TO−SOURCE VOLTAGE (V)
DS
Figure 5. On−Resistance Variation with
Figure 6. Drain−to−Source Leakage Current
Temperature
vs. Voltage
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3
NTD5C632NL
TYPICAL CHARACTERISTICS
10K
1K
10
Q
T
C
9
8
7
6
5
4
3
2
ISS
C
OSS
100
Q
GD
Q
GS
C
RSS
10
1
V
= 0 V
GS
V
DS
= 30 V
T = 25°C
J
T = 25°C
J
1
0
f = 1 MHz
10
I
D
= 50 A
0
20
30
40
50
60
0
10
20
30
40
50
60
70
80
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Q , TOTAL GATE CHARGE (nC)
G
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source Voltage vs. Total
Charge
100
1000
100
10
V
GS
= 0 V
t
d(off)
t
t
f
r
10
t
d(on)
V
V
= 4.5 V
= 30 V
GS
DS
I
D
= 50 A
T = 125°C
J
T = −55°C
J
T = 25°C
J
1
1
10
R , GATE RESISTANCE (W)
100
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
G
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
100
1000
100
V
≤ 10 V
T
= 25°C
GS
J(initial)
10
10
10 ms
Single Pulse
T = 100°C
J(initial)
T
C
= 25°C
0.5 ms
1 ms
10 ms
1
R
Limit
DS(on)
Thermal Limit
Package Limit
0.1
1
0.1
1
10
100
1000
1E−04
1E−03
TIME IN AVALANCHE (s)
1E−02
V
DS
, DRAIN−TO−SOURCE VOLTAGE(V)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Drain Current vs. Time in
Avalanche
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4
NTD5C632NL
TYPICAL CHARACTERISTICS
100
10
1
50% Duty Cycle
20%
10%
5%
2%
1%
0.1
0.01
Single Pulse
0.001
0.000001 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (sec)
Figure 13. Thermal Response
ORDERING INFORMATION
Order Number
†
Package
Shipping
NTD5C632NLT4G
DPAK
(Pb−Free)
2500 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
4
DPAK (SINGLE GAUGE)
CASE 369C
ISSUE G
2
1
DATE 31 MAY 2023
3
SCALE 1:1
GENERIC
MARKING DIAGRAM*
XXXXXXG
ALYWW
AYWW
XXX
XXXXXG
IC
Discrete
XXXXXX = Device Code
A
= Assembly Location
L
= Wafer Lot
STYLE 1:
STYLE 2:
PIN 1. GATE
2. DRAIN
STYLE 3:
STYLE 4:
STYLE 5:
Y
WW
G
= Year
= Work Week
= Pb−Free Package
PIN 1. BASE
PIN 1. ANODE
2. CATHODE
3. ANODE
PIN 1. CATHODE
2. ANODE
3. GATE
PIN 1. GATE
2. ANODE
3. CATHODE
4. ANODE
2. COLLECTOR
3. EMITTER
3. SOURCE
4. DRAIN
4. COLLECTOR
4. CATHODE
4. ANODE
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
STYLE 6:
PIN 1. MT1
2. MT2
STYLE 7:
PIN 1. GATE
STYLE 8:
PIN 1. N/C
STYLE 9:
PIN 1. ANODE
2. CATHODE
STYLE 10:
PIN 1. CATHODE
2. ANODE
2. COLLECTOR
2. CATHODE
3. GATE
4. MT2
3. EMITTER
4. COLLECTOR
3. ANODE
4. CATHODE
3. RESISTOR ADJUST
4. CATHODE
3. CATHODE
4. ANODE
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON10527D
DPAK (SINGLE GAUGE)
PAGE 1 OF 1
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