NTF6P02T3 [ONSEMI]
Power MOSFET -6.0 Amps, -20 Volts P-Channel SOT-223; 功率MOSFET -6.0安培，伏特-20 P沟道SOT- 223
| 型号： | NTF6P02T3 |
| 厂家： | 
ONSEMI |
| 描述： | Power MOSFET -6.0 Amps, -20 Volts P-Channel SOT-223 |
| 文件： | 总8页 (文件大小：71K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NTF6P02T3
Power MOSFET
-6.0 Amps, -20 Volts
P–Channel SOT–223
Features
http://onsemi.com
• Low R
DS(on)
• Logic Level Gate Drive
• Diode Exhibits High Speed, Soft Recovery
• Avalanche Energy Specified
–6.0 AMPERES
–20 VOLTS
RDS(on) = 44 mW (Typ.)
Typical Applications
P–Channel
• Power Management in Portables and Battery–Powered Products, i.e.:
Cellular and Cordless Telephones and PCMCIA Cards
D
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Rating
Drain–to–Source Voltage
Gate–to–Source Voltage
Drain Current (Note 1)
Symbol Value
Unit
Vdc
Vdc
G
V
DSS
–20
V
GS
±8.0
S
– Continuous @ T = 25°C
I
I
–10
–8.4
–35
Adc
A
D
D
MARKING
DIAGRAM
– Continuous @ T = 70°C
A
I
Apk
W
– Single Pulse (t = 10 µs)
DM
p
Total Power Dissipation @ T = 25°C
P
8.3
A
D
4
Operating and Storage Temperature Range
T , T
–55 to
+150
°C
SOT–223
CASE 318E
STYLE 3
J
stg
AWW
6P02
1
2
Single Pulse Drain–to–Source Avalanche
E
AS
150
mJ
°C/W
°C
3
Energy – Starting T = 25°C
J
(V = –20 Vdc, V = –5.0 Vdc,
DD
GS
I
= –10 A, L = 3.0 mH, R = 25W)
A
WW
6P02
= Assembly Location
= Work Week
= Device Code
L(pk)
G
Thermal Resistance
– Junction to Lead (Note 1)
– Junction to Ambient (Note 2)
– Junction to Ambient (Note 3)
R
R
R
15
71.4
160
θ
θ
θ
JL
JA
JA
PIN ASSIGNMENT
Maximum Lead Temperature for Soldering
T
L
260
4 Drain
Purposes, 1/8″ from case for 10 seconds
1. Steady State.
2. When surface mounted to an FR4 board using 1″ pad size,
2
(Cu. Area 1.127 in ), Steady State.
3. When surface mounted to an FR4 board using minimum recommended pad
2
size, (Cu. Area 0.412 in ), Steady State.
1
2
3
Gate Drain Source
ORDERING INFORMATION
Device
NTF6P02T3
Package
Shipping
SOT–223 4000/Tape & Reel
Semiconductor Components Industries, LLC, 2002
1
Publication Order Number:
September, 2002 – Rev. 0
NTF6P02T3/D
NTF6P02T3
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Characteristic
OFF CHARACTERISTICS
Symbol
Min
Typ
Max
Unit
Drain–to–Source Breakdown Voltage (Note 4)
V
Vdc
(BR)DSS
(V = 0 Vdc, I = –250 mAdc)
Temperature Coefficient (Positive)
–20
–
–25
–11
–
–
GS
D
mV/°C
mAdc
Zero Gate Voltage Drain Current
I
DSS
(V = –20 Vdc, V = 0 Vdc)
–
–
–
–
–1.0
–10
DS
GS
(V = –20 Vdc, V = 0 Vdc, T = 125°C)
DS
GS
J
Gate–Body Leakage Current
(V = ± 8.0 Vdc, V = 0 Vdc)
I
–
–
± 100
nAdc
Vdc
GS
DS
GSS
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage (Note 4)
V
GS(th)
(V = V , I = –250 mAdc)
Threshold Temperature Coefficient (Negative)
–0.4
–
–0.7
2.6
–1.0
–
DS
GS D
mV/°C
mW
Static Drain–to–Source On–Resistance (Note 4)
R
DS(on)
(V = –4.5 Vdc, I = –6.0 Adc)
–
–
–
44
57
57
50
70
–
GS
D
(V = –2.5 Vdc, I = –4.0 Adc)
GS
D
(V = –2.5 Vdc, I = –3.0 Adc)
GS
D
g
–
12
–
Mhos
pF
Forward Transconductance (Note 4)
(V = –10 Vdc, I = –6.0 Adc)
fs
DS
D
DYNAMIC CHARACTERISTICS
Input Capacitance
(V = –16 Vdc, V = 0 V,
C
–
–
–
–
–
–
900
350
90
1200
500
150
–
DS
GS
iss
f = 1.0 MHz)
Output Capacitance
C
oss
Transfer Capacitance
Input Capacitance
C
rss
(V = –10 Vdc, V = 0 V,
C
940
410
110
pF
DS
GS
iss
f = 1.0 MHz)
Output Capacitance
C
–
oss
Transfer Capacitance
C
–
rss
SWITCHING CHARACTERISTICS (Note 5)
Turn–On Delay Time
Rise Time
(V = –5.0 Vdc, I = –1.0 Adc,
t
d(on)
–
–
–
–
–
–
–
–
–
–
–
7.0
25
75
50
8.0
30
60
60
15
1.7
6.0
12
45
125
85
–
ns
ns
DD
D
V
GS
= –4.5 Vdc,
t
r
R
= 6.0 W)
G
Turn–Off Delay Time
Fall Time
t
t
t
d(off)
t
f
Turn–On Delay Time
Rise Time
(V = –16 Vdc, I = –6.0 Adc,
DD
D
d(on)
V
GS
= –4.5 Vdc,
t
r
–
R
= 2.5 W)
G
Turn–Off Delay Time
Fall Time
–
d(off)
t
f
–
Gate Charge
(V = –16 Vdc, I = –6.0 Adc,
Q
20
–
nC
DS
D
T
V
GS
= –4.5 Vdc) (Note 4)
Q
gs
gd
Q
–
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage
(I = –3.0 Adc, V = 0 Vdc) (Note 4)
V
–
–
–
–0.82
–0.74
–0.68
–1.2
–
–
Vdc
ns
S
GS
SD
(I = –2.1 Adc, V = 0 Vdc)
S
GS
(I = –3.0 Adc, V = 0 Vdc, T = 125°C)
S
GS
J
Reverse Recovery Time
(I = –3.0 Adc, V = 0 Vdc,
t
rr
–
–
–
–
42
17
–
–
–
–
S
GS
dI /dt = 100 A/ms) (Note 4)
S
t
a
t
25
b
Reverse Recovery Stored Charge
Q
0.036
mC
RR
4. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
5. Switching characteristics are independent of operating junction temperatures.
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2
NTF6P02T3
TYPICAL ELECTRICAL CHARACTERISTICS
12
–10 V
–7.0 V
–5.0 V
9
12
–2.2 V
T = 25°C
J
V
DS
≥ –10 V
–2.0 V
–1.8 V
10
8
–2.4 V
–3.2 V
–4.4 V
6
6
3
–1.6 V
–1.4 V
4
T = –55°C
J
2
0
T = 25°C
J
V
5
= –1.2 V
T = 100°C
J
GS
0
0
1
2
3
4
6
7
8
9
10
0
0.5
1
1.5
2
2.5
3
–V
DS,
DRAIN–TO–SOURCE VOLTAGE (VOLTS)
–V
GS,
GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics
Figure 2. Transfer Characteristics
0.08
0.2
T = 25°C
J
0.07
0.06
0.05
0.04
I
= –6.0 A
D
0.15
0.1
V
= –2.5 V
= –4.5 V
GS
T = 25°C
J
V
GS
0.05
0
0.03
0.02
0
1
2
3
4
5
6
2
4
6
8
10
12
14
–V
GS,
GATE–TO–SOURCE VOLTAGE (VOLTS)
–I DRAIN CURRENT (AMPS)
D,
Figure 3. On–Resistance versus
Gate–to–Source Voltage
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
1.6
10,000
1000
100
I
V
= –6.0 A
D
V
GS
= 0 V
T = 150°C
J
= –4.5 V
GS
1.4
1.2
1.0
0.8
0.6
T = 100°C
J
–50 –25
0
25
50
75
100 125
150
2
4
6
8
10
12
14
16
18
20
–V
DS,
DRAIN–TO–SOURCE VOLTAGE (VOLTS)
T , JUNCTION TEMPERATURE (°C)
J
Figure 6. Drain–to–Source Leakage Current
versus Voltage
Figure 5. On–Resistance Variation with
Temperature
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3
NTF6P02T3
TYPICAL ELECTRICAL CHARACTERISTICS
3000
2400
1800
1200
5
20
V
DS
= 0 V
V
GS
= 0 V
Q
T
T = 25°C
J
C
iss
–V
DS
4
3
2
16
12
8
–V
GS
C
rss
Q
gs
Q
gd
C
iss
I
= –6.0 A
D
C
oss
600
0
4
0
1
0
T = 25°C
J
C
rss
–V
GS
–V
DS
10
5
0
5
10
15
20
0
4
8
12
16
GATE–TO–SOURCE OR DRAIN–TO–SOURCE VOLTAGE
(VOLTS)
Q , TOTAL GATE CHARGE (nC)
g
Figure 7. Capacitance Variation
Figure 8. Gate–to–Source and
Drain–to–Source Voltage versus Total Charge
7
1000
100
V
= –16 V
= –3.0 A
= –4.5 V
DD
V
GS
= 0 V
I
D
6
5
4
3
2
T = 25°C
J
V
GS
t
t
d(off)
t
f
t
r
10
1
d(on)
1
0
1
10
R , GATE RESISTANCE (W)
100
0.3
0.6
0.9
1.2
–V , SOURCE–TO–DRAIN VOLTAGE (VOLTS)
G
SD
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
Figure 10. Diode Forward Voltage versus Current
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4
NTF6P02T3
TYPICAL ELECTRICAL CHARACTERISTICS
1
D = 0.5
0.2
0.1
NORMALIZED TO R
AT STEADY STATE (1″ PAD)
q
JA
0.05
0.1
0.0175 W 0.0710 W 0.2706 W 0.5779 W 0.7086 W
0.0154 F 0.0854 F 0.3074 F 1.7891 F 107.55 F
AMBIENT
0.02
CHIP
JUNCTION
0.01
SINGLE PULSE
0.01
1.0E-03
1.0E-02
1.0E-01
1.0E+00
t, TIME (s)
1.0E+01
1.0E+02
1.0E+03
Figure 11. FET Thermal Response
INFORMATION FOR USING THE SOT–223 SURFACE MOUNT PACKAGE
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the
total design. The footprint for the semiconductor packages
must be the correct size to insure proper solder connection
interface between the board and the package. With the
correct pad geometry, the packages will self align when
subjected to a solder reflow process.
0.15
3.8
0.079
2.0
0.248
6.3
0.091
2.3
0.091
2.3
0.079
2.0
inches
0.059
1.5
0.059
1.5
0.059
mm
1.5
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5
NTF6P02T3
TYPICAL SOLDER HEATING PROFILE
For any given circuit board, there will be a group of
temperature versus time. The line on the graph shows the
actual temperature that might be experienced on the surface
of a test board at or near a central solder joint. The two
profiles are based on a high density and a low density
board. The Vitronics SMD310 convection/infrared reflow
soldering system was used to generate this profile. The type
of solder used was 62/36/2 Tin Lead Silver with a melting
point between 177–189°C. When this type of furnace is
used for solder reflow work, the circuit boards and solder
joints tend to heat first. The components on the board are
then heated by conduction. The circuit board, because it has
a large surface area, absorbs the thermal energy more
efficiently, then distributes this energy to the components.
Because of this effect, the main body of a component may
be up to 30 degrees cooler than the adjacent solder joints.
control settings that will give the desired heat pattern. The
operator must set temperatures for several heating zones
and a figure for belt speed. Taken together, these control
settings make up a heating “profile” for that particular
circuit board. On machines controlled by a computer, the
computer remembers these profiles from one operating
session to the next. Figure 12 shows a typical heating
profile for use when soldering a surface mount device to a
printed circuit board. This profile will vary among
soldering systems, but it is a good starting point. Factors
that can affect the profile include the type of soldering
system in use, density and types of components on the
board, type of solder used, and the type of board or
substrate material being used. This profile shows
STEP 1
PREHEAT
ZONE 1
“RAMP”
STEP 2
VENT
“SOAK” ZONES 2 & 5
“RAMP”
STEP 3
HEATING
STEP 4
HEATING
ZONES 3 & 6
“SOAK”
STEP 5
HEATING
ZONES 4 & 7
“SPIKE”
STEP 6
VENT
STEP 7
COOLING
205° TO 219°C
PEAK AT
SOLDER
JOINT
170°C
DESIRED CURVE FOR HIGH
MASS ASSEMBLIES
200°C
150°C
100°C
5°C
160°C
150°C
SOLDER IS LIQUID FOR
40 TO 80 SECONDS
(DEPENDING ON
100°C
140°C
MASS OF ASSEMBLY)
DESIRED CURVE FOR LOW
MASS ASSEMBLIES
TIME (3 TO 7 MINUTES TOTAL)
T
MAX
Figure 12. Typical Solder Heating Profile
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6
NTF6P02T3
PACKAGE DIMENSIONS
SOT–223 (TO–261)
CASE 318E–04
ISSUE K
A
F
NOTES:
ąă1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
ąă2. CONTROLLING DIMENSION: INCH.
4
2
INCHES
DIM MIN MAX
MILLIMETERS
S
B
MIN
6.30
3.30
1.50
0.60
2.90
2.20
MAX
6.70
3.70
1.75
0.89
3.20
2.40
0.100
0.35
2.00
1.05
10
1
3
A
B
C
D
F
0.249
0.130
0.060
0.024
0.115
0.087
0.263
0.145
0.068
0.035
0.126
0.094
D
G
H
J
L
0.0008 0.0040 0.020
G
0.009
0.060
0.033
0
0.014
0.078
0.041
10
0.24
1.50
0.85
0
J
K
L
C
M
S
_
_
_
_
0.08 (0003)
0.264
0.287
6.70
7.30
M
H
K
STYLE 3:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
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7
NTF6P02T3
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make
changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
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liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be
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NTF6P02T3/D
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