NTH4L060N090SC1 [ONSEMI]
Silicon Carbide (SiC) MOSFET - EliteSiC, 60 mohm, 900 V, M2, TO-247-4L;
| 型号： | NTH4L060N090SC1 |
| 厂家： | 
ONSEMI |
| 描述： | Silicon Carbide (SiC) MOSFET - EliteSiC, 60 mohm, 900 V, M2, TO-247-4L |
| 文件： | 总7页 (文件大小：915K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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Silicon Carbide (SiC)
MOSFET – EliteSiC,
60ꢀmohm, 900ꢀV, M2,
TO-247-4L
V
R
MAX
I MAX
D
(BR)DSS
DS(on)
900 V
84 mW @ 15 V
46 A
D
NTH4L060N090SC1
Features
G
• Typ. R
= 60 mW @ V = 15 V
GS
DS(on)
DS(on)
S1: Kelvin Source
S2: Power Source
Typ. R
= 43 mW @ V = 18 V
GS
• Ultra Low Gate Charge (typ. Q
= 87 nC)
S2 S1
G(tot)
• Low Effective Output Capacitance (typ. C = 113 pF)
N−CHANNEL MOSFET
oss
• 100% UIL Tested
• This Device is Halide Free and RoHS Compliant with exemption 7a,
Pb−Free 2LI (on second level interconnection)
Typical Applications
• UPS
D
• DC−DC Converter
S2
S1
• Boost Inverter
G
TO−247−4L
CASE 340CJ
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Parameter
Drain−to−Source Voltage
Symbol
Value
Unit
V
DSS
900
V
V
V
MARKING DIAGRAM
Gate−to−Source Voltage
V
GS
+22/−8
−5/+15
Recommended Opera-
tion Values of Gate−to−
Source Voltage
V
GSop
T
C
< 175°C
H4L060
090SC1
AYWWZZ
Continuous Drain
Current R
I
46
A
D
Steady
State
q
JC
T
= 25°C
C
Power Dissipation R
P
221
32
W
A
q
D
JC
JC
Continuous Drain
Current R
I
D
Steady
State
q
JC
T
C
= 100°C
Power Dissipation R
P
110
211
W
A
q
D
Pulsed Drain Current
(Note 2)
I
DM
H4L060090SC1
A
= Specific Device Code
= Assembly Site
T = 25°C
A
Y
WW
ZZ
= Year of Production
=Work Week Number
= Assembly Lot Number
Operating Junction and Storage Temperature
Range
T , T
−55 to
°C
J
stg
+175
Source Current (Body Diode)
I
S
22
A
Single Pulse Drain−to−Source Avalanche
E
AS
162
mJ
ORDERING INFORMATION
Energy (I
= 18 A, L = 1 mH) (Note 3)
L(pk)
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
Device
NTH4L060N090SC1
Package
Shipping
TO−247−4L
30 Units /
Tube
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Junction−to−Case (Note 1)
Junction−to−Ambient (Note 1)
Symbol
Value
0.68
40
Unit
°C/W
°C/W
R
q
JC
R
q
JA
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Repetitive rating, limited by max junction temperature.
3. E of 162 mJ is based on starting T = 25°C; L = 1 mH, I = 18 A,
AS
DD
J
AS
V
= 100 V, V = 15 V.
GS
© Semiconductor Components Industries, LLC, 2020
1
Publication Order Number:
January, 2023 − Rev. 2
NTH4L060N090SC1/D
NTH4L060N090SC1
ELECTRICAL CHARACTERISTICS
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
V
I
= 0 V, I = 1 mA
900
V
(BR)DSS
GS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/T
= 1 mA, referenced to 25_C
574
mV/_C
(BR)DSS
J
D
Zero Gate Voltage Drain Current
I
100
250
1
mA
V
GS
V
GS
V
GS
= 0 V, V = 900 V, T = 25_C
DSS
DS
J
= 0 V, V = 900 V, T = 175_C
DS
J
Gate−to−Source Leakage Current
ON CHARACTERISTICS
I
= +22/−8 V, V = 0 V
DS
mA
GSS
Gate Threshold Voltage
V
R
V
= V , I = 5 mA
1.8
2.7
4.3
+15
84
V
V
GS(th)
GS
DS
D
Recommended Gate Voltage
Drain−to−Source On Resistance
V
GOP
−5
V
GS
V
GS
V
GS
V
DS
= 15 V, I = 20 A, T = 25_C
60
43
76
17
mW
DS(on)
D
J
= 18 V, I = 20 A, T = 25_C
D
J
= 15 V, I = 20 A, T = 175_C
D
J
Forward Transconductance
g
FS
= 20 V, I = 20 A
S
D
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
C
V
= 0 V, f = 1 MHz, V = 450 V
1770
113
11
pF
ISS
GS
GS
DS
C
OSS
C
RSS
Q
V
= −5/15 V, V = 720 V, I = 10 A
87
nC
G(tot)
DS
D
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Gate Resistance
Q
17
G(th)
Q
27
GS
Q
26
GD
R
f = 1 MHz
3.0
W
G
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Rise Time
t
t
V
D
= −5/15 V, V = 720 V,
17
15
31
27
47
20
ns
d(on)
GS
DS
I
= 20 A, R = 2.5 W,
G
t
r
Inductive Load
Turn−Off Delay Time
Fall Time
29
d(off)
t
f
11
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
E
183
52
mJ
ON
OFF
TOT
E
E
235
DRAIN−SOURCE DIODE CHARACTERISTICS
Continuous Drain−to−Source Diode
I
V
V
= −5 V, T = 25_C
22
A
A
SD
GS
J
Forward Current
Pulsed Drain−to−Source Diode
Forward Current (Note 2)
I
= −5 V, T = 25_C
184
SDM
GS
J
Forward Diode Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Energy
Peak Reverse Recovery Current
Charge Time
V
V
V
= −5 V, I = 10 A, T = 25_C
3.9
18
V
ns
nC
mJ
A
SD
GS
SD
J
t
= −5/15 V, I = 30 A,
SD
RR
GS
S
dI /dt = 1000 A/ms, V = 720 V
DS
Q
84
RR
E
1.0
9.0
10
REC
RRM
I
t
t
ns
ns
a
b
Discharge Time
8.0
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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2
NTH4L060N090SC1
TYPICAL CHARACTERISTICS
Figure 1. On−Region Characteristics
Figure 2. Normalized On−Resistance vs. Drain
Current and Gate Voltage
Figure 3. On−Resistance Variation with
Figure 4. On−Resistance vs. Gate−to−Source
Temperature
Voltage
Figure 5. Transfer Characteristics
Figure 6. Diode Forward Voltage vs. Current
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3
NTH4L060N090SC1
TYPICAL CHARACTERISTICS (continued)
Figure 7. Gate−to−Source Voltage vs. Total
Figure 8. Capacitance vs. Drain−to−Source
Charge
Voltage
Figure 9. Unclamped Inductive Switching
Capability
Figure 10. Maximum Continuous Drain
Current vs. Case Temperature
Figure 11. Safe Operating Area
Figure 12. Single Pulse Maximum Power
Dissipation
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4
NTH4L060N090SC1
TYPICAL CHARACTERISTICS (continued)
Figure 13. Junction−to−Ambient Thermal Response
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5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247−4LD
CASE 340CJ
ISSUE A
DATE 16 SEP 2019
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13852G
TO−247−4LD
PAGE 1 OF 1
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