NTHL120N60S5Z [ONSEMI]
Power MOSFET, N-Channel, SUPERFET® V, Easy Drive, 600 V, 28 A, 120 mΩ, TO-247;
| 型号： | NTHL120N60S5Z |
| 厂家： | 
ONSEMI |
| 描述： | Power MOSFET, N-Channel, SUPERFET® V, Easy Drive, 600 V, 28 A, 120 mΩ, TO-247 |
| 文件： | 总9页 (文件大小：344K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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MOSFET - Power, Single
N-Channel, SUPERFET) V,
Easy Drive, TO247-3L
600 V, 120 mW, 28 A
V
R
MAX
I MAX
D
DSS
DS(ON)
600 V
120 mW @ 10 V
28 A
D
NTHL120N60S5Z
Description
G
SUPERFET V MOSFET Easy Drive series combines excellent
switching performance without sacrificing ease of use and EMI issues
for both hard and soft switching topologies.
Features
S
• 650 V @ T = 150°C
J
• Typ. R
= 96 mW
• 100% Avalanche Tested
DS(on)
• Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
Applications
G
D
• Telecom / Server Power Supplies
• EV Charger / UPS / Solar / Industrial Power Supplies
S
TO−247 Long Leads
CASE 340CX
ABSOLUTE MAXIMUM RATINGS (T = 25°C, Unless otherwise noted)
J
Parameter
Drain−to−Source Voltage
Symbol
Value
600
20
Unit
V
MARKING DIAGRAM
V
DSS
V
GSS
Gate−to−Source Voltage
DC
V
AC (f > 1 Hz)
20
Continuous Drain Current
T
= 25°C
= 100°C
= 25°C
= 25°C
= 25°C
I
28*
17*
160
81*
81*
A
C
D
T120N
60S5Z
AYWWZZ
T
C
Power Dissipation
T
C
T
C
T
C
P
W
A
D
Pulsed Drain Current (Note 1)
I
DM
Pulsed Source Current
(Body Diode) (Note 1)
I
A
SM
T120N60S5Z = Specific Device Code
Operating Junction and Storage Temperature T , T
Range
−55 to
+150
°C
J
STG
A
YWW
ZZ
= Assembly Location
= Data Code (Year & Week)
= Assembly Lot
Source Current (Body Diode)
I
28*
A
S
Single Pulse Avalanche
Energy
I = 4.6 A,
G
E
AS
191
mJ
L
R
= 25 W
ORDERING INFORMATION
Avalanche Current
I
4.6
1.6
120
50
A
AS
Device
NTHL120N60S5Z
Package
Shipping
Repetitive Avalanche Energy (Note 1)
MOSFET dv/dt
E
mJ
AR
TO−247
30 Units / Tube
dv/dt
V/ns
Peak Diode Recovery dv/dt (Note 2)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 seconds)
T
L
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
*Drain current limited by maximum junction temperature.
1. Repetitive rating: pulse−width limited by maximum junction temperature.
2. I ≤ 11.5 A, di/dt ≤ 200 A/ms, V ≤ 400 V, starting T = 25°C.
SD
DD
J
© Semiconductor Components Industries, LLC, 2021
1
Publication Order Number:
August, 2021 − Rev. 1
NTHL120N60S5Z/D
NTHL120N60S5Z
THERMAL CHARACTERISTICS
Parameter
Symbol
Value
0.78
40
Unit
Thermal Resistance, Junction−to−Case, Max.
Thermal Resistance, Junction−to−Ambient, Max.
R
°C/W
q
JC
R
q
JA
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
V
I
= 0 V, I = 1 mA, T = 25_C
600
−
−
−
V
(BR)DSS
GS
D
J
Drain−to−Source Breakdown Voltage
Temperature Coefficient
DV
/
= 10 mA, Referenced to 25_C
−
630
mV/_C
(BR)DSS
D
DT
J
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
ON CHARACTERISTICS
I
V
GS
= 0 V, V = 600 V, T = 25_C
GS DS
−
−
−
−
1
5
mA
mA
DSS
GSS
DS
J
I
V
= 20 V, V = 0 V
Drain−to−Source On Resistance
Gate Threshold Voltage
R
V
= 10 V, I = 11.5 A, T = 25_C
−
2.4
−
96
−
120
4.0
−
mW
V
DS(on)
GS
D
J
V
V
GS
= V , I = 2.2 mA, T = 25_C
GS(th)
DS
D
J
Forward Trans−conductance
g
FS
V
DS
= 20 V, I = 11.5 A
17.1
S
D
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
C
V
= 400 V, V = 0 V, f = 250 kHz
−
−
−
2088
35
−
−
−
pF
ISS
DS
GS
Output Capacitance
C
OSS
Time Related Output Capacitance
C
I
= Constant, V = 0 V to 400 V,
547
OSS(tr.)
D
DS
= 0 V
V
GS
Energy Related Output Capacitance
Total Gate Charge
C
V
= 0 V to 400 V, V = 0 V
−
−
−
−
−
59
40
9
−
−
−
−
−
OSS(er.)
DS
GS
Q
V
= 400 V, I = 11.5 A, V = 10 V
nC
G(tot)
DD
D
GS
Gate−to−Source Charge
Gate−to−Drain Charge
Gate Resistance
Q
GS
Q
11
3.5
GD
R
f = 1 MHz
W
G
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Rise Time
t
V
= 0/10 V, V = 400 V,
−
−
−
−
23
13
78
3
−
−
−
−
ns
d(on)
GS
D
DD
I
= 11.5 A, R = 7.5 W
G
t
r
Turn-Off Delay Time
Fall Time
t
d(off)
t
f
SOURCE-TO−DRAIN DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
Reverse Recovery Charge
V
V
GS
= 0 V, I = 11.5 A, T = 25_C
−
−
−
−
1.2
−
V
SD
RR
SD
J
t
V
= 0 V, I = 11.5 A,
277
3664
ns
nC
GS
SD
dI/dt = 100 A/ms, V = 400 V
DD
Q
−
RR
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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2
NTHL120N60S5Z
TYPICAL CHARACTERISTICS
40
30
20
10
0
100
V
= 6.0 V
= 7.0 V
GS
V
=
T
= 25°C
V
DS
= 20 V
GS
C
10.0 V
V
V
GS
= 5.0 V
GS
150°C
10
V
GS
= 4.5 V
25°C
−55°C
V
= 4.0 V
GS
1
6
0
5
10
15
20
2
3
4
5
V
GS
, GATE−SOURCE VOLTAGE (V)
V
DS
, DRAIN−SOURCE VOLTAGE (V)
Figure 2. Transfer Characteristics
Figure 1. On−Region Characteristics
100
0.25
0.2
0.15
0.1
0.05
0
V
GS
= 0 V
T
C
= 25°C
10
1
150°C
V
= 10 V
GS
V
= 20 V
GS
25°C
−55°C
0.1
0
10
20
30
40
0
0.2
V , BODY DIODE FORWARD VOLTAGE (V)
SD
0.4
0.6
0.8
1.0
1.2
I , DRAIN CURRENT (A)
D
Figure 3. On−Resistance Variation vs.
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current and Temperature
Drain Current and Gate Voltage
6
10
10
8
V
= 0 V
GS
I
D
= 11.5 A
C
C
C
= C + C (C = shorted)
gs gd ds
iss
f = 250 kHz
5
= C + C
10
oss
rss
ds
gd
= C
gd
4
10
V
DS
= 130 V
V
C
iss
3
6
10
= 400 V
DS
2
10
C
C
4
oss
1
10
rss
2
0
0
10
−1
10
0
10
30
40
0
100
200
300
400
500
600
20
Q , TOTAL GATE CHARGE (nC)
g
V
DS
, DRAIN−SOURCE VOLTAGE (V)
Figure 6. Gate Charge Characteristics
Figure 5. Capacitance Characteristics
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3
NTHL120N60S5Z
TYPICAL CHARACTERISTICS
1.2
1.1
1.0
3.0
V
= 10 V
= 11.5 A
GS
V
= 0 V
= 10 mA
GS
I
D
I
D
2.5
2.0
1.5
1.0
0.9
0.8
0.5
0
−75 −50 −25
0
25 50 75 100 125 150 175
−75 −50 −25
0
25 50 75 100 125 150 175
T , JUNCTION TEMPERATURE (°C)
J
T , JUNCTION TEMPERATURE (°C)
J
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On−Resistance Variation
vs. Temperature
1000
100
10
30
25
20
T
= 25°C
C
T = 150°C
J
Single Pulse
100 ms
10 ms
15
10
1 ms
Operation in this
Area is Limited
by R
10 ms
DC
1
DS(on)
5
0
0.1
25
50
75
100
125
150
1
10
100
1000
T , CASE TEMPERATURE (°C)
C
V
DS
, DRAIN−SOURCE VOLTAGE (V)
Figure 10. Maximum Drain Current vs. Case
Temperature
Figure 9. Maximum Safe Operating Area
8
7
6
5
4
3
2
1
0
600
0
100
200
300
400
500
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. EOSS vs. Drain to Source Voltage
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4
NTHL120N60S5Z
TYPICAL CHARACTERISTICS
1
D = 0.5
D = 0.2
0.1
D = 0.1
D = 0.05
Z
T
(t) = 0.78°C/W Max
q
JC
D = 0.02
= P
x Z (t) + T
q
JC C
JM
DM
D = 0.01
Single Pulse
Duty Cycle, D = t /t
1
2
0.01
1
0.1
0.00001
0.001
0.01
0.0001
t, RECTANGULAR PULSE DURATION (s)
Figure 12. Transient Thermal Impedance
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5
NTHL120N60S5Z
V
GS
R
Q
g
L
V
DD
Q
Q
gs
gd
V
GS
DUT
I
G
= Const.
Charge
Figure 13. Gate Charge Test Circuit & Waveform
R
L
V
DS
GS
90%
90%
10%
90%
V
DS
V
DD
V
GS
R
G
10%
V
DUT
V
GS
t
r
t
f
t
t
d(off)
d(on)
t
on
t
off
Figure 14. Resistive Switching Test Circuit & Waveforms
L
2
1
2
EAS
+
@ LIAS
V
DS
BV
DSS
I
D
I
AS
R
G
V
DD
I (t)
D
DUT
V
DD
V
GS
V
DS
(t)
t
p
Time
t
p
Figure 15. Unclamped Inductive Switching Test Circuit & Waveforms
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6
NTHL120N60S5Z
+
DUT
V
SD
−
I
SD
L
Driver
R
G
Same Type
as DUT
V
DD
V
GS
− dv/dt controlled by R
G
− I controlled by pulse period
SD
Gate Pulse Width
D +
Gate Pulse Period
V
GS
10 V
(Driver)
I
, Body Diode Forward Current
FM
I
di/dt
SD
(DUT)
I
RM
Body Diode Reverse Current
Body Diode Recovery dv/dt
V
DS
V
DD
V
SD
(DUT)
Body Diode
Forward Voltage Drop
Figure 16. Peak Diode Recovery dv/dt Test Circuit & Waveforms
SUPERFET is a registered trademark of Semiconductor Components Industries, LLC or its subsidiaries in the United States and/or other countries.
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7
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247−3LD
CASE 340CX
ISSUE A
DATE 06 JUL 2020
GENERIC
MARKING DIAGRAM*
XXXXX = Specific Device Code
A
Y
= Assembly Location
= Year
WW
G
= Work Week
= Pb−Free Package
XXXXXXXXX
AYWWG
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”, may
or may not be present. Some products may
not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON93302G
TO−247−3LD
PAGE 1 OF 1
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