NTLJD3182FZTBG [ONSEMI]
Power MOSFET and Schottky Diode −20 V, −4.0 A, μCool™ Single P−Channel & Schottky Barrier Diode, ESD; 功率MOSFET和肖特基二极管-20 V， -4.0 A， μCool ™单P沟道和肖特基二极管， ESD
| 型号： | NTLJD3182FZTBG |
| 厂家： | 
ONSEMI |
| 描述： | Power MOSFET and Schottky Diode −20 V, −4.0 A, μCool™ Single P−Channel & Schottky Barrier Diode, ESD |
| 文件： | 总8页 (文件大小：129K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NTLJD3182FZ
Power MOSFET and
Schottky Diode
−20 V, −4.0 A, mCoolt Single P−Channel
& Schottky Barrier Diode, ESD
Features
• WDFN 2x2 mm Package with Exposed Drain Pads for Excellent
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Thermal Conduction
• Lowest R
Solution in 2x2 mm Package
DS(on)
P−CHANNEL MOSFET
• Footprint Same as SC−88 Package
• Low Profile (< 0.8 mm) for Easy Fit in Thin Environments
• ESD Protected
V
R
DS(on)
Max
I
D
Max
(BR)DSS
100 mW @ −4.5 V
144 mW @ −2.5 V
200 mW @ −1.8 V
−20 V
−4.0 A
• High Current Schottky Diode: 2 A Current Rating
• This is a Pb−Free Device
Applications
SCHOTTKY DIODE
• Optimized for Battery and Load Management Applications in
Portable Equipment
V
Max
V Max
F
I Max
F
R
20 V
0.47 V
2.0 A
• Li−Ion Battery Charging and Protection Circuits
• DC−DC Buck Circuit
A
S
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Parameter
Drain−to−Source Voltage
Symbol
Value
−20
8.0
Unit
V
G
V
DSS
Gate−to−Source Voltage
V
GS
V
Continuous Drain
Current (Note 1)
T = 25°C
I
−3.2
−2.3
−4.0
1.5
A
A
D
Steady
State
T = 85°C
A
K
D
t ≤ 5 s
T = 25°C
A
P−CHANNEL MOSFET
SCHOTTKY DIODE
Power Dissipation
(Note 1)
Steady
State
P
W
D
T = 25°C
A
MARKING
DIAGRAM
D
t ≤ 5 s
2.3
K
Continuous Drain
Current (Note 2)
T = 25°C
I
−2.2
−1.6
0.71
A
A
D
WDFN6
CASE 506AN
1
2
3
6
5
4
Steady
State
T = 85°C
A
JJMG
Power Dissipation
(Note 2)
P
W
D
G
T = 25°C
A
Pin 1
JJ = Specific Device Code
Pulsed Drain Current
t = 10 ms
I
−16
A
p
DM
M
= Date Code
Operating Junction and Storage Temperature T , T
−55 to
150
°C
J
STG
G
= Pb−Free Package
(Note: Microdot may be in either location)
Source Current (Body Diode) (Note 2)
I
S
−1.0
A
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
260
°C
L
PIN CONNECTIONS
K
SCHOTTKY MAXIMUM RATINGS (T = 25°C unless otherwise stated)
J
A
N/C
D
K
G
S
1
2
3
6
5
4
Parameter
Peak Repetitive Reverse Voltage
DC Blocking Voltage
Symbol
Value
30
Unit
V
V
RRM
V
R
30
V
D
Average Rectified Forward Current
I
F
2.0
A
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
(Top View)
1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq
[2 oz] including traces).
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
2. Surface Mounted on FR4 Board using the minimum recommended pad size,
2
(30 mm , 2 oz Cu).
©
Semiconductor Components Industries, LLC, 2008
1
Publication Order Number:
December, 2008 − Rev. 0
NTLJD3180PZ/D
NTLJD3182FZ
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Max
83
Unit
Junction−to−Ambient – Steady State (Note 3)
Junction−to−Ambient – Steady State Min Pad (Note 4)
Junction−to−Ambient – t ≤ 5 s (Note 3)
R
q
JA
R
q
JA
177
54
°C/W
R
q
JA
3. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces).
2
4. Surface Mounted on FR4 Board using the minimum recommended pad size (30 mm , 2 oz Cu).
MOSFET ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
V
GS
= 0 V, I = −250 mA
−20
V
(BR)DSS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/T
I = −250 mA, Ref to 25°C
D
13
mV/°C
(BR)DSS
J
Zero Gate Voltage Drain Current
I
T = 25°C
−1.0
−10
10
mA
mA
DSS
J
V
DS
= −16 V, V = 0 V
GS
T = 85°C
J
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
I
V
DS
= 0 V, V
= 8.0 V
GSS
GS
V
V
GS
= V , I = −250 mA
−0.4
−1.0
V
GS(TH)
DS
D
Gate Threshold Temperature Coeffi-
cient
V
/T
2.0
mV/°C
GS(TH)
J
Drain−to−Source On−Resistance
R
V
V
V
= −4.5 V, I = −2.0 A
68
90
100
144
200
mW
DS(on)
GS
GS
GS
D
= −2.5 V, I = −2.0 A
D
= −1.8 V, I = −1.7 A
125
6.5
D
Forward Transconductance
g
FS
V
= −16 V, I = −2.0 A
S
DS
D
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
C
450
90
pF
ISS
V
= 0 V, f = 1.0 MHz,
DS
GS
Output Capacitance
C
OSS
C
RSS
V
= −10 V
Reverse Transfer Capacitance
Total Gate Charge
62
Q
5.2
0.3
0.84
1.5
7.8
nC
ns
G(TOT)
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Q
G(TH)
V
= −4.5 V, V = −10 V,
DS
GS
I
D
= −2.0 A
Q
GS
GD
Q
SWITCHING CHARACTERISTICS (Note 6)
Turn−On Delay Time
Rise Time
t
6.6
9.0
d(ON)
t
r
V
= −4.5 V, V = −5.0 V,
DD
GS
I
D
= −2.0 A, R = 2.0 W
G
Turn−Off Delay Time
Fall Time
t
14
d(OFF)
t
f
12.5
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Recovery Voltage
V
T = 25°C
−0.73
−0.62
23
−1.0
SD
J
V
GS
= 0 V, I = −1.0 A
V
S
T = 125°C
J
Reverse Recovery Time
Charge Time
t
RR
t
t
13
ns
a
V
GS
= 0 V, d /d = 100 A/ms,
ISD t
I = −1.0 A
S
Discharge Time
10
b
Reverse Recovery Time
Q
10
nC
RR
5. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
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2
NTLJD3182FZ
SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Parameter
Symbol
Test Conditions
I = 100 mA
Min
Typ
0.34
0.47
17
Max
0.39
0.53
20
Unit
Maximum Instantaneous
Forward Voltage
V
F
V
F
I = 1.0 A
F
Maximum Instantaneous
Reverse Current
I
R
V
R
V
R
V
R
= 30 V
= 20 V
= 10 V
mA
3.0
8.0
2.0
4.5
Capacitance
C
V
R
= 5.0 V, f = 1.0 MHz
38
pF
SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS (T = 85°C unless otherwise noted)
J
Parameter
Symbol
Test Conditions
I = 100 mA
Min
Typ
0.22
0.40
0.22
0.11
0.06
Max
0.35
0.50
2.5
Unit
Maximum Instantaneous
Forward Voltage
V
F
V
F
I = 1.0 A
F
Maximum Instantaneous
Reverse Current
I
R
V
R
V
R
V
R
= 30 V
= 20 V
= 10 V
mA
1.6
1.2
SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS (T = 125°C unless otherwise noted)
J
Parameter
Symbol
Test Conditions
I = 100 mA
Min
Typ
0.20
0.40
2.0
Max
0.29
0.47
20
Unit
Maximum Instantaneous
Forward Voltage
V
F
V
F
I = 1.0 A
F
Maximum Instantaneous
Reverse Current
I
R
V
R
V
R
V
R
= 30 V
= 20 V
= 10 V
mA
1.1
10.9
8.4
0.63
ORDERING INFORMATION
Device Order Number
NTLJD3182FZTAG
Package Type
Tape & Reel Size†
WDFN6
(Pb−Free)
3000 / Tape & Reel
NTLJD3182FZTBG
WDFN6
(Pb−Free)
3000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specification Brochure, BRD8011/D.
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3
NTLJD3182FZ
TYPICAL PERFORMANCE CURVES (T = 25°C unless otherwise noted)
J
8
8
6
4
−2.2 V
= −2.5 V to −5 V
T = 25°C
J
V
DS
≥ 5 V
V
GS
−2.0 V
−1.8 V
6
4
−1.6 V
−1.4 V
T = 25°C
J
2
0
2
0
−1.2 V
−1.0 V
T = 125°C
J
T = −55°C
J
0
1
2
3
4
5
0
0.5
1
1.5
2
2.5
3
−V , DRAIN−TO−SOURCE VOLTAGE (VOLTS)
DS
−V , GATE−TO−SOURCE VOLTAGE (VOLTS)
GS
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
0.12
0.1
0.32
0.28
0.24
0.20
0.16
0.12
V
GS
= −4.5 V
T = 25°C
J
T = 125°C
J
V
GS
= −1.8 V
0.08
0.06
T = 25°C
J
V
GS
= −2.5 V
0.08
0.04
0
T = −55°C
J
0.04
0.02
V
GS
= −4.5 V
2.0
4.0
6.0
8.0
1.5
2.5
3.5
4.5
5.5
6.5
7.5
−I , DRAIN CURRENT (AMPS)
D
−I , DRAIN CURRENT (AMPS)
D
Figure 3. On−Resistance versus Drain Current
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
100000
10000
1000
1.75
1.5
V
GS
= 0 V
I
V
= −2 A
D
= −4.5 V
GS
1.25
T = 150°C
J
1.0
0.75
0.5
T = 125°C
J
100
−50
−25
0
25
50
75
100 125
150
0
4
8
12
16
20
T , JUNCTION TEMPERATURE (°C)
J
−V , DRAIN−TO−SOURCE VOLTAGE (VOLTS)
DS
Figure 5. On−Resistance Variation with
Figure 6. Drain−to−Source Leakage Current
Temperature
versus Voltage
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4
NTLJD3182FZ
TYPICAL PERFORMANCE CURVES (T = 25°C unless otherwise noted)
J
600
400
5
T = 25°C
J
QT
V
GS
= 0 V
4
3
2
C
iss
V
GS
Q
Q
GS
GD
200
0
1
0
C
oss
I
= −3.8 A
D
T = 25°C
J
C
rss
0
5
10
15
20
0
1
2
3
4
5
6
DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Q , TOTAL GATE CHARGE (nC)
G
Figure 7. Capacitance Variation
Figure 8. Gate−To−Source and Drain−To−Source
Voltage versus Total Charge
2
1000
100
V
I
= −5.0 V
= −2.0 A
= −4.5 V
V
GS
= 0 V
DD
T = 25°C
J
D
V
GS
1.5
1
t
d(off)
t
f
t
r
10
1
t
d(on)
0.5
0
1
10
100
0
0.2
0.4
0.6
0.8
1.0
R , GATE RESISTANCE (OHMS)
G
−V , SOURCE−TO−DRAIN VOLTAGE (VOLTS)
SD
Figure 9. Resistive Switching Time
Variation versus Gate Resistance
Figure 10. Diode Forward Voltage versus Current
100
10
100 ms
1 ms
10 ms
1
V
GS
= 20 V
SINGLE PULSE
= 25°C
T
C
0.1
dc
R
DS(on)
LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.01
0.1
1
10
100
−V , DRAIN−TO−SOURCE VOLTAGE (VOLTS)
DS
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
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5
NTLJD3182FZ
TYPICAL PERFORMANCE CURVES (T = 25°C unless otherwise noted)
J
1000
100
D = 0.5
0.2
0.1
*See Note 2 on Page 1
10
P
(pk)
0.05
0.02
0.01
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
1
t
1
T
− T = P
R (t)
q
JA
J(pk)
A
(pk)
t
2
SINGLE PULSE
0.00001 0.0001
DUTY CYCLE, D = t /t
1
2
0.1
0.000001
0.001
0.01
t, TIME (s)
0.1
1
10
100
1000
Figure 12. Thermal Response
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6
NTLJD3182FZ
TYPICAL SCHOTTKY PERFORMANCE CURVES (T = 25°C unless otherwise noted)
J
10
1.0
0.1
10
T = 85°C
J
1.0
T = 125°C
J
T = 85°C
J
T = 25°C
J
T = 125°C
J
T = 25°C
T = −55°C
J
J
0.1
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
V , INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
F
V , MAXIMUM FORWARD VOLTAGE (VOLTS)
F
Figure 13. Typical Forward Voltage
Figure 14. Maximum Forward Voltage
1.0E+0
100E-3
1.0E+0
100E-3
T = 125°C
J
10E-3
1.0E-3
100E-6
10E-6
10E-3
1.0E-3
100E-6
10E-6
T = 125°C
J
T = 85°C
J
T = 85°C
J
T = 25°C
J
T = 25°C
J
1.0E-6
100E-9
1.0E-6
100E-9
0
10
20
30
0
10
20
30
V , REVERSE VOLTAGE (VOLTS)
R
V , REVERSE VOLTAGE (VOLTS)
R
Figure 15. Typical Reverse Current
Figure 16. Maximum Reverse Current
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7
NTLJD3182FZ
PACKAGE DIMENSIONS
WDFN6, 2x2
CASE 506AN−01
ISSUE D
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION b APPLIES TO PLATED
TERMINAL AND IS MEASURED BETWEEN
0.15 AND 0.30 mm FROM THE TERMINAL TIP.
4. COPLANARITY APPLIES TO THE EXPOSED
PAD AS WELL AS THE TERMINALS.
D
A
B
EXPOSED Cu
MOLD CMPD
PLATING
DETAIL B
PIN ONE
REFERENCE
OPTIONAL
MILLIMETERS
E
CONSTRUCTIONS
DIM
A
MIN
0.70
0.00
MAX
0.80
0.05
A1
A3
b
0.10
C
0.20 REF
0.25
0.35
L
L
D
2.00 BSC
0.10
C
D2
E
0.57
2.00 BSC
0.67
1.10
TOP VIEW
L1
E2
e
0.90
0.65 BSC
0.15 BSC
0.25 REF
DETAIL A
A3
DETAIL B
F
0.10
0.08
C
C
OPTIONAL
K
CONSTRUCTIONS
L
0.20
---
0.30
0.10
A
L1
NOTE 4
A1
SEATING
PLANE
SOLDERMASK DEFINED
MOUNTING FOOTPRINT
C
SIDE VIEW
1.74
0.10
D2
C
A
B
2X
0.77
D2
F
L
1
3
1.10
6X
0.47
DETAIL A
2.30
E2
0.10
C
A
B
PACKAGE
OUTLINE
6
4
K
6X b
1
0.10
0.05
C
C
A
B
e
0.65
PITCH
NOTE 3
6X
0.35
DIMENSIONS: MILLIMETERS
BOTTOM VIEW
mCool is a trademark of Semiconductor Components Industries, LLC (SCILLC).
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5773−3850
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
For additional information, please contact your local
Sales Representative
NTLJD3182FZ/D
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