NTLJD3183CZ [ONSEMI]
Power MOSFET 20 V/−20 V, 4.7 A/−4.0 A, μCool™ Complementary, 2x2 mm, WDFN Package; 功率MOSFET的20 V / -20 V， 4.7 A / -4.0 A， μCool ™互补， 2×2毫米， WDFN封装
| 型号： | NTLJD3183CZ |
| 厂家： | 
ONSEMI |
| 描述： | Power MOSFET 20 V/−20 V, 4.7 A/−4.0 A, μCool™ Complementary, 2x2 mm, WDFN Package |
| 文件： | 总9页 (文件大小：136K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NTLJD3183CZ
Power MOSFET
20 V/−20 V, 4.7 A/−4.0 A, mCoolt
Complementary, 2x2 mm, WDFN Package
Features
• WDFN 2x2 mm Package with Exposed Drain Pads for Excellent
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Thermal Conduction
• Lowest R
in 2x2 mm Package
DS(on)
V
R
MAX
I MAX
D
(BR)DSS
DS(on)
• Footprint Same as SC−88 Package
• Low Profile (< 0.8 mm) for Easy Fit in Thin Environments
• ESD Protected
68 mW @ 4.5 V
86 mW @ 2.5 V
4.7 A
4.2 A
N−Channel
20 V
120 mW @ 1.8 V
100 mW @ −4.5 V
144 mW @ −2.5 V
200 mW @ −1.8 V
3.5 A
−4.0 A
−3.3 A
−2.8 A
• This is a Pb−Free Device
Applications
P−Channel
−20 V
• Optimized for Battery and Load Management Applications in
Portable Equipment
• Load Switch
• Level Shift Circuits
MARKING
DIAGRAM
D2
D1
• DC−DC Converters
1
2
3
6
5
4
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
WDFN6
CASE 506AN
JNMG
G
Parameter
Drain−to−Source Voltage
Symbol
Value
20
Unit
V
Pin 1
V
DSS
Gate−to−Source Voltage
V
GS
8.0
V
JN = Specific Device Code
M
G
= Date Code
= Pb−Free Package
T = 25°C
3.8
2.7
4.7
N−Channel
Continuous Drain
Current (Note 1)
I
D
A
Steady
State
A
T = 85°C
A
(Note: Microdot may be in either location)
t ≤ 5 s
T = 25°C
A
T = 25°C
−3.2
−2.3
−4.0
1.5
P−Channel
Continuous Drain
Current (Note 1)
I
A
Steady
State
A
D
PIN CONNECTIONS
D1
T = 85°C
A
t ≤ 5 s
Steady
State
T = 25°C
A
Power Dissipation
(Note 1)
P
I
W
D
S1
G1
D2
D1
G2
S2
1
2
3
6
5
4
T = 25°C
A
t ≤ 5 s
2.3
2.6
T = 25°C
A
N−Channel
Continuous Drain
Current (Note 2)
P−Channel
Continuous Drain
Current (Note 2)
A
A
D
Steady
State
D2
T = 85°C
A
1.9
T = 25°C
A
−2.2
−1.6
0.71
I
D
Steady
State
T = 85°C
A
(Top View)
Power Dissipation
(Note 2)
Steady
State
P
W
A
D
T = 25°C
A
ORDERING INFORMATION
N−Ch
P−Ch
18
−16
−55 to
150
Pulsed Drain Current
t = 10 ms
p
I
DM
†
Device
Package
Shipping
Operating Junction and Storage Temperature T , T
°C
°C
J
STG
NTLJD3183CZTAG
WDFN6 3000/Tape & Reel
(Pb−Free)
Lead Temperature for Soldering Purposes
T
260
L
(1/8″ from case for 10 s)
NTLJD3183CZTBG
WDFN6 3000/Tape & Reel
(Pb−Free)
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq
[2 oz] including traces).
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
2. Surface Mounted on FR4 Board using the minimum recommended pad size
2
of 30 mm , 2 oz Cu.
©
Semiconductor Components Industries, LLC, 2008
1
Publication Order Number:
December, 2008 − Rev. 0
NTLJD3183CZ/D
NTLJD3183CZ
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Max
Unit
SINGLE OPERATION (SELF−HEATED)
Junction−to−Ambient – Steady State (Note 3)
Junction−to−Ambient – Steady State Min Pad (Note 4)
Junction−to−Ambient – t ≤ 5 s (Note 3)
R
83
177
54
q
JA
R
q
°C/W
JA
R
q
JA
DUAL OPERATION (EQUALLY HEATED)
Junction−to−Ambient – Steady State (Note 3)
Junction−to−Ambient – Steady State Min Pad (Note 4)
Junction−to−Ambient – t ≤ 5 s (Note 3)
R
58
133
40
q
JA
R
q
°C/W
JA
R
q
JA
3. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces).
2
4. Surface Mounted on FR4 Board using the minimum recommended pad size (30 mm , 2 oz Cu).
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Parameter
Symbol
N/P
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
N
P
N
P
N
P
N
P
N
P
20
V
I
= 250 mA
= −250 mA
= 250 mA
= −250 mA
(BR)DSS
D
V
= 0 V
GS
I
D
−20
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/T
15
13
mV/°C
mA
I
D
(BR)DSS
J
Ref to 25°C
= 0 V, V = 16 V
I
D
Zero Gate Voltage Drain Current
I
V
1.0
−1.0
10
DSS
GS
DS
T = 25°C
J
V
GS
= 0 V, V = −16 V
DS
V
GS
= 0 V, V = 16 V
DS
T = 85°C
J
V
GS
= 0 V, V = −16 V
−10
10
DS
Gate−to−Source Leakage Current
I
mA
GSS
V
= 0 V, V
= 8.0 V
DS
GS
10
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
V
N
P
N
P
N
P
N
P
N
P
N
P
0.4
= −250 mA −0.4
= 250 mA
1.0
V
I
= 250 mA
GS(TH)
D
V
= V
DS
GS
I
D
−1.0
Gate Threshold Temperature
Coefficient
V
/T
−3.0
2.0
34
mV/°C
mW
I
D
GS(TH)
J
Ref to 25°C
I
D
= −250 mA
Drain−to−Source On Resistance
R
V
= 4.5 V , I = 2.0 A
68
DS(on)
GS
D
V
= −4.5 V , I = −2.0 A
68
100
86
GS
D
V
= 2.5 V , I = 2.0 A
42
GS
D
V
= −2.5 V, I = −2.0 A
90
144
120
200
GS
D
V
= 1.8 V , I = 1.7 A
53
GS
D
V
= −1.8 V, I = −1.7 A
125
7.0
6.5
GS
D
Forward Transconductance
g
FS
V
= 5.0 V, I = 2.0 A
S
DS
D
V
= −5.0 V , I = −2.0 A
D
DS
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NTLJD3183CZ
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Parameter
Symbol
N/P
Test Conditions
Min
Typ
Max
Unit
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
C
N
P
N
P
N
P
N
P
N
P
N
P
N
P
V
= 10 V
= −10 V
= 10 V
355
450
70
pF
ISS
DS
DS
DS
V
DS
Output Capacitance
C
C
V
OSS
f = 1.0 MHz, V = 0 V
GS
V
DS
= −10 V
= 10 V
90
Reverse Transfer Capacitance
Total Gate Charge
V
50
RSS
V
DS
= −10 V
62
Q
V
GS
= 4.5 V, V = 10 V, I = 3.8 A
4.6
5.2
0.3
0.3
0.6
0.84
1.15
1.5
7.0
7.8
nC
G(TOT)
DS
D
V
V
V
V
= −4.5 V, V = −10 V, I = −3.8 A
DS D
GS
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Q
V
= 4.5 V, V = 10 V, I = 3.8 A
GS DS D
G(TH)
= −4.5 V, V = −10 V, I = −3.8 A
GS
DS
D
Q
V
= 4.5 V, V = 10 V, I = 3.8 A
GS DS D
GS
= −4.5 V, V = −10 V, I = −3.8 A
GS
DS
D
Q
V
= 4.5 V, V = 10 V, I = 3.8 A
GS DS D
GD
= −4.5 V, V = −10 V, I = −3.8 A
GS
DS
D
SWITCHING CHARACTERISTICS (Note 6)
Turn−On Delay Time
Rise Time
t
6.2
5.5
15
ns
d(ON)
t
r
N
P
V
D
= 4.5 V, V = 5 V,
DD
GS
I
= 2.0 A, R = 2.0 W
G
Turn−Off Delay Time
Fall Time
t
d(OFF)
t
f
14
Turn−On Delay Time
Rise Time
t
6.6
9.0
14
d(ON)
t
r
V
= −4.5 V, V = −5 V,
DD
GS
D
I
= −2.0 A, R = 2.0 W
G
Turn−Off Delay Time
Fall Time
t
d(OFF)
t
f
12.5
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
N
P
N
P
N
P
N
P
N
P
N
P
I
= 1.0 A
0.65
1.0
V
SD
S
V
= 0 V, T = 25 °C
J
GS
I
I
I
I
I
I
= −1.0 A
−0.73 −1.0
S
I
S
= 1.0 A
0.55
−0.62
21
V
GS
= 0 V, T = 125 °C
J
= −1.0 A
= 1.0 A
= −1.0 A
= 1.0 A
= −1.0 A
= 1.0 A
= −1.0 A
= 1.0 A
= −1.0 A
S
Reverse Recovery Time
Charge Time
t
I
S
ns
RR
23
S
t
t
I
S
10.5
13
a
S
V
GS
= 0 V,
dI / dt = 100 A/ms
S
Discharge Time
I
S
10.5
10
b
S
Reverse Recovery Charge
Q
I
S
7.0
nC
RR
10
S
5. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
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3
NTLJD3183CZ
N−CHANNEL TYPICAL PERFORMANCE CURVES (T = 25°C unless otherwise noted)
J
10
10
8
V
DS
≥ 5 V
1.8 V
1.6 V
V
GS
= 2 V to 5 V
8
6
4
6
T = 25°C
J
1.4 V
4
T = 25°C
J
2
0
2
0
1.2 V
1.0 V
T = 125°C
J
T = −55°C
J
0
1
2
3
4
5
0
0.5
1
1.5
2
2.5
3
V , DRAIN−TO−SOURCE VOLTAGE (VOLTS)
DS
V , GATE−TO−SOURCE VOLTAGE (VOLTS)
GS
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
0.08
0.06
0.04
0.02
0
0.12
0.10
0.08
0.06
V
GS
= 4.5 V
T = 25°C
J
T = 125°C
J
V
= 1.8 V
GS
V
= 2.5 V
= 4.5 V
GS
T = 25°C
J
0.04
0.02
0
V
GS
T = −55°C
J
2.0
4.0
6.0
8.0
1
2
3
4
5
6
7
8
I , DRAIN CURRENT (AMPS)
D
I , DRAIN CURRENT (AMPS)
D
Figure 3. On−Resistance versus Drain Current
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
100000
10000
1000
1.75
1.5
V
= 0 V
I
V
= 2 A
GS
D
= 4.5 V
GS
1.25
T = 150°C
J
1.0
0.75
0.5
T = 125°C
J
100
−50
−25
0
25
50
75
100 125
150
0
4
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
DS
8
12
16
20
T , JUNCTION TEMPERATURE (°C)
V
J
Figure 5. On−Resistance Variation with
Figure 6. Drain−to−Source Leakage Current
Temperature
versus Voltage
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4
NTLJD3183CZ
N−CHANNEL TYPICAL PERFORMANCE CURVES (T = 25°C unless otherwise noted)
J
5
1000
800
600
400
T = 25°C
= V = 0 V
GS
J
QT
V
DS
4
3
2
V
GS
C
iss
Q
Q
GS
GD
C
rss
200
0
1
0
I
= 3.8 A
D
C
oss
T = 25°C
J
10
5
0
5
10
15
20
0
1
2
3
4
5
V
GS
V
DS
Q , TOTAL GATE CHARGE (nC)
G
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 8. Gate−To−Source and Drain−To−Source
Voltage versus Total Charge
Figure 7. Capacitance Variation
100
2.5
2
V
I
= 5.0 V
= 2.0 A
= 4.5 V
V
= 0 V
DD
GS
T = 25°C
J
D
t
f
V
GS
t
d(off)
1.5
1
t
r
10
t
d(on)
0.5
0
1
1
10
100
0
0.2
0.4
0.6
0.8
1.0
R , GATE RESISTANCE (OHMS)
G
V , SOURCE−TO−DRAIN VOLTAGE (VOLTS)
SD
Figure 9. Resistive Switching Time
Variation versus Gate Resistance
Figure 10. Diode Forward Voltage versus Current
100
10
100 ms
1 ms
10 ms
1
V
GS
= 20 V
SINGLE PULSE
= 25°C
T
C
0.1
dc
R
DS(on)
LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.01
0.1
1
10
100
V , DRAIN−TO−SOURCE VOLTAGE (VOLTS)
DS
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
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NTLJD3183CZ
P−CHANNEL TYPICAL PERFORMANCE CURVES (T = 25°C unless otherwise noted)
J
8
8
6
4
−2.2 V
= −2.5 V to −5 V
T = 25°C
J
V
DS
≥ 5 V
V
GS
−2.0 V
−1.8 V
6
4
−1.6 V
−1.4 V
T = 25°C
J
2
0
2
0
−1.2 V
−1.0 V
T = 125°C
J
T = −55°C
J
0
1
2
3
4
5
0
0.5
1
1.5
2
2.5
3
−V , DRAIN−TO−SOURCE VOLTAGE (VOLTS)
DS
−V , GATE−TO−SOURCE VOLTAGE (VOLTS)
GS
Figure 12. On−Region Characteristics
Figure 13. Transfer Characteristics
0.12
0.1
0.32
0.28
0.24
0.20
0.16
0.12
V
GS
= −4.5 V
T = 25°C
J
T = 125°C
J
V
GS
= −1.8 V
0.08
0.06
T = 25°C
J
V
GS
= −2.5 V
0.08
0.04
0
T = −55°C
J
0.04
0.02
V
GS
= −4.5 V
2.0
4.0
6.0
8.0
1.5
2.5
3.5
4.5
5.5
6.5
7.5
−I , DRAIN CURRENT (AMPS)
D
−I , DRAIN CURRENT (AMPS)
D
Figure 14. On−Resistance versus Drain
Figure 15. On−Resistance versus Drain
Current
Current and Gate Voltage
100000
1.75
1.5
V
GS
= 0 V
I
V
= −2 A
D
= −4.5 V
GS
10000
1000
100
1.25
T = 150°C
J
1.0
0.75
0.5
T = 125°C
J
−50
−25
0
25
50
75
100 125
150
0
4
8
12
16
20
T , JUNCTION TEMPERATURE (°C)
J
−V , DRAIN−TO−SOURCE VOLTAGE (VOLTS)
DS
Figure 16. On−Resistance Variation with
Figure 17. Drain−to−Source Leakage Current
Temperature
versus Voltage
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NTLJD3183CZ
P−CHANNEL PERFORMANCE CURVES (T = 25°C unless otherwise noted)
J
600
400
5
T = 25°C
J
QT
V
GS
= 0 V
4
3
2
C
iss
V
GS
Q
Q
GS
GD
200
0
1
0
C
oss
I
= −3.8 A
D
T = 25°C
J
C
rss
0
5
10
15
20
0
1
2
3
4
5
6
DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Q , TOTAL GATE CHARGE (nC)
G
Figure 18. Capacitance Variation
Figure 19. Gate−To−Source and
Drain−To−Source
Voltage versus Total Charge
2
1000
100
V
I
= −5.0 V
= −2.0 A
= −4.5 V
V
GS
= 0 V
DD
T = 25°C
J
D
V
GS
1.5
1
t
d(off)
t
f
t
r
10
1
t
d(on)
0.5
0
1
10
100
0
0.2
0.4
0.6
0.8
1.0
R , GATE RESISTANCE (OHMS)
G
−V , SOURCE−TO−DRAIN VOLTAGE (VOLTS)
SD
Figure 20. Resistive Switching Time
Variation versus Gate Resistance
Figure 21. Diode Forward Voltage versus Current
100
10
100 ms
1 ms
10 ms
1
V
GS
= 20 V
SINGLE PULSE
= 25°C
T
C
0.1
dc
R
DS(on)
LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.01
0.1
1
10
100
−V , DRAIN−TO−SOURCE VOLTAGE (VOLTS)
DS
Figure 22. Maximum Rated Forward Biased
Safe Operating Area
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NTLJD3183CZ
TYPICAL PERFORMANCE CURVES (T = 25°C unless otherwise noted)
J
1000
100
D = 0.5
0.2
0.1
*See Note 2 on Page 1
10
P
(pk)
0.05
0.02
0.01
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
1
t
1
T
− T = P
R (t)
q
JA
J(pk)
A
(pk)
t
2
SINGLE PULSE
0.00001 0.0001
DUTY CYCLE, D = t /t
1
2
0.1
0.000001
0.001
0.01
t, TIME (s)
0.1
1
10
100
1000
Figure 23. Thermal Response
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NTLJD3183CZ
PACKAGE DIMENSIONS
WDFN6, 2x2
CASE 506AN−01
ISSUE D
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION b APPLIES TO PLATED
TERMINAL AND IS MEASURED BETWEEN
0.15 AND 0.30 mm FROM THE TERMINAL TIP.
4. COPLANARITY APPLIES TO THE EXPOSED
PAD AS WELL AS THE TERMINALS.
D
A
B
EXPOSED Cu
MOLD CMPD
PLATING
DETAIL B
PIN ONE
REFERENCE
OPTIONAL
MILLIMETERS
E
CONSTRUCTIONS
DIM
A
MIN
0.70
0.00
MAX
0.80
0.05
A1
A3
b
0.10
C
0.20 REF
0.25
0.35
L
L
D
2.00 BSC
0.10
C
D2
E
0.57
2.00 BSC
0.67
1.10
TOP VIEW
L1
E2
e
0.90
0.65 BSC
0.15 BSC
0.25 REF
DETAIL A
A3
DETAIL B
F
0.10
0.08
C
C
OPTIONAL
K
CONSTRUCTIONS
L
0.20
---
0.30
0.10
A
L1
NOTE 4
A1
SEATING
PLANE
SOLDERMASK DEFINED
MOUNTING FOOTPRINT
C
SIDE VIEW
1.74
0.10
D2
C
A
B
2X
0.77
D2
F
L
1
3
1.10
6X
0.47
DETAIL A
2.30
E2
0.10
C
A
B
PACKAGE
OUTLINE
6
4
K
6X b
1
0.10
0.05
C
C
A
B
e
0.65
PITCH
NOTE 3
6X
0.35
DIMENSIONS: MILLIMETERS
BOTTOM VIEW
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
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LITERATURE FULFILLMENT:
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For additional information, please contact your local
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NTLJD3183CZ/D
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