NTLJF1103PT1G [ONSEMI]
TRANSISTOR POWER, FET, FET General Purpose Power;
| 型号： | NTLJF1103PT1G |
| 厂家： | 
ONSEMI |
| 描述： | TRANSISTOR POWER, FET, FET General Purpose Power |
| 文件： | 总4页 (文件大小：71K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NTLJF1103P
Product Preview
Power MOSFET and
Schottky Diode
−8 V, −4.3 A, mCoolꢀ P−Channel, with
2.0 A Schottky Barrier Diode, 2x2 mm,
WDFN Package
http://onsemi.com
MOSFET
V
R
Max
I Max (Note 1)
D
(BR)DSS
DS(on)
Features
90 mW @ −4.5 V
120 mW @ −2.5 V
• WDFN 2x2 mm Package with Exposed Drain Pad for
Excellent Thermal Conduction
• Footprint Same as SC−88 Package
−8 V
−4.3 A
150 mW @ −1.8 V
170 mW @ −1.5 V
• 1.5 V V Rated R
)
GS
DS(on
• Low V , 2 A Schottky Diode
F
SCHOTTKY DIODE
• Low Profile (< 0.8 mm) for Easy Fit in Thin Environment
V
R
Max
V Typ
F
I Max
F
• This is a Pb−Free Device
20 V
0.37 V
2.0 A
Applications
• DC−DC Buck Converter
D
A
K
• Low Voltage Hard Disk DC Power Source
MOSFET MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Parameter
Drain−to−Source Voltage
Symbol Value Unit
G
V
−8
6
V
V
A
DSS
Gate−to−Source Voltage
V
GS
S
Continuous Drain Current
(Note 1)
I
D
T = 25°C
A
−3.5
−2.5
−4.3
1.5
Steady
State
P−CHANNEL MOSFET
SCHOTTKY DIODE
T = 85°C
A
t ≤ 5 s T = 25°C
MARKING
DIAGRAM
A
Power Dissipation
(Note 1)
P
W
Steady
State
D
T = 25°C
A
1
1
2
3
6
5
4
t ≤ 5 s
2.3
−2.4
−1.7
0.7
JG M G
WDFN6
G
Continuous Drain Current
(Note 2)
I
A
T = 25°C
A
CASE 506AN
D
T = 85°C
A
Steady
State
JG
M
G
= Specific Device Code
= Date Code
Power Dissipation
(Note 2)
P
W
D
T = 25°C
A
= Pb−Free Package
Pulsed Drain Current
t = 10 ms
p
I
−17
A
(Note: Microdot may be in either location)
DM
Operating Junction and Storage Temperature
T ,
−55 to
150
°C
J
PIN CONNECTIONS
K
T
STG
Source Current (Body Diode)
I
S
−1.9
TBD
A
A
N/C
D
K
G
S
Single Pulse Drain−to−Source AvalancheEnergy
E
AS
mJ
1
2
3
6
5
4
(VDD = V, VG = V, IPK = A, RG = W)
Lead Temperature for Soldering Purposes
T
L
260
°C
(1/8″ from case for 10 s)
D
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface Mounted on FR4 Board using 2 in sq pad size
(Top View)
(Cu area = 1.127 in sq [2 oz] including traces).
2. Surface Mounted on FR4 Board using the minimum recommended pad size.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
This document contains information on a product under development. ON Semiconductor
reserves the right to change or discontinue this product without notice.
© Semiconductor Components Industries, LLC, 2006
1
Publication Order Number:
April, 2006 − Rev. P0
NTLJF1103P/D
NTLJF1103P
SCHOTTKY DIODE MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Parameter
Peak Repetitive Reverse Voltage
DC Blocking Voltage
Symbol
Value
20
Unit
V
V
RRM
V
R
20
V
Average Rectified Forward Current
I
F
2.0
A
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
THERMAL RESISTANCE RATINGS
Parameter
Junction−to−Ambient – Steady State (Note 3)
Junction−to−Ambient – t ≤ 5 s (Note 3)
Symbol
Max
83
Unit
R
q
q
q
JA
JA
JA
R
R
54
°C/W
Junction−to−Ambient – Steady State Min Pad (Note 4)
177
3. Surface Mounted on FR4 Board using 2 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces).
4. Surface Mounted on FR4 Board using the minimum recommended pad size.
MOSFET ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
V
GS
= 0 V, I = −250 mA
−8
V
(BR)DSS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/T
J
I
D
= −250 mA, Ref to 25°C
TBD
mV/°C
(BR)DSS
Zero Gate Voltage Drain Current
I
mA
T = 25°C
−1
DSS
J
V
DS
= −6 V, V = 0 V
GS
T = 125°C
J
TBD
100
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
I
V
DS
= 0 V, V =
GS
5.0 V
nA
GSS
V
V
GS
= V , I = −250 mA
−0.4
TBD
TBD
−1.0
V
GS(TH)
DS
D
Gate Threshold
V
/T
J
mV/°C
GS(TH)
Temperature Coefficient
Drain−to−Source On−Resistance
R
mW
V
GS
= −4.5, I = −4.0 A
90
DS(on)
D
V
= −2.5, I = −3.5 A
120
150
170
GS
D
V
= 1.8, I = −3.0 A
D
GS
GS
V
= 1.5, I = −3.0 A
D
Forward Transconductance
g
FS
V
DS
= −6 V, I = −1.0 A
TBD
S
D
CHARGES, CAPACITANCES AND GATE RESISTANCE
pF
Input Capacitance
C
TBD
TBD
TBD
4
ISS
Output Capacitance
C
OSS
C
RSS
V
= 0 V, f = 1 MHz, V = −8 V
DS
GS
Reverse Transfer Capacitance
Total Gate Charge
nC
ns
Q
G(TOT)
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Q
TBD
1.5
G(TH)
V
= −4.5 V, V = −5 V, I = −2.5 A
DS D
GS
Q
GS
GD
Q
1.8
SWITCHING CHARACTERISTICS (Note 6)
Turn−On Delay Time
Rise Time
t
TBD
TBD
TBD
TBD
d(ON)
t
r
V
GS
= −4.5 V, V = −8 V,
DD
I
D
= −2.0 A, R = 2 W
G
Turn−Off Delay Time
Fall Time
t
d(OFF)
t
f
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
V
V
= 0 V, IS = −1.9 A
T = 25°C
TBD
TBD
−1.2
V
SD
GS
J
t
V
= 0 V, d /d = 100 A/ms,
RR
GS ISD t
ns
I = −1.9 A
S
5. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
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2
NTLJF1103P
SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Parameter
Symbol
Test Conditions
I = 0.1 A
Min
Typ
0..26
0.37
TBD
TBD
Max
TBD
TBD
TBD
TBD
Unit
Maximum Instantaneous
Forward Voltage
V
F
V
F
I = 1.0 A
F
Maximum Instantaneous
Reverse Current
I
R
V
= 20 V
= 10 V
mA
R
R
V
SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS (T = 85°C unless otherwise noted)
J
Parameter
Symbol
Test Conditions
I = 0.1 A
Min
Typ
TBD
TBD
TBD
TBD
Max
TBD
TBD
TBD
TBD
Unit
Maximum Instantaneous
Forward Voltage
V
F
V
F
I = 1.0 A
F
Maximum Instantaneous
Reverse Current
I
R
V
R
V
R
= 20 V
= 10 V
mA
SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS (T = 125°C unless otherwise noted)
J
Parameter
Symbol
Test Conditions
I = 0.1 A
Min
Typ
0.13
0.27
TBD
TBD
Max
TBD
TBD
TBD
TBD
Unit
Maximum Instantaneous
Forward Voltage
V
F
V
F
I = 1.0 A
F
Maximum Instantaneous
Reverse Current
I
R
V
R
V
R
= 20 V
= 10 V
mA
SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Capacitance
C
V
R
= 5.0 V, f = 1.0 MHz
TBD
pF
ORDERING INFORMATION
Device
†
Package
Shipping
NTLJF1103PT1G
WDFN6
(Pb−Free)
3000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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3
NTLJF1103P
PACKAGE DIMENSIONS
WDFN6 2x2
CASE 506AN−01
ISSUE B
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION b APPLIES TO PLATED
TERMINAL AND IS MEASURED BETWEEN
0.15 AND 0.20mm FROM TERMINAL.
4. COPLANARITY APPLIES TO THE EXPOSED
PAD AS WELL AS THE TERMINALS.
D
A
B
E
MILLIMETERS
PIN ONE
REFERENCE
DIM
A
MIN
0.70
0.00
MAX
0.80
0.05
A1
A3
b
0.20 REF
2X
0.10 C
0.25
0.35
D
2.00 BSC
D2
E
0.57
2.00 BSC
0.77
2X
0.10
C
E2
e
0.90
1.10
0.65 BSC
0.25 REF
0.20 0.30
0.15 REF
K
A3
L
0.10
C
J
A
6X
0.08
C
SOLDERING FOOTPRINT*
A1
D2
SEATING
PLANE
C
6X
2.30
D2
6X
0.35
0.43
4X
e
6X
L
1
3
1
0.65
PITCH
2XE2
6
4
0.25
6X
K
b
6X
0.10
0.05
C
C
A
B
6X J
2X
NOTE 3
BOTTOM VIEW
0.72
1.05
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy
and soldering details, please download the
ON Semiconductor Soldering and Mounting
Techniques Reference Manual, SOLDERRM/D.
mCool is a trademark of Semiconductor Components Industries, LLC (SCILLC).
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer
purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
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USA/Canada
ON Semiconductor Website: http://onsemi.com
Order Literature: http://www.onsemi.com/litorder
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2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051
Phone: 81−3−5773−3850
For additional information, please contact your
local Sales Representative.
NTLJF1103P/D
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