NTLJF3117PTAG [ONSEMI]
Power MOSFET and Schottky Diode −20 V, −4.1 A, P−Channel, with 2.0 A Schottky Barrier Diode, 2x2 mm, uCool Package; 功率MOSFET和肖特基二极管-20 V， -4.1 A， P沟道， 2.0肖特基势垒二极管， 2×2毫米， uCool套餐
| 型号： | NTLJF3117PTAG |
| 厂家： | 
ONSEMI |
| 描述： | Power MOSFET and Schottky Diode −20 V, −4.1 A, P−Channel, with 2.0 A Schottky Barrier Diode, 2x2 mm, uCool Package |
| 文件： | 总8页 (文件大小：92K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NTLJF3117P
Power MOSFET and
Schottky Diode
−20 V, −4.1 A, P−Channel, with 2.0 A
Schottky Barrier Diode, 2x2 mm,
mCool] Package
• FETKYt Configuration with MOSFET plus Low Vf Schottky Diode
• mCOOLt Package Provides Exposed Drain Pad for Excellent
Thermal Conduction
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MOSFET
Features
V
R
DS(on)
MAX
I MAX (Note 1)
D
(BR)DSS
100 mW @ −4.5 V
135 mW @ −2.5 V
200 mW @ −1.8 V
• 2x2 mm Footprint Same as SC−88 Package Design
−20 V
−4.1 A
• Independent Pinout Provides Circuit Design Flexibility
• Low Profile (< 0.8 mm) for Easy Fit in Thin Environment
• High Current Schottky Diode: 2 A Current Rating
SCHOTTKY DIODE
V
MAX
V
TYP
I MAX
F
• This is a Pb−Free Device
R
F
Applications
30 V
0.47 V
2.0 A
• Optimized for Portable Applications like Cell Phones, Digital
Cameras, Media Players, etc.
D
A
K
• DC−DC Buck Circuit
• Li−Ion Battery Applications
• Color Display and Camera Flash Regulators
G
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Parameter
Drain−to−Source Voltage
Symbol
Value
−20
8.0
Unit
V
S
V
DSS
P−CHANNEL MOSFET
SCHOTTKY DIODE
Gate−to−Source Voltage
V
V
GS
MARKING
DIAGRAM
Continuous Drain
Current (Note 1)
I
A
T = 25°C
−3.3
−2.4
−4.1
1.5
D
A
Steady
State
T = 85°C
A
1
2
3
6
5
4
1
t ≤ 5 s T = 25°C
A
JHMG
WDFN6
CASE 506AN
Power Dissipation
(Note 1)
P
W
Steady
State
D
D
G
T = 25°C
A
JH = Specific Device Code
t ≤ 5 s
2.3
M
G
= Date Code
= Pb−Free Package
Continuous Drain
Current (Note 2)
I
A
T = 25°C
A
−2.3
−1.6
0.71
D
T = 85°C
A
Steady
State
(Note: Microdot may be in either location)
Power Dissipation
(Note 2)
P
W
T = 25°C
A
PIN CONNECTIONS
K
Pulsed Drain Current
t = 10 ms
I
−20
A
p
DM
Operating Junction and Storage Temperature T , T
−55 to
150
°C
J
STG
A
N/C
D
K
G
S
1
2
3
6
5
4
Source Current (Body Diode) (Note 2)
I
−1.9
260
A
S
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
°C
L
D
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
(Top View)
1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq
[1 oz] including traces).
2. Surface Mounted on FR4 Board using the minimum recommended pad size
ORDERING INFORMATION
See detailed ordering and shipping information in the package
2
of 30 mm , 2 oz Cu.
dimensions section on page 7 of this data sheet.
©
Semiconductor Components Industries, LLC, 2006
1
Publication Order Number:
July, 2006 − Rev. 2
NTLJF3117P/D
NTLJF3117P
SCHOTTKY DIODE MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Parameter
Peak Repetitive Reverse Voltage
DC Blocking Voltage
Symbol
Value
30
Unit
V
V
RRM
V
30
V
R
Average Rectified Forward Current
I
2.0
A
F
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Max
83
Unit
Junction−to−Ambient – Steady State (Note 3)
Junction−to−Ambient – t ≤ 5 s (Note 3)
Junction−to−Ambient – Steady State Min Pad (Note 4)
R
q
JA
q
JA
q
JA
R
R
54
°C/W
177
3. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces).
2
4. Surface Mounted on FR4 Board using the minimum recommended pad size of 30 mm , 2 oz Cu.
MOSFET ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
V
= 0 V, I = −250 mA
−20
V
(BR)DSS
GS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/T
(BR)DSS
I
= −250 mA, Ref to 25°C
9.95
mV/°C
J
D
Zero Gate Voltage Drain Current
I
T = 25°C
−1.0
−10
100
mA
DSS
J
V
= −16 V, V = 0 V
GS
DS
T = 85°C
J
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
I
V
= 0 V, V =
GS
8.0 V
nA
GSS
DS
V
V
= V , I = −250 mA
−0.4
−0.7
2.44
−1.0
V
GS(TH)
GS
DS
D
Negative Threshold
Temperature Coefficient
V
/T
mV/°C
GS(TH)
J
Drain−to−Source On−Resistance
R
V
= −4.5, I = −2.0 A
75
100
135
200
mW
DS(on)
GS
GS
GS
D
V
= −2.5, I = −2.0 A
101
150
3.1
D
V
= −1.8, I = −1.6 A
D
Forward Transconductance
g
FS
V
= −5.0 V, I = −2.0 A
S
DS
D
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
C
531
91
pF
ISS
V
= 0 V, f = 1.0 MHz,
GS
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
C
OSS
C
RSS
V
= −10 V
DS
56
Q
5.5
0.7
1.0
1.4
8.8
6.2
nC
G(TOT)
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Gate Resistance
Q
G(TH)
V
= −4.5 V, V = −10 V,
DS
GS
Q
GS
GD
I
= −2.0 A
D
Q
R
W
G
SWITCHING CHARACTERISTICS (Note 6)
Turn−On Delay Time
t
5.2
ns
d(ON)
Rise Time
t
13.2
13.7
19.1
r
V
= −4.5 V, V = −5.0 V,
DD
GS
I
= −1.0 A, R = 6.0 W
D
G
Turn−Off Delay Time
Fall Time
t
d(OFF)
t
f
5. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
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2
NTLJF3117P
MOSFET ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
SWITCHING CHARACTERISTICS (Note 6)
Turn−On Delay Time
t
5.5
15
ns
d(ON)
Rise Time
t
r
V
= −4.5 V, V = −10 V,
DD
GS
I
= −2.0 A, R = 2.0 W
D
G
Turn−Off Delay Time
Fall Time
t
19.8
21.6
d(OFF)
t
f
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Recovery Voltage
V
T = 25°C
−0.75
−0.64
16.2
10.6
5.6
−1.0
SD
J
V
= 0 V, IS = −1.0 A
V
GS
T = 125°C
J
Reverse Recovery Time
Charge Time
t
RR
t
ns
a
V
= 0 V, d /d = 100 A/ms,
ISD t
GS
I = −1.0 A
S
Discharge Time
t
b
Reverse Recovery Time
Q
5.7
nC
RR
5. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Parameter
Symbol
Test Conditions
I = 0.1 A
Min
Typ
0.34
0.47
17
Max
0.39
0.53
20
Unit
Maximum Instantaneous
Forward Voltage
V
V
F
F
I = 1.0 A
F
Maximum Instantaneous
Reverse Current
I
V
V
V
= 30 V
= 20 V
= 10 V
mA
R
R
R
R
3.0
8.0
2.0
4.5
SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS (T = 85°C unless otherwise noted)
J
Parameter
Symbol
Test Conditions
I = 0.1 A
Min
Typ
0.22
0.40
0.22
0.11
0.06
Max
0.35
0.50
2.5
Unit
Maximum Instantaneous
Forward Voltage
V
V
F
F
I = 1.0 A
F
Maximum Instantaneous
Reverse Current
I
V
V
V
= 30 V
= 20 V
= 10 V
mA
R
R
R
R
1.6
1.2
SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS (T = 125°C unless otherwise noted)
J
Parameter
Symbol
Test Conditions
I = 0.1 A
Min
Typ
0.2
Max
0.29
0.47
20
Unit
Maximum Instantaneous
Forward Voltage
V
V
F
F
I = 1.0 A
F
0.4
Maximum Instantaneous
Reverse Current
I
V
V
V
= 30 V
= 20 V
= 10 V
2.0
mA
R
R
R
R
1.1
10.9
8.4
0.63
SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Capacitance
C
V
= 5.0 V, f = 1.0 MHz
38
pF
R
7. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces).
2
8. Surface−mounted on FR4 board using the minimum recommended pad size of 30 mm , 2 oz cu.
9. Pulse Test: pulse width v 300 ms, duty cycle v2%.
10.Switching characteristics are independent of operating junction temperatures.
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3
NTLJF3117P
TYPICAL PERFORMANCE CURVES (T = 25°C unless otherwise noted)
J
5
5
V
= −1.9 V to −6 V
T = 25°C
J
GS
V
≥ 10 V
DS
4.5
4
−1.8 V
4
3.5
3
−1.7 V
−1.6 V
3
2
2.5
2
−1.5 V
−1.4 V
T = 25°C
J
1.5
1
1
0
−1.3 V
−1.2 V
0.5
0
T = 125°C
J
T = −55°C
J
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
0
0.5
1
1.5
2
2.5
3
−V , DRAIN−TO−SOURCE VOLTAGE (VOLTS)
DS
−V , GATE−TO−SOURCE VOLTAGE (VOLTS)
GS
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
0.1
0.09
0.08
0.15
0.1
0.05
0
T = 25°C
J
V
= −4.5 V
GS
T = 100°C
J
V
V
= −2.5 V
= −4.5 V
GS
T = 25°C
J
GS
0.07
0.06
T = −55°C
J
0.05
0.04
1.0
1.5
2.0
2.5
1
2
3
4
5
−I , DRAIN CURRENT (AMPS)
D
−I , DRAIN CURRENT (AMPS)
D
Figure 3. On−Resistance versus Drain Current
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
1.6
1.4
1.2
1.0
10000
1000
100
I
V
= −2.2 A
V
= 0 V
D
GS
= −4.5 V
GS
T = 150°C
J
T = 100°C
J
0.8
0.6
10
2
−50
−25
0
25
50
75
100 125
150
4
6
8
10
12
14
16
18 20
T , JUNCTION TEMPERATURE (°C)
J
−V , DRAIN−TO−SOURCE VOLTAGE (VOLTS)
DS
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
versus Voltage
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4
NTLJF3117P
TYPICAL PERFORMANCE CURVES (T = 25°C unless otherwise noted)
J
1200
1000
800
5
20
16
12
8
V
= 0 V
V
= 0 V
GS
DS
T = 25°C
J
QT
4
3
2
C
iss
V
V
GS
DS
600
Q
Q
GS
GD
400
200
0
C
rss
1
0
4
0
C
oss
I
= −2.2 A
D
T = 25°C
J
5
0
5
10
15
20
0
1
2
3
4
5
6
V
V
DS
GS
Q , TOTAL GATE CHARGE (nC)
G
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 8. Gate−To−Source and Drain−To−Source
Voltage versus Total Charge
Figure 7. Capacitance Variation
1000
100
3
V
= −15 V
= −2.2 A
= −4.5 V
V
= 0 V
GS
DD
I
D
2.5
V
GS
2
1.5
1
t
f
t
r
t
10
1
d(off)
t
d(on)
0.5
0
T = 150°C
T = 25°C
J
J
1
10
100
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
R , GATE RESISTANCE (OHMS)
G
−V , SOURCE−TO−DRAIN VOLTAGE (VOLTS)
SD
Figure 9. Resistive Switching Time
Variation versus Gate Resistance
Figure 10. Diode Forward Voltage versus Current
100
T
= 25°C
C
T = 150°C
J
10 ms
SINGLE PULSE
10
100 ms
1 ms
1
0.1
10 ms
*See Note 2 on Page 1
LIMIT
R
DS(on)
dc
THERMAL LIMIT
PACKAGE LIMIT
0.01
0.1
1
10
100
−V , DRAIN−TO−SOURCE VOLTAGE (VOLTS)
DS
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
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5
NTLJF3117P
TYPICAL PERFORMANCE CURVES (T = 25°C unless otherwise noted)
J
1000
100
D = 0.5
0.2
0.1
*See Note 2 on Page 1
(t) = r(t) R
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
10
P
(pk)
R
q
JA
q
JA
0.05
0.02
0.01
1
READ TIME AT t
1
t
1
T
− T = P
R (t)
q
JA
J(pk)
A
(pk)
t
2
SINGLE PULSE
0.00001 0.0001
DUTY CYCLE, D = t /t
1
2
0.1
0.000001
0.001
0.01
t, TIME (s)
0.1
1
10
100
1000
Figure 12. Thermal Response
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6
NTLJF3117P
TYPICAL SCHOTTKY PERFORMANCE CURVES (T = 25°C unless otherwise noted)
J
10
1.0
0.1
10
T = 85°C
J
1.0
T = 125°C
J
T = 85°C
J
T = 25°C
J
T = 125°C
J
T = 25°C
T = −55°C
J
J
0.1
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
V , INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
F
V , MAXIMUM FORWARD VOLTAGE (VOLTS)
F
Figure 13. Typical Forward Voltage
Figure 14. Maximum Forward Voltage
1.0E+0
100E−3
1.0E+0
100E−3
T = 125°C
J
10E−3
1.0E−3
100E−6
10E−6
10E−3
1.0E−3
100E−6
10E−6
T = 125°C
J
T = 85°C
J
T = 85°C
J
T = 25°C
J
T = 25°C
J
1.0E−6
100E−9
1.0E−6
100E−9
0
10
20
30
0
10
20
30
V , REVERSE VOLTAGE (VOLTS)
R
V , REVERSE VOLTAGE (VOLTS)
R
Figure 15. Typical Reverse Current
Figure 16. Maximum Reverse Current
ORDERING INFORMATION
Device
†
Package
Shipping
NTLJF3117PT1G
WDFN6
(Pb−Free)
3000 / Tape & Reel
3000 / Tape & Reel
NTLJF3117PTAG
WDFN6
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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7
NTLJF3117P
PACKAGE DIMENSIONS
WDFN6 2x2
CASE 506AN−01
ISSUE C
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION b APPLIES TO PLATED
TERMINAL AND IS MEASURED BETWEEN
0.15 AND 0.20mm FROM TERMINAL.
4. COPLANARITY APPLIES TO THE EXPOSED
PAD AS WELL AS THE TERMINALS.
D
A
B
E
MILLIMETERS
PIN ONE
REFERENCE
DIM
A
MIN
0.70
0.00
MAX
0.80
0.05
A1
A3
b
0.20 REF
2X
0.10
C
0.25
0.35
D
2.00 BSC
D2
E
0.57
2.00 BSC
0.77
2X
0.10
C
E2
e
0.90
1.10
0.65 BSC
0.25 REF
0.20 0.30
0.15 REF
K
A3
L
0.10
C
J
A
SOLDERMASK DEFINED
MOUNTING FOOTPRINT
6X
0.08
C
A1
D2
SEATING
C
PLANE
6X
2.30
D2
6X
0.35
0.43
4X
e
6X
L
1
3
1
0.65
PITCH
2XE2
6
4
0.25
6X
K
b
6X
0.10
0.05
C
C
A
B
6X J
2X
NOTE 3
0.72
BOTTOM VIEW
1.05
DIMENSIONS: MILLIMETERS
FETKY is a registered trademark of International Rectifier Corporation.
mCool is a trademark of Semiconductor Components Industries, LLC (SCILLC).
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5773−3850
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
For additional information, please contact your local
Sales Representative
NTLJF3117P/D
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