NTLJS3D9N03CTAG [ONSEMI]
MOSFET，功率，30V，N 沟道，WDFN6;
| 型号： | NTLJS3D9N03CTAG |
| 厂家： | 
ONSEMI |
| 描述： | MOSFET，功率，30V，N 沟道，WDFN6 开关 光电二极管 晶体管 |
| 文件： | 总6页 (文件大小：332K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MOSFET - Power, Single
N-Channel, WDFN6
30 V, 4.9 - 18.9 mW, 17.2 A
NTLJS3D9N03C
Features
2
• Small Footprint (4 mm ) for Compact Design
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• Low R
to Minimize Conduction Losses
• These Devices are Pb−Free, Halogen−Free/BFR−Free and are RoHS
DS(on)
Compliant
V
R
MAX
I MAX
D
(BR)DSS
DS(on)
Applications
4.9 mW @ 4.5 V
6.8 mW @ 3.3 V
10 mW @ 2.5 V
18.9 mW @ 1.8 V
• Wireless Chargers
• Power Load Switch
• Power Management and Protection
• Battery Management
30 V
17.2 A
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
ELECTRICAL CONNECTION
Parameter
Drain−to−Source Voltage
Symbol
Value
30
Unit
V
D
V
DSS
Gate−to−Source Voltage
V
GS
12
V
Continuous Drain Cur- Steady
T = 25°C
I
17.2
12.4
2.40
A
A
D
rent R
(Notes 1, 3)
State
q
JA
T = 85°C
A
G
Power Dissipation
(Notes 1, 3)
T = 25°C
A
P
W
A
D
R
q
JA
S
Continuous Drain Cur- Steady
rent R (Notes 2, 3)
State
T = 25°C
A
I
D
10.3
7.4
N−CHANNEL MOSFET
q
JA
T = 85°C
A
Power Dissipation
(Notes 2, 3)
T = 25°C
A
P
D
0.86
W
MARKING
DIAGRAM
R
q
JA
Pulsed Drain Current
T = 25°C, t = 10 ms
I
DM
71
A
A
p
YWZZ
A3D9
Operating Junction and Storage Temperature
Range
T , T
−55 to
+150
°C
J
stg
WDFN6 (2.05x2.05)
CASE 483AV
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
L
260
°C
YW = Date Code
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
ZZ = Assembly Lot Code
= Assembly Site Code
A
A3D9 = Specific Device Code
THERMAL RESISTANCE MAXIMUM RATINGS (Note 1)
Parameter
Symbol
Value
52
Unit
ORDERING INFORMATION
Junction−to−Ambient − Steady State (Note 1)
R
°C/W
q
JA
See detailed ordering, marking and shipping information in the
package dimensions section on page 4 of this data sheet.
Junction−to−Ambient − Steady State (Note 2)
R
145
q
JA
2
1. Surface−mounted on FR4 board using 1 in pad size, 2 oz. Cu pad.
2. Surface−mounted on FR4 board using minimum pad size, 2 oz. Cu pad.
3. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted. Actual
continuous current will be limited by thermal & electro−mechanical application
board design. R
is determined by the user’s board design.
q
CA
© Semiconductor Components Industries, LLC, 2019
1
Publication Order Number:
March, 2020 − Rev. 0
NTLJS3D9N03C/D
NTLJS3D9N03C
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
V
GS
= 0 V, I = 250 mA
30
V
(BR)DSS
D
Drain−to−Source Breakdown
Voltage Temperature Coefficient
V
/
24.5
mV/°C
(BR)DSS
I
D
= 250 mA, ref to 25°C
T
J
Zero Gate Voltage Drain Current
I
T = 25°C
1
mA
DSS
J
V
= 0 V,
GS
DS
V
= 24 V
T = 125°C
J
10
100
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
I
V
= 0 V, V
=
12 V
nA
GSS
DS
GS
GS
V
V
= V , I = 250 mA
0.6
1.1
V
GS(TH)
DS
D
Threshold Temperature Coefficient
Drain−to−Source On Resistance
V
R
/T
I
= 250 mA, ref to 25°C
−3.83
3.6
mV/°C
mW
GS
J
D
V
= 4.5 V, I = 10 A
4.9
6.8
10
DS(on)
GS
D
V
= 3.3 V, I = 5 A
4.1
GS
GS
GS
D
V
= 2.5 V, I = 4 A
5.4
D
V
= 1.8 V, I = 2 A
9.8
18.9
D
Forward Transconductance
Gate Resistance
g
V
DS
= 5 V, I = 10 A
69
S
FS
D
R
T = 25°C
A
1.65
W
G
CHARGES AND CAPACITANCES
Input Capacitance
C
1565
677
pF
iss
V
GS
= 0 V, V = 15 V,
DS
Output Capacitance
C
oss
f = 1.0 MHz
Reverse Transfer Capacitance
Total Gate Charge
C
54.8
14.7
1.17
2.31
3.29
rss
Q
nC
nC
G(TOT)
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Q
G(TH)
V
GS
= 4.5 V, V = 15 V,
DS
I
= 10 A
D
Q
GS
GD
Q
SWITCHING CHARACTERISTICS, V = 4.5 V (Note 5)
GS
Turn−On Delay Time
Rise Time
t
10.1
9.5
ns
d(on)
t
r
V
GS
I
= 4.5 V, V = 15 V,
DD
= 10 A, R = 6 W
D
G
Turn−Off Delay Time
Fall Time
t
40.6
15.4
d(off)
t
f
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
T = 25°C
0.75
0.611
31.7
11.2
1.2
V
SD
J
V
= 0 V,
GS
S
I
= 10 A
T = 125°C
J
Reverse Recovery Time
t
ns
RR
V
GS
= 0 V, dl /dt = 100 A/ms,
S
I
S
= 10 A
Reverse Recovery Charge
Q
nC
RR
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
5. Switching characteristics are independent of operating junction temperatures.
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2
NTLJS3D9N03C
TYPICAL CHARACTERISTICS
100
90
80
70
60
50
40
30
20
100
V
GS
= 4.5 V to 1.8 V
90
80
70
60
50
40
30
20
1.6 V
T = 25°C
J
10
0
10
0
T = 125°C
J
T = −55°C
J
0
1
2
3
4
5
0
1
2
3
4
5
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
40
20
T = 25°C
D
18
16
14
T = 25°C
J
J
35
30
I
= 10 A
25
20
12
10
8
V
V
V
= 2.5 V
= 3.3 V
= 4.5 V
GS
GS
GS
15
10
6
4
5
0
2
0
0
1
2
3
4
5
6
7
8
9
10
0
10
20 30 40 50
60 70 80 90 100
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 3. On−Resistance vs. Gate−to−Source
Figure 4. On−Resistance vs. Drain Current and
Voltage (V)
Gate Voltage
2.0
1.8
1.6
1.4
1.2
1.0
0.8
100K
10K
1K
V
= 4.5 V
= 10 A
GS
T = 150°C
J
I
D
T = 125°C
J
T = 85°C
J
100
10
T = 25°C
J
1
0.6
0.4
0.1
−50 −25
0
25
50
75
100
125 150
5
9
13
17
21
25
29
T , JUNCTION TEMPERATURE (°C)
J
V
, DRAIN−TO−SOURCE VOLTAGE (V)
DS
Figure 5. On−Resistance Variation with
Figure 6. Drain−to−Source Leakage Current
Temperature
vs. Voltage
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3
NTLJS3D9N03C
TYPICAL CHARACTERISTICS
10K
1K
10
V
= 15 V
DS
9
8
7
6
5
4
3
2
C
I = 10 A
ISS
D
T = 25°C
J
C
OSS
100
C
RSS
Q
GS
Q
GD
10
1
f = 1 MHz
= 0 V
T = 25°C
J
V
GS
1
0
0
5
10
15
20
25
0
5
10
15
20
25
30
35
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Q , TOTAL GATE CHARGE (nC)
G
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source vs. Total Charge
10
1K
V
V
= 4.5 V
= 15 V
V
GS
= 0 V
GS
DS
I
D
= 10 A
t
d(off)
t
f
100
t
r
t
d(on)
10
1
T = 125°C T = 25°C
T = −55°C
J
J
J
1
0.3
0.4
0.5
, SOURCE−TO−DRAIN VOLTAGE (V)
SD
0.6
0.7
0.8
0.9
1.0
1
10
R , GATE RESISTANCE (W)
100
V
G
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
DEVICE ORDERING INFORMATION
Device
†
Package
Shipping
NTLJS3D9N03CTAG
WDFN6
(Pb−Free)
3000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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4
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
WDFN6 2.05X2.05, 0.65P
CASE 483AV
ISSUE A
DATE 02 APR 2019
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13671G
WDFN6 2.05X2.05, 0.65P
PAGE 1 OF 1
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