NTMFD4902NFT3G [ONSEMI]
Dual N-Channel Power MOSFET;
| 型号： | NTMFD4902NFT3G |
| 厂家： | 
ONSEMI |
| 描述： | Dual N-Channel Power MOSFET 开关 脉冲 光电二极管 晶体管 |
| 文件： | 总10页 (文件大小：109K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NTMFD4902NF
Dual N-Channel Power
MOSFET with Integrated
Schottky
30 V, High Side 18 A / Low Side 23 A, Dual
N−Channel SO8FL
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V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
Features
6.5 mW @ 10 V
10 mW @ 4.5 V
4.1 mW @ 10 V
6.2 mW @ 4.5 V
Q1 Top FET
30 V
• Co−Packaged Power Stage Solution to Minimize Board Space
• Low Side MOSFET with Integrated Schottky
• Minimized Parasitic Inductances
• Optimized Devices to Reduce Power Losses
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
18 A
23 A
Q2 Bottom
FET
30 V
D1
(2, 3, 4, 9)
Applications
• DC−DC Converters
• System Voltage Rails
• Point of Load
(1) G1
S1/D2 (10)
(8) G2
S2 (5, 6, 7)
PIN CONNECTIONS
D1 4
5 S2
6 S2
7 S2
8 G2
D1 3
D1 2
G1 1
9
D1
10
S1/D2
(Bottom View)
MARKING
DIAGRAM
1
4902NF
AYWZZ
DFN8
CASE 506BX
1
4902NF = Specific Device Code
A
Y
= Assembly Location
= Year
W
ZZ
= Work Week
= Lot Traceability
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2015
1
Publication Order Number:
September, 2015 − Rev. 5
NTMFD4902NF/D
NTMFD4902NF
MAXIMUM RATINGS (T = 25°C unless otherwise stated)
J
Parameter
Symbol
Value
Unit
Drain−to−Source Voltage
Drain−to−Source Voltage
Gate−to−Source Voltage
Gate−to−Source Voltage
Q1
Q2
Q1
Q2
Q1
V
30
V
DSS
V
20
V
GS
Continuous Drain Current R
(Note 1)
T = 25°C
I
D
13.5
9.7
q
JA
A
T = 85°C
A
A
T = 25°C
A
Q2
17.5
12.6
1.90
1.99
18.2
13.1
23
T = 85°C
A
Power Dissipation
RqJA (Note 1)
T = 25°C
A
Q1
Q2
Q1
P
W
D
D
D
Continuous Drain Current R
≤ 10 s (Note 1)
T = 25°C
A
I
D
q
JA
T = 85°C
A
A
T = 25°C
A
Q2
Steady
State
T = 85°C
A
16.6
3.45
3.45
10.3
7.4
Power Dissipation
≤ 10 s (Note 1)
T = 25°C
A
Q1
Q2
Q1
P
I
W
R
q
JA
Continuous Drain Current
(Note 2)
T = 25°C
A
D
R
q
JA
T = 85°C
A
A
T = 25°C
A
Q2
13.3
9.6
T = 85°C
A
Power Dissipation
(Note 2)
T = 25 °C
A
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
P
1.10
1.16
60
W
A
R
q
JA
Pulsed Drain Current
TA = 25°C
tp = 10 ms
I
DM
80
Operating Junction and Storage Temperature
Source Current (Body Diode)
Drain to Source dV/dt
T , T
J
−55 to +150
°C
A
STG
I
S
3.4
4.9
dV/dt
EAS
EAS
6.0
V/ns
mJ
Single Pulse Drain−to−Source Avalanche Energy (T = 25C,
24 A
27 A
Q1
Q2
28.8
36.5
260
J
V
DD
= 50 V, V = 10 V, I = XX A , L = 0.1 mH, R = 25 W)
GS L pk G
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
T
°C
L
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Surface−mounted on FR4 board using 1 sq−in pad, 2 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size of 100 mm .
2
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2
NTMFD4902NF
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
FET
Q1
Q2
Q1
Q2
Q1
Q2
Symbol
Value
65.9
62.8
113.2
108
Unit
Junction−to−Ambient – Steady State (Note 3)
R
q
q
q
JA
JA
JA
Junction−to−Ambient – Steady State (Note 4)
R
R
°C/W
Junction−to−Ambient – (t ≤ 10 s) (Note 3)
36.2
36.2
3. Surface−mounted on FR4 board using 1 sq−in pad, 2 oz Cu.
4. Surface−mounted on FR4 board using the minimum recommended pad size of 100 mm .
2
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
FET
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Break-
down Voltage
Q1
Q2
Q1
Q2
Q1
V
30
30
V
V
V
= 0 V, I = 250 mA
(BR)DSS
GS
D
= 0 V, I = 1.0 mA
GS
D
Drain−to−Source Break-
down Voltage Temperature
Coefficient
V
18
15
mV /
°C
(BR)DSS
/ T
J
Zero Gate Voltage Drain
Current
I
V
V
= 0 V,
= 24 V
T = 25°C
J
1
mA
DSS
GS
DS
T = 125°C
J
10
Q2
V
V
= 0 V,
= 24 V
T = 25°C
J
500
GS
DS
Gate−to−Source Leakage
Current
Q1
Q2
I
V
= 0 V, VDS = 20 V
100
100
nA
V
GSS
GS
GS
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Q1
V
V
= VDS, I = 250 mA
1.2
1.2
2.2
2.2
GS(TH)
D
Q2
Q1
Q2
Q1
Negative Threshold Temper-
ature Coefficient
V
/
4.5
4.0
5.2
8.0
3.3
5.0
28
mV /
°C
GS(TH)
T
J
Drain−to−Source On Resist-
ance
R
V
= 10 V
= 4.5 V
= 10 V
= 4.5 V
I
D
I
D
I
D
I
D
= 10 A
= 10 A
= 15 A
= 15 A
6.5
10
DS(on)
GS
V
GS
mW
Q2
V
4.1
6.2
GS
GS
V
Forward Transconductance
Q1
Q2
g
V
= 1.5 V, I = 10 A
S
FS
DS
D
35
CHARGES, CAPACITANCES & GATE RESISTANCE
Q1
1150
1590
360
813
105
83
Input Capacitance
Output Capacitance
Reverse Capacitance
C
ISS
Q2
Q1
Q2
Q1
Q2
C
OSS
C
RSS
V
GS
= 0 V, f = 1 MHz, V = 15 V
pF
DS
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
5. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%.
6. Switching characteristics are independent of operating junction temperatures.
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3
NTMFD4902NF
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
FET
Symbol
Test Condition
Min
Typ
Max
Unit
CHARGES, CAPACITANCES & GATE RESISTANCE
Q1
9.7
11.5
1.1
Total Gate Charge
Q
G(TOT)
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Total Gate Charge
Q
G(TH)
1.4
V
= 4.5 V, V = 15 V; I = 10 A
nC
nC
GS
DS
D
3.3
Q
GS
GD
4.2
3.7
Q
3.4
19.1
24.9
Q
V
= 10 V, V = 15 V; I = 10 A
GS DS D
G(TOT)
SWITCHING CHARACTERISTICS (Note 6)
Q1
9.0
10.5
15
Turn−On Delay Time
Rise Time
t
d(ON)
Q2
Q1
Q2
Q1
Q2
Q1
Q2
t
r
15.2
14
V
= 4.5 V, V = 15 V,
DS
GS
ns
I
D
= 10 A, R = 3.0 W
G
Turn−Off Delay Time
Fall Time
t
d(OFF)
17.7
4.0
t
f
4.7
SWITCHING CHARACTERISTICS (Note 6)
Q1
6.0
7.0
14
Turn−On Delay Time
Rise Time
t
d(ON)
Q2
Q1
Q2
Q1
Q2
Q1
Q2
t
r
14
V
= 10 V, V = 15 V,
DS
GS
ns
I
D
= 10 A, R = 3.0 W
G
17
Turn−Off Delay Time
Fall Time
t
d(OFF)
22
3.0
3.3
t
f
DRAIN−SOURCE DIODE CHARACTERISTICS
T = 25°C
0.75
0.62
0.37
0.31
1.0
J
V
I
= 0 V,
= 3 A
GS
S
Q1
T = 125°C
J
Forward Voltage
V
SD
V
T = 25°C
J
0.70
V
GS
= 0 V,
= 2 A
Q2
I
S
T = 125°C
J
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
5. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%.
6. Switching characteristics are independent of operating junction temperatures.
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4
NTMFD4902NF
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
FET
Symbol
Test Condition
Min
Typ
Max
Unit
DRAIN−SOURCE DIODE CHARACTERISTICS
Q1
23
24.5
12
Reverse Recovery Time
Charge Time
t
RR
Q2
Q1
Q2
Q1
Q2
Q1
Q2
ta
ns
13
V
GS
= 0 V, d /d = 100 A/ms, I = 3 A
IS t S
11
Discharge Time
tb
11.5
12
Reverse Recovery Charge
Q
nC
RR
24
PACKAGE PARASITIC VALUES
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
0.38
0.65
0.054
0.007
1.5
Source Inductance
Drain Inductance
Gate Inductance
Gate Resistance
L
nH
nH
nH
W
S
D
G
L
T = 25°C
A
L
1.5
0.8
R
G
0.8
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
5. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%.
6. Switching characteristics are independent of operating junction temperatures.
ORDERING INFORMATION
†
Device
NTMFD4902NFT1G
Package
Shipping
DFN8
1500 / Tape & Reel
(Pb−Free)
NTMFD4902NFT3G
DFN8
(Pb−Free)
5000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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5
NTMFD4902NF
TYPICAL CHARACTERISTICS − Q1
40
35
30
25
20
15
10
5
50
3.8 V
3.6 V
3.4 V
3.2 V
V
DS
≥ 5 V
45
40
35
30
25
20
15
10
5
4.5 V
10 V
T = 25°C
J
T = 125°C
J
3.0 V
2.8 V
T = 25°C
J
T = −55°C
J
V
GS
= 2.4 V
0
0
0
1
2
3
4
5
0
1
2
3
4
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
0.020
0.018
0.016
0.014
0.012
0.010
0.008
0.006
0.010
0.009
0.008
0.007
I
= 10 A
D
T = 25°C
T = 25°C
J
V
V
= 4.5 V
= 10 V
GS
0.006
0.005
0.004
0.003
GS
0.004
0.002
2
3
4
5
6
7
8
9
10
0
5
10
15
20
25
30
35
40
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 3. On−Resistance vs. Gate−to−Source
Resistance
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
10,000
1,000
1.8
1.6
I
V
= 10 A
D
T = 150°C
J
= 10 V
GS
1.4
1.2
T = 125°C
J
1.0
0.8
0.6
100
10
V
= 0 V
GS
−50 −25
0
25
50
75
100 125
150
0
5
10
, DRAIN−TO−SOURCE VOLTAGE (V)
DS
15
20
25
30
T , JUNCTION TEMPERATURE (°C)
V
J
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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NTMFD4902NF
TYPICAL CHARACTERISTICS − Q1
1600
1400
1200
1000
800
11
QT
T = 25°C
GS
J
V
10
9
= 0 V
C
iss
8
7
6
5
C
oss
600
4
Qgs
Qgd
3
2
1
0
400
C
rss
I
= 10 A
200
0
D
T = 25°C
J
0
5
10
15
20
25
30
0
2
4
6
8
10
12 14 16 18 20
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Qg, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
10
9
1000
100
V
V
= 10 V
= 15 V
= 10 A
V
GS
= 0 V
GS
DD
8
I
D
t
d(off)
7
6
t
r
5
4
10
1
t
d(on)
3
T = 25°C
J
2
t
f
1
0
1
10
R , GATE RESISTANCE (W)
100
0.0 0.1
0.2 0.3
0.4 0.5 0.6 0.7 0.8 0.9
V
, SOURCE−TO−DRAIN VOLTAGE (V)
G
SD
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
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NTMFD4902NF
TYPICAL CHARACTERISTICS − Q2
50
45
40
35
30
25
20
15
10
5
60
3.4 V
3.2 V
T = 25°C
J
V
DS
≥ 5 V
3.0 V
2.8 V
50
40
30
20
4.5 V
10 V
T = 125°C
J
2.6 V
T = 25°C
J
10
0
2.4 V
T = −55°C
V
= 2.2 V
J
GS
0
0
1
2
3
4
5
0
0
0
0.5
1
1.5
2
2.5
3
3.5
V
, DRAIN−TO−SOURCE VOLTAGE (V)
V
, GATE−TO−SOURCE VOLTAGE (V)
DS
GS
Figure 11. On−Region Characteristics
Figure 12. Transfer Characteristics
0.020
0.015
0.007
0.006
I
D
= 15 A
T = 25°C
J
0.005
V
V
= 4.5 V
= 10 V
GS
0.004
0.003
0.002
0.001
0.010
0.005
0
GS
2
3
4
5
6
7
8
9
10
5
10 15 20 25 30 35 40
I , DRAIN CURRENT (A)
45 50
V
, GATE−TO−SOURCE VOLTAGE (V)
GS
D
Figure 13. On−Resistance vs. Gate−to−Source
Resistance
Figure 14. On−Resistance vs. Drain Current
and Gate Voltage
1.8
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1E−1
1E−2
1E−3
I
V
= 20 A
= 10 V
D
GS
T = 150°C
J
T = 125°C
J
V
GS
= 0 V
1.0
0.9
0.8
0.7
0.6
1E−4
1E−5
T = 25°C
J
−50 −25
0
25
50
75
100 125
150
5
10
15
20
25
30
T , JUNCTION TEMPERATURE (°C)
J
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 15. On−Resistance Variation with
Temperature
Figure 16. Drain−to−Source Leakage Current
vs. Voltage
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NTMFD4902NF
TYPICAL CHARACTERISTICS − Q2
2400
2000
11
QT
T = 25°C
GS
J
V
10
= 0 V
9
8
7
6
5
4
C
iss
1600
1200
800
C
oss
Qgd
Qgs
3
2
1
0
V
V
I
= 15 V
= 10 V
= 10 A
DD
GS
400
0
C
D
rss
T = 25°C
J
0
5
10
15
20
25
30
0
2
4
6
8
10 12 14 16 18 20 22 24 26
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Qg, TOTAL GATE CHARGE (nC)
Figure 17. Capacitance Variation
Figure 18. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
10
9
1000
100
V
V
= 10 V
= 15 V
= 10 A
V
= 0 V
GS
GS
DD
T = 25°C
J
8
I
D
t
d(off)
7
6
5
t
r
4
t
d(on)
10
1
3
2
t
f
1
0
0.0
1
10
R , GATE RESISTANCE (W)
100
0.1
0.2
, SOURCE−TO−DRAIN VOLTAGE (V)
SD
0.3
0.4
0.5
0.6
0.7
V
G
Figure 19. Resistive Switching Time Variation
vs. Gate Resistance
Figure 20. Diode Forward Voltage vs. Current
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NTMFD4902NF
PACKAGE DIMENSIONS
DFN8 5x6, 1.27P Dual Flag (SO8FL−Dual−Asymmetrical)
CASE 506BX
ISSUE D
NOTES:
2X
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
0.20
C
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED
BETWEEN 0.15 AND 0.25 MM FROM THE TERMINAL TIP.
4. COPLANARITY APPLIES TO THE EXPOSED PADS AS WELL AS THE
TERMINALS.
5. DIMENSIONS b AND L ARE MEASURED AT THE PACKAGE SUR-
FACE
6. DIMENSIONS D1 AND E1 DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
7. SEATING PLANE IS DEFINED BY THE TERMINALS. A1 IS DEFINED
AS THE DISTANCE FROM THE SEATING PLANE TO THE LOWEST
POINT ON THE PACKAGE BODY.
D
A
D1
B
E
2X
NOTE 6
0.20
C
8
7
6
5
4X
h
E1
PIN ONE
IDENTIFIER
MILLIMETERS
DIM
A
A1
b
b1
c
D
D1
D2
E
E1
E2
E3
e
MIN
0.90
0.00
0.41
0.41
0.23
5.00
4.50
3.50
6.00
5.50
2.27
0.82
MAX
1.10
0.05
0.61
0.61
0.33
5.30
5.10
4.22
6.30
6.10
2.67
1.22
c
A1
1
2
3
4
NOTE 7
TOP VIEW
0.10
0.10
C
DETAIL A
A
C
SEATING
PLANE
C
NOTE 4
1.27 BSC
SIDE VIEW
e
h
k
k1
k2
L
−−−
0.39
0.56
0.73
0.35
12
_
DETAIL A
0.59
0.76
0.93
0.55
DETAIL B
e/2
b
8X
1
4
E3
RECOMMENDED
SOLDERING FOOTPRINT*
0.10
0.05
C
C
A B
NOTE 3
k
5.35
8X
0.69
PACKAGE
OUTLINE
k1
8X
E2
0.10
REF
0.64
6X b1
NOTE 3
DETAIL B
8
5
k2
8X
L
1.97
2.33
D2
BOTTOM VIEW
2.68
6.45
0.69
1.22
1.27
PITCH
4X
DIMENSION: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and the
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed
at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation
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NTMFD4902NF/D
相关型号：
NTMFD4C86NT3G
Power MOSFET 30V 20A High Side 32A Low Side 5.6mOhm Dual N-Channel SO-8FL, DFN8 5x6, 1.27P PowerPhase FET, 5000-REEL
ONSEMI
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