NTMFS005N10MCLT1G [ONSEMI]
Single N-Channel Power MOSFET 100V, 105A, 5.1 mΩ;
| 型号： | NTMFS005N10MCLT1G |
| 厂家： | 
ONSEMI |
| 描述： | Single N-Channel Power MOSFET 100V, 105A, 5.1 mΩ |
| 文件： | 总7页 (文件大小：191K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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www.onsemi.com
onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or
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regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdonsemi and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
MOSFET – Power, Single
N-Channel
100 V, 5.1 mW, 105 A
NTMFS005N10MCL
Features
• Small Footprint (5x6 mm) for Compact Design
www.onsemi.com
• Low R
to Minimize Conduction Losses
DS(on)
• Low Q and Capacitance to Minimize Driver Losses
G
• These Devices are Pb−Free, Halogen Free/BFR Free, Beryllium Free
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
and are RoHS Compliant
5.1 mW @ 10 V
7.1 mW @ 4.5 V
100 V
105 A
Typical Applications
• Synchronous Rectification
• AC−DC and DC−DC Power Supplies
• AC−DC Adapters (USB PD) SR
• Load Switch
D (5,6)
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
G (4)
Parameter
Drain−to−Source Voltage
Symbol
Value
100
20
Unit
V
V
DSS
S (1,2,3)
N−CHANNEL MOSFET
Gate−to−Source Voltage
V
GS
V
Continuous Drain
T
= 25°C
I
105
A
C
D
Current R
(Note 1)
q
JC
Steady
State
Power Dissipation
(Note 1)
P
125
16
W
A
D
MARKING
DIAGRAM
R
q
JC
Continuous Drain
Current R
T = 25°C
A
I
D
D
1
q
JA
S
S
S
G
D
D
Steady
State
(Notes 1, 2)
DFN5
(SO−8FL)
CASE 488AA
STYLE 1
005L10
AYWZZ
Power Dissipation
P
3
W
D
R
(Notes 1, 2)
q
JA
D
Pulsed Drain Current
T = 25°C, t = 100 ms
I
DM
470
A
A
p
Operating Junction and Storage Temperature
Range
T , T
−55 to
+175
°C
A
Y
= Assembly Location
= Year
J
stg
W
ZZ
= Work Week
= Lot Traceability
Source Current (Body Diode)
I
104
177
A
S
Single Pulse Drain−to−Source Avalanche
E
AS
mJ
Energy (L = 1 mH, I
= 18.8 A)
L(pk)
Lead Temperature Soldering Reflow for Solder-
ing Purposes (1/8″ from case for 10 s)
T
L
260
°C
ORDERING INFORMATION
Device
NTMFS005N10MCLT1G
Package
Shipping†
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
DFN5
1500 /
(Pb−Free) Tape & Reel
THERMAL RESISTANCE RATINGS
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Parameter
Symbol
Value
1.2
Unit
Junction−to−Case − Steady State (Note 1)
Junction−to−Ambient − Steady State (Note 2)
R
R
°C/W
q
JC
JA
50
q
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2
2. Surface−mounted on FR4 board using 1 in pad size, 1 oz. Cu pad.
© Semiconductor Components Industries, LLC, 2020
1
Publication Order Number:
July, 2021 − Rev. 1
NTMFS005N10MCL/D
NTMFS005N10MCL
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
V
GS
= 0 V, I = 250 mA
100
V
(BR)DSS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/
I
D
= 250 mA, ref to 25°C
52
mV/°C
(BR)DSS
T
J
Zero Gate Voltage Drain Current
I
V
DS
= 0 V,
T = 25°C
1
mA
DSS
GS
J
V
= 100 V
T = 125°C
J
100
100
Gate−to−Source Leakage Current
ON CHARACTERISTICS
I
V
= 0 V, V = 20 V
nA
GSS
DS
GS
GS
Gate Threshold Voltage
V
V
= V , I = 192 mA
1
3
V
GS(TH)
DS
D
Threshold Temperature Coefficient
Drain−to−Source On Resistance
V
/T
I = 250 mA, ref to 25°C
D
−5.6
4.2
mV/°C
mW
GS(TH)
J
R
V
GS
GS
= 10 V, I = 34 A
5.1
7.1
DS(on)
D
V
= 4.5 V, I = 27 A
5.6
D
Forward Transconductance
Gate−Resistance
g
V
DS
= 10 V, I = 50 A
155
0.85
S
FS
D
R
T = 25°C
A
W
G
CHARGES & CAPACITANCES
Input Capacitance
C
V
= 0 V, f = 1 MHz, V = 50 V
4100
1350
22
pF
ISS
GS
DS
Output Capacitance
C
OSS
RSS
Reverse Transfer Capacitance
Total Gate Charge
C
Q
V
GS
= 4.5 V, V = 50 V, I = 34 A
26
nC
nC
G(TOT)
G(TOT)
DS
D
Total Gate Charge
Q
V
GS
= 10 V, V = 50 V, I = 34 A
55
DS
D
Gate−to−Source Charge
Gate−to−Drain Charge
Plateau Voltage
Q
Q
11
GS
GD
GP
5
V
3
V
Output Charge
Q
V
GS
= 0 V, V = 50 V
87
nC
OSS
DD
SWITCHING CHARACTERISTICS (Note 3)
Turn−On Delay Time
t
V
= 10 V, V = 50 V,
17
6.7
57
ns
d(ON)
GS
D
DS
I
= 34 A, R = 6 W
G
Rise Time
t
r
Turn−Off Delay Time
t
d(OFF)
Fall Time
t
f
12.3
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
V
S
= 0 V,
T = 25°C
0.85
0.73
56
1.3
V
SD
GS
J
I
= 34 A
T = 125°C
J
Reverse Recovery Time
Reverse Recovery Charge
Charge Time
t
V
= 0 V, dI /dt = 100 A/ms,
ns
nC
ns
ns
RR
GS
S
I
S
= 17 A
Q
54
RR
t
25
a
Discharge Time
t
b
31
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Switching characteristics are independent of operating junction temperatures
www.onsemi.com
2
NTMFS005N10MCL
TYPICAL CHARACTERISTICS
100
80
100
V
= 10 to 3.2 V
GS
V
DS
= 10 V
3.0 V
2.8 V
80
60
40
60
T = 25°C
J
40
2.6 V
2.4 V
20
0
20
0
T = 150°C
J
T = −55°C
J
0
1
2
3
4
0
1
2
3
4
5
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
18
16
14
12
10
8
7
6
T = 25°C
J
T = 25°C
D
J
I
= 34 A
V
= 4.5 V
= 10 V
GS
5
4
V
GS
6
4
3
2
2
0
1
2
3
4
5
6
7
8
9
10
10
15
20
25
30
35
40
45
50
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 3. On−Resistance vs. Gate−to−Source
Figure 4. On−Resistance vs. Drain Current and
Voltage
Gate Voltage
100
10
1
2.5
2.0
1.5
T = 175°C
V
= 10 V
= 34 A
J
GS
I
D
T = 150°C
J
T = 125°C
J
T = 85°C
J
0.1
T = 25°C
J
1.0
0.5
0.01
0.001
−50 −25
0
25
50
75
100 125 150 175
10 20
30
40
50
60
70
80
90 100
T , JUNCTION TEMPERATURE (°C)
J
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Figure 6. Drain−to−Source Leakage Current
Temperature
vs. Voltage
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3
NTMFS005N10MCL
TYPICAL CHARACTERISTICS
10K
1K
10
C
iss
9
8
7
6
5
4
3
2
C
oss
100
Q
GD
Q
GS
C
rss
10
1
V
I
= 50 V
= 34 A
V
= 0 V
DS
GS
T = 25°C
D
J
1
0
T = 25°C
J
f = 1 MHz
0
10 20 30 40 50 60 70 80
, DRAIN−TO−SOURCE VOLTAGE (V)
90 100
0
10
20
30
40
50
60
V
DS
Q , TOTAL GATE CHARGE (nC)
G
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source vs. Total Charge
1000
100
V
GS
= 0 V
t
t
d(off)
10
d(on)
10
1
t
t
f
V
= 10 V
= 50 V
= 34 A
r
GS
V
DS
I
D
T = 125°C
T = 25°C
T = −55°C
J
J
J
1
0.4
0.5
0.6
0.7
0.8
0.9
1.0
5
50
R , GATE RESISTANCE (W)
G
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
100
1000
100
10
10 ms
T (initial) = 25°C
J
100 ms
10
T
V
= 25°C
C
T (initial) = 125°C
J
≤ 10 V
GS
Single Pulse
0.5 ms
1 ms
10 ms
1
R
Limit
DS(on)
Thermal Limit
Package Limit
100 ms
& 1 s
1
0.1
0.1
1
10
100
0.000001
0.00001 0.0001
0.001
0.01
0.1
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
TIME IN AVALANCHE (sec)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Drain Current vs. Time in
Avalanche
www.onsemi.com
4
NTMFS005N10MCL
TYPICAL CHARACTERISTICS
10
1
50% Duty Cycle
20%
10%
5%
0.1
2%
1%
0.01
Single Pulse
0.001
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
t, PULSE TIME (sec)
Figure 13. Thermal Response
www.onsemi.com
5
NTMFS005N10MCL
PACKAGE DIMENSIONS
DFN5 5x6, 1.27P
(SO−8FL)
CASE 488AA
ISSUE N
2 X
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
0.20
C
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
BURRS.
D
A
2
B
E
2 X
D1
MILLIMETERS
0.20
C
DIM
A
A1
b
c
D
D1
D2
E
E1
E2
e
G
K
L
L1
M
MIN
0.90
0.00
0.33
0.23
5.00
4.70
3.80
6.00
5.70
3.45
NOM
1.00
−−−
0.41
0.28
5.15
4.90
4.00
6.15
MAX
1.10
0.05
0.51
0.33
5.30
5.10
4.20
6.30
6.10
3.85
4 X
q
E1
2
c
A1
5.90
3.65
1
2
3
4
1.27 BSC
0.575
1.35
0.575
0.125 REF
3.40
0.51
1.20
0.51
0.71
1.50
0.71
TOP VIEW
C
SEATING
PLANE
DETAIL A
0.10
0.10
C
C
3.00
0
3.80
12
q
−−−
A
_
_
STYLE 1:
PIN 1. SOURCE
2. SOURCE
3. SOURCE
4. GATE
RECOMMENDED
SIDE VIEW
DETAIL A
SOLDERING FOOTPRINT*
2X
5. DRAIN
0.495
4.560
8X b
A B
2X
0.10
0.05
C
c
e/2
e
1.530
L
2X
0.475
1
4
3.200
1.330
K
4.530
E2
PIN 5
(EXPOSED PAD)
M
2X
0.905
L1
1
D2
BOTTOM VIEW
0.965
G
4X
1.000
4X
1.270
PITCH
DIMENSIONS: MILLIMETERS
0.750
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
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