NTMFS08N2D5C [ONSEMI]
N 沟道，屏蔽门极，PowerTrench® MOSFET，80V，166A，2.7mΩ;
| 型号： | NTMFS08N2D5C |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道，屏蔽门极，PowerTrench® MOSFET，80V，166A，2.7mΩ |
| 文件： | 总8页 (文件大小：391K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NTMFS08N2D5C
MOSFET – Power Trench,
N‐Channel, Shielded Gate
80 V, 166 A, 2.7 mW
General Description
www.onsemi.com
This N-Channel MV MOSFET is produced using
ON Semiconductor’s advanced PowerTrench process that incorporates
Shielded Gate technology. This process has been optimized to
minimize on-state resistance and yet maintain superior switching
performance with best in class soft body diode.
V
R
MAX
I MAX
D
DS
DS(ON)
80 V
2.7 mW @ 10 V
8 mW @ 6 V
166 A
Features
• Shielded Gate MOSFET Technology
• Max R
• Max R
= 2.7 mW at V = 10 V, I = 68 A
S (1, 2, 3)
DS(on)
GS
D
= 8 mW at V = 6 V, I = 34 A
DS(on)
GS
D
• 50% Lower Qrr than Other MOSFET Suppliers
• Lowers Switching Noise/EMI
• MSL1 Robust Package Design
• 100% UIL Tested
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
G (4)
D (5, 6, 7, 8)
N-CHANNEL MOSFET
Applications
Pin 1
• Primary DC−DC MOSFET
• Synchronous Rectifier in DC−DC and AC−DC
• Motor Drive
• Solar
Top
Bottom
Power 56
(PQFN8)
CASE 483AF
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
A
Symbol
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current:
Value
80
Unit
V
V
DS
V
GS
MARKING DIAGRAM
20
V
S
S
D
D
I
D
A
Continuous, T = 25°C (Note 5)
166
105
24
C
$Y&Z&3&K
NTMFS
08N2D5C
Continuous, T = 100°C (Note 5)
C
Continuous, T = 25°C (Note 1a)
A
S
D
D
Pulsed (Note 4)
823
G
E
Single Pulse Avalanche Energy
(Note 3)
600
mJ
W
AS
$Y
= ON Semiconductor Logo
= Assembly Plant Code
= Numeric Date Code
= Lot Code
P
Power Dissipation:
D
&Z
&3
&K
T
A
= 25°C
138
2.7
C
T = 25°C (Note 1a)
NTMFS08N2D5C = Specific Device Code
T , T
Operating and Storage Junction
Temperature Range
−55 to +150
°C
J
STG
ORDERING INFORMATION
See detailed ordering and shipping information on page 3 of
this data sheet.
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
© Semiconductor Components Industries, LLC, 2017
1
Publication Order Number:
May, 2019 − Rev. 2
NTMFS08N2D5C/D
NTMFS08N2D5C
THERMAL CHARACTERISTICS
Symbol
Parameter
Value
0.9
Unit
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient (Note 1a)
°C/W
R
q
JC
JA
R
45
q
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Symbol
Parameter
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
BV
Drain to Source Breakdown Voltage
I
I
= 250 mA, V = 0 V
80
V
DSS
D
GS
DBV
Breakdown Voltage Temperature
Coefficient
= 250 mA, referenced to 25°C
62
mV/°C
DSS
D
/DT
J
DSS
GSS
I
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
V
V
= 64 V, V = 0 V
1
mA
DS
GS
I
=
20 V, V = 0 V
100
nA
GS
DS
ON CHARACTERISTICS
V
Gate to Source Threshold Voltage
V
I
= V , I = 380 mA
2.0
2.9
4.0
V
GS(th)
GS
DS
D
DV
/DT
Gate to Source Threshold Voltage
Temperature Coefficient
= 380 mA, referenced to 25°C
−8.3
mV/°C
GS(th)
J
D
r
Static Drain to Source On Resistance
Forward Transconductance
V
GS
V
GS
V
GS
V
DS
= 10 V, I = 68 A
2.2
3.3
3.7
148
2.7
8
mW
DS(on)
D
= 6 V, I = 34 A
D
= 10 V, I = 68 A, T = 125°C
5.4
D
J
g
FS
= 5 V, I = 68 A
S
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
DS
= 40 V, V = 0 V, f = 1 MHz
4455
1480
59
7500
2485
105
pF
pF
pF
W
iss
GS
C
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
oss
C
rss
R
0.8
1.6
g
SWITCHING CHARACTERISTICS
t
Turn-On Delay Time
Rise Time
V
= 40 V, I = 68 A, V = 10 V,
GEN
21
11
29
7
34
20
ns
ns
ns
ns
nC
d(on)
DD
D
GS
R
= 6 W
t
r
t
Turn-Off Delay Time
Fall Time
47
d(off)
t
f
13
Q
Total Gate Charge
V
= 0 V to 10 V, V = 40 V,
60
100
g
GS
DD
I
= 68 A
D
V
D
= 0 V to 6 V, V = 40 V,
38
65
nC
GS
DD
I
= 68 A
Q
Gate to Source Charge
Gate to Drain “Miller” Charge
Output Charge
V
DD
V
DD
V
DD
V
DS
= 40 V, I = 68 A
19
12
84
51
nC
nC
nC
nC
gs
D
Q
= 40 V, I = 68 A
D
gd
Q
= 40 V, V = 0 V
GS
oss
Q
Total Gate Charge Sync
= 0 V, I = 68 A
D
sync
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2
NTMFS08N2D5C
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (continued)
J
Symbol
Parameter
Test Condition
Min
Typ
Max
Unit
DRAIN-SOURCE DIODE CHARACTERISTICS
V
Source to Drain Diode Forward Voltage
V
V
= 0 V, I = 2.2 A (Note 2)
0.7
0.8
30
1.2
1.3
48
V
SD
GS
S
= 0 V, I = 68 A (Note 2)
GS
S
t
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Time
Reverse Recovery Charge
I = 34 A, di/dt = 300 A/ms
F
ns
nC
ns
rr
Q
55
88
rr
t
I = 34 A, di/dt = 1000 A/ms
F
24
39
rr
Q
139
222
nC
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2
1. R
is determined with the device mounted on a 1 in pad 2 oz copper pad on a 1.5 × 1.5 in. board of FR−4 material. R
is determined
CA
q
q
JA
by the user’s board design.
NOTES:
a) 45°C/W when mounted on
b) 115°C/W when mounted on
a minimum pad of 2 oz copper.
2
a 1 in pad of 2 oz copper.
2. Pulse Test: Pulse Width < 300 ms, Duty cycle < 2.0%.
3. E of 600 mJ is based on starting T = 25°C; N-ch: L = 3 mH, I = 20 A, V = 80 V, V = 10 V. 100% test at L = 0.1 mH, I = 63 A.
AS
J
AS
DD
GS
AS
4. Pulsed Id please refer to Figure 11 SOA graph for more details.
5. Computed continuous current limited to Max Junction Temperature only, actual continuous current will be limited by thermal &
electro-mechanical application board design.
ORDERING INFORMATION
Device
Marking
Package
Reel Size
Tape Width
Quantity
NTMFS08N2D5C
NTMFS08N2D5C
Power 56 (PQFN8)
(Pb-Free / Halogen Free)
13″
12 mm
3000
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3
NTMFS08N2D5C
TYPICAL CHARACTERISTICS
(T = 25°C unless otherwise noted)
J
300
250
200
150
100
50
6
5
4
3
2
VGS = 10 V
VGS = 7 V
GS = 6 V
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
V
GS = 4.5 V
V
VGS = 5 V
VGS = 5.5 V
VGS = 5.5 V
VGS = 6 V
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
V
GS = 5 V
1
0
VGS = 10 V
VGS = 7 V
VGS = 4.5 V
2
0
0
1
3
4
5
0
50
100
150
200
250
300
, DRAIN CURRENT (A)
ID
, DRAIN TO SOURCE VOLTAGE (V)
VDS
Figure 1. On Region Characteristics
Figure 2. Normalized On-Resistance vs. Drain
Current and Gate Voltage
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
20
PULSE DURATION = 80ms
DUTY CYCLE = 0.5% MAX
ID = 68 A
VGS = 10 V
ID = 68 A
15
10
TJ = 125 o
C
5
0
TJ = 25 o
C
−75 −50 −25
0
25 50
75 100 125 150
4
5
6
7
8
9
10
, GATE TO SOURCE VOLTAGE (V)
VGS
, JUNCTION TEMPERATURE (5C)
TJ
Figure 3. Normalized On-Resistance vs.
Junction Temperature
Figure 4. On-Resistance vs. Gate to Source
Voltage
300
250
200
150
100
50
300
VGS = 0 V
100
PULSE DURATION = 80ms
DUTY CYCLE = 0.5% MAX
VDS = 5 V
10
TJ = 150 o
C
1
0.1
TJ = 150 o
C
T
J = 25 o
C
TJ = 25 o
C
0.01
0.001
TJ = −55oC
T
J = −55oC
0
2
3
4
5
6
7
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VGS, GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode Forward
Voltage vs. Source Current
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4
NTMFS08N2D5C
TYPICAL CHARACTERISTICS
(T = 25°C unless otherwise noted)
J
10
8
10000
1000
100
ID = 68 A
Ciss
VDD = 30 V
Coss
VDD = 40 V
VDD = 50 V
6
4
Crss
10
2
f = 1 MHz
VGS = 0 V
0
1
0
10
20
30
40
50
60
70
0.1
1
10
80
VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs. Drain to Source Voltage
100
10
1
180
R
qJC = 0.9 oC/W
150
120
90
60
30
0
VGS = 10 V
TJ = 25 o
C
TJ = 100 o
C
VGS = 6 V
TJ = 125 oC
0.001 0.01
0.1
1
10
100
1000
25
50
TC
75
100
125
150
tAV, TIME IN AVALANCHE (ms)
, CASE TEMPERATURE (5C)
Figure 9. Unclamped Inductive
Switching Capability
Figure 10. Maximum Continuous Drain Current
vs. Case Temperature
1000
100
10
100000
SINGLE PULSE
R
TC = 25 oC
qJC = 0.9 oC/W
10 ms
10000
1000
100
100 ms
THIS AREA IS
LIMITED BY rDS(on)
1 ms
SINGLE PULSE
1
TJ = MAX RATED
10 ms
R
qJC = 0.9 oC/W
CURVE BENT TO
MEASURED DATA
100 ms/DC
TC = 25 oC
0.1
10
10−5
10−4
10−3
t, PULSE WIDTH (sec)
10−2
10−1
1
0.1
1
10
100 500
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe Operating Area
Figure 12. Single Pulse Maximum Power
Dissipation
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5
NTMFS08N2D5C
TYPICAL CHARACTERISTICS
(T = 25°C unless otherwise noted)
J
2
1
DUTY CYCLE−DESCENDING ORDER
D = 0.5
0.2
P
DM
0.1
0.1
0.01
0.05
0.02
0.01
t
1
t
2
NOTES:
SINGLE PULSE
Z
(t) = r(t) x R
o
qJC
qJC
R
= 0.9 C/W
qJC
Peak T = P
x Z (t) + T
J
DM
qJC C
Duty Cycle, D = t / t
1
2
0.001
10−5
10−4
10−3
10−2
10−1
1
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Junction-to-Case Transient Thermal Response Curve
POWERTRENCH is registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other
countries.
www.onsemi.com
6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
PQFN8 5X6, 1.27P
CASE 483AF
ISSUE A
DATE 06 JUL 2021
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13656G
PQFN8 5X6, 1.27P
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
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and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
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