NTMFS1D15N03CGT1G [ONSEMI]
MOSFET，功率 30V N 沟道，SO8FL;
| 型号： | NTMFS1D15N03CGT1G |
| 厂家： | 
ONSEMI |
| 描述： | MOSFET，功率 30V N 沟道，SO8FL |
| 文件： | 总7页 (文件大小：222K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MOSFET - Power, Single
N-Channel, SO8-FL
30 V, 1.15 mW, 245 A
NTMFS1D15N03CG
Features
• Advanced Package (5x6 mm) with Excellent Thermal Conduction
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• Ultra Low R
to Improve System Efficiency
DS(on)
• These Devices are Pb−Free and are RoHS Compliant
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
Typical Applications
30 V
1.15 mW @ 10 V
245 A
• Hot Swap Application
• Power Load Switch
• Battery Management and Protection
D (5)
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Parameter
Drain−to−Source Voltage
Symbol
Value
30
Unit
V
V
DSS
G (4)
Gate−to−Source Voltage
V
GS
20
V
Continuous Drain
Current R
T
= 25°C
= 100°C
= 25°C
I
245
173
124
A
C
D
S (1,2,3)
N−CHANNEL MOSFET
q
JC
T
C
Steady
State
(Note 2)
Power Dissipation
T
C
P
W
A
D
R
(Note 2)
q
JC
Continuous Drain
Current R
T = 25°C
A
I
D
43
30
MARKING
DIAGRAM
q
JA
T = 100°C
A
Steady
State
(Notes 1, 2)
D
1
Power Dissipation
T = 25°C
A
P
3.8
W
D
S
S
S
G
D
D
R
(Notes 1, 2)
q
JA
DFN5
(SO−8FL)
CASE 488AA
STYLE 1
1D15NG
AYWZZ
Pulsed Drain Current
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche
T = 25°C, t = 10 ms
I
DM
900
112
354
A
A
A
p
I
S
D
E
AS
mJ
1D15NG= Specific Device Code
Energy (I = 23.2 A)
L(pk)
A
Y
W
ZZ
= Assembly Location
= Year
= Work Week
= Lot Traceability
Operating Junction and Storage Temperature
T , T
−55 to
+ 175
°C
°C
J
stg
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
260
L
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
ORDERING INFORMATION
See detailed ordering, marking and shipping information on
page 5 of this data sheet.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Value
1.2
Unit
Junction−to−Case − Steady State (Note 1)
Junction−to−Ambient − Steady State (Note 1)
R
°C/W
q
JC
R
40
q
JA
2
1. Surface−mounted on FR4 board using a 1 in , 2 oz. Cu pad.
2. The entire application environment impacts the thermal resistance values shown.
They are not constants and are only valid for the particular conditions noted. Actual
continuous current will be limited by thermal & electro−mechanical application
board design. R
is determined by the user’s board design.
q
CA
© Semiconductor Components Industries, LLC, 2019
1
Publication Order Number:
April, 2021 − Rev. 6
NTMFS1D15N03CG/D
NTMFS1D15N03CG
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
V
GS
= 0 V, I = 250 mA
30
V
(BR)DSS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/
I
D
= 250 mA, ref to 25°C
14
(BR)DSS
mV/°C
T
J
Zero Gate Voltage Drain Current
I
V
= 0 V,
T = 25°C
1.0
100
100
DSS
GS
DS
J
V
= 30 V
mA
T = 125°C
J
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
Threshold Temperature Coefficient
Drain−to−Source On Resistance
Forward Transconductance
Gate Resistance
I
V
= 0 V, V = 20 V
nA
GSS
DS
GS
GS
V
V
= V , I = 160 mA
1.3
2.2
V
GS(TH)
DS
D
V
/T
J
I = 160 mA, ref to 25°C
D
−4.7
0.92
61
mV/°C
mW
GS(TH)
R
V
= 10 V, I = 20 A
1.15
DS(on)
GS
D
g
FS
V
= 3 V, I = 20 A
DS D
R
T = 25°C
A
1.7
W
G
CHARGES & CAPACITANCES
Input Capacitance
C
7300
3600
99
ISS
Output Capacitance
C
V
GS
= 0 V, V = 15 V, f = 1 MHz
pF
OSS
RSS
DS
Reverse Transfer Capacitance
Total Gate Charge
C
Q
94
G(TOT)
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Q
11
G(TH)
V
GS
= 10 V, V = 15 V; I = 20 A
nC
DS
D
Q
19
GS
Q
6.9
GD
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time
t
18
13
72
15
d(ON)
Rise Time
t
r
V
= 10 V, V = 15 V,
DS
GS
D
ns
V
I
= 20 A, R = 3 W
G
Turn−Off Delay Time
t
d(OFF)
Fall Time
t
f
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
T = 25°C
0.75
0.60
77
1.2
SD
J
V
S
= 0 V,
GS
I
= 10 A
T = 125°C
J
Reverse Recovery Time
t
ns
RR
V
= 0 V, V = 15 V, I = 20 A,
DS S
GS
dI /dt = 100 A/ms
S
Reverse Recovery Charge
Q
102
nC
RR
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
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2
NTMFS1D15N03CG
TYPICAL CHARACTERISTICS
350
300
250
200
150
100
350
V
GS
= 10 V to 6 V
V
DS
= 3 V
5.5 V
300
250
200
150
100
5.0 V
4.5 V
T = 25°C
J
4.0 V
3.5 V
3.0 V
2.5 V
50
0
50
0
T = 125°C
J
T = −55°C
J
0
0.5
1.0
1.5
2.0
2.5
3.0
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
8.0
6.0
4.0
2.0
8.0
6.0
T = 25°C
T = 25°C
D
J
J
I
= 20 A
4.0
2.0
0
V
GS
= 10 V
0
2
3
4
5
6
7
8
9
10
0
20 40 60 80 100 120 140 160 180 200
I , DRAIN CURRENT (A)
V
GS
, GATE VOLTAGE (V)
D
Figure 3. On−Resistance vs. Gate−to−Source
Figure 4. On−Resistance vs. Drain Current and
Voltage
Gate Voltage
2.0
1.E−04
1.E−05
V
I
= 10 V
= 20 A
GS
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
T = 175°C
J
D
T = 150°C
J
T = 125°C
J
1.E−06
1.E−07
T = 85°C
J
1.E−08
1.E−09
T = 25°C
J
−50 −25
0
25
50
75 100 125 150 175
5
10
15
20
25
30
T , JUNCTION TEMPERATURE (°C)
J
V
, DRAIN−TO−SOURCE VOLTAGE (V)
DS
Figure 5. On−Resistance Variation with
Figure 6. Drain−to−Source Leakage Current
Temperature
vs. Voltage
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3
NTMFS1D15N03CG
TYPICAL CHARACTERISTICS
100,000
10,000
10
9
8
C
ISS
7
6
5
4
3
2
C
OSS
1000
Q
Q
GD
GS
100
10
C
RSS
V
= 0 V
V
I
= 15 V
= 20 A
GS
DS
T = 25°C
J
D
1
0
f = 1 MHz
T = 25°C
J
0
5
10
15
20
25
30
0
10 20 30 40 50 60 70 80 90 100
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Q , TOTAL GATE CHARGE (nC)
G
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
10
8
1000
V
V
I
= 10 V
= 15 V
= 20 A
GS
V
GS
= 0 V
DS
t
d(off)
D
100
10
1
t
f
6
t
d(on)
4
t
r
2
T = 125°C
T = 25°C
T = −55°C
J
J
J
0
0.3
1
10
R , GATE RESISTANCE (W)
100
0.4
0.5
0.6
0.7
0.8
0.9
1
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
G
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
100
1000
100
10 ms
100 ms
T
= 25°C
J(initial)
1 ms
T
= 100°C
J(initial)
10
10
10 ms
Curve is based on
10% de−rating from
typical failure points
T
= 25°C
C
100 ms
Single Pulse
≤ 10 V
V
GS
1
R
Limit
DS(on)
Thermal Limit
Package Limit
0.1
1
0.1
1
10
100
0.00001
0.0001
0.001
0.01
V
DS
(V)
TIME IN AVALANCHE (s)
Figure 11. Safe Operating Area
Figure 12. IPEAK vs. Time in Avalanche
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4
NTMFS1D15N03CG
TYPICAL CHARACTERISTICS
10
1
50% Duty Cycle
20%
10%
5%
0.1
2%
1%
0.01
Single Pulse
0.001
0.000001
0.00001
0.0001
0.001
PULSE TIME (sec)
0.01
0.1
1
Figure 13. Thermal Impedance
DEVICE ORDERING INFORMATION
Device
†
Marking
Package
DFN5
Shipping
NTMFS1D15N03CGT1G
1D15NG
1500 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
DFN5 5x6, 1.27P
(SO−8FL)
CASE 488AA
ISSUE N
1
SCALE 2:1
2 X
DATE 25 JUN 2018
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
0.20
C
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
BURRS.
D
A
2
B
E
2 X
D1
MILLIMETERS
0.20
C
DIM
A
A1
b
c
D
D1
D2
E
E1
E2
e
G
K
L
L1
M
MIN
0.90
0.00
0.33
0.23
5.00
4.70
3.80
6.00
5.70
3.45
NOM
1.00
−−−
0.41
0.28
5.15
4.90
4.00
6.15
MAX
1.10
0.05
0.51
0.33
5.30
5.10
4.20
6.30
6.10
3.85
4 X
q
E1
2
c
A1
5.90
3.65
1
2
3
4
1.27 BSC
0.575
1.35
0.575
0.125 REF
3.40
0.51
1.20
0.51
0.71
1.50
0.71
TOP VIEW
C
SEATING
DETAIL A
PLANE
0.10
0.10
C
C
3.00
0
3.80
q
−−−
12
A
_
_
GENERIC
SIDE VIEW
MARKING DIAGRAM*
DETAIL A
1
8X b
A B
XXXXXX
AYWZZ
0.10
0.05
C
c
e/2
e
L
1
4
XXXXXX = Specific Device Code
A
Y
= Assembly Location
= Year
K
RECOMMENDED
SOLDERING FOOTPRINT*
W
ZZ
= Work Week
= Lot Traceability
E2
2X
PIN 5
M
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present. Some products
may not follow the Generic Marking.
(EXPOSED PAD)
L1
0.495
4.560
2X
1.530
D2
G
2X
BOTTOM VIEW
0.475
3.200
1.330
4.530
STYLE 1:
STYLE 2:
PIN 1. ANODE
2. ANODE
2X
0.905
PIN 1. SOURCE
2. SOURCE
3. SOURCE
4. GATE
1
3. ANODE
4. NO CONNECT
5. CATHODE
0.965
5. DRAIN
4X
1.000
1.270
PITCH
DIMENSIONS: MILLIMETERS
4X
0.750
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON14036D
DFN5 5x6, 1.27P (SO−8FL)
PAGE 1 OF 1
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