NTMFS4923NET3G [ONSEMI]
Power MOSFET 30V 91A 3.3 mOhm Single N-Channel Thermally Enhanced SO-8FL;
| 型号： | NTMFS4923NET3G |
| 厂家： | 
ONSEMI |
| 描述： | Power MOSFET 30V 91A 3.3 mOhm Single N-Channel Thermally Enhanced SO-8FL 开关 光电二极管 晶体管 |
| 文件： | 总8页 (文件大小：200K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NTMFS4923NE
Power MOSFET
30 V, 91 A, Single N−Channel, SO−8 FL
Features
• Low R
to Minimize Conduction Losses
DS(on)
• Low Capacitance to Minimize Driver Losses
• Optimized Gate Charge to Minimize Switching Losses
• Dual Sided Cooling Capability
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V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
• These Devices are Pb−Free, Halogen Free and are RoHS Compliant
3.3 mW @ 10 V
4.8 mW @ 4.5 V
91 A
75 A
Applications
• CPU Power Delivery, DC−DC Converters
30 V
MAXIMUM RATINGS (T = 25°C unless otherwise stated)
J
D (5,6)
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
Symbol
Value
30
Unit
V
V
DSS
V
GS
20
V
G (4)
Continuous Drain
Current R
T = 25°C
I
21.4
A
A
D
q
JA
T = 100°C
A
13.5
2.63
(Note 1)
S (1,2,3)
N−CHANNEL MOSFET
Power Dissipation
T = 25°C
A
P
W
A
D
R
(Note 1)
q
JA
Continuous Drain
Current R
T = 25°C
A
I
D
38.8
24.5
8.7
≤
q
JA
T = 100°C
A
MARKING
DIAGRAM
10 s (Note 1)
Power Dissipation
T = 25°C
A
P
I
W
A
D
R
≤ 10 s
q
JA
D
Steady
State
(Note 1)
1
S
S
S
G
D
D
Continuous Drain
Current R
T = 25°C
A
12.7
8.0
4923NE
AYWZZ
D
SO−8 FLAT LEAD
CASE 488AA
STYLE 1
q
JA
T = 100°C
A
(Note 2)
Power Dissipation
T = 25°C
A
P
0.93
W
A
D
D
R
(Note 2)
q
JA
Continuous Drain
Current R
T
C
T
C
T
C
= 25°C
= 85°C
= 25°C
I
D
91
66
48
A
Y
W
ZZ
= Assembly Location
= Year
= Work Week
= Lot Traceability
q
JC
(Note 1)
Power Dissipation
P
W
A
D
R
(Note 1)
q
JC
Pulsed Drain
Current
T = 25°C, t = 10 ms
I
DM
275
100
A
p
ORDERING INFORMATION
Current Limited by Package
T = 25°C
A
I
A
Dmax
Operating Junction and Storage
Temperature
T ,
STG
−40 to
+150
°C
J
†
Device
Package
Shipping
T
NTMFS4923NET1G
SO−8 FL
(Pb−Free)
1500 /
Tape & Reel
Source Current (Body Diode)
Drain to Source DV/DT
I
44
6
A
S
dV/d
V/ns
mJ
t
NTMFS4923NET3G
SO−8 FL
(Pb−Free)
5000 /
Tape & Reel
Single Pulse Drain−to−Source Avalanche
Energy T = 25°C, V = 24 V, V = 10 V,
E
AS
110
J
DD
GS
I = 47 A , L = 0.1 mH, R = 25 W
L
pk
G
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
260
°C
L
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
© Semiconductor Components Industries, LLC, 2012
1
Publication Order Number:
May, 2012 − Rev. 1
NTMFS4923NE/D
NTMFS4923NE
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Value
2.6
Unit
Junction−to−Case (Drain)
R
q
JC
Junction−to−Ambient – Steady State (Note 3)
Junction−to−Ambient – Steady State (Note 4)
Junction−to−Ambient – (t ≤ 10 s) (Note 3)
Junction−to−To p
R
47.5
134.8
14.4
8.3
q
JA
R
°C/W
q
JA
R
q
JA
R
q
JT
3. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
4. Surface−mounted on FR4 board using the minimum recommended pad size.
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
OFF CHARACTERISTICS
Symbol
Test Condition
Min
Typ
Max
Unit
Drain−to−Source Breakdown Voltage
V
V
GS
= 0 V, I = 250 mA
30
V
(BR)DSS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/
15
(BR)DSS
mV/°C
T
J
Zero Gate Voltage Drain Current
I
V
= 0 V,
= 24 V
T = 25°C
1.0
10
DSS
GS
DS
J
V
mA
T = 125°C
J
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
I
V
= 0 V, V
=
GS
20 V
100
nA
GSS
DS
V
V
= V , I = 250 mA
1.2
1.63
4.0
2.7
2.7
3.7
3.7
32
2.0
3.3
4.8
V
GS(TH)
GS
DS
D
Negative Threshold Temperature Coefficient
Drain−to−Source On Resistance
V
/T
J
mV/°C
GS(TH)
R
V
= 10 V
I
D
I
D
I
D
I
D
= 30 A
= 15 A
= 30 A
= 15 A
DS(on)
GS
GS
mW
V
= 4.5 V
Forward Transconductance
g
FS
V
= 1.5 V, I = 15 A
S
DS
D
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
C
3579
1264
39
4850
1710
59
ISS
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
C
OSS
C
RSS
V
GS
= 0 V, f = 1 MHz, V = 15 V
pF
DS
Q
22
G(TOT)
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Total Gate Charge
Q
5.6
G(TH)
V
= 4.5 V, V = 15 V; I = 30 A
nC
nC
GS
DS
D
Q
10.2
3.0
GS
Q
GD
Q
V
= 10 V, V = 15 V; I = 30 A
49.4
G(TOT)
GS
DS
D
SWITCHING CHARACTERISTICS (Note 6)
Turn−On Delay Time
Rise Time
t
16.3
20
d(ON)
t
r
V
= 4.5 V, V = 15 V,
DS
GS
D
ns
I
= 15 A, R = 3.0 W
G
Turn−Off Delay Time
Fall Time
t
27.5
6.6
d(OFF)
t
f
5. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
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2
NTMFS4923NE
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
SWITCHING CHARACTERISTICS (Note 6)
Turn−On Delay Time
Symbol
Test Condition
Min
Typ
Max
Unit
t
11.2
18.7
28.3
12.1
d(ON)
Rise Time
t
r
V
= 10 V, V = 15 V,
DS
GS
D
ns
I
= 15 A, R = 3.0 W
G
Turn−Off Delay Time
t
d(OFF)
Fall Time
t
f
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
T = 25°C
0.85
0.72
44.4
21.6
22.8
45
1.1
SD
J
V
S
= 0 V,
GS
V
I
= 30 A
T = 125°C
J
Reverse Recovery Time
Charge Time
t
RR
t
ns
a
V
= 0 V, dIS/dt = 100 A/ms,
GS
I
S
= 30 A
Discharge Time
t
b
Reverse Recovery Charge
PACKAGE PARASITIC VALUES
Source Inductance
Drain Inductance
Q
nC
RR
L
L
0.65
0.005
1.84
1.1
nH
nH
nH
W
S
D
G
T = 25°C
A
Gate Inductance
L
Gate Resistance
R
2.0
G
5. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
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3
NTMFS4923NE
TYPICAL CHARACTERISTICS
180
160
140
120
100
80
160
4.2 V
10 V
7 V
4.5
T = 25°C
J
V
= 4.0 V
GS
140
120
100
80
V
DS
= 10 V
3.8 V
3.6 V
3.4 V
3.2 V
T = 25°C
J
60
60
3.0 V
40
40
T = 125°C
J
2.8 V
2.6 V
20
0
20
0
2.4 V
T = −55°C
J
0
1
2
3
4
1.0
1.5
2.0
2.5
3.0
3.5
4.0
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
0.0050
0.0048
0.0046
0.0044
0.0042
0.0040
0.0038
0.0036
0.0034
0.0032
0.0030
0.0028
0.0026
0.014
0.013
0.012
0.011
0.010
0.009
T = 25°C
J
I
= 30 A
D
T = 25°C
J
V
= 4.5 V
GS
0.008
0.007
0.006
0.005
0.004
V
= 10 V
GS
0.0024
0.0022
0.0020
0.003
0.002
2.0
3.0
4.0
5.0
6.0
(V)
7.0
8.0
9.0
10
20
40
60
80
100
120
140
160
V
I , DRAIN CURRENT (A)
GS
D
Figure 3. On−Resistance vs. VGS
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
1.9
1.8
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
10,000
1000
V = 0 V
GS
I
V
= 30 A
D
= 10 V
T = 150°C
GS
J
T = 125°C
J
T = 85°C
J
100
10
−50 −25
0
25
50
75
100
125 150
5
10
15
20
25
30
T , JUNCTION TEMPERATURE (°C)
J
V
, DRAIN−TO−SOURCE VOLTAGE (V)
DS
Figure 5. On−Resistance Variation with
Figure 6. Drain−to−Source Leakage Current
Temperature
vs. Voltage
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4
NTMFS4923NE
TYPICAL CHARACTERISTICS
11
4500
4000
3500
3000
2500
2000
1500
1000
QT
V
= 0 V
GS
10
9
T = 25°C
J
C
C
iss
8
7
6
5
4
3
2
Qgd
oss
Qgs
5
T = 25°C
J
V
DD
V
GS
= 15 V
= 10 V
500
0
I
D
= 30 A
1
0
C
rss
0
5
10
15
20
25
30
0
10 15 20 25 30 35 40 45 50
Qg, TOTAL GATE CHARGE (nC)
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
1000
100
30
25
20
15
10
V
I
= 15 V
= 15 A
= 10 V
DD
t
d(off)
V
= 0 V
GS
D
V
GS
t
f
T = 125°C
J
t
r
t
d(on)
10
1
T = 25°C
J
5
0
1
10
R , GATE RESISTANCE (W)
100
0.4
0.5
0.6
0.7
0.8
0.9
1.0
V
, SOURCE−TO−DRAIN VOLTAGE (V)
G
SD
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
1000
100
10
130
120
110
100
90
I
D
= 29 A
10 ms
100 ms
80
70
1 ms
60
50
40
30
20
10
0
10 ms
0 ≤ V ≤ 20 V
Single Pulse
GS
1
T
C
= 25°C
0.1
R
Limit
DS(on)
Thermal Limit
Package Limit
dc
0.01
0.01
0.1
1
10
100
25
50
75
100
125
150
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
T , STARTING JUNCTION TEMPERATURE (°C)
J
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
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5
NTMFS4923NE
TYPICAL CHARACTERISTICS
1000
100
Duty Cycle = 50%
20%
10%
10 5%
2%
1%
1
0.1
Single Pulse
0.000001 0.00001
0.01
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (sec)
Figure 13. Thermal Response
70
60
50
40
30
20
10
0
0
10 20 30 40 50 60
ID (A)
70 80 90 100
Figure 14. GFS vs. ID
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6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
DFN5 5x6, 1.27P
(SO−8FL)
CASE 488AA
ISSUE N
1
SCALE 2:1
2 X
DATE 25 JUN 2018
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
0.20
C
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
BURRS.
D
A
2
B
E
2 X
D1
MILLIMETERS
0.20
C
DIM
A
A1
b
c
D
D1
D2
E
E1
E2
e
G
K
L
L1
M
MIN
0.90
0.00
0.33
0.23
5.00
4.70
3.80
6.00
5.70
3.45
NOM
1.00
−−−
0.41
0.28
5.15
4.90
4.00
6.15
MAX
1.10
0.05
0.51
0.33
5.30
5.10
4.20
6.30
6.10
3.85
4 X
q
E1
2
c
A1
5.90
3.65
1
2
3
4
1.27 BSC
0.575
1.35
0.575
0.125 REF
3.40
0.51
1.20
0.51
0.71
1.50
0.71
TOP VIEW
C
SEATING
DETAIL A
PLANE
0.10
0.10
C
C
3.00
0
3.80
q
−−−
12
A
_
_
GENERIC
SIDE VIEW
MARKING DIAGRAM*
DETAIL A
1
8X b
A B
XXXXXX
AYWZZ
0.10
0.05
C
c
e/2
e
L
1
4
XXXXXX = Specific Device Code
A
Y
= Assembly Location
= Year
K
RECOMMENDED
SOLDERING FOOTPRINT*
W
ZZ
= Work Week
= Lot Traceability
E2
2X
PIN 5
M
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present. Some products
may not follow the Generic Marking.
(EXPOSED PAD)
L1
0.495
4.560
2X
1.530
D2
G
2X
BOTTOM VIEW
0.475
3.200
1.330
4.530
STYLE 1:
STYLE 2:
PIN 1. ANODE
2. ANODE
2X
0.905
PIN 1. SOURCE
2. SOURCE
3. SOURCE
4. GATE
1
3. ANODE
4. NO CONNECT
5. CATHODE
0.965
5. DRAIN
4X
1.000
1.270
PITCH
DIMENSIONS: MILLIMETERS
4X
0.750
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON14036D
DFN5 5x6, 1.27P (SO−8FL)
PAGE 1 OF 1
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