NTMFS4983NFT3G [ONSEMI]
Power MOSFET 30 V, 106 A, Single NâChannel, SOâ8 FL; 功率MOSFET的30 V ， 106 A，单娜????通道， SOA ???? 8 FL
| 型号： | NTMFS4983NFT3G |
| 厂家： | 
ONSEMI |
| 描述： | Power MOSFET 30 V, 106 A, Single NâChannel, SOâ8 FL |
| 文件： | 总7页 (文件大小：121K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NTMFS4983NF
Power MOSFET
30 V, 106 A, Single N−Channel, SO−8 FL
Features
• Integrated Schottky Diode
• Low R
to Minimize Conduction Losses
• Low Capacitance to Minimize Driver Losses
DS(on)
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• Optimized Gate Charge to Minimize Switching Losses
• These Devices are Pb−Free and are RoHS Compliant
V
R
DS(ON)
MAX
I MAX
D
(BR)DSS
2.1 mW @ 10 V
3.1 mW @ 4.5 V
Applications
• CPU Power Delivery
30 V
106 A
• Synchronous Rectification for DC−DC Converters
• Low Side Switching
N−CHANNEL MOSFET
• Telecom Secondary Side Rectification
(5, 6)
D
MAXIMUM RATINGS (T = 25°C unless otherwise stated)
J
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
Symbol
Value
30
Unit
V
V
V
A
G
DSS
V
20
GS
(4)
Continuous Drain
Current R
I
D
T = 25°C
30
A
q
JA
S
(1, 2, 3)
T = 85°C
A
22
(Note 1)
Power Dissipation
(Note 1)
T = 25°C
A
P
3.13
W
A
D
D
D
D
R
q
MARKING
DIAGRAM
JA
Continuous Drain
I
D
T = 25°C
A
48
34
Current R
10 sec
v
q
JA
D
T = 85°C
A
S
S
S
G
D
D
1
Power Dissipation
T = 25°C
A
P
I
7.7
W
A
4983NF
AYWZZ
R
t v 10 sec
q
JA,
Steady
State
SO−8 FLAT LEAD
CASE 488AA
STYLE 1
Continuous Drain
Current R
T = 25°C
A
22
16
D
q
JA
D
T = 85°C
A
(Note 2)
Power Dissipation
(Note 2)
T = 25°C
A
P
I
1.7
W
A
A
Y
= Assembly Location
= Year
= Work Week
= Lot Traceability
R
q
JA
W
ZZ
Continuous Drain
Current R
T
C
T
C
T
C
= 25°C
= 85°C
= 25°C
106
76
D
q
JC
(Note 1)
Power Dissipation
(Note 1)
P
38
W
A
R
q
JC
ORDERING INFORMATION
Pulsed Drain
Current
t =10ms
p
T = 25°C
A
I
DM
320
100
†
Device
Package
Shipping
Current limited by package
T = 25°C
A
I
A
Dmaxpkg
NTMFS4983NFT1G
SO−8FL
(Pb−Free)
1500 /
Operating Junction and Storage
Temperature
T ,
−55 to
+150
°C
J
Tape & Reel
T
STG
NTMFS4983NFT3G
SO−8FL
(Pb−Free)
5000 /
Tape & Reel
Source Current (Body Diode)
Drain to Source dV/dt
I
54
6
A
S
dV/dt
EAS
V/ns
mJ
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Single Pulse Drain−to−Source Avalanche
Energy (V = 50 V, V = 10 V, I = 45 A ,
pk
101
DD
GS
L
L = 0.1 mH, R = 25 W)
G
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
T
260
°C
L
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*For additional information on our Pb−Free strategy
and soldering details, please download the ON
Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2012
1
Publication Order Number:
July, 2012 − Rev. 2
NTMFS4983NF/D
NTMFS4983NF
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Value
3.3
Unit
Junction−to−Case (Drain)
R
q
JC
JA
JA
Junction−to−Ambient – Steady State (Note 1)
Junction−to−Ambient – Steady State (Note 2)
Junction−to−Ambient − t v 10 sec
R
40
q
q
°C/W
R
74
R
q
16.3
JA
1. Surface−mounted on FR4 board using 1 sq−in pad, 2 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size of 100 mm .
2
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
OFF CHARACTERISTICS
Symbol
Test Condition
Min
Typ
Max
Unit
Drain−to−Source Breakdown Voltage
V
V
= 0 V, I = 1.0 mA
30
V
(BR)DSS
GS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/
I
D
= 10 mA, referenced to 25°C
15
(BR)DSS
mV/°C
T
J
Zero Gate Voltage Drain Current
I
V
= 0 V,
T = 25°C
500
100
DSS
GS
DS
J
mA
V
= 24 V
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
I
V
= 0 V, V
=
20 V
nA
GSS
DS
GS
V
V
= V , I = 1.0 mA
1.2
1.7
5.0
1.6
1.6
2.5
2.5
60
2.3
2.1
3.1
V
GS(TH)
GS
DS
D
Negative Threshold Temperature Coefficient
Drain−to−Source On Resistance
V
/T
J
I = 10 mA, referenced to 25°C
D
mV/°C
GS(TH)
R
DS(on)
V
= 10 V
= 4.5 V
I
D
I
D
I
D
I
D
= 30 A
= 15 A
= 30 A
= 15 A
GS
GS
mW
V
Forward Transconductance
CHARGES AND CAPACITANCES
Input Capacitance
g
FS
V
= 1.5 V, I = 15 A
S
DS
D
C
3250
1340
90
ISS
Output Capacitance
C
C
V
= 0 V, f = 1 MHz, V = 15 V
pF
OSS
RSS
GS
DS
Reverse Transfer Capacitance
Total Gate Charge
Q
22.6
2.9
G(TOT)
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Total Gate Charge
Q
G(TH)
V
= 4.5 V, V = 15 V; I = 30 A
nC
nC
GS
DS
D
Q
7.0
GS
GD
Q
6.9
Q
V
= 10 V, V = 15 V,
47.9
G(TOT)
GS
DS
= 30 A
I
D
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time
Rise Time
t
13.5
24.9
28.7
10.7
d(ON)
t
r
V
= 4.5 V, V = 15 V,
DS
GS
D
ns
I
= 15 A, R = 3.0 W
G
Turn−Off Delay Time
Fall Time
t
d(OFF)
t
f
3. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
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2
NTMFS4983NF
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time
Symbol
Test Condition
Min
Typ
Max
Unit
t
9.4
16.7
35.2
7.4
d(ON)
Rise Time
t
r
V
= 10 V, V = 15 V,
DS
GS
D
ns
I
= 15 A, R = 3.0 W
G
Turn−Off Delay Time
t
d(OFF)
Fall Time
t
f
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
T = 25°C
0.4
0.32
45
0.7
SD
J
V
= 0 V,
GS
S
V
I
= 2 A
T = 125°C
J
Reverse Recovery Time
Charge Time
t
RR
t
23
ns
nC
nH
a
V
= 0 V, dI /dt = 100 A/ms,
S
GS
I
S
= 2 A
Discharge Time
t
22
b
Reverse Recovery Charge
PACKAGE PARASITIC VALUES
Source Inductance
Drain Inductance
Q
50
RR
L
L
0.65
0.20
1.5
S
D
G
T = 25°C
A
Gate Inductance
L
Gate Resistance
R
G
1.0
W
3. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
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3
NTMFS4983NF
TYPICAL PERFORMANCE CURVES
200
190
180
170
160
150
140
130
120
110
100
90
200
4.0 V
4.2 V
4.4 V to 4.5 V
V
= 3.4 V
V
= 5 V
DS
3.6 V
GS
180
160
140
120
100
80
3.2 V
3.0 V
2.8 V
T = 125°C
J
7.5 V to 10 V
80
70
T = 25°C
60
60
J
50
T = −55°C
J
40
40
2.6 V
2.4 V
30
20
20
10
0
0
0
1
2
3
4
5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
V
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
DS
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
2.0E−02
1.8E−02
1.6E−02
1.4E−02
1.2E−02
1.0E−02
8.0E−02
6.0E−02
4.0E−02
2.0E−02
0.0E+00
3.0E−03
2.8E−03
2.6E−03
2.4E−03
2.2E−03
2.0E−03
1.8E−03
1.6E−03
1.4E−03
1.2E−03
I
= 30 A
D
T = 25°C
J
T = 25°C
J
V
= 4.5 V
GS
V
= 10 V
GS
2.0
3.0
V
4.0
5.0
6.0
7.0
8.0
9.0 10
5
20 35 50 65 80 95 110 125 140 155
, GATE−TO−SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
GS
D
Figure 3. On−Resistance vs. Gate−to−Source
Figure 4. On−Resistance vs. Drain Current and
Voltage
Gate Voltage
1.8
1.7
1.00E−01
V
= 0 V
GS
I
V
= 20 A
D
1.6
1.5
1.4
1.3
1.2
1.1
1
0.9
0.8
0.7
0.6
0.5
= 10 V
GS
T = 150°C
J
1.00E−02
1.00E−03
1.00E−04
1.00E−05
T = 125°C
J
T = 25°C
J
−50 −25
0
25
50
75
100 125 150
0
5
10
15
20
25
T , JUNCTION TEMPERATURE (°C)
J
V
, DRAIN−TO−SOURCE VOLTAGE (V)
DS
Figure 5. On−Resistance Variation with
Figure 6. Drain−to−Source Leakage Current
Temperature
vs. Voltage
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4
NTMFS4983NF
TYPICAL PERFORMANCE CURVES
11
4000
3600
3200
2800
2400
2000
1600
1200
800
V
= 0 V
GS
10
9
8
7
6
5
4
3
2
1
0
Q
T
C
iss
T = 25°C
J
C
oss
Q
Q
gd
gs
I
D
= 30 A
T = 25°C
J
V
V
= 15 V
= 10 V
DD
GS
400
C
rss
0
0
5
10
15
20
25
30
0
5
10 15 20 25 30 35 40 45 50
V , DRAIN−TO−SOURCE VOLTAGE (V)
DS
Q , TOTAL GATE CHARGE (nC)
G
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
10
9
8
7
6
5
4
3
2
1
0
1000
100
10
V
= 0 V
V
I
V
= 15 V
= 10 A
= 10 V
GS
DD
GS
t
d(off)
T = 25°C
D
J
t
f
t
r
t
d(on)
1
1
10
R , GATE RESISTANCE (W)
100
0.0
0.1
0.2
, SOURCE−TO−DRAIN VOLTAGE (V)
SD
0.3
0.4
0.5
0.6
0.7
V
G
Figure 9. Resistive Switching Time
Variation vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
1000
100
10
110
I
= 45 A
D
100
90
80
70
60
50
40
30
20
10
0
0 V < V < 20 V
Single Pulse
GS
T
C
= 25°C
10 ms
100 ms
1 ms
10 ms
1
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.1
0.01
dc
0.01
0.1
1
10
100
25
50
75
100
125
150
V
, DRAIN−TO−SOURCE VOLTAGE (V)
T , STARTING JUNCTION TEMPERATURE (°C)
J
DS
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
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5
NTMFS4983NF
TYPICAL PERFORMANCE CURVES
100
10
D = 0.5
0.2
0.1
0.05
0.02
1
0.01
0.1
SINGLE PULSE
0.00001
0.01
0.000001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (s)
Figure 13. Thermal Response
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6
NTMFS4983NF
PACKAGE DIMENSIONS
DFN5 5x6, 1.27P
(SO−8FL)
CASE 488AA
ISSUE G
2 X
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
0.20
C
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
BURRS.
D
A
2
B
E
2 X
D1
MILLIMETERS
0.20
C
DIM
A
A1
b
MIN
0.90
0.00
0.33
0.23
NOM
1.00
−−−
0.41
0.28
MAX
1.10
0.05
0.51
0.33
4 X
q
E1
2
c
D
5.15 BSC
4.90
−−−
6.15 BSC
5.80
−−−
1.27 BSC
0.61
1.35
0.61
0.17
D1
D2
E
E1
E2
e
G
K
L
L1
M
4.50
3.50
5.10
4.22
c
A1
5.50
3.45
6.10
4.30
1
2
3
4
0.51
1.20
0.51
0.05
3.00
0
0.71
1.50
0.71
0.20
3.80
TOP VIEW
C
3 X
e
SEATING
PLANE
0.10
0.10
C
C
3.40
−−−
DETAIL A
q
12
A
_
_
STYLE 1:
PIN 1. SOURCE
2. SOURCE
3. SOURCE
4. GATE
SIDE VIEW
SOLDERING FOOTPRINT*
DETAIL A
3X
4X
5. DRAIN
1.270
0.750
b
8X
4X
1.000
0.10
0.05
C
c
A
B
e/2
L
1
4
0.965
K
0.29X05
0.475
1.330
2X
0.495
E2
PIN 5
(EXPOSED PAD)
4.530
M
L1
3.200
D2
BOTTOM VIEW
G
2X
1.530
4.560
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC
reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without
limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC
does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for
surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where
personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and
its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly,
any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture
of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
For additional information, please contact your local
Sales Representative
NTMFS4983NF/D
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