NTMFS4C01N [ONSEMI]
Single N-Channel Field Effect Transistor;
| 型号： | NTMFS4C01N |
| 厂家： | 
ONSEMI |
| 描述： | Single N-Channel Field Effect Transistor |
| 文件： | 总6页 (文件大小：124K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NTMFS4C01N
Power MOSFET
30 V, 0.9 mW, 303 A, Single N−Channel,
SO−8FL
Features
• Small Footprint (5x6 mm) for Compact Design
http://onsemi.com
• Low R
to Minimize Conduction Losses
DS(on)
• Low Q and Capacitance to Minimize Driver Losses
G
V
R
MAX
I MAX
D
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
(BR)DSS
DS(ON)
Compliant
0.9 mW @ 10 V
1.2 mW @ 4.5 V
30 V
303 A
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Parameter
Drain−to−Source Voltage
Symbol
Value
30
Unit
V
V
DSS
D (5)
Gate−to−Source Voltage
V
"20
303
V
GS
Continuous Drain Cur-
T
T
= 25°C
= 25°C
I
A
C
D
rent R
(Notes 1, 3)
q
JC
Steady
State
G (4)
Power Dissipation
(Notes 1, 3)
P
134
47
W
A
C
D
R
q
JC
Continuous Drain Cur-
T = 25°C
A
I
S (1,2,3)
N−CHANNEL MOSFET
D
rent R
3)
(Notes 1, 2,
q
JA
Steady
State
Power Dissipation
(Notes 1, 2, 3)
T = 25°C
A
P
3.2
W
D
R
q
JA
MARKING
DIAGRAM
Pulsed Drain Current
T = 25°C, t = 10 ms
I
DM
900
A
A
p
D
Operating Junction and Storage Temperature
T , T
−55 to
°C
J
stg
150
S
S
S
G
D
D
1
4C01N
AYWZZ
Source Current (Body Diode)
I
S
110
862
A
SO−8 FLAT LEAD
CASE 488AA
STYLE 1
Single Pulse Drain−to−Source Avalanche
E
AS
mJ
Energy (I
= 35 A)
L(pk)
D
Lead Temperature for Soldering Purposes
T
260
°C
L
A
Y
W
ZZ
= Assembly Location
= Year
= Work Week
= Lot Traceability
(1/8″ from case for 10 s)
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS (Note 1)
Parameter
Symbol
Value
Unit
ORDERING INFORMATION
Junction−to−Case − Steady State
R
0.93
39
°C/W
†
q
JC
Device
Package
Shipping
Junction−to−Ambient − Steady State (Note 2)
R
q
JA
NTMFS4C01NT1G
SO−8FL
(Pb−Free)
1500 /
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
Tape & Reel
2
2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.
NTMFS4C01NT3G
SO−8FL
(Pb−Free)
5000 /
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2014
1
Publication Order Number:
September, 2014 − Rev. 0
NTMFS4C01N/D
NTMFS4C01N
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
OFF CHARACTERISTICS
Symbol
Test Condition
Min
Typ
Max
Unit
Drain−to−Source Breakdown Voltage
V
V
GS
= 0 V, I = 250 mA
30
V
(BR)DSS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/
16.3
(BR)DSS
mV/°C
T
J
Zero Gate Voltage Drain Current
I
V
= 0 V,
T = 25 °C
1
DSS
GS
DS
J
V
= 24 V
mA
T = 125°C
J
100
100
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
I
V
= 0 V, V = 20 V
nA
GSS
DS
GS
GS
V
V
= V , I = 250 mA
1.3
2.2
V
GS(TH)
DS
D
Negative Threshold Temperature Coefficient
Drain−to−Source On Resistance
V
/T
5.8
0.71
0.94
183
1.0
mV/°C
GS(TH)
J
R
V
= 10 V
I
D
I
D
I
D
= 30 A
= 30 A
= 30 A
0.9
1.2
DS(on)
GS
mW
V
GS
= 4.5 V
= 3 V
Forward Transconductance
Gate Resistance
g
FS
V
S
DS
R
T = 25 °C
A
W
G
CHARGES AND CAPACITANCES
Input Capacitance
C
10144
5073
148
63
ISS
Output Capacitance
C
V
GS
= 0 V, f = 1 MHz, V = 15 V
pF
OSS
RSS
DS
Reverse Transfer Capacitance
Total Gate Charge
C
Q
G(TOT)
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Total Gate Charge
Q
18
G(TH)
V
GS
= 4.5 V, V = 15 V; I = 30 A
nC
nC
DS
D
Q
29
GS
GD
Q
13
Q
V
GS
= 10 V, V = 15 V,
139
G(TOT)
DS
I
= 30 A
D
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time
t
29
68
53
36
d(ON)
Rise Time
t
r
V
GS
= 4.5 V, V = 15 V, I = 15 A,
DS D
ns
V
R
= 3.0 W
G
Turn−Off Delay Time
t
d(OFF)
Fall Time
t
f
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
T = 25°C
0.73
0.55
87
1.1
SD
J
V
S
= 0 V,
GS
I
= 10 A
T = 125°C
J
Reverse Recovery Time
Charge Time
t
RR
t
43
ns
a
V
= 0 V, dI /dt = 100 A/ms,
S
GS
I
S
= 30 A
Discharge Time
t
44
b
Reverse Recovery Charge
Q
147
nC
RR
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
5. Switching characteristics are independent of operating junction temperatures.
http://onsemi.com
2
NTMFS4C01N
TYPICAL CHARACTERISTICS
400
350
300
250
200
150
100
50
400
10 V
V
DS
= 3 V
3.4 V
350
300
250
200
150
100
50
3.6 V
3.2 V
3.0 V
4.5 V
T = 25°C
J
2.8 V
= 2.6 V
2.5
T = 150°C
J
V
GS
T = −55°C
J
0
0
0.0
0.5
1.0
1.5
2.0
3.0
1.5
2
2.5
3
3.5
4
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
T = 25°C
I
= 30 A
J
D
T = 25°C
J
V
= 4.5 V
GS
V
= 10 V
200
GS
3
4
5
6
7
8
9
10
0
50
100
150
250
300
350 400
V
GS
, GATE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 3. On−Resistance vs. Gate−to−Source
Figure 4. On−Resistance vs. Drain Current and
Voltage
Gate Voltage
100000
10000
1000
100
1.8
V
= 10 V
= 30 A
GS
1.6
1.4
1.2
1.0
I
D
T = 125°C
J
T = 100°C
J
T = 85°C
J
0.8
0.6
10
0
5
10
15
20
25
30
−50 −25
0
25
50
75
100
125
150
T , JUNCTION TEMPERATURE (°C)
J
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Figure 6. Drain−to−Source Leakage Current
Temperature
vs. Voltage
http://onsemi.com
3
NTMFS4C01N
TYPICAL CHARACTERISTICS
18
15
12
9
100k
10k
12
11
10
Q
T
C
ISS
V
V
V
9
8
7
6
5
4
3
2
DS
GS
C
OSS
1k
Q
GD
Q
GS
6
V
= 0 V
GS
= 15 V
DS
= 30 A
100
10
T = 25°C
J
C
RSS
I
D
f = 1 MHz
3
0
T = 25°C
J
1
0
0.1
1
10
100
0
20
40
60
80
100
120
140
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Q , TOTAL GATE CHARGE (nC)
G
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
1000
1000
100
10
t
d(off)
V
V
I
= 4.5 V
= 15 V
= 15 A
GS
DD
t
D
r
t
f
t
d(on)
100
10
1
T = 150°C
J
T = −55°C
J
T = 25°C
J
0.1
0.1
1
10
100
0.3
0.4
V
0.5
0.6
0.7
0.8
0.9
1.0
R , GATE RESISTANCE (W)
G
, SOURCE−TO−DRAIN VOLTAGE (V)
SD
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
1000
1 ms
10 ms
10 ms
100
100 ms
V
≤ 10 V
= 25°C
GS
10
T
C
R
Limit
DS(on)
Thermal Limit
Package Limit
1
0.1
1
10
100
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
http://onsemi.com
4
NTMFS4C01N
TYPICAL CHARACTERISTICS
100
10
1
R
= Steady State = 39°C/W
q
JA
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
0.01
P
Cu Area = 650 mm2
CB
P
Cu Thk = 2 oz
CB
0.1
0.01
Single Pulse
0.001
0.000001 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
t, TIME (s)
Figure 12. Thermal Impedance (Junction−to−Ambient)
1000
100
10
1
T
= 25°C
J(initial)
T
= 100°C
J(initial)
1.00E−04
1.00E−03
1.00E−02
TIME IN AVALANCHE (s)
Figure 13. Avalanche Characteristics
http://onsemi.com
5
NTMFS4C01N
PACKAGE DIMENSIONS
DFN5 5x6, 1.27P
(SO−8FL)
CASE 488AA
ISSUE K
2 X
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
0.20
C
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
BURRS.
D
A
2
B
E
2 X
D1
MILLIMETERS
0.20
C
DIM
A
A1
b
c
D
D1
D2
E
E1
E2
e
MIN
0.90
0.00
0.33
0.23
5.00
4.70
3.80
6.00
5.70
3.45
NOM
1.00
−−−
0.41
0.28
5.15
4.90
4.00
6.15
5.90
3.65
1.27 BSC
0.61
1.35
MAX
1.10
0.05
0.51
0.33
5.30
5.10
4.20
6.30
6.10
3.85
4 X
q
E1
2
c
A1
1
2
3
4
G
K
L
0.51
1.20
0.51
0.71
1.50
0.71
TOP VIEW
C
3 X
e
0.61
SEATING
L1
M
0.125 REF
3.40
−−−
PLANE
0.10
0.10
C
C
3.00
0
3.80
DETAIL A
q
12
A
_
_
STYLE 1:
PIN 1. SOURCE
2. SOURCE
3. SOURCE
4. GATE
SOLDERING FOOTPRINT*
SIDE VIEW
DETAIL A
3X
4X
5. DRAIN
1.270
0.750
b
8X
4X
1.000
0.10
0.05
C
c
A
B
e/2
L
1
4
0.965
K
0.29X05
0.475
1.330
2X
0.495
E2
4.530
PIN 5
(EXPOSED PAD)
M
L1
3.200
D2
BOTTOM VIEW
G
2X
1.530
4.560
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and the
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed
at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation
or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets
and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each
customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended,
or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which
the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or
unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim
alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable
copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
For additional information, please contact your local
Sales Representative
NTMFS4C01N/D
相关型号：
©2020 ICPDF网 联系我们和版权申明