NTMFS4D8N02HT1G [ONSEMI]
MOSFET Power Single N-Channel 25V SO8FL;
| 型号： | NTMFS4D8N02HT1G |
| 厂家： | 
ONSEMI |
| 描述： | MOSFET Power Single N-Channel 25V SO8FL |
| 文件： | 总7页 (文件大小：192K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or
subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi
product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without
notice. The information herein is provided “as-is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality,
or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all
liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws,
regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdonsemi and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
MOSFET - Power, Single
N-Channel, SO8-FL
25 V, 4.2 mW, 75 A
NTMFS4D8N02H
Features
• Advanced Package (5x6 mm) with Excellent Thermal Conduction
www.onsemi.com
• Ultra Low R
to Improve System Efficiency
DS(on)
• Optimized Design to Minimize Conduction and Switching Losses
• These Devices are Pb−Free, Halogen−Free/BFR−Free and are RoHS
Compliant
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
4.2 mꢂ @ 10 V
7.0 mꢂ @ 4.5 V
Typical Applications
25 V
75 A
• High Performance DC−DC Converters
• System Voltage Rails
• Netcom, Telecom
• Servers & Point of Load
D (5)
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Parameter
Drain−to−Source Voltage
Symbol
Value
25
Unit
V
G (4)
V
DSS
Gate−to−Source Voltage
V
GS
20
V
S (1,2,3)
N−CHANNEL MOSFET
Continuous Drain
T
T
= 25°C
= 25°C
I
75
A
C
D
Current R
(Note 1)
ꢀ
JC
Steady
State
Power Dissipation
(Note 1)
P
41
21
W
A
C
D
R
ꢀ
JC
MARKING
DIAGRAM
Continuous Drain
Current R (Note 1)
T = 25°C
A
I
D
ꢀ
JA
Steady
State
D
1
Power Dissipation
(Note 1)
T = 25°C
A
P
3.2
W
D
S
S
S
G
D
D
R
ꢀ
JA
DFN5
(SO−8FL)
CASE 488AA
STYLE 1
4D8N2H
AYWZZ
Pulsed Drain Current
T = 25°C, t = 10 ꢁ s
I
DM
216
51
A
A
p
Single Pulse Drain−to−Source Avalanche
E
AS
mJ
D
Energy (I = 32 A, L = 0.1 mH) (Note 2)
L(pk)
4D8N2H = Specific Device Code
Operating Junction and Storage Temperature
Range
T , T
−55 to
°C
°C
J
stg
A
Y
= Assembly Location
= Year
+150
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
L
260
W
ZZ
= Work Week
= Lot Traceability
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
ORDERING INFORMATION
See detailed ordering, marking and shipping information on
page 5 of this data sheet.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Value
3.7
Unit
Junction−to−Case − Steady State (Note 1)
Junction−to−Ambient − Steady State (Note 1)
R
°C/W
ꢀ
JC
R
47.3
ꢀ
JA
2
1. Surface−mounted on FR4 board using a 1 in , 2 oz. Cu pad.
2. This is the absolute maximum rating. Parts are 100% UIS tested at T = 25°C,
J
V
GS
= 10 V, I = 21 A, E = 22 mJ.
L AS
© Semiconductor Components Industries, LLC, 2020
1
Publication Order Number:
April, 2021 − Rev. 1
NTMFS4D8N02H/D
NTMFS4D8N02H
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
V
GS
= 0 V, I = 250 ꢁ A
25
V
(BR)DSS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/
I
D
= 250 ꢁ A, ref to 25°C
10.6
(BR)DSS
mV/°C
T
J
Zero Gate Voltage Drain Current
I
V
= 0 V,
= 20 V
T = 25°C
1.0
10
DSS
GS
DS
J
V
ꢁ
A
T = 125°C
J
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
I
V
= 0 V, V = 20 V
100
nA
GSS
DS
GS
GS
V
V
= V , I = 250 ꢁ A
1.2
2.1
V
GS(TH)
DS
D
Threshold Temperature Coefficient
Drain−to−Source On Resistance
V
/T
I
= 250 ꢁ A, ref to 25°C
−4.2
3.4
5.4
54
mV/°C
GS(TH)
J
D
R
V
GS
GS
= 10 V
= 4.5 V
I
= 20 A
= 15 A
4.2
7.0
DS(on)
D
D
mꢂ
V
I
Forward Transconductance
Gate Resistance
g
FS
V
DS
= 5 V, I = 15 A
S
D
R
T = 25°C
A
0.9
ꢂ
G
CHARGES & CAPACITANCES
Input Capacitance
C
780
530
39
ISS
Output Capacitance
C
V
= 0 V, V = 12 V, f = 1 MHz
pF
OSS
RSS
GS
DS
Reverse Transfer Capacitance
Total Gate Charge
C
Q
6.2
1.4
2.5
1.5
13.4
G(TOT)
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Total Gate Charge
Q
G(TH)
V
GS
= 4.5 V, V = 12 V; I = 30 A
nC
nC
DS
D
Q
GS
GD
Q
Q
V
= 10 V, V = 12 V; I = 30 A
G(TOT)
GS DS D
SWITCHING CHARACTERISTICS, V = 4.5 V (Note 4)
GS
Turn−On Delay Time
Rise Time
t
9.7
7.4
13
d(ON)
t
r
V
= 4.5 V, V = 12 V,
DS
GS
D
ns
I
= 30 A, R = 3 ꢂ
G
Turn−Off Delay Time
Fall Time
t
d(OFF)
t
f
5.2
SWITCHING CHARACTERISTICS, V = 10 V (Note 4)
GS
Turn−On Delay Time
Rise Time
t
6.9
2.6
18
d(ON)
t
r
V
= 10 V, V = 12 V,
DS
GS
D
ns
V
I
= 30 A, R = 3 ꢂ
G
Turn−Off Delay Time
Fall Time
t
d(OFF)
t
f
2.7
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
T = 25°C
0.8
0.65
28
1.0
SD
RR
J
V
S
= 0 V,
= 10 A
GS
I
T = 125°C
J
Reverse Recovery Time
Charge Time
t
t
a
14
ns
V
= 0 V, dI /dt = 100 A/ꢁ s,
S
GS
I
S
= 10 A
Discharge Time
t
b
14
Reverse Recovery Charge
Q
11
nC
RR
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: pulse width v 300 ꢁ s, duty cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
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2
NTMFS4D8N02H
TYPICAL CHARACTERISTICS
70
60
50
40
30
20
70
V
GS
= 10 V to 4.5 V
60
3.5 V
3.2 V
3.0 V
50
40
30
20
T = 25°C
J
2.8 V
2.6 V
2.4 V
10
0
10
0
T = 125°C
J
T = −55°C
J
0
1
2
3
0
1
2
3
4
5
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
7
6
5
4
3
7
6
5
4
T = 25°C
D
T = 25°C
J
J
V
= 4.5 V
= 10 V
I
= 20 A
GS
V
GS
3
2
2
1
3
4
5
6
7
8
9
10
10
20
30
40
50
60
70
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 3. On−Resistance vs. Gate−to−Source
Figure 4. On−Resistance vs. Drain Current and
Voltage
Gate Voltage
3.0
2.5
2.0
1.5
1.0
1M
100K
10K
1K
V
= 10 V
= 20 A
GS
I
D
T = 150°C
J
T = 125°C
J
T = 85°C
J
100
10
1
T = 25°C
J
0.5
0
0.1
−50 −25
0
25
50
75
100
125
150
5
7
9
11 13 15
, DRAIN−TO−SOURCE VOLTAGE (V)
DS
17
19
21 23 25
T , JUNCTION TEMPERATURE (°C)
V
J
Figure 5. On−Resistance Variation with
Figure 6. Drain−to−Source Leakage Current
Temperature
vs. Voltage
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3
NTMFS4D8N02H
TYPICAL CHARACTERISTICS
10
9
10K
1K
8
C
ISS
7
6
5
4
3
C
OSS
RSS
100
C
10
1
V
DS
= 12 V
Q
Q
GD
GS
V
= 0 V
2
1
0
GS
I
D
= 30 A
T = 25°C
J
T = 25°C
J
f = 1 MHz
0
5
10
15
20
25
0
2
4
6
8
10
12
14
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Q , TOTAL GATE CHARGE (nC)
G
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source vs. Total Charge
100
10
V
GS
= 0 V
t
d(off)
100
t
r
t
d(on)
10
1
1
V
V
= 4.5 V
= 12 V
GS
t
f
DS
T = 125°C
J
I
D
= 30 A
T = 25°C
J
T = −55°C
J
0.1
1
10
R , GATE RESISTANCE (ꢂ)
100
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
G
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
1000
100
10
100
10 ꢁ s
T
= 25°C
J(initial)
10
100 ꢁ s
T
V
= 25°C
C
≤ 10 V
GS
1 ms
10 ms
100 ms
T
= 100°C
J(initial)
Single Pulse
1
R
Limit
DS(on)
1 s
Thermal Limit
Package Limit
0.1
1
0.1
1
10
100
0.00001
0.0001
t , TIME IN AVALANCHE (s)
AV
0.001
0.01
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Drain Current vs. Time in
Avalanche
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4
NTMFS4D8N02H
TYPICAL CHARACTERISTICS
10
1
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
0.1
0.01
Single Pulse
0.01
0.000001 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
t, PULSE TIME (sec)
Figure 13. Transient Thermal Impedance
DEVICE ORDERING INFORMATION
Device
†
Marking
Package
Shipping
NTMFS4D8N02HT1G
4D8N2H
DFN5
(Pb−Free)
1500 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
www.onsemi.com
5
NTMFS4D8N02H
PACKAGE DIMENSIONS
DFN5 5x6, 1.27P
(SO−8FL)
CASE 488AA
ISSUE N
2 X
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
0.20
C
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
BURRS.
D
A
2
B
E
2 X
D1
MILLIMETERS
0.20
C
DIM
A
A1
b
c
D
D1
D2
E
E1
E2
e
G
K
L
L1
M
MIN
0.90
0.00
0.33
0.23
5.00
4.70
3.80
6.00
5.70
3.45
NOM
1.00
−−−
0.41
0.28
5.15
4.90
4.00
6.15
MAX
1.10
0.05
0.51
0.33
5.30
5.10
4.20
6.30
6.10
3.85
4 X
q
E1
2
c
A1
5.90
3.65
1
2
3
4
1.27 BSC
0.575
1.35
0.575
0.125 REF
3.40
0.51
1.20
0.51
0.71
1.50
0.71
TOP VIEW
C
SEATING
DETAIL A
PLANE
0.10
0.10
C
C
3.00
0
3.80
q
−−−
12
A
_
_
RECOMMENDED
STYLE 1:
SOLDERING FOOTPRINT*
PIN 1. SOURCE
2. SOURCE
3. SOURCE
4. GATE
2X
0.495
SIDE VIEW
DETAIL A
4.560
2X
5. DRAIN
1.530
8X b
A B
0.10
0.05
C
c
e/2
e
2X
0.475
L
3.200
1.330
1
4
4.530
K
2X
0.905
E2
PIN 5
(EXPOSED PAD)
M
1
L1
0.965
4X
D2
BOTTOM VIEW
1.000
G
1.270
PITCH
DIMENSIONS: MILLIMETERS
4X
0.750
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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