NTMFS4H11NFT3G [ONSEMI]
Power MOSFET;
| 型号： | NTMFS4H11NFT3G |
| 厂家： | 
ONSEMI |
| 描述： | Power MOSFET 开关 脉冲 光电二极管 晶体管 |
| 文件： | 总7页 (文件大小：92K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NTMFS4H11NF
Power MOSFET
25 V, 334 A, Single N−Channel, SO−8FL
Features
• Integrated Schottky Diode
• Optimized Design to Minimize Conduction and Switching Losses
• Optimized Package to Minimize Parasitic Inductances
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• Optimized material for improved thermal performance
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
V
MAX R
TYP Q
GTOT
GS
DS(on)
4.5 V
10 V
1.0 mW
0.7 mW
37.8 nC
82 nC
Applications
• High Performance DC-DC Converters
• System Voltage Rails
• Netcom, Telecom
• Servers
PIN CONNECTIONS
SO8−FL (5 x 6 mm)
• Point of Load
MAXIMUM RATINGS (T = 25°C unless otherwise stated)
J
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current R
Symbol
Value
25
Units
V
V
DSS
(Top View)
(Bottom View)
V
GS
20
V
(Note 1)
I
D
54
A
q
JA
N−CHANNEL MOSFET
Power Dissipation R
(Note 1)
P
3.2
W
A
q
D
JA
D
(5, 6)
Continuous Drain Current R
(Note 1)
I
D
334
125
568
487
q
JC
Power Dissipation R
(Note 1)
P
D
W
A
q
JC
Pulsed Drain Current (t = 10 ms)
I
DM
p
G
Single Pulse Drain-to-Source Avalanche
E
AS
mJ
Energy (Note 1) (I = 57 A , L = 0.3 mH)
(4)
L
pk
Drain to Source dV/dt
dV/dt
7
V/ns
°C
S
(1, 2, 3)
Maximum Junction Temperature
Storage Temperature Range
T
150
J(max)
T
STG
−55 to
150
°C
ORDERING INFORMATION
See detailed ordering and shipping information on page 6 of
this data sheet.
Lead Temperature Soldering Reflow (SMD
Styles Only), Pb-Free Versions (Note 2)
T
SLD
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
2
2
1. Values based on copper area of 645 mm (or 1 in ) of 2 oz copper thickness
and FR4 PCB substrate.
2. For more information, please refer to our Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
3. This is the absolute maximum rating. Parts are 100% UIS tested at T = 25°C,
J
V
GS
= 10 V, I = 37 A, E = 205 mJ.
L AS
THERMALCHARACTERISTICS
Parameter
Symbol
Max
Units
Thermal Resistance,
Junction-to-Ambient (Note 1 and 4)
Junction-to-Case (Note 1 and 4)
°C/W
R
38.9
1.0
q
JA
JC
R
q
4. Thermal Resistance R
and R
as defined in JESD51−3.
JC
q
q
JA
© Semiconductor Components Industries, LLC, 2014
1
Publication Order Number:
March, 2014 − Rev. 0
NTMFS4H11NF/D
NTMFS4H11NF
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
V
GS
= 0 V, I = 250 mA
25
V
(BR)DSS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/
I
D
= 10 mA reference to 25°C
16
(BR)DSS
mV/°C
T
J
Zero Gate Voltage Drain Current
I
V
V
= 0 V,
= 20 V
T = 25°C
J
500
DSS
GS
DS
mA
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
I
V
= 0 V, V = +20 V
+100
nA
GSS
DS
GS
V
V
= V , I = 250 mA
1.2
2.1
V
GS(TH)
GS
DS
D
Negative Threshold Temperature Coefficient
Drain−to−Source On Resistance
V
/T
I = 10 mA reference to 25°C
D
3.7
0.56
0.79
101
mV/°C
GS(TH)
J
R
V
= 10 V
= 4.5 V
I
= 30 A
= 30 A
0.7
1
DS(on)
GS
D
D
mW
V
GS
I
Forward Transconductance
g
FS
V
DS
= 12 V, I = 20 A
S
D
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
C
5538
3416
175.3
37.8
2.3
ISS
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
C
OSS
C
RSS
V
= 0 V, f = 1 MHz, V = 12 V
pF
nC
GS
DS
Q
G(TOT)
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Total Gate Charge
Q
G(TH)
V
GS
= 4.5 V, V = 12 V; I = 30 A
DS D
Q
11.8
8
GS
Q
GD
Q
V
GS
= 10 V, V = 12 V; I = 30 A
82
nC
G(TOT)
DS
D
Gate Resistance
R
T = 25°C
A
1.3
2
W
G
SWITCHING CHARACTERISTICS, V = 4.5 V (Note 5)
GS
Turn−On Delay Time
Rise Time
t
16.9
42.3
46.3
30.9
d(ON)
t
r
V
GS
= 4.5 V, V = 12 V, I = 15 A,
DD D
ns
R
= 3.0 W
G
Turn−Off Delay Time
Fall Time
t
d(OFF)
t
f
SWITCHING CHARACTERISTICS, V = 10 V (Note 5)
GS
Turn−On Delay Time
Rise Time
t
10.9
33.2
58.3
23.3
d(ON)
t
r
V
V
= 11.5 V, V = 12 V,
DD
GS
ns
V
I
D
= 15 A, R = 3.0 W
G
Turn−Off Delay Time
Fall Time
t
d(OFF)
t
f
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
T = 25°C
J
0.35
0.27
66.7
33.1
33.6
90
0.6
= 0 V,
GS
I
S
= 2.0 A
T = 125°C
J
Reverse Recovery Time
Charge Time
t
RR
t
t
ns
a
V
= 0 V, dIS/dt = 100 A/ms,
GS
I
S
= 30 A
Discharge Time
b
nC
Reverse Recovery Charge
Q
RR
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
5. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
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2
NTMFS4H11NF
TYPICAL CHARACTERISTICS
200
180
160
180
V
GS
= 10 V to 3 V
V
DS
= 5 V
160
140
120
100
80
V
= 2.8 V
GS
140
120
100
80
T = 25°C
J
V
V
= 2.6 V
= 2.4 V
GS
T = 125°C
J
60
GS
60
T = 25°C
J
40
40
V
GS
= 2.2 V
20
0
20
0
T = −55°C
J
0
0.5
1.0
1.5
2.0
2.5
3.0
0
0.5
1.0
1.5
2.0
2.5
3.0
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
0.0018
0.0016
0.0014
0.0012
0.0010
0.0008
0.0006
0.0004
1.0E−03
8.0E−04
6.0E−04
4.0E−04
T = 25°C
I
D
= 30 A
V
= 4.5 V
= 10 V
GS
V
GS
2.0E−04
0E+00
0.0002
0
3
4
5
6
7
8
9
10
20 30 40 50 60
70 80 90 100 110 120
V
GS
(V)
I , DRAIN CURRENT (A)
D
Figure 3. On−Resistance vs. VGS
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
1E−01
1E−02
1E−03
V
GS
= 0 V
T = 150°C
I
V
= 30 A
J
D
= 10 V
GS
T = 125°C
J
T = 85°C
J
1E−04
1E−05
T = 25°C
J
0.8
0.7
−50 −25
0
25
50
75
100
125
150
10
15
, DRAIN−TO−SOURCE VOLTAGE (V)
DS
20
25
T , JUNCTION TEMPERATURE (°C)
V
J
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
NTMFS4H11NF
TYPICAL CHARACTERISTICS
10,000
9000
8000
7000
6000
5000
4000
3000
2000
10
Q
T
T = 25°C
GS
J
V
= 0 V
8
6
4
C
C
iss
Q
Q
gd
gs
oss
T = 25°C
GS
J
V
= 10 V
2
0
V
DD
= 12.0 V
1000
0
I
D
= 30 A
C
rss
0
5
10
15
20
25
0
10
20
30
40
50
60
70
80
90
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Q , TOTAL GATE CHARGE (nC)
g
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
1000
100
25
20
t
t
d(off)
V
= 12 V
= 15 A
= 10 V
DD
V
GS
= 0 V
I
D
d(on)
V
GS
t
r
15
10
T = 125°C
J
T = 25°C
J
t
f
10
1
5
0
1
10
R , GATE RESISTANCE (W)
100
0.2
0.3
0.4
0.5
0.6
0.7
V
, SOURCE−TO−DRAIN VOLTAGE (V)
G
SD
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
1000
100
10
220
200
180
160
140
120
100
80
100 ms
I
D
= 37 A
1 ms
10 ms
0 V < V < 10 V
GS
1
60
R
Limit
dc
0.1
DS(on)
40
Thermal Limit
Package Limit
20
0
0.01
0.01
0.1
1
10
100
25
50
75
100
125
150
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
T , STARTING JUNCTION TEMPERATURE (°C)
J
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
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4
NTMFS4H11NF
TYPICAL CHARACTERISTICS
100
10
50% Duty Cycle
20%
10%
5%
2%
1%
1
2
0.1
PCB Cu Area 650 mm
PCB Cu thk 1 oz
Single Pulse
0.0001 0.001
0.01
0.000001 0.00001
0.01
0.1
1
10
100
1000
PULSE TIME (sec)
Figure 13. Thermal Characteristics
400
350
300
250
200
150
100
1E+03
1E+02
1E+01
1E+00
50
0
0
20
40
60
80
(A)
100
120
140
160
1E−07 1E−06
1E−05
1E−04
1E−03 1E−02
I
D
PULSE WIDTH (sec)
Figure 14. GFS vs. ID
Figure 15. Avalanche Characteristics
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5
NTMFS4H11NF
ORDERING INFORMATION
Device
†
Package
Shipping
NTMFS4H11NFT1G
SO8−FL
(Pb-Free)
1500 / Tape & Reel
5000 / Tape & Reel
NTMFS4H11NFT3G
SO8−FL
(Pb-Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
MARKING
DIAGRAM
D
1
S
S
S
G
D
D
4H11NF
AYWZZ
SO−8 FLAT LEAD
CASE 488AA
STYLE 1
D
A
Y
= Assembly Location
= Year
W
ZZ
= Work Week
= Lot Traceability
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6
NTMFS4H11NF
PACKAGE DIMENSIONS
DFN5 5x6, 1.27P
(SO−8FL)
CASE 488AA
ISSUE H
2 X
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
0.20
C
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
BURRS.
D
A
2
B
E
2 X
D1
MILLIMETERS
0.20
C
DIM
A
A1
b
MIN
0.90
0.00
0.33
0.23
NOM
1.00
−−−
0.41
0.28
MAX
1.10
0.05
0.51
0.33
4 X
q
E1
2
c
D
5.15 BSC
4.90
4.00
6.15 BSC
5.90
3.65
1.27 BSC
0.61
1.35
0.61
0.17
D1
D2
E
E1
E2
e
G
K
L
L1
M
4.70
3.80
5.10
4.20
c
A1
5.70
3.45
6.10
3.85
1
2
3
4
0.51
1.20
0.51
0.05
3.00
0
0.71
1.50
0.71
0.20
3.80
TOP VIEW
C
3 X
e
SEATING
PLANE
0.10
0.10
C
C
3.40
−−−
DETAIL A
q
12
A
_
_
STYLE 1:
PIN 1. SOURCE
2. SOURCE
3. SOURCE
4. GATE
SIDE VIEW
DETAIL A
SOLDERING FOOTPRINT*
5. DRAIN
b
8X
3X
4X
1.270
0.750
0.10
0.05
C
c
A
B
4X
1.000
e/2
L
1
4
K
0.965
0.29X05
0.475
1.330
E2
PIN 5
(EXPOSED PAD)
M
2X
0.495
L1
4.530
3.200
D2
BOTTOM VIEW
G
2X
1.530
4.560
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC
reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without
limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC
does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for
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any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture
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PUBLICATION ORDERING INFORMATION
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NTMFS4H11NF/D
相关型号：
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