NTMFS5113PLT1G [ONSEMI]
Power MOSFET −60V, 64A, 14 mOhm, Single P-Channel, SO8-FL, Logic Level.;
| 型号： | NTMFS5113PLT1G |
| 厂家： | 
ONSEMI |
| 描述： | Power MOSFET −60V, 64A, 14 mOhm, Single P-Channel, SO8-FL, Logic Level. |
| 文件： | 总7页 (文件大小：182K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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www.onsemi.com
onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or
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or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
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NTMFS5113PL
Power MOSFET
−60 V, 14 mW, −64 A, Single P−Channel
Features
• Low R
to Minimize Conduction Losses
• High Current Capability
DS(on)
www.onsemi.com
• Avalanche Energy Specified
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
V
R
I
D
(BR)DSS
DS(on)
14 mW @ −10 V
22 mW @ −4.5 V
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
−60 V
−64 A
Parameter
Drain−to−Source Voltage
Symbol
Value
−60
"20
−64
−45
150
75
Unit
V
V
DSS
S (1, 2, 3)
Gate−to−Source Voltage
V
GS
V
Continuous Drain Cur-
T
= 25°C
= 100°C
= 25°C
I
A
C
D
rent R
(Notes 1, 2, 3)
G (4)
q
JC
T
C
Steady
State
P−Channel
Power Dissipation R
(Notes 1, 2)
T
C
P
W
A
q
D
JC
T
C
= 100°C
D (5, 6)
Continuous Drain Cur-
rent R (Notes 1, 2, 3)
T = 25°C
I
−10
−7
A
D
q
JA
T = 100°C
A
Steady
State
MARKING
DIAGRAM
Power Dissipation R
(Notes 1, 2)
T = 25°C
A
P
3.8
W
q
D
JA
T = 100°C
A
1.9
D
Pulsed Drain Current
T = 25°C, t = 10 ms
I
DM
−415
A
A
p
S
S
S
G
D
D
1
Operating Junction and Storage Temperature
T , T
−55 to
175
°C
V5113L
AYWZZ
J
stg
DFN5
CASE 488AA
STYLE 1
Source Current (Body Diode)
I
S
−150
A
D
Single Pulse Drain−to−Source Avalanche
E
AS
315
mJ
Energy (T = 25°C, V = 50 V, V = 10 V,
J
DD
GS
A
Y
= Assembly Location
= Year
I
= 46 A, L = 0.3 mH, R = 25 W)
L(pk)
G
W
ZZ
= Work Week
= Lot Traceability
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
L
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
ORDERING INFORMATION
See detailed ordering, marking and shipping information on
page 5 of this data sheet.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Value
Unit
Junction−to−Case − Steady State (Drain)
(Note 2)
R
1.0
°C/W
q
JC
Junction−to−Ambient − Steady State (Note 2)
R
39
°C/W
q
JA
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2
2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.
3. Continuous DC current rating. Maximum current for pulses as long as
1 second is higher but is dependent on pulse duration and duty cycle.
© Semiconductor Components Industries, LLC, 2018
1
Publication Order Number:
October, 2018 − Rev. 0
NTMFS5113PL/D
NTMFS5113PL
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Zero Gate Voltage Drain Current
V
V
= 0 V, I = −250 mA
−60
V
(BR)DSS
GS
D
I
T = 25°C
−1.0
−100
"100
mA
DSS
J
V
GS
= 0 V,
= −60 V
V
DS
T = 125°C
J
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
I
V
DS
= 0 V, V = "20 V
nA
GSS
GS
V
V
GS
= V , I = −250 mA
−1.5
−2.5
14
V
GS(TH)
DS
D
Drain−to−Source On Resistance
R
V
GS
= −10 V, I = −17 A
10.5
16
mW
DS(on)
D
V
= −4.5 V, I = −5 A
22
GS
DS
D
Froward Transconductance
CHARGES AND CAPACITANCES
Input Capacitance
g
FS
V
= −15 V, I = −15 A
43
S
D
C
V
= 0 V, f = 1.0 MHz,
4400
505
319
45
pF
iss
GS
V
DS
= −25 V
Output Capacitance
C
oss
Reverse Transfer Capacitance
Total Gate Charge
C
rss
Q
V
= −4.5 V
= −10 V
nC
G(TOT)
GS
V
I
= −48 V,
DS
D
= −17 A
V
83
GS
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Plateau Voltage
Q
4
G(TH)
Q
13
GS
GD
GP
V
GS
= −10 V, V = −48 V,
DS
I
= −17 A
D
Q
V
27
3.5
V
SWITCHING CHARACTERISTICS (Notes 4)
Turn−On Delay Time
Rise Time
t
15
37
54
77
ns
d(on)
t
r
V
V
= −10 V, V = −48 V,
DS
GS
D
I
= −17 A, R = 2.5 W
G
Turn−Off Delay Time
Fall Time
t
d(off)
t
f
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
= 0 V,
= −17 A
T = 25°C
−0.79
−0.65
41
−1.0
V
SD
GS
J
I
S
T = 125°C
J
Reverse Recovery Time
Charge Time
t
ns
RR
t
t
22
a
V
GS
= 0 V, dl /dt = 100 A/ms,
s
I = −17 A
s
Discharge Time
19
b
Reverse Recovery Charge
Q
50
nC
RR
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
www.onsemi.com
2
NTMFS5113PL
TYPICAL CHARACTERISTICS
60.0
50.0
40.0
30.0
20.0
10.0
0.0
120.0
V
DS
= −10 V
T = 25°C
J
110.0
100.0
90.0
80.0
70.0
60.0
50.0
40.0
30.0
20.0
10.0
0.0
−6 V to −10 V
−4.0 V
−3.6 V
T = 25°C
J
T = −55°C
T = 125°C
−3.2 V
= −2.8 V
4.0
J
J
V
GS
0.0
1.0
2.0
3.0
5.0
1
2
3
4
5
6
−V , DRAIN−TO−SOURCE VOLTAGE (V)
DS
−V , GATE−TO−SOURCE VOLTAGE (V)
GS
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
0.020
0.018
0.016
0.014
0.012
0.010
0.050
0.045
0.040
0.035
0.030
0.025
0.020
0.015
0.010
I
= −17 A
T = 25°C
J
D
T = 25°C
J
V
GS
= −4.5 V
V
GS
= −10 V
4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0
0
10 20 30 40 50 60 70 80 90 100
−I , DRAIN CURRENT (A)
−V , GATE−TO−SOURCE VOLTAGE (V)
GS
D
Figure 3. On−Resistance vs. Gate−to−Source
Figure 4. On−Resistance vs. Drain Current and
Voltage
Gate Voltage
100000
10000
1000
2.10
2.00
1.90
1.80
1.70
1.60
1.50
1.40
1.30
1.20
1.10
1.00
0.90
0.80
V
GS
= 0 V
V
I
= −10 V
= −17 A
GS
D
T = 150°C
J
T = 125°C
J
0.70
0.60
100
−50 −25
0
25
50
75
100 125 150 175
10
20
30
40
50
60
T , JUNCTION TEMPERATURE (°C)
J
−V , DRAIN−TO−SOURCE VOLTAGE (V)
DS
Figure 5. On−Resistance Variation with
Figure 6. Drain−to−Source Leakage Current
Temperature
vs. Voltage
www.onsemi.com
3
NTMFS5113PL
TYPICAL CHARACTERISTICS
6000
5000
4000
3000
2000
1000
0
10.0
V
= 0 V
GS
Q
T
9.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0.0
T = 25°C
C
J
iss
f = 1 MHz
Q
gs
Q
gd
C
oss
V
I
= −48 A
= −17 A
DS
D
C
rss
T = 25°C
70
J
0
10
20
30
40
50
60
0
10
20
30
40
50
60
80
90
−V , DRAIN−TO−SOURCE VOLTAGE (V)
DS
Q , TOTAL GATE CHARGE (nC)
g
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source Voltage vs. Total
Charge
1000.0
100.0
10.0
120
110
100
90
80
70
60
50
40
30
20
10
0
V
= 0 V
GS
t
t
d(off)
T = 25°C
J
f
t
r
t
d(on)
V
V
= −48 V
= −10 V
= −17 A
DD
GS
I
D
1.0
1
10
R , GATE RESISTANCE (W)
100
0.00 0.10 0.20 0.30 0.40 0.50 0.60 0.70 0.80 0.901.00
−V , SOURCE−TO−DRAIN VOLTAGE (V)
SD
G
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
1000
100
10
100
10
1
10 ms
V
≤ −10 V
100 ms
GS
Single Pulse
= 25°C
10 ms
T
C
1 ms
T
= 25°C
J(initial)
T
= 125°C
J(initial)
dc
1
0.1
0.01
R
Limit
DS(on)
Thermal Limit
Package Limit
0.1
1
10
100
1.00E−05
1.00E−04
1.00E−03
1.00E−02
T , TIME IN AVALANCHE (s)
AV
−V , DRAIN−TO−SOURCE VOLTAGE (V)
DS
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Avalanche Characteristics
www.onsemi.com
4
NTMFS5113PL
TYPICAL CHARACTERISTICS
100
10
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
1
0.01
0.1
Single Pulse
0.01
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (sec)
Figure 13. Thermal Response
DEVICE ORDERING INFORMATION
Device
†
Marking
Package
Shipping
NTMFS5113PLT1G
V5113L
DFN5
(Pb−Free)
1500 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
www.onsemi.com
5
NTMFS5113PL
PACKAGE DIMENSIONS
DFN5 5x6, 1.27P
(SO−8FL)
CASE 488AA
ISSUE N
2 X
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
0.20
C
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
BURRS.
D
A
2
B
E
2 X
D1
MILLIMETERS
0.20
C
DIM
A
A1
b
c
D
D1
D2
E
E1
E2
e
G
K
L
L1
M
MIN
0.90
0.00
0.33
0.23
5.00
4.70
3.80
6.00
5.70
3.45
NOM
1.00
−−−
0.41
0.28
5.15
4.90
4.00
6.15
MAX
1.10
0.05
0.51
0.33
5.30
5.10
4.20
6.30
6.10
3.85
4 X
q
E1
2
c
A1
5.90
3.65
1
2
3
4
1.27 BSC
0.575
1.35
0.575
0.125 REF
3.40
0.51
1.20
0.51
0.71
1.50
0.71
TOP VIEW
C
SEATING
PLANE
DETAIL A
0.10
0.10
C
C
3.00
0
3.80
q
−−−
12
A
_
_
RECOMMENDED
SOLDERING FOOTPRINT*
STYLE 1:
PIN 1. SOURCE
2. SOURCE
3. SOURCE
4. GATE
2X
SIDE VIEW
DETAIL A
0.495
4.560
2X
5. DRAIN
1.530
8X b
A B
0.10
0.05
C
c
e/2
e
2X
0.475
L
3.200
1.330
1
4
4.530
K
2X
0.905
E2
PIN 5
(EXPOSED PAD)
M
L1
1
0.965
4X
D2
BOTTOM VIEW
G
1.000
1.270
PITCH
DIMENSIONS: MILLIMETERS
4X
0.750
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
N. American Technical Support: 800−282−9855 Toll Free
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Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
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For additional information, please contact your local
Sales Representative
◊
NTMFS5113PL/D
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