NTMFS5C604NL [ONSEMI]
Power MOSFET;
| 型号： | NTMFS5C604NL |
| 厂家： | 
ONSEMI |
| 描述： | Power MOSFET |
| 文件： | 总6页 (文件大小：78K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NTMFS5C604NL
Power MOSFET
60 V, 1.2 mW, 287 A, Single N−Channel
Features
• Small Footprint (5x6 mm) for Compact Design
• Low R
to Minimize Conduction Losses
• Low Q and Capacitance to Minimize Driver Losses
DS(on)
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G
• These Devices are Pb−Free and are RoHS Compliant
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
1.2 mW @ 10 V
1.7 mW @ 4.5 V
60 V
287 A
Parameter
Drain−to−Source Voltage
Symbol
Value
60
Unit
V
V
DSS
Gate−to−Source Voltage
V
GS
20
V
D (5)
Continuous Drain
Current R
(Notes 1, 3)
T
= 25°C
= 100°C
= 25°C
I
287
203
200
100
40
A
C
D
q
JC
T
C
Steady
State
Power Dissipation
T
C
P
W
A
D
R
(Note 1)
q
JC
G (4)
T
C
= 100°C
Continuous Drain
Current R
T = 25°C
A
I
D
q
JA
S (1,2,3)
N−CHANNEL MOSFET
T = 100°C
A
28
(Notes 1, 2, 3)
Steady
State
Power Dissipation
T = 25°C
A
P
3.9
1.9
900
W
D
R
(Notes 1 & 2)
q
JA
T = 100°C
A
MARKING
DIAGRAM
Pulsed Drain Current
T = 25°C, t = 10 ms
I
DM
A
A
p
Operating Junction and Storage Temperature
T , T
−55 to
+175
°C
D
J
stg
1
S
S
S
G
D
D
DFN5
(SO−8FL)
CASE 488AA
STYLE 1
5C604L
AYWZZ
Source Current (Body Diode)
I
S
203
776
A
Single Pulse Drain−to−Source Avalanche
E
AS
mJ
Energy (I
= 22 A)
L(pk)
D
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
260
°C
L
5C604L = Specific Device Code
A
Y
= Assembly Location
= Year
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
W
ZZ
= Work Week
= Lot Traceability
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Value
Unit
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
Junction−to−Case − Steady State
R
0.75
39
°C/W
q
q
JC
Junction−to−Ambient − Steady State (Note 2)
R
JA
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2
2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
© Semiconductor Components Industries, LLC, 2016
1
Publication Order Number:
January, 2016 − Rev. 3
NTMFS5C604NL/D
NTMFS5C604NL
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
V
GS
= 0 V, I = 250 mA
60
V
(BR)DSS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/
22.9
(BR)DSS
mV/°C
T
J
Zero Gate Voltage Drain Current
I
V
V
= 0 V,
= 60 V
T = 25°C
10
DSS
GS
DS
J
mA
T = 125°C
J
250
100
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
I
V
= 0 V, V = 20 V
nA
GSS
DS
GS
GS
V
V
= V , I = 250 mA
1.2
2.0
V
GS(TH)
DS
D
Threshold Temperature Coefficient
Drain−to−Source On Resistance
V
/T
−5.9
0.93
1.25
180
mV/°C
GS(TH)
J
R
V
= 10 V
I
I
= 50 A
= 50 A
1.2
1.7
DS(on)
GS
D
mW
V
GS
= 4.5 V
D
Forward Transconductance
g
FS
V
= 15 V, I = 50 A
S
DS
D
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
C
8900
3750
40
ISS
Output Capacitance
C
OSS
C
RSS
V
= 0 V, f = 1 MHz, V = 25 V
pF
GS
DS
Reverse Transfer Capacitance
Total Gate Charge
Q
Q
V
GS
= 4.5 V, V = 30 V; I = 50 A
52
G(TOT)
G(TOT)
DS
D
Total Gate Charge
V
GS
= 10 V, V = 30 V; I = 50 A
120
6.4
DS
D
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Plateau Voltage
Q
G(TH)
nC
V
Q
21.4
12.7
2.8
GS
GD
GP
V
GS
= 4.5 V, V = 30 V; I = 50 A
DS D
Q
V
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time
t
21.8
79.1
57.8
81.3
d(ON)
Rise Time
t
r
V
= 4.5 V, V = 30 V,
DS
GS
ns
V
I
D
= 50 A, R = 2.5 W
G
Turn−Off Delay Time
t
d(OFF)
Fall Time
t
f
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
T = 25°C
0.78
0.64
98
1.2
SD
J
V
= 0 V,
= 50 A
GS
I
S
T = 125°C
J
Reverse Recovery Time
Charge Time
t
RR
t
45
ns
a
V
= 0 V, dIS/dt = 100 A/ms,
GS
I
S
= 50 A
Discharge Time
t
b
53
Reverse Recovery Charge
Q
190
nC
RR
4. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
5. Switching characteristics are independent of operating junction temperatures.
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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2
NTMFS5C604NL
TYPICAL CHARACTERISTICS
200
180
160
140
120
100
80
200
180
10 V to 3.4 V
V
DS
≤ 10 V
3.2 V
160
140
3.0 V
120
100
T = 25°C
80
60
40
V
= 2.8 V
J
GS
60
40
T = 125°C
J
20
0
20
0
T = −55°C
J
0
0.5
1.0
1.5
2.0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5 4.0
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
4
3
2
1
2.0
1.5
T = 25°C
J
T = 25°C
D
J
I
= 50 A
V
= 4.5 V
= 10 V
GS
V
GS
1.0
0.5
0
2
3
4
5
6
7
8
9
10
10
30
50
70
90
110
130
150
V
GS
, GATE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
2.2
100
10
2.0
1.8
1.6
1.4
1.2
1.0
V
I
= 10 V
= 40 A
GS
T = 125°C
J
D
T = 85°C
J
1
0.8
0.6
0.1
−50 −25
0
25
50
75
100 125 150 175
5
15
V , DRAIN−TO−SOURCE VOLTAGE (V)
DS
25
35
45
55
T , JUNCTION TEMPERATURE (°C)
J
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
NTMFS5C604NL
TYPICAL CHARACTERISTICS
100K
10K
10
8
30
25
20
Q
T
C
ISS
C
OSS
1000
100
6
V
= 0 V
15
10
GS
C
RSS
Q
T = 25°C
GD
J
4
Q
GS
f = 1 MHz
V
DS
= 30 V
T = 25°C
J
2
0
10
1
I
D
= 50 A
5
0
0
10
20
30
40
50
60
0
20
40
60
80
100
120
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Q , TOTAL GATE CHARGE (nC)
G
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
1000
100
t
d(off)
t
t
f
r
t
d(on)
10
10
1
V
= 4.5 V
= 30 V
= 50 A
GS
V
DD
T = 125°C
T = 25°C
T = −55°C
J
J
J
I
D
1
1
10
R , GATE RESISTANCE (W)
100
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
G
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
100
1000
100
T
V
= 25°C
≤ 10 V
C
GS
0.01 ms
0.1 ms
T
= 25°C
J(initial)
T
= 100°C
J(initial)
1 ms
dc
10
10 ms
10
1
R
Limit
DS(on)
Thermal Limit
Package Limit
1
0.1
1
10
100
1E−04
1E−03
TIME IN AVALANCHE (s)
1E−02
V
DS
(V)
Figure 11. Safe Operating Area
Figure 12. IPEAK vs. Time in Avalanche
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4
NTMFS5C604NL
100
10
50% Duty Cycle
20%
10%
5%
2%
1%
2
1
NTMFS5C604NL 650 mm , 2 oz., Cu Single Layer Pad
0.1
Single Pulse
0.0001 0.001
0.01
0.000001 0.00001
0.01
0.1
1
10
100
1000
PULSE TIME (sec)
Figure 13. Thermal Characteristics
DEVICE ORDERING INFORMATION
Device
†
Marking
Package
Shipping
NTMFS5C604NLT1G
5C604L
DFN5
(Pb−Free)
1500 / Tape & Reel
5000 / Tape & Reel
NTMFS5C604NLT3G
5C604L
DFN5
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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5
NTMFS5C604NL
PACKAGE DIMENSIONS
DFN5 5x6, 1.27P
(SO−8FL)
CASE 488AA
ISSUE M
2 X
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
BURRS.
0.20
C
D
A
2
B
E
2 X
D1
MILLIMETERS
0.20
C
DIM
A
A1
b
c
D
D1
D2
E
E1
E2
e
G
K
L
L1
M
MIN
0.90
0.00
0.33
0.23
5.00
4.70
3.80
6.00
5.70
3.45
NOM
1.00
−−−
0.41
0.28
5.15
4.90
4.00
6.15
MAX
1.10
0.05
0.51
0.33
5.30
5.10
4.20
6.30
6.10
3.85
4 X
E1
2
q
c
A1
5.90
3.65
1
2
3
4
1.27 BSC
0.575
1.35
0.575
0.125 REF
3.40
0.51
1.20
0.51
0.71
1.50
0.71
TOP VIEW
C
SEATING
PLANE
DETAIL A
0.10
0.10
C
C
3.00
0
3.80
12
q
−−−
A
_
_
STYLE 1:
PIN 1. SOURCE
2. SOURCE
3. SOURCE
4. GATE
SIDE VIEW
DETAIL A
5. DRAIN
RECOMMENDED
SOLDERING FOOTPRINT*
8X b
A B
0.10
0.05
C
c
e/2
e
2X
0.495
4.560
L
2X
1
4
1.530
K
3.200
1.330
E2
PIN 5
4.530
M
(EXPOSED PAD)
L1
2X
0.905
D2
BOTTOM VIEW
G
1
0.965
4X
1.000
1.270
PITCH
4X
0.750
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and the
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed
at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation
or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets
and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each
customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended,
or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which
the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or
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expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim
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PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
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USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
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Phone: 81−3−5817−1050
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Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
For additional information, please contact your local
Sales Representative
NTMFS5C604NL/D
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