NTMFS5C670NT1G [ONSEMI]
Single N−Channel Power MOSFET 60V, 71A, 7.0mΩ;型号: | NTMFS5C670NT1G |
厂家: | ONSEMI |
描述: | Single N−Channel Power MOSFET 60V, 71A, 7.0mΩ |
文件: | 总7页 (文件大小:285K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi
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regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
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Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
MOSFET – Power, Single,
N-Channel
60 V, 7.0 mW, 71 A
NTMFS5C670N
Features
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• Small Footprint (5x6 mm) for Compact Design
• Low R
to Minimize Conduction Losses
DS(on)
• Low Q and Capacitance to Minimize Driver Losses
V
R
MAX
I MAX
D
G
(BR)DSS
DS(ON)
• These Devices are Pb−Free and are RoHS Compliant
60 V
7.0 mW @ 10 V
71 A
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Parameter
Drain−to−Source Voltage
Symbol
Value
60
Unit
V
D (5)
V
DSS
Gate−to−Source Voltage
V
GS
20
V
Continuous Drain
Current R
T
= 25°C
= 100°C
= 25°C
I
71
A
C
D
G (4)
q
JC
T
C
50
(Notes 1, 3)
Steady
State
Power Dissipation
T
C
P
61
W
A
S (1,2,3)
N−CHANNEL MOSFET
D
R
(Note 1)
q
JC
T
C
= 100°C
31
Continuous Drain
Current R
T = 25°C
A
I
D
17
q
JA
T = 100°C
A
12
(Notes 1, 2, 3)
MARKING
DIAGRAM
Steady
State
Power Dissipation
T = 25°C
A
P
3.6
1.8
440
W
D
R
(Notes 1 & 2)
q
JA
D
T = 100°C
A
1
S
S
S
G
D
D
Pulsed Drain Current
T = 25°C, t = 10 ms
I
DM
A
A
p
DFN5
(SO−8FL)
CASE 488AA
STYLE 1
5C670N
AYWZZ
Operating Junction and Storage Temperature
T , T
−55 to
+175
°C
J
stg
D
Source Current (Body Diode)
I
68
A
S
5C670N = Specific Device Code
Single Pulse Drain−to−Source Avalanche
E
166
mJ
AS
A
Y
= Assembly Location
= Year
Energy (I
= 3.6 A)
L(pk)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
260
°C
L
W
ZZ
= Work Week
= Lot Traceability
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
ORDERING INFORMATION
See detailed ordering, marking and shipping information on
page 5 of this data sheet.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Value
2.4
Unit
Junction−to−Case − Steady State
Junction−to−Ambient − Steady State (Note 2)
R
°C/W
q
JC
R
41
q
JA
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2
2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
© Semiconductor Components Industries, LLC, 2019
1
Publication Order Number:
December, 2019 − Rev. 0
NTMFS5C670N/D
NTMFS5C670N
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
V
GS
= 0 V, I = 250 mA
60
V
(BR)DSS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/
26.2
(BR)DSS
mV/°C
T
J
Zero Gate Voltage Drain Current
I
V
= 0 V,
T = 25 °C
10
DSS
GS
DS
J
V
= 60 V
mA
T = 125°C
J
250
100
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
Threshold Temperature Coefficient
Drain−to−Source On Resistance
Forward Transconductance
Gate Resistance
I
V
= 0 V, V = 20 V
nA
GSS
DS
GS
V
V
= V , I = 53 mA
2.0
4.0
7.0
V
mV/°C
mW
S
GS(TH)
GS
DS
D
V
/T
J
−7.8
5.6
82
GS(TH)
R
V
GS
= 10 V
I = 11 A
D
DS(on)
g
FS
V
= 15 V, I = 35 A
DS D
R
T = 25°C
A
1.2
W
G
CHARGES AND CAPACITANCES
Input Capacitance
C
1035
680
8.5
ISS
Output Capacitance
C
V
V
= 0 V, f = 1 MHz, V = 30 V
pF
OSS
RSS
GS
DS
Reverse Transfer Capacitance
Total Gate Charge
C
Q
14.4
3.2
G(TOT)
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Q
G(TH)
nC
V
Q
5.3
= 10 V, V = 30 V; I = 11 A
GS
GD
GP
GS
DS
D
Q
V
1.5
Plateau Voltage
4.6
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time
t
10
2.7
16
d(ON)
Rise Time
t
r
V
= 10 V, V = 30 V,
DS
GS
D
ns
V
I
= 11 A, R = 2.5 W
G
Turn−Off Delay Time
t
d(OFF)
Fall Time
t
3.3
f
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
T = 25°C
0.81
0.67
40
1.2
SD
RR
J
V
S
= 0 V,
GS
I
= 11 A
T = 125°C
J
Reverse Recovery Time
Charge Time
t
t
a
20
ns
V
GS
= 0 V, dI /dt = 100 A/ms,
S
I
S
= 5 A
Discharge Time
t
b
20
Reverse Recovery Charge
Q
31
nC
RR
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
5. Switching characteristics are independent of operating junction temperatures.
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2
NTMFS5C670N
TYPICAL CHARACTERISTICS
70
60
50
40
30
20
10
0
70
60
V
= 10 V
GS
to 6.0 V
50
40
30
20
10
V
= 5.0 V
GS
T = 125°C
J
T = −55°C
J
V
= 4.5 V
T = 25°C
GS
J
V
GS
= 4.0 V
4
0
0
1
2
3
4
5
6
7
0
1
2
3
5
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
15
8
T = 25°C
J
14
13
12
11
10
9
T = 25°C
D
J
I
= 11 A
7
6
5
4
V
GS
= 10 V
8
7
6
5
10
20
30
40
50
60
70
5
6
7
8
9
10
V
GS
, GATE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 3. On−Resistance vs. Gate−to−Source
Figure 4. On−Resistance vs. Drain Current and
Voltage
Gate Voltage
1000000
100000
V
= 10 V
GS
2
1.5
1
ID = 11 A
T
= 175°C
J
10000
1000
100
10
T
= 125°C
= 85°C
J
T
J
T
= 25°C
J
0.5
1
−50 −25
0
25
50
75
100 125 150 175
5
15
25
35
45
55
T , JUNCTION TEMPERATURE (5C)
J
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Figure 6. Drain−to−Source Leakage Current
Temperature
vs. Voltage
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3
NTMFS5C670N
TYPICAL CHARACTERISTICS
10
10000
1000
100
10
V
DS
= 30 V
9
8
7
6
5
4
3
2
1
0
I
D
= 11 A
Ciss
T = 25°C
J
Coss
Q
Q
GD
GS
V
GS
= 0 V
T = 25°C
J
f = 1 MHz
Crss
1
0
10
20
30
40
50
60
0
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Q , TOTAL GATE CHARGE (nC)
G
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
100
10
1
1000
100
V
GS
= 0 V
V
V
= 10 V
= 30 V
= 11 A
GS
DS
I
D
td(off)
tf
T = 125°C
J
T = 25°C
10
1
J
td(on)
tr
T = −55°C
J
0.1
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
1
10
100
R , GATE RESISTANCE (W)
G
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
1000
100
10
100
10
T
V
= 25°C
Package Limit
C
≤ 10 V
GS
Single Pulse
R
Limit
DS(on)
500 ms
T = 25°C
J
T = 100°C
J
Thermal Limit
10 ms
1
1
1 ms
0.1
0.1
0.1
1
10
100
1E−5
1E−4
1E−3
1E−2
V
DS
(V)
TIME IN AVALANCHE (s)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Drain Current vs. Time in
Avalanche
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4
NTMFS5C670N
100
10
50% Duty Cycle
20%
10%
5%
1
2%
1%
0.1
0.01
Single Pulse
0.00001 0.0001
0.000001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (sec)
Figure 13. Thermal Characteristics
DEVICE ORDERING INFORMATION
Device
†
Marking
Package
Shipping
NTMFS5C670NT1G
5C670N
DFN5
(Pb−Free)
1500 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
www.onsemi.com
5
NTMFS5C670N
PACKAGE DIMENSIONS
DFN5 5x6, 1.27P
(SO−8FL)
CASE 488AA
ISSUE N
2 X
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
0.20
C
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
BURRS.
D
A
2
B
E
2 X
D1
MILLIMETERS
0.20
C
DIM
A
A1
b
c
D
D1
D2
E
E1
E2
e
G
K
L
L1
M
MIN
0.90
0.00
0.33
0.23
5.00
4.70
3.80
6.00
5.70
3.45
NOM
1.00
−−−
0.41
0.28
5.15
4.90
4.00
6.15
MAX
1.10
0.05
0.51
0.33
5.30
5.10
4.20
6.30
6.10
3.85
4 X
q
E1
2
c
A1
5.90
3.65
1
2
3
4
1.27 BSC
0.575
1.35
0.575
0.125 REF
3.40
0.51
1.20
0.51
0.71
1.50
0.71
TOP VIEW
C
SEATING
DETAIL A
PLANE
0.10
0.10
C
C
3.00
0
3.80
q
−−−
12
A
_
_
RECOMMENDED
STYLE 1:
SOLDERING FOOTPRINT*
PIN 1. SOURCE
2. SOURCE
3. SOURCE
4. GATE
2X
0.495
SIDE VIEW
DETAIL A
4.560
2X
5. DRAIN
1.530
8X b
A B
0.10
0.05
C
c
e/2
e
2X
0.475
L
3.200
1.330
1
4
4.530
K
2X
0.905
E2
PIN 5
(EXPOSED PAD)
M
1
L1
0.965
4X
D2
BOTTOM VIEW
1.000
G
1.270
PITCH
DIMENSIONS: MILLIMETERS
4X
0.750
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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