NTMFS5C673NT1G [ONSEMI]

Single N−Channel Power MOSFET 60V, 50A, 10.7mΩ;
NTMFS5C673NT1G
型号: NTMFS5C673NT1G
厂家: ONSEMI    ONSEMI
描述:

Single N−Channel Power MOSFET 60V, 50A, 10.7mΩ

文件: 总7页 (文件大小:216K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
MOSFET – Power, Single,  
N-Channel  
60 V, 10.7 mW, 50 A  
NTMFS5C673N  
Features  
www.onsemi.com  
Small Footprint (5x6 mm) for Compact Design  
Low R  
to Minimize Conduction Losses  
DS(on)  
Low Q and Capacitance to Minimize Driver Losses  
G
V
R
MAX  
I MAX  
D
(BR)DSS  
DS(ON)  
These Devices are PbFree and are RoHS Compliant  
60 V  
10.7 mW @ 10 V  
50 A  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Parameter  
DraintoSource Voltage  
Symbol  
Value  
60  
Unit  
V
D (5)  
V
DSS  
GatetoSource Voltage  
V
GS  
20  
V
Continuous Drain  
Current R  
T
= 25°C  
= 100°C  
= 25°C  
I
50  
A
C
D
G (4)  
q
JC  
T
C
35  
(Notes 1, 3)  
Steady  
State  
Power Dissipation  
T
C
P
46  
W
A
D
S (1,2,3)  
NCHANNEL MOSFET  
R
(Note 1)  
q
JC  
T
C
= 100°C  
23  
Continuous Drain  
Current R  
T = 25°C  
A
I
D
14  
q
JA  
MARKING  
DIAGRAM  
T = 100°C  
A
10  
(Notes 1, 2, 3)  
Steady  
State  
Power Dissipation  
T = 25°C  
A
P
3.6  
1.8  
290  
W
D
D
R
(Notes 1 & 2)  
q
JA  
1
T = 100°C  
A
S
S
S
G
D
D
DFN5  
(SO8FL)  
CASE 488AA  
STYLE 1  
5C673N  
AYWZZ  
Pulsed Drain Current  
T = 25°C, t = 10 ms  
I
DM  
A
A
p
Operating Junction and Storage Temperature  
T , T  
55 to  
+175  
°C  
J
stg  
D
Source Current (Body Diode)  
I
52  
81  
A
S
5C673N = Specific Device Code  
Single Pulse DraintoSource Avalanche  
E
AS  
mJ  
A
= Assembly Location  
= Year  
Energy (I  
= 2 A)  
L(pk)  
Y
W
ZZ  
= Work Week  
= Lot Traceability  
Lead Temperature for Soldering Purposes  
(1/8from case for 10 s)  
T
L
260  
°C  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
ORDERING INFORMATION  
See detailed ordering, marking and shipping information in the  
package dimensions section on page 5 of this data sheet.  
THERMAL RESISTANCE MAXIMUM RATINGS  
Parameter  
Symbol  
Value  
3.2  
Unit  
JunctiontoCase Steady State  
JunctiontoAmbient Steady State (Note 2)  
R
°C/W  
q
JC  
R
42  
q
JA  
1. The entire application environment impacts the thermal resistance values shown,  
they are not constants and are only valid for the particular conditions noted.  
2
2. Surfacemounted on FR4 board using a 650 mm , 2 oz. Cu pad.  
3. Maximum current for pulses as long as 1 second is higher but is dependent  
on pulse duration and duty cycle.  
© Semiconductor Components Industries, LLC, 2019  
1
Publication Order Number:  
December, 2019 Rev. 0  
NTMFS5C673N/D  
 
NTMFS5C673N  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)  
J
Parameter  
Symbol  
Test Condition  
Min  
Typ  
Max  
Unit  
OFF CHARACTERISTICS  
DraintoSource Breakdown Voltage  
V
V
GS  
= 0 V, I = 250 mA  
60  
V
(BR)DSS  
D
DraintoSource Breakdown Voltage  
Temperature Coefficient  
V
/
29  
(BR)DSS  
mV/°C  
T
J
Zero Gate Voltage Drain Current  
I
V
= 0 V,  
T = 25°C  
10  
DSS  
GS  
DS  
J
V
= 60 V  
mA  
T = 125°C  
J
250  
100  
GatetoSource Leakage Current  
ON CHARACTERISTICS (Note 4)  
Gate Threshold Voltage  
I
V
= 0 V, V = 20 V  
nA  
GSS  
DS  
GS  
V
V
= V , I = 35 mA  
2.0  
4.0  
V
mV/°C  
mW  
S
GS(TH)  
GS  
DS  
D
Threshold Temperature Coefficient  
DraintoSource On Resistance  
Forward Transconductance  
Gate Resistance  
V
/T  
J
8.5  
8.9  
37  
GS(TH)  
R
V
GS  
= 10 V  
I = 7 A  
D
10.7  
DS(on)  
g
FS  
V
= 15 V, I = 25 A  
DS D  
R
T = 25°C  
A
1.2  
W
G
CHARGES, CAPACITANCES & GATE RESISTANCE  
Input Capacitance  
C
680  
465  
6.0  
9.6  
2.3  
3.6  
0.9  
4.6  
ISS  
Output Capacitance  
C
V
= 0 V, f = 1 MHz, V = 30 V  
pF  
OSS  
RSS  
GS  
DS  
Reverse Transfer Capacitance  
Total Gate Charge  
C
Q
G(TOT)  
Threshold Gate Charge  
GatetoSource Charge  
GatetoDrain Charge  
Plateau Voltage  
Q
G(TH)  
nC  
V
Q
V
= 10 V, V = 30 V; I = 7 A  
GS  
GD  
GP  
GS  
DS  
D
Q
V
SWITCHING CHARACTERISTICS (Note 5)  
TurnOn Delay Time  
t
8.4  
1.9  
d(ON)  
Rise Time  
t
r
V
= 10 V, V = 30 V,  
DS  
GS  
D
ns  
V
I
= 7 A, R = 2.5 W  
G
TurnOff Delay Time  
t
12.5  
2.8  
d(OFF)  
Fall Time  
t
f
DRAINSOURCE DIODE CHARACTERISTICS  
Forward Diode Voltage  
V
T = 25°C  
0.82  
0.67  
32  
1.2  
SD  
J
V
= 0 V,  
GS  
S
I
= 7 A  
T = 125°C  
J
Reverse Recovery Time  
Charge Time  
t
RR  
t
16  
ns  
a
V
GS  
= 0 V, dIs/dt = 100 A/ms,  
I
S
= 3 A  
Discharge Time  
t
16  
b
Reverse Recovery Charge  
Q
22  
nC  
RR  
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product  
performance may not be indicated by the Electrical Characteristics if operated under different conditions.  
4. Pulse Test: pulse width v 300 ms, duty cycle v 2%.  
5. Switching characteristics are independent of operating junction temperatures.  
www.onsemi.com  
2
 
NTMFS5C673N  
TYPICAL CHARACTERISTICS  
50  
50  
40  
30  
20  
V
GS  
= 10 V to 6.0 V  
40  
30  
20  
5.0 V  
T = 25°C  
J
4.5 V  
4.0 V  
10  
0
10  
0
T = 125°C  
J
T = 55°C  
J
0
1.0  
2.0  
3.0  
4.0  
5.0  
0
1
2
3
4
5
6
7
V
DS  
, DRAINTOSOURCE VOLTAGE (V)  
V
GS  
, GATETOSOURCE VOLTAGE (V)  
Figure 1. OnRegion Characteristics  
Figure 2. Transfer Characteristics  
12  
11  
10  
16  
15  
T = 25°C  
J
T = 25°C  
D
J
I
= 7 A  
14  
13  
12  
11  
10  
V
GS  
= 10 V  
9
8
7
9
8
5
6
7
8
9
10  
1
11  
21  
31  
41  
51  
V
GS  
, GATETOSOURCE VOLTAGE (V)  
I , DRAIN CURRENT (A)  
D
Figure 3. OnResistance vs. GatetoSource  
Figure 4. OnResistance vs. Drain Current and  
Voltage  
Gate Voltage  
1,000,000  
100,000  
V
= 10 V  
= 7 A  
GS  
2.0  
I
D
T = 175°C  
J
10,000  
1000  
100  
1.5  
1.0  
0.5  
T = 125°C  
J
T = 85°C  
J
T = 25°C  
J
10  
1
50 25  
0
25  
50  
75  
100 125 150 175  
5
15  
25  
35  
45  
55  
T , JUNCTION TEMPERATURE (°C)  
J
V
, DRAINTOSOURCE VOLTAGE (V)  
DS  
Figure 5. OnResistance Variation with  
Figure 6. DraintoSource Leakage Current  
Temperature  
vs. Voltage  
www.onsemi.com  
3
NTMFS5C673N  
TYPICAL CHARACTERISTICS  
10000  
10  
9
8
C
ISS  
1000  
100  
7
6
5
4
3
2
C
OSS  
Q
GD  
Q
GS  
10  
1
V
DS  
= 30 V  
C
V
= 0 V  
RSS  
GS  
T = 25°C  
J
T = 25°C  
J
1
0
I
D
= 7 A  
f = 1 MHz  
0
10  
20  
30  
40  
50  
60  
0
1
2
3
4
5
6
7
8
9
10  
V
DS  
, DRAINTOSOURCE VOLTAGE (V)  
Q , TOTAL GATE CHARGE (nC)  
G
Figure 7. Capacitance Variation  
Figure 8. GatetoSource vs. Total Charge  
100  
10  
V
GS  
= 0 V  
100  
t
t
d(off)  
10  
1
1
d(on)  
V
V
= 10 V  
= 30 V  
= 7 A  
GS  
t
t
f
DS  
I
D
T = 125°C  
J
T = 25°C  
J
T = 55°C  
J
r
0.1  
1
10  
R , GATE RESISTANCE (W)  
100  
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
V
SD  
, SOURCETODRAIN VOLTAGE (V)  
G
Figure 9. Resistive Switching Time Variation  
vs. Gate Resistance  
Figure 10. Diode Forward Voltage vs. Current  
100  
10  
1000  
100  
10  
1 ms  
500 ms  
10 ms  
T (initial)= 25°C  
J
T
V
= 25°C  
C
T (initial)= 100°C  
J
10 V  
GS  
1
Single Pulse  
1
R
Limit  
0.1  
DS(on)  
Thermal Limit  
Package Limit  
0.1  
0.01  
1.E06  
1.E05  
1.E04  
1.E03  
1.E02  
0.1  
1
10  
100  
V
DS  
, DRAINTOSOURCE VOLTAGE (V)  
T , TIME IN AVALANCHE (s)  
AV  
Figure 11. Maximum Rated Forward Biased  
Safe Operating Area  
Figure 12. Maximum Drain Current vs. Time in  
Avalanche  
www.onsemi.com  
4
NTMFS5C673N  
TYPICAL CHARACTERISTICS  
100  
10  
1
50% Duty Cycle  
20%  
10%  
5%  
2%  
1%  
0.1  
Single Pulse  
0.01  
0.000001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
100  
1000  
t, PULSE TIME (sec)  
Figure 13. Thermal Response  
DEVICE ORDERING INFORMATION  
Device  
Marking  
Package  
Shipping  
NTMFS5C673NT1G  
5C673N  
DFN5  
(PbFree)  
1500 / Tape & Reel  
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging  
Specifications Brochure, BRD8011/D.  
www.onsemi.com  
5
MECHANICAL CASE OUTLINE  
PACKAGE DIMENSIONS  
DFN5 5x6, 1.27P  
(SO8FL)  
CASE 488AA  
ISSUE N  
1
SCALE 2:1  
2 X  
DATE 25 JUN 2018  
NOTES:  
1. DIMENSIONING AND TOLERANCING PER  
ASME Y14.5M, 1994.  
0.20  
C
2. CONTROLLING DIMENSION: MILLIMETER.  
3. DIMENSION D1 AND E1 DO NOT INCLUDE  
MOLD FLASH PROTRUSIONS OR GATE  
BURRS.  
D
A
2
B
E
2 X  
D1  
MILLIMETERS  
0.20  
C
DIM  
A
A1  
b
c
D
D1  
D2  
E
E1  
E2  
e
G
K
L
L1  
M
MIN  
0.90  
0.00  
0.33  
0.23  
5.00  
4.70  
3.80  
6.00  
5.70  
3.45  
NOM  
1.00  
−−−  
0.41  
0.28  
5.15  
4.90  
4.00  
6.15  
MAX  
1.10  
0.05  
0.51  
0.33  
5.30  
5.10  
4.20  
6.30  
6.10  
3.85  
4 X  
q
E1  
2
c
A1  
5.90  
3.65  
1
2
3
4
1.27 BSC  
0.575  
1.35  
0.575  
0.125 REF  
3.40  
0.51  
1.20  
0.51  
0.71  
1.50  
0.71  
TOP VIEW  
C
SEATING  
DETAIL A  
PLANE  
0.10  
0.10  
C
C
3.00  
0
3.80  
q
−−−  
12  
A
_
_
GENERIC  
SIDE VIEW  
MARKING DIAGRAM*  
DETAIL A  
1
8X b  
A B  
XXXXXX  
AYWZZ  
0.10  
0.05  
C
c
e/2  
e
L
1
4
XXXXXX = Specific Device Code  
A
Y
= Assembly Location  
= Year  
K
RECOMMENDED  
SOLDERING FOOTPRINT*  
W
ZZ  
= Work Week  
= Lot Traceability  
E2  
2X  
PIN 5  
M
*This information is generic. Please refer to  
device data sheet for actual part marking.  
PbFree indicator, “G” or microdot “ G”,  
may or may not be present. Some products  
may not follow the Generic Marking.  
(EXPOSED PAD)  
L1  
0.495  
4.560  
2X  
1.530  
D2  
G
2X  
BOTTOM VIEW  
0.475  
3.200  
1.330  
4.530  
STYLE 1:  
STYLE 2:  
PIN 1. ANODE  
2. ANODE  
2X  
0.905  
PIN 1. SOURCE  
2. SOURCE  
3. SOURCE  
4. GATE  
1
3. ANODE  
4. NO CONNECT  
5. CATHODE  
0.965  
5. DRAIN  
4X  
1.000  
1.270  
PITCH  
DIMENSIONS: MILLIMETERS  
4X  
0.750  
*For additional information on our PbFree strategy and soldering  
details, please download the ON Semiconductor Soldering and  
Mounting Techniques Reference Manual, SOLDERRM/D.  
Electronic versions are uncontrolled except when accessed directly from the Document Repository.  
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.  
DOCUMENT NUMBER:  
DESCRIPTION:  
98AON14036D  
DFN5 5x6, 1.27P (SO8FL)  
PAGE 1 OF 1  
onsemi and  
are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves  
the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular  
purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation  
special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others.  
© Semiconductor Components Industries, LLC, 2018  
www.onsemi.com  
onsemi,  
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates  
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.  
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/PatentMarking.pdf. onsemi reserves the right to make changes at any time to any  
products or information herein, without notice. The information herein is provided “asis” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the  
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use  
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products  
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information  
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may  
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license  
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems  
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should  
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,  
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death  
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Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.  
ADDITIONAL INFORMATION  
TECHNICAL PUBLICATIONS:  
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onsemi Website: www.onsemi.com  
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For additional information, please contact your local Sales Representative at  
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