NTMFS6H800NT1G [ONSEMI]
单 N 沟道，功率 MOSFET，80V，203A，2.1mΩ;
| 型号： | NTMFS6H800NT1G |
| 厂家： | 
ONSEMI |
| 描述： | 单 N 沟道，功率 MOSFET，80V，203A，2.1mΩ |
| 文件： | 总7页 (文件大小：214K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MOSFET – Power, Single,
N-Channel
80 V, 2.1 mW, 203 A
NTMFS6H800N
Features
www.onsemi.com
• Small Footprint (5x6 mm) for Compact Design
• Low R
to Minimize Conduction Losses
DS(on)
• Low Q and Capacitance to Minimize Driver Losses
G
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
• These Devices are Pb−Free and are RoHS Compliant
80 V
2.1 mW @ 10 V
203 A
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Parameter
Drain−to−Source Voltage
Symbol
Value
80
Unit
V
D (5)
V
DSS
Gate−to−Source Voltage
V
GS
20
V
Continuous Drain
Current R
T
= 25°C
= 100°C
= 25°C
I
203
143
200
100
28
A
C
D
q
JC
G (4)
T
C
(Notes 1, 3)
Steady
State
Power Dissipation
T
C
P
W
A
D
R
(Note 1)
S (1,2,3)
N−CHANNEL MOSFET
q
JC
T
C
= 100°C
Continuous Drain
Current R
T = 25°C
A
I
D
q
JA
T = 100°C
A
20
(Notes 1, 2, 3)
Steady
State
MARKING
DIAGRAM
Power Dissipation
T = 25°C
A
P
3.8
1.9
900
W
D
R
(Notes 1 & 2)
q
JA
T = 100°C
A
D
Pulsed Drain Current
T = 25°C, t = 10 ms
I
DM
A
S
S
S
G
D
D
DFN5 (SO−8FL)
CASE 506EZ
A
p
6H800N
AYWZZ
Operating Junction and Storage Temperature
T , T
−55 to
°C
J
stg
+ 175
1
Source Current (Body Diode)
I
S
166
A
D
Single Pulse Drain−to−Source Avalanche
E
AS
1271
mJ
A
Y
= Assembly Location
= Year
Energy (I
= 16.1 A)
L(pk)
W
ZZ
= Work Week
= Lot Traceability
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
L
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Value
0.75
39
Unit
Junction−to−Case − Steady State
Junction−to−Ambient − Steady State (Note 2)
R
°C/W
q
JC
R
q
JA
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2
2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
© Semiconductor Components Industries, LLC, 2017
1
Publication Order Number:
April, 2021 − Rev. 2
NTMFS6H800N/D
NTMFS6H800N
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
V
GS
= 0 V, I = 250 mA
80
V
(BR)DSS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/
39
(BR)DSS
mV/°C
T
J
Zero Gate Voltage Drain Current
I
V
= 0 V,
T = 25 °C
10
DSS
GS
DS
J
V
= 80 V
mA
T = 125°C
J
250
100
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
I
V
= 0 V, V = 20 V
nA
GSS
DS
GS
GS
V
V
= V , I = 330 mA
2.0
4.0
V
GS(TH)
DS
D
Threshold Temperature Coefficient
Drain−to−Source On Resistance
V
/T
8.0
1.8
2.6
138
mV/°C
GS(TH)
J
R
V
= 10 V
I
I
= 50 A
= 50 A
2.1
3.5
DS(on)
GS
D
mW
V
= 6 V
GS
D
Forward Transconductance
g
FS
V
=15 V, I = 50 A
S
DS
D
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
C
5530
760
27
ISS
Output Capacitance
C
OSS
C
RSS
Q
OSS
pF
nC
V
V
= 0 V, f = 1 MHz, V = 40 V
GS
DS
Reverse Transfer Capacitance
Output Charge
116
85
Total Gate Charge
Q
G(TOT)
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Plateau Voltage
Q
15
G(TH)
nC
V
Q
26
= 10 V, V = 40 V; I = 50 A
GS
GD
GP
GS
DS
D
Q
V
16
4.8
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time
Rise Time
t
25
89
97
85
d(ON)
t
r
V
= 10 V, V = 64 V,
DS
GS
D
ns
V
I
= 50 A, R = 2.5 W
G
Turn−Off Delay Time
Fall Time
t
d(OFF)
t
f
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
T = 25°C
0.8
0.7
76
36
40
82
1.2
J
V
S
= 0 V,
= 50 A
GS
I
T = 125°C
J
Reverse Recovery Time
Charge Time
t
RR
t
a
ns
V
= 0 V, dI /dt = 100 A/ms,
S
GS
I
S
= 50 A
Discharge Time
t
b
Reverse Recovery Charge
Q
nC
RR
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
5. Switching characteristics are independent of operating junction temperatures.
www.onsemi.com
2
NTMFS6H800N
TYPICAL CHARACTERISTICS
350
350
300
250
200
150
100
50
5.5 V to 10 V
V
DS
= 10 V
5.0 V
4.5 V
300
250
200
150
T = 25°C
J
100
50
0
V
GS
= 4.0 V
7
T = 125°C
J
T = −55°C
J
0
0
1
2
3
4
5
6
8
2
3
4
5
6
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
4.0
40
35
30
25
20
15
10
T = 25°C
J
T = 25°C
D
J
I
= 50 A
3.5
3.0
2.5
2.0
V
= 6.0 V
= 10 V
GS
V
GS
1.5
1.0
5
0
3
4
5
6
7
8
9
10
0
50
100
150
200
250
300
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 3. On−Resistance vs. Gate−to−Source
Figure 4. On−Resistance vs. Drain Current and
Voltage
Gate Voltage
1M
100K
10K
1K
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
V
I
= 10 V
= 50 A
GS
T = 175°C
T = 150°C
J
J
D
T = 125°C
J
T = 85°C
J
100
T = 25°C
J
10
1
0.6
0.4
−50 −25
5
15
V
25
35
45
55
65
75
0
25
50
75 100 125 150 175
T , JUNCTION TEMPERATURE (°C)
J
, DRAIN−TO−SOURCE VOLTAGE (V)
DS
Figure 5. On−Resistance Variation with
Figure 6. Drain−to−Source Leakage Current
Temperature
vs. Voltage
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3
NTMFS6H800N
TYPICAL CHARACTERISTICS
10
10K
C
ISS
9
8
7
6
5
4
3
2
1K
100
10
C
OSS
Q
Q
GD
GS
V
= 40 V
V
= 0 V
DS
GS
T = 25°C
T = 25°C
J
J
C
RSS
1
0
I
D
= 50 A
f = 1 MHz
0
10
20
30
40
50
60
70
80
0
10
20
30
40
50
60
70
80
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Q , TOTAL GATE CHARGE (nC)
G
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source vs. Total Charge
1K
1K
100
10
V
GS
= 0 V
t
r
t
d(off)
100
t
f
T = 125°C
J
1
V
V
= 10 V
= 64 V
GS
t
DS
d(on)
I
D
= 50 A
T = −55°C
T = 25°C
J
J
0.1
10
1K
1
10
R , GATE RESISTANCE (W)
100
0.3
0.4
0.5
, SOURCE−TO−DRAIN VOLTAGE (V)
SD
0.6
0.7
0.8
0.9
1.0
V
G
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
1000
100
T
V
= 25°C
C
≤ 10 V
GS
Single Pulse
T (initial) = 25°C
J
100
10
10 ms
10
1
T (initial) = 100°C
J
0.5 ms
1 ms
10 ms
1
R
Limit
DS(on)
Thermal Limit
Package Limit
0.1
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1K
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
TIME IN AVALANCHE (s)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. IPEAK vs. Time in Avalanche
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4
NTMFS6H800N
TYPICAL CHARACTERISTICS
100
10
1
50% Duty Cycle
20%
10%
5%
2%
1%
0.1
Single Pulse
0.01
0.001
0.000001 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
t, PULSE TIME (sec)
Figure 13. Thermal Response
DEVICE ORDERING INFORMATION
Device
†
Marking
Package
Shipping
NTMFS6H800NT1G
6H800N
DFN5
(Pb−Free)
1500 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
www.onsemi.com
5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
DFN5 5x6, 1.27P (SO−8FL)
CASE 506EZ
ISSUE A
1
DATE 25 AUG 2021
SCALE 2:1
q
q
GENERIC
MARKING DIAGRAM*
1
XXXXXX
AYWZZ
XXXXXX = Specific Device Code
A
Y
= Assembly Location
= Year
W
ZZ
= Work Week
= Lot Traceability
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present. Some products
may not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON24855H
DFN5 5x6, 1.27P (SO−8FL)
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2018
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
ADDITIONAL INFORMATION
TECHNICAL PUBLICATIONS:
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