NTMFS6H824NLT1G [ONSEMI]
Power MOSFET 80V, 110A, 4.0 mOhm, Single N-Channel, SO8-FL.;
| 型号： | NTMFS6H824NLT1G |
| 厂家： | 
ONSEMI |
| 描述： | Power MOSFET 80V, 110A, 4.0 mOhm, Single N-Channel, SO8-FL. |
| 文件： | 总7页 (文件大小：221K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MOSFET - Power, Single
N-Channel
80 V, 4 mW, 110 A
NTMFS6H824NL
Features
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• Small Footprint (5x6 mm) for Compact Design
• Low R
to Minimize Conduction Losses
DS(on)
• Low Q and Capacitance to Minimize Driver Losses
G
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
• These Devices are Pb−Free and are RoHS Compliant
4 mW @ 10 V
80 V
110 A
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
5.2 mW @ 4.5 V
Parameter
Drain−to−Source Voltage
Symbol
Value
80
Unit
V
V
DSS
Gate−to−Source Voltage
V
GS
20
V
D (5,6)
Continuous Drain
Current R
T
= 25°C
= 100°C
= 25°C
I
110
78
A
C
D
q
JC
T
C
(Notes 1, 3)
Steady
State
Power Dissipation
T
C
P
116
58
W
A
D
G (4)
R
(Note 1)
q
JC
T
C
= 100°C
Continuous Drain
Current R
T = 25°C
A
I
D
20
S (1,2,3)
N−CHANNEL MOSFET
q
JA
T = 100°C
A
14
(Notes 1, 2, 3)
Steady
State
Power Dissipation
T = 25°C
A
P
3.8
1.9
722
W
D
R
(Notes 1, 2)
q
JA
T = 100°C
A
MARKING
DIAGRAM
Pulsed Drain Current
T = 25°C, t = 10 ms
I
DM
A
A
p
D
Operating Junction and Storage Temperature
Range
T , T
−55 to
°C
1
J
stg
S
S
S
G
D
D
+175
DFN5
(SO−8FL)
CASE 488AA
STYLE 1
6H824L
AYWZZ
Source Current (Body Diode)
I
S
96
A
Single Pulse Drain−to−Source Avalanche
E
AS
1081
mJ
D
Energy (I
= 7.0 A)
L(pk)
A
Y
W
ZZ
= Assembly Location
= Year
= Work Week
= Lot Traceability
Lead Temperature for Soldering Purposes
T
260
°C
L
(1/8″ from case for 10 s)
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
Parameter
Symbol
Value
1.3
Unit
Junction−to−Case − Steady State
Junction−to−Ambient − Steady State (Note 2)
R
°C/W
q
JC
R
40
q
JA
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2
2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
© Semiconductor Components Industries, LLC, 2019
1
Publication Order Number:
January, 2020 − Rev. 0
NTMFS6H824NL/D
NTMFS6H824NL
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
V
GS
= 0 V, I = 250 mA
80
V
(BR)DSS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/
34.4
(BR)DSS
mV/°C
T
J
Zero Gate Voltage Drain Current
I
V
= 0 V,
T = 25 °C
10
DSS
GS
DS
J
V
= 80 V
mA
T = 125°C
J
100
100
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
I
V
= 0 V, V = 20 V
nA
GSS
DS
GS
GS
V
V
= V , I = 140 mA
1.2
2.0
V
mV/°C
mW
mW
S
GS(TH)
DS
D
Threshold Temperature Coefficient
Drain−to−Source On Resistance
V
/T
J
−5.3
3.3
GS(TH)
R
V
GS
= 10 V
I
I
= 20 A
= 20 A
4
DS(on)
D
V
GS
= 4.5 V
4.1
5.2
D
Forward Transconductance
g
FS
V
DS
=8 V, I = 50 A
178
D
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
C
2900
366
15
52
5
ISS
Output Capacitance
C
OSS
C
RSS
V
= 0 V, f = 1 MHz, V = 40 V
pF
nC
GS
DS
Reverse Transfer Capacitance
Total Gate Charge
Q
V
GS
= 10 V, V = 40 V; I = 50 A
DS D
G(TOT)
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Plateau Voltage
Q
G(TH)
Q
8.7
9
GS
GD
GP
Q
V
V
GS
= 4.5 V, V = 40 V; I = 50 A
DS
D
3
V
Total Gate Charge
Q
25
nC
G(TOT)
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time
t
19
111
35
d(ON)
Rise Time
t
r
V
= 4.5 V, V = 64 V,
DS
GS
D
ns
V
I
= 50 A, R = 2.5 W
G
Turn−Off Delay Time
t
d(OFF)
Fall Time
t
11
f
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
T = 25°C
0.79
0.65
52
1.2
SD
RR
J
V
S
= 0 V,
GS
I
= 20 A
T = 125°C
J
Reverse Recovery Time
Charge Time
t
t
a
29
ns
V
= 0 V, dIS/dt = 100 A/ms,
GS
I
S
= 50 A
Discharge Time
t
b
23
Reverse Recovery Charge
Q
59
nC
RR
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
5. Switching characteristics are independent of operating junction temperatures.
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2
NTMFS6H824NL
TYPICAL CHARACTERISTICS
100
90
80
70
60
50
40
30
20
100
V
GS
= 10 V to 3.4 V
3.0 V
90
80
70
60
50
40
30
20
3.2 V
2.8 V
2.6 V
T = 25°C
J
10
0
10
0
T = 125°C
J
T = −55°C
J
0
1
2
3
4
5
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5 4.0
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
10
9
6
5
4
3
T = 25°C
D
J
T = 25°C
J
I
= 20 A
8
7
V
= 4.5 V
= 10 V
GS
6
V
5
GS
4
3
2
2
1
1
0
3
4
5
6
7
8
9
10
2
4
6
8
10
12
14
16
18
20
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 3. On−Resistance vs. Gate−to−Source
Figure 4. On−Resistance vs. Drain Current and
Voltage
Gate Voltage
1000
100
10
3.0
V
= 10 V
= 20 A
GS
I
D
2.5
2.0
1.5
T = 175°C
J
T = 150°C
J
T = 125°C
J
1
T = 85°C
J
0.1
1.0
0.5
T = 25°C
0.01
J
0.001
−50 −25
0
25
50
75 100 125 150 175
5
15
25
35
45
55
65
75
T , JUNCTION TEMPERATURE (°C)
J
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Figure 6. Drain−to−Source Leakage Current
Temperature
vs. Voltage
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3
NTMFS6H824NL
TYPICAL CHARACTERISTICS
10,000
1000
100
10
C
ISS
9
8
7
6
5
4
3
2
C
OSS
Q
Q
GD
GS
C
RSS
10
1
V
I
= 40 V
= 50 A
V
= 0 V
DS
GS
T = 25°C
D
J
1
0
T = 25°C
J
f = 1 MHz
0
10
20
30
40
50
60
70
80
0
5
10 15 20 25 30 35 40 45 50
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Q , TOTAL GATE CHARGE (nC)
G
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
t
V
= 4.5 V
= 64 V
= 50 A
d(off)
GS
V
GS
= 0 V
V
DS
I
t
r
t
f
D
10
100
t
d(on)
10
1
T = −55°C
T = 125°C T = 25°C
J
J
J
1
1
10
R , GATE RESISTANCE (W)
100
0.3
0.4
0.5
, SOURCE−TO−DRAIN VOLTAGE (V)
SD
0.6
0.7
0.8
0.9
1.0
V
G
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
1000
100
10
100
T
= 25°C
J(initial)
10 ms
T = 25°C
10
A
Single Pulse
100 ms
1 ms
10 ms
T
= 100°C
V
GS
≤ 10 V
J(initial)
1
R
Limit
DS(on)
Thermal Limit
Package Limit
0.1
1
0.1
1
10
100
1000
0.00001
0.0001
0.001
0.01
V
DS
, DRAIN−SOURCE VOLTAGE (V)
TIME IN AVALANCHE (s)
Figure 11. Safe Operating Area
Figure 12. Maximum Drain Current vs. Time in
Avalanche
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4
NTMFS6H824NL
TYPICAL CHARACTERISTICS
100
10
1
50% Duty Cycle
20%
10%
5%
2%
1%
0.1
Single Pulse
0.000001 0.00001
0.01
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (sec)
Figure 13. Thermal Characteristics
DEVICE ORDERING INFORMATION
Device
†
Marking
Package
Shipping
NTMFS6H824NLT1G
6H824L
DFN5
(Pb−Free)
1500 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
DFN5 5x6, 1.27P
(SO−8FL)
CASE 488AA
ISSUE N
1
SCALE 2:1
2 X
DATE 25 JUN 2018
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
0.20
C
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
BURRS.
D
A
2
B
E
2 X
D1
MILLIMETERS
0.20
C
DIM
A
A1
b
c
D
D1
D2
E
E1
E2
e
G
K
L
L1
M
MIN
0.90
0.00
0.33
0.23
5.00
4.70
3.80
6.00
5.70
3.45
NOM
1.00
−−−
0.41
0.28
5.15
4.90
4.00
6.15
MAX
1.10
0.05
0.51
0.33
5.30
5.10
4.20
6.30
6.10
3.85
4 X
q
E1
2
c
A1
5.90
3.65
1
2
3
4
1.27 BSC
0.575
1.35
0.575
0.125 REF
3.40
0.51
1.20
0.51
0.71
1.50
0.71
TOP VIEW
C
SEATING
DETAIL A
PLANE
0.10
0.10
C
C
3.00
0
3.80
q
−−−
12
A
_
_
GENERIC
SIDE VIEW
MARKING DIAGRAM*
DETAIL A
1
8X b
A B
XXXXXX
AYWZZ
0.10
0.05
C
c
e/2
e
L
1
4
XXXXXX = Specific Device Code
A
Y
= Assembly Location
= Year
K
RECOMMENDED
SOLDERING FOOTPRINT*
W
ZZ
= Work Week
= Lot Traceability
E2
2X
PIN 5
M
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present. Some products
may not follow the Generic Marking.
(EXPOSED PAD)
L1
0.495
4.560
2X
1.530
D2
G
2X
BOTTOM VIEW
0.475
3.200
1.330
4.530
STYLE 1:
STYLE 2:
PIN 1. ANODE
2. ANODE
2X
0.905
PIN 1. SOURCE
2. SOURCE
3. SOURCE
4. GATE
1
3. ANODE
4. NO CONNECT
5. CATHODE
0.965
5. DRAIN
4X
1.000
1.270
PITCH
DIMENSIONS: MILLIMETERS
4X
0.750
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON14036D
DFN5 5x6, 1.27P (SO−8FL)
PAGE 1 OF 1
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are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves
the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation
special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others.
© Semiconductor Components Industries, LLC, 2018
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
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information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
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and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
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