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NTMFSC006N12MC [ONSEMI]

N-Channel Dual CoolTM 56 PowerTrench® MOSFET 120 V, 92 A, 6.0mΩ;
NTMFSC006N12MC
型号： NTMFSC006N12MC
厂家： ONSEMI    ONSEMI
描述：

N-Channel Dual CoolTM 56 PowerTrench® MOSFET 120 V, 92 A, 6.0mΩ
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DATA SHEET  
www.onsemi.com  
MOSFET - Power, DUAL  
COOL) N-Channel, DFN8  
120 V, 6.1 mW, 92 A  
V
R
MAX  
I MAX  
D
(BR)DSS  
DS(ON)  
120 V  
6.1 mW @ 10 V  
92 A  
N−CHANNEL MOSFET  
NTMFSC006N12MC  
Features  
• Advanced Dual−sided Cooled Packaging  
• Ulra Low R  
DS(on)  
• MSL1 Robust Packaging Design  
Typical Applications  
• Primary DC−DC FET  
• Synchronous Rectifier  
• DC−DC Conversion  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Parameter  
Drain−to−Source Voltage  
Symbol  
Value  
120  
20  
Unit  
V
MARKING DIAGRAM  
V
DSS  
Gate−to−Source Voltage  
V
GS  
V
Continuous Drain Cur- Steady  
T
= 25°C  
= 100°C  
= 25°C  
I
92  
A
C
D
rent R  
(Notes 1, 3)  
State  
q
JC  
T
C
57  
Power Dissipation  
(Note 1)  
T
C
P
104  
41  
W
A
D
D
R
q
JC  
T
C
= 100°C  
DFN8 5x6.15  
CASE 506EG  
Continuous Drain  
Current R  
Steady  
State  
T = 25°C  
A
I
D
14  
q
JA  
T = 100°C  
A
9
(Notes 1, 2, 3)  
Power Dissipation  
T = 25°C  
A
P
2.7  
1.1  
1459  
+150  
86  
W
MARKING DIAGRAM  
R
(Notes 1, 2)  
q
JA  
T = 100°C  
A
3RAYWZ  
Pulsed Drain Current  
T
C
= 25°C, t = 10 ms  
I
DM  
A
°C  
A
p
Operating Junction / Storage Temperature Max  
Source Current (Body Diode)  
T , T  
J stg  
I
S
Single Pulse Drain−to−Source Avalanche  
E
AS  
114  
mJ  
Energy (I  
= 53 A)  
L(pk)  
3R  
A
Y
= Specific Device Code  
= Assembly Location  
= Year  
Lead Temperature Soldering Reflow for Solder-  
ing Purposes (1/8″ from case for 10 s)  
T
L
260  
°C  
W
Z
= Work Week  
= Assembly Lot Code  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
THERMAL RESISTANCE MAXIMUM RATINGS  
ORDERING INFORMATION  
Parameter  
Symbol  
Value  
1.2  
Unit  
†
Device  
NTMFSC006N12MC  
Package  
Shipping  
Junction−to−Case − Steady State  
Junction−to−Case Top − Steady State  
Junction−to−Ambient − Steady State (Note 2)  
R
°C/W  
q
JC  
DFN8  
(Pb−Free)  
3000 / Tape  
& Reel  
R
1.53  
45  
q
JT  
R
q
JA  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
1. The entire application environment impacts the thermal resistance values shown,  
they are not constants and are only valid for the particular conditions noted.  
2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.  
2
3. Maximum current for pulses as long as 1 second is higher but is dependent  
on pulse duration and duty cycle.  
© Semiconductor Components Industries, LLC, 2018  
1
Publication Order Number:  
January, 2023 − Rev. 3  
NTMFSC006N12MC/D  
 
NTMFSC006N12MC  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)  
J
Parameter  
OFF CHARACTERISTICS  
Symbol  
Test Condition  
Min  
Typ  
Max  
Unit  
Drain−to−Source Breakdown Voltage  
V
V
GS  
= 0 V, I = 250 mA  
120  
V
(BR)DSS  
D
Drain−to−Source Breakdown Voltage  
Temperature Coefficient  
V
/
I
D
= 250 mA, ref to 25°C  
16  
mV/°C  
(BR)DSS  
T
J
Zero Gate Voltage Drain Current  
I
V
DS  
= 0 V,  
T = 25°C  
5
mA  
DSS  
GS  
J
V
= 120 V  
T = 125°C  
J
100  
100  
Gate−to−Source Leakage Current  
ON CHARACTERISTICS (Note 4)  
Gate Threshold Voltage  
Negative Threshold Temperature Coefficient  
Drain−to−Source On Resistance  
Gate−Resistance  
I
V
= 0 V, V = 20 V  
nA  
GSS  
DS  
GS  
V
V
= V , I = 250 mA  
2
4
V
mV/°C  
mW  
W
GS(TH)  
GS  
DS  
D
V
/T  
J
I = 250 mA, ref to 25°C  
D
9.8  
4.7  
1.4  
GS(TH)  
R
V
GS  
= 10 V  
I = 44 A  
D
6.1  
DS(on)  
R
T = 25°C  
A
G
CHARGES & CAPACITANCES  
Input Capacitance  
C
V
= 0 V, f = 1 MHz, V = 60 V  
3040  
1460  
11.5  
24.3  
39  
pF  
nC  
ISS  
GS  
DS  
Output Capacitance  
C
OSS  
RSS  
Reverse Transfer Capacitance  
Total Gate Charge  
C
Q
V
= 6 V, V = 60 V, I = 44 A  
DS D  
G(TOT)  
G(TOT)  
GS  
Total Gate Charge  
Q
V
GS  
= 10 V, V = 60 V, I = 44 A  
DS D  
Gate−to−Source Charge  
Gate−to−Drain Charge  
Q
Q
13.2  
6.3  
GS  
GD  
GP  
Plateau Voltage  
V
4.65  
V
SWITCHING CHARACTERISTICS (Note 4)  
Turn−On Delay Time  
t
V
= 10 V, V = 60 V,  
15.2  
5.3  
ns  
d(ON)  
GS  
D
DS  
I
= 44 A, R = 2.5 W  
G
Rise Time  
t
r
Turn−Off Delay Time  
t
25.5  
5.7  
d(OFF)  
Fall Time  
t
f
DRAIN−SOURCE DIODE CHARACTERISTICS  
Forward Diode Voltage  
V
SD  
V
S
= 0 V,  
T = 25°C  
0.86  
0.74  
V
GS  
J
I
= 44 A  
T = 125°C  
J
Reverse Recovery Time  
t
V
GS  
= 0 V, dI /dt = 1000 A/ms,  
33.4  
ns  
RR  
S
I
= 44 A  
S
Reverse Recovery Charge  
Q
350.2  
nC  
RR  
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product  
performance may not be indicated by the Electrical Characteristics if operated under different conditions.  
4. Switching characteristics are independent of operating junction temperatures.  
www.onsemi.com  
2
 
NTMFSC006N12MC  
TYPICAL CHARACTERISTICS  
120  
100  
90  
V
GS  
= 10 V to 5.8 V  
V
DS  
= 10 V  
100  
80  
5.6 V  
80  
5.4 V  
5.2 V  
70  
60  
50  
40  
30  
20  
60  
5.0 V  
4.8 V  
T = 25°C  
J
40  
20  
0
10  
0
T = 125°C  
J
T = −55°C  
J
0
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
2
3
4
5
6
7
8
V
DS  
, DRAIN−TO−SOURCE VOLTAGE (V)  
V
GS  
, GATE−TO−SOURCE VOLTAGE (V)  
Figure 1. On−Region Characteristics  
Figure 2. Transfer Characteristics  
6.0  
5.8  
5.6  
5.4  
5.2  
5.0  
20  
18  
16  
14  
12  
10  
8
T = 25°C  
D
J
T = 25°C  
J
I
= 44 A  
V
= 10 V  
GS  
4.8  
4.6  
4.4  
4.2  
4.0  
6
4
5
6
7
8
9
10  
20  
30  
40  
50  
60  
70  
80  
90 100  
V
GS  
, GATE VOLTAGE (V)  
I , DRAIN CURRENT (A)  
D
Figure 3. On−Resistance vs. Gate−to−Source  
Figure 4. On−Resistance vs. Drain Current and  
Voltage  
Gate Voltage  
2.2  
1E+05  
1E+04  
1E+03  
1E+02  
1E+01  
V
I
= 10 V  
= 44 A  
GS  
T = 150°C  
2.0  
1.8  
1.6  
1.4  
1.2  
J
D
T = 125°C  
J
T = 85°C  
J
T = 25°C  
J
1.0  
0.8  
0.6  
1E+00  
1E−01  
0
20  
40  
60  
80  
100  
120  
−50  
−25  
0
25  
50  
75  
100  
125  
150  
T , JUNCTION TEMPERATURE (°C)  
J
V
DS  
, DRAIN−TO−SOURCE VOLTAGE (V)  
Figure 5. On−Resistance Variation with  
Figure 6. Maximum Continuous Drain Current  
vs. Case Temperature  
Temperature  
www.onsemi.com  
3
NTMFSC006N12MC  
TYPICAL CHARACTERISTICS  
10,000  
1000  
100  
10  
C
ISS  
9
8
7
6
5
4
3
2
C
OSS  
Q
Q
GD  
GS  
10  
1
V
I
= 60 V  
= 44 A  
V
= 0 V  
DS  
GS  
C
RSS  
T = 25°C  
D
J
1
0
T = 25°C  
J
f = 1 MHz  
0
1
1
20  
40  
60  
80  
100  
120  
0
5
10  
15  
20  
25  
30  
35  
40  
V
, DRAIN−TO−SOURCE VOLTAGE (V)  
Q , TOTAL GATE CHARGE (nC)  
DS  
G
Figure 7. Capacitance Variation  
Figure 8. Gate−to−Source and  
Drain−to−Source Voltage vs. Total Charge  
100  
1000  
100  
V
V
= 10 V  
= 60 V  
= 44 A  
V
= 0 V  
GS  
GS  
DS  
I
D
10  
1
t
d(off)  
t
d(on)  
10  
1
T = 125°C  
J
t
f
t
r
T = 25°C  
J
T = −55°C  
J
0.1  
10  
R , GATE RESISTANCE (W)  
100  
0.3 0.4  
V
0.5  
0.6  
0.7  
0.8  
0.9  
1.0 1.1  
, SOURCE−TO−DRAIN VOLTAGE (V)  
SD  
G
Figure 9. Resistive Switching Time Variation  
vs. Gate Resistance  
Figure 10. Diode Forward Voltage vs. Current  
100  
1000  
100  
10  
10 ms  
T
= 25°C  
J(initial)  
100 ms  
T
= 100°C  
J(initial)  
10  
V
≤ 10 V  
Single Pulse  
= 25°C  
GS  
T
C
1 ms  
1
R
Limit  
DS(on)  
10 ms  
Thermal Limit  
Package Limit  
100 ms  
0.1  
1
10  
100  
1E−06 1E−05  
1E−04  
1E−03  
1E−02 1E−01  
V
DS  
, DRAIN−TO−SOURCE VOLTAGE (V)  
TIME IN AVALANCHE (sec)  
Figure 11. Safe Operating Area  
Figure 12. IPEAK vs. Time in Avalanche  
www.onsemi.com  
4
NTMFSC006N12MC  
TYPICAL CHARACTERISTICS  
10  
50% Duty Cycle  
1
0.1  
20%  
10%  
5%  
2%  
0.01  
1%  
0.001  
Single Pulse  
0.0001  
0.000001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
PULSE TIME (sec)  
Figure 13. Thermal Characteristics  
DUAL COOL is a registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States  
and/or other countries.  
www.onsemi.com  
5
MECHANICAL CASE OUTLINE  
PACKAGE DIMENSIONS  
DFN8 5x6.15, 1.27P, DUAL COOL  
CASE 506EG  
ISSUE D  
DATE 25 AUG 2020  
GENERIC  
MARKING DIAGRAM*  
AYWWZZ  
XXXXXX  
XXXX = Specific Device Code  
*This information is generic. Please refer to  
A
Y
= Assembly Location  
= Year  
device data sheet for actual part marking.  
Pb−Free indicator, “G” or microdot “G”, may  
or may not be present. Some products may  
not follow the Generic Marking.  
WW = Work Week  
ZZ  
= Assembly Lot Code  
Electronic versions are uncontrolled except when accessed directly from the Document Repository.  
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.  
DOCUMENT NUMBER:  
DESCRIPTION:  
98AON84257G  
DFN8 5x6.15, 1.27P, DUAL COOL  
PAGE 1 OF 1  
ON Semiconductor and  
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.  
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding  
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically  
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the  
rights of others.  
© Semiconductor Components Industries, LLC, 2018  
www.onsemi.com  
onsemi,  
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates  
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.  
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any  
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the  
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use  
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products  
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information  
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may  
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license  
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems  
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should  
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,  
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death  
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Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.  
ADDITIONAL INFORMATION  
TECHNICAL PUBLICATIONS:  
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