NTMFSC1D9N06HL [ONSEMI]
MOSFET - Power, Single, N-Channel, DUAL COOLTM, DFN8 5x6. 15, 60V, 1.9m, 199A;型号: | NTMFSC1D9N06HL |
厂家: | ONSEMI |
描述: | MOSFET - Power, Single, N-Channel, DUAL COOLTM, DFN8 5x6. 15, 60V, 1.9m, 199A |
文件: | 总7页 (文件大小:367K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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www.onsemi.com
onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or
subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi
product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without
notice. The information herein is provided “as-is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality,
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liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws,
regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdonsemi and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
MOSFET - Power, Single
N-Channel, DUAL COOLt,
60 V, 1.9 mW, 199 A
DFN8 5x6.15
NTMFSC1D9N06HL
www.onsemi.com
Features
• Advanced Dual−Side Cooled Packaging
• Ultra Low R
to Minimize Conduction Losses
• MSL1 Robust Packaging Design
DS(on)
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
60 V
1.9 mW @ 10 V
199 A
• Low Qg and Qoss to Minimize Charge Losses
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
N−Channel MOSFET
Compliant
Typical Applications
• DC−DC Conversion
• Orring FET/Load Switching
• Synchronous Rectification
S
S
S
1
8
D
D
D
2
3
7
6
MAXIMUM RATINGS (T = 25°C, Unless otherwise specified)
J
G
4
5
D
Parameter
Drain−to−Source Breakdown Voltage
Gate−to−Source Voltage
Symbol
Value
60
Unit
V
V
(BR)DSS
V
GS
20
V
Continuous Drain
Current R
I
199
A
D
q
JC
Steady
State
(Note 2)
T
= 25°C
C
Power Dissipation
P
166
30
W
A
D
R
(Note 2)
q
JC
Continuous Drain
Current R
I
D
DFN8 5x6.15
CASE 506EG
q
JA
Steady
State
(Note 1, 2)
T = 25°C
A
Power Dissipation
P
3.8
W
D
R
(Note 1, 2)
q
JA
MARKING DIAGRAM
Pulsed Drain Current T = 25°C, t = 100 ms
I
DM
820
A
A
p
AYWWZZ
1D9N06
Operating Junction and Storage Temperature
Range
T , T
−55 to
+175
°C
J
stg
Source Current (Body Diode)
I
138
277
A
S
Single Pulse Drain−to−Source Avalanche
E
AS
mJ
Energy (I = 43 A)
AV
Lead Temperature Soldering Reflow for Sol-
T
260
°C
L
1D9N06 = Specific Device Code
= Assembly Plant Code
YWW = Date Code (Year & Week)
ZZ = Lot Code
dering Purposes (1/8″ from case for 10 s)
A
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
2
1. Surface−mounted on FR4 board using 1 in pad size, 1 oz Cu pad.
2. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
ORDERING INFORMATION
See detailed ordering and shipping information on page 5 of
this data sheet.
© Semiconductor Components Industries, LLC, 2020
1
Publication Order Number:
June, 2021 − Rev. 1
NTMFSC1D9N06HL/D
NTMFSC1D9N06HL
THERMAL CHARACTERISTICS
Symbol
Parameter
Max
0.9
1.4
39
Unit
Junction−to−Case – Steady State (Note 2)
Junction−to−Top Source – Steady State (Note 2)
Junction−to−Ambient – Steady State (Note 2)
°C/W
R
q
JC
R
R
q
JT
q
JA
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
V
GS
= 0 V, I = 250 mA
60
V
(BR)DSS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/ T
J
38
mV/°C
(BR)DSS
Zero Gate Voltage Drain Current
I
T = 25°C
10
mA
DSS
J
V
= 0 V,
GS
DS
V
= 60 V
T = 125°C
J
250
100
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
I
V
= 0 V, V = 20 V
nA
GSS
DS
GS
V
V
= V , I = 250 mA
1.2
2.0
V
GS(TH)
GS
DS
D
/
Negative Threshold Temperature
Coefficient
V
T
J
−5.6
mV/°C
GS(TH)
I
D
= 250 mA, ref to 25°C
Drain−to−Source On Resistance
R
V
= 10 V, I = 50 A
1.4
1.9
357
1.4
1.9
2.6
mW
DS(on)
GS
D
V
GS
= 4.5 V, I = 40 A
D
Forward Trans−conductance
Gate−Resistance
g
FS
V
= 15V, I = 50A
S
DS
GS
D
R
V
= 0 V, f = 1 MHz
2.6
W
G
CHARGES & CAPACITANCES
Input Capacitance
C
4910
862
12
pF
nC
ISS
V
= 0 V, f = 1 MHz,
DS
GS
Output Capacitance
C
OSS
RSS
V
= 30 V
Reverse Transfer Capacitance
Total Gate Charge
C
Q
Q
V
V
= 10 V, V = 30 V, I = 50 A
64
G(TOT)
G(TOT)
GS
DS
D
Total Gate Charge
29
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Output Charge
Q
7.2
13.2
5.7
92
G(TH)
= 4.5 V, V = 30 V, I =50 A
GS
DS
D
Q
nC
nC
ns
GS
GD
Q
Q
V
= 30 V, V = 0 V
OSS
DD GS
SWITCHING CHARACTERISTICS (Note 3)
Turn−On Delay Time
Rise Time
t
25.4
16.2
30.3
10.1
d(ON)
t
r
V
= 4.5 V, V = 30 V,
DS
GS
I
D
= 50 A, R = 2.5 W
G
Turn−Off Delay Time
Fall Time
t
d(OFF)
t
f
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
T = 25°C
0.80
0.63
56
1.2
V
SD
J
V
= 0 V,
GS
S
I
= 50 A
T = 150°C
J
Reverse Recovery Time
t
ns
RR
V
GS
= 0 V, dI /dt = 100 A/ms,
S
I
S
= 50 A
Reverse Recovery Charge
Q
67
nC
RR
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Switching characteristics are independent of operating junction temperatures.
www.onsemi.com
2
NTMFSC1D9N06HL
TYPICAL CHARACTERISTICS
200
200
V
= 12 V
to 3.6 V
V
DS
= 5 V
GS
3.2 V
160
120
80
150
100
3.4 V
3.0 V
2.8 V
T = 175°C
J
T = 150°C
J
T = 25°C
J
50
0
40
0
2.6 V
2.4 V
T = −55°C
J
0
1
2
3
4
5
0
1
2
3
4
5
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
70
56
42
6
3
0
T = 25°C
D
J
I
= 50 A
28
14
0
V
= 4.5 V
= 10 V
GS
V
GS
0
1
2
3
4
5
6
7
8
9
10
0
40
80
120
160
200
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 3. On−Resistance vs. Gate−to−Source
Figure 4. On−Resistance vs. Drain Current and
Voltage
Gate Voltage
1E−03
1E−04
1E−05
1E−06
1E−07
1E−08
2.5
T = 175°C
J
V
I
= 10 V
= 50 A
GS
T = 150°C
J
D
T = 125°C
J
2.0
1.5
T = 25°C
J
1.0
0.5
1E−09
1E−10
−75 −50 −25
0
25
50 75 100 125 150 175
20
30
40
50
60
T , JUNCTION TEMPERATURE (°C)
J
V
, DRAIN−TO−SOURCE VOLTAGE (V)
DS
Figure 5. On−Resistance Variation with
Figure 6. Drain−to−Source Leakage Current
Temperature
vs. Voltage
www.onsemi.com
3
NTMFSC1D9N06HL
TYPICAL CHARACTERISTICS
10K
1K
10
V
= 30 V
DD
C
C
ISS
8
6
4
OSS
100
Q
GD
Q
GS
C
RSS
10
1
V
= 0 V
GS
2
0
T = 25°C
J
f = 1 MHz
0.1
1
10
0
8
16
24
32
40
48
56
64
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Q , TOTAL GATE CHARGE (nC)
G
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
1000
100
10
100
10
1
V
= 0 V
GS
V
V
I
= 4.5 V
= 30 V
= 50 A
GS
DS
D
T = 150°C
J
t
r
T = 175°C
J
0.1
t
d(off)
T = 25°C
J
0.01
t
d(on)
t
T = −55°C
J
f
0.001
1
10
R , GATE RESISTANCE (W)
0
0.2
0.4
, SOURCE−TO−DRAIN VOLTAGE (V)
SD
0.6
0.8
1.0
1.2
V
G
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
2000
1000
1000
100
100
10
1
10 ms
T
= 25°C
J(initial)
100 ms
R
= 0.9°C/W
q
1 ms
10 ms
JC
T
= 150°C
J(initial)
Single Pulse
= 25°C
10
1
T
C
100 ms/DC
R
Limit
0.1
DS(on)
Thermal Limit
Package Limit
0.01
0.1
1
10
100
0.001 0.01
0.1
1
10
100 1000
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
t , TIME IN AVALANCHE (mS)
AV
Figure 11. Forward Bias Safe Operating Area
Figure 12. Unclamped Inductive Switching
Capability
www.onsemi.com
4
NTMFSC1D9N06HL
TYPICAL CHARACTERISTICS
10
1
50% Duty Cycle
20%
10%
5%
0.1
2%
P
DM
Notes:
= 0.9°C/W
1%
0.01
R
q
JC
Peak T = P
Duty Cycle, D = t / t
x Z (t) + T
q
JC C
t
1
J
DM
Single Pulse
t
2
1
2
0.001
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Transient Thermal Impedance
ORDERING INFORMATION
Device
†
Device Marking
Package
Shipping
NTMFSC1D9N06HL
1D9N06
DFN8
3000 / Tape & Reel
(Pb−Free/Halogen Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
www.onsemi.com
5
NTMFSC1D9N06HL
PACKAGE DIMENSIONS
DFN8 5x6.15, 1.27P, DUAL COOL
CASE 506EG
ISSUE D
DUAL COOL is a registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other coun-
tries.
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Email Requests to: orderlit@onsemi.com
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North American Technical Support:
Voice Mail: 1 800−282−9855 Toll Free USA/Canada
Phone: 011 421 33 790 2910
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For additional information, please contact your local Sales Representative
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◊
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