NTMFSS1D3N06CL [ONSEMI]

MOSFET, Power, Single, N-Channel, Source-Down, TDFN9, 60V, 1.3mΩ, 243A;


型号：	NTMFSS1D3N06CL
厂家：	ONSEMI
描述：	MOSFET, Power, Single, N-Channel, Source-Down, TDFN9, 60V, 1.3mΩ, 243A
文件：	总7页 (文件大小：363K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

DATA SHEET

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MOSFET - Power, Single

N-Channel, Source-Down

TDFN9

MAX

I MAX

(BR)DSS

DS(ON)

1.3 mW @ 10 V

2.0 mW @ 4.5 V

60 V

243 A

60 V, 1.3 mW, 243 A

D (5, 6, 7, 8)

NTMFSS1D3N06CL

Features

• Small Footprint (5x6 mm) for Compact Design

G (9)

• Low R

to Minimize Conduction Losses

DS(on)

• Low Q and Capacitance to Minimize Driver Losses

S (1, 2, 3, 4)

N−CHANNEL MOSFET

• These Devices are Pb−Free, Halogen−Free / BFR Free and are RoHS

Compliant

Typical Applications

MARKING

DIAGRAM

• DC−DC Converters

• Power Load Switch

• Notebook Battery Management

• Synchronous Rectifier

1D3N06

AYWZZ

TDFN9 5x6

CASE 520AE

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Parameter

Drain−to−Source Voltage

Symbol

Value

Unit

XXXX = Specific Device Code

DSS

= Assembly Location

= Year

= Work Week

= Wafer Lot

Gate−to−Source Voltage

Continuous Drain

Current R

= 25°C

= 100°C

= 25°C

243

153

Steady

State

Power Dissipation

Steady

State

ORDERING INFORMATION

= 100°C

†

Device

NTMFSS1D3N06CL

Package

Shipping

Continuous Drain Cur-

T = 25°C

TDFN9

(Pb−Free)

3000 / Tape

& Reel

rent R

(Notes 1, 2)

= 100°C

Steady

State

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

Power Dissipation

(Notes 1, 2)

T = 25°C

2.5

= 100°C

Pulsed Drain Current

T = 25°C, t = 10 ms

1758

Operating Junction and Storage Temperature

Range

T , T

−55 to

+150

°C

stg

Single Pulse Drain−to−Source Avalanche

234

Energy (I

= 79 A)

L(pk)

Lead Temperature Soldering Reflow for Solder-

ing Purposes (1/8″ from case for 10 s)

260

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

THERMAL RESISTANCE MAXIMUM RATINGS

Parameter

Symbol

Value

0.81

Unit

Junction−to−Case − Steady State

Junction−to−Ambient − Steady State (Note 2)

°C/W

1. The entire application environment impacts the thermal resistance values shown,

they are not constants and are only valid for the particular conditions noted.

2. Surface−mounted on FR4 board using a 1 in pad size, 2 oz. Cu pad.

Publication Order Number:

January, 2023 − Rev. 2

NTMFSS1D3N06CL/D

NTMFSS1D3N06CL

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

= 0 V, I = 250 mA

(BR)DSS

Drain−to−Source Breakdown Voltage

Temperature Coefficient

= 250 mA, ref to 25°C

mV/°C

(BR)DSS

Zero Gate Voltage Drain Current

Gate−to−Source Leakage Current

ON CHARACTERISTICS

= 0 V, V = 60 V T = 25°C

DSS

= 0 V, V = 20 V

100

GSS

Gate Threshold Voltage

= V , I = 250 mA

1.2

2.0

GS(TH)

Threshold Temperature Coefficient

Drain−to−Source On Resistance

I = 250 mA, ref to 25°C

−5.9

1.0

mV/°C

GS(TH)

= 10 V, I = 50 A

1.3

2.0

DS(on)

= 4.5 V, I = 50 A

1.3

Forward Transconductance

Gate Resistance

= 15 V, I = 50 A

180

0.6

T = 25°C

CHARGES & CAPACITANCES

Input Capacitance

= 0 V, f = 1 MHz, V = 30 V

8190

3950

ISS

Output Capacitance

Reverse Capacitance

Total Gate Charge

OSS

RSS

= 10 V, V = 30 V, I = 50 A

117

G(TOT)

Total Gate Charge

= 4.5 V, V = 30 V, I = 50 A

DS D

Gate−to−Drain Charge

Gate−to−Source Charge

Plateau Voltage

22.4

2.8

SWITCHING CHARACTERISTICS (Note 3)

Turn−On Delay Time

Rise Time

= 4.5 V, V = 30 V,

19.6

9.2

d(ON)

= 50 A, R = 2.5 W

Turn−Off Delay Time

Fall Time

d(OFF)

SOURCE−TO−DRAIN DIODE CHARACTERISTICS

Forward Diode Voltage

= 0 V,

T = 25°C

0.79

0.65

1.2

= 50 A

T = 125°C

Reverse Recovery Time

Charge Time

= 0 V, dI/dt = 100 A/ms,

= 50 A

Discharge Time

Reverse Recovery Charge

153

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

3. Switching characteristics are independent of operating junction temperatures.

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NTMFSS1D3N06CL

TYPICAL CHARACTERISTICS

200

180

160

140

120

100

250

3.4 V

3.2 V

= 10 V

200

150

100

3.0 V

2.8 V

= 10 V to 4.5 V

T = 25°C

2.6 V

2.4 V

T = −55°C

T = 125°C

0.5

1.0

1.5

2.0

, DRAIN−TO−SOURCE VOLTAGE (V)

, GATE−TO−SOURCE VOLTAGE (V)

Figure 1. On−Region Characteristics

Figure 2. Transfer Characteristics

4.0

3.5

3.0

2.5

2.0

1.9

1.7

1.5

1.3

1.1

0.9

0.7

0.5

T = 25°C

= 50 A

= 4.5 V

= 10 V

1.5

1.0

0.5

100

120

140

, GATE−TO−SOURCE VOLTAGE (V)

I , DRAIN CURRENT (A)

Figure 3. On−Resistance vs. Gate−to−Source

Figure 4. On−Resistance vs. Drain Current and

Voltage

Gate Voltage

1.8

1.6

1.4

1.2

1.E+05

1.E+04

1.E+03

1.E+02

1.E+01

1.E+00

= 10 V

= 50 A

T = 150°C

T = 125°C

T = 85°C

T = 25°C

0.8

0.6

−50 −25

100

125

150

10 15 20 25 30 35 40 45 50 55 60

T , JUNCTION TEMPERATURE (°C)

, DRAIN−TO−SOURCE VOLTAGE (V)

Figure 5. On−Resistance Variation with

Figure 6. Drain−to−Source Leakage Current

Temperature

vs. Voltage

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NTMFSS1D3N06CL

TYPICAL CHARACTERISTICS

1.E+05

1.E+04

1.E+03

1.E+02

1.E+01

= 30 V

T = 25°C

= 50 A

ISS

OSS

= 0 V

T = 25°C

RSS

f = 1 MHz

100

120

, DRAIN−TO−SOURCE VOLTAGE (V)

Q , TOTAL GATE CHARGE (nC)

Figure 7. Capacitance Variation

Figure 8. Gate−to−Source vs. Total Charge

100

1000

100

= 0 V

= 10 V

= 30 V

= 50 A

d(off)

d(on)

T = 125°C

T = 25°C

T = −55°C

0.1

R , GATE RESISTANCE (W)

100

0.3

0.4

0.5

0.6

0.7

0.8

0.9

, SOURCE−TO−DRAIN VOLTAGE (V)

Figure 9. Resistive Switching Time Variation

vs. Gate Resistance

Figure 10. Diode Forward Voltage vs. Current

100

= 25°C

Single Pulse

1000

100

≤ 10 V

10 ms

= 25°C

J(initial)

= 100°C

J(initial)

100 ms

1 ms

Limit

DS(on)

10 ms

Thermal Limit

Package Limit

100 ms

1E−06

0.1

1E−05

1E−04

1E−03

1E−02

1E−01

100

, DRAIN−TO−SOURCE VOLTAGE (V)

T , TIME IN AVALANCHE (s)

Figure 11. Safe Operating Area

Figure 12. I_PEAKvs. Time in Avalanche

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NTMFSS1D3N06CL

TYPICAL CHARACTERISTICS

50% Duty Cycle

20%

10%

0.1

0.01

Single Pulse

0.001

0.000001

0.00001

0.0001

0.001

0.01

0.1

PULSE TIME (sec)

Figure 13. Thermal Characteristics

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MECHANICAL CASE OUTLINE

PACKAGE DIMENSIONS

TDFN9 5x6, 1.27P

CASE 520AE

ISSUE B

DATE 24 NOV 2022

GENERIC

MARKING DIAGRAM*

XXXX = Specific Device Code

= Assembly Location

WL = Wafer Lot

= Year Code

WW = Work Week Code

*This information is generic. Please refer to

XXXXXX

AWLYWW

device data sheet for actual part marking.

Pb−Free indicator, “G” or microdot “G”, may

or may not be present. Some products may

not follow the Generic Marking.

Electronic versions are uncontrolled except when accessed directly from the Document Repository.

Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

DOCUMENT NUMBER:

DESCRIPTION:

98AON99041G

TDFN9 5x6, 1.27P

PAGE 1 OF 1

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NTMFSS1D3N06CL [ONSEMI]

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