NTMJS1D15N03CGTWG [ONSEMI]
MOSFET, Power N Channel 30V LFPAK ;
| 型号： | NTMJS1D15N03CGTWG |
| 厂家： | 
ONSEMI |
| 描述： | MOSFET, Power N Channel 30V LFPAK |
| 文件： | 总7页 (文件大小：317K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
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Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
MOSFET - Power, Single
N-Channel, LFPAK8
30 V, 1.15 mW, 257 A
NTMJS1D15N03CG
Features
• Wide SOA to Improve Inrush Current Management
• Advanced LFPAK Package (5x6mm) with Excellent Thermal
Conduction
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• Ultra Low R
to Improve System Efficiency
• These Devices are Pb−Free, Halogen/BFR−Free and are RoHS
V
R
MAX
I MAX
D
DS(on)
(BR)DSS
DS(ON)
30 V
1.15 mW @ 10 V
257 A
Compliant
Typical Applications
• Hot Swap Application
• Motor Drive
• Power Load Switch
• Battery Management
D (5−8)
G (4)
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
S (1,2,3)
N−CHANNEL MOSFET
Parameter
Drain−to−Source Voltage
Symbol
Value
30
Unit
V
V
DSS
Gate−to−Source Voltage
V
20
V
GS
MARKING
DIAGRAM
Continuous Drain
T
= 25°C
= 100°C
= 25°C
I
257
182
125
A
C
D
Current R
(Note 1)
q
JC
T
C
Steady
State
D
D
D
D
Power Dissipation
(Note 1)
T
C
P
W
A
D
R
q
JC
1D15N3
CG
AWLYW
Continuous Drain
Current R
T = 25°C
A
I
45
31
D
LFPAK8
CASE 760AA
q
JA
T = 100°C
A
Steady
State
(Notes 1, 2)
1
Power Dissipation
T = 25°C
A
P
3.8
W
D
S
S
S
G
R
(Notes 1, 2)
q
JA
1D15N3CG = Specific Device Code
Pulsed Drain Current
T = 25°C, t = 10 ms
I
DM
900
A
A
p
A
WL
Y
= Assembly Location
= Wafer Lot
Operating Junction and Storage Temperature
Range
T , T
−55 to
+175
°C
J
stg
= Year
W
= Work Week
Single Pulse Drain−to−Source Avalanche
E
AS
354
mJ
Energy (I
= 23.2 A)
L(pk)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
L
260
°C
ORDERING INFORMATION
See detailed ordering, marking and shipping information on
page 5 of this data sheet.
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
2
1. Surface−mounted on FR4 board using a 1 in , 2 oz. Cu pad.
2. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
© Semiconductor Components Industries, LLC, 2020
1
Publication Order Number:
February, 2021 − Rev. 0
NTMJS1D15N03CG/D
NTMJS1D15N03CG
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Value
1.2
Unit
Junction−to−Case − Steady State (Note 1)
Junction−to−Ambient − Steady State (Note 1)
R
°C/W
q
JC
R
40
q
JA
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
V
GS
= 0 V, I = 250 mA
30
V
(BR)DSS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/
I
D
= 250 mA, ref to 25°C
14
(BR)DSS
mV/°C
T
J
Zero Gate Voltage Drain Current
I
V
= 0 V,
T = 25°C
1.0
100
100
DSS
GS
DS
J
V
= 30 V
mA
T = 125°C
J
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
Threshold Temperature Coefficient
Drain−to−Source On Resistance
Forward Transconductance
Gate Resistance
I
V
= 0 V, V = 20 V
nA
GSS
DS
GS
GS
V
V
= V , I = 160 mA
1.3
2.2
V
mV/°C
mW
S
GS(TH)
DS
D
V
/T
J
I
= 160 mA, ref to 25°C
−4.7
0.92
61
GS(TH)
D
R
V
GS
= 10 V
I = 20 A
D
1.15
DS(on)
g
FS
V
= 3 V, I = 20 A
DS D
R
T = 25°C
A
1.7
W
G
CHARGES & CAPACITANCES
Input Capacitance
C
7300
3600
99
ISS
Output Capacitance
C
V
GS
= 0 V, V = 15 V, f = 1 MHz
pF
nC
OSS
RSS
DS
Reverse Transfer Capacitance
Total Gate Charge
C
Q
94
G(TOT)
Threshold Gate Charge
Gate−to−Drain Charge
Q
11
G(TH)
V
= 10 V, V = 15 V; I = 20 A
DS D
GS
Q
6.9
19
GD
GS
Gate−to−Source Charge
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time
Q
t
18
13
72
15
d(ON)
Rise Time
t
r
V
= 10 V, V = 15 V,
DS
GS
D
ns
V
I
= 20 A, R = 3 W
G
Turn−Off Delay Time
t
d(OFF)
Fall Time
t
f
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
T = 25°C
0.75
0.60
77
1.2
SD
J
V
S
= 0 V,
GS
I
= 10 A
T = 125°C
J
Reverse Recovery Time
t
ns
RR
V
= 0 V, V = 15 V,
R
GS
I
S
= 20 A, dIS/dt = 100 A/ms
Reverse Recovery Charge
Q
102
nC
RR
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
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2
NTMJS1D15N03CG
TYPICAL CHARACTERISTICS
350
300
250
200
150
100
350
V
GS
= 6 to 10 V
V
DS
= 3 V
5.5 V
5.0 V
300
250
200
150
100
4.5 V
4.0 V
3.5 V
T = 25°C
J
3.0 V
2.5 V
50
0
50
0
T = 125°C
J
T = −55°C
J
0
0.5
1.0
1.5
2.0
2.5
3.0
1.0 1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
2.0
1.5
1.0
8
6
4
I
= 20 A
D
T = 25°C
J
V
GS
= 10 V
2
0
0.5
0
2
3
4
5
6
7
8
9
10
5
45
85
125
165
205
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 3. On−Resistance vs. Gate−to−Source
Figure 4. On−Resistance vs. Drain Current and
Voltage
Gate Voltage
1E−04
1E−05
1E−06
1E−07
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
T = 175°C
J
I
V
= 20 A
D
T = 150°C
J
= 10 V
GS
T = 125°C
J
T = 85°C
J
T = 25°C
J
1E−08
1E−09
0.4
0.2
−50 −25
0
25
50
75 100 125 150 175
5
10
15
20
25
30
T , JUNCTION TEMPERATURE (°C)
J
V
, DRAIN−TO−SOURCE VOLTAGE (V)
DS
Figure 5. On−Resistance Variation with
Figure 6. Drain−to−Source Leakage Current
Temperature
vs. Voltage
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3
NTMJS1D15N03CG
TYPICAL CHARACTERISTICS
100K
10K
1K
10
T = 25°C
DS
J
V
9
8
7
6
5
4
3
2
= 15 V
C
iss
I
D
= 20 A
C
oss
Q
100
gd
Q
C
gs
rss
V
= 0 V
GS
10
1
T = 25°C
J
1
0
0
f = 1 MHz
0
5
10
15
20
25
30
10 20 30
40 50 60 70
80 90 100
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Q , TOTAL GATE CHARGE (nC)
g
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source vs. Total Charge
1000
100
10
8
t
d(off)
V
= 15 V
= 20 A
= 10 V
V
GS
= 0 V
DS
I
D
V
GS
t
f
t
t
r
6
d(on)
4
10
1
2
0
T = 125°C
J
T = 25°C
J
T = −55°C
J
1
10
R , GATE RESISTANCE (W)
100
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
G
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
100
1000
100
10
V
≤ 10 V
GS
Single Pulse
10 ms
T
C
= 25°C
T
= 25°C
J(initial)
100 ms
T
= 100°C
J(initial)
1 ms
10 ms
100 ms
1 s
1
R
Limit
DS(on)
Thermal Limit
Package Limit
0.1
10
0.0001
0.001
, TIME IN AVALANCHE (s)
0.01
0.01
0.1
1
10
100
T
AV
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 12. Maximum Drain Current vs. Time in
Avalanche
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
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4
NTMJS1D15N03CG
TYPICAL CHARACTERISTICS
100
Duty Cycle = 50%
20%
10%
5%
10
1
2%
1%
0.1
Single Pulse
0.01
0.000001 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
t, PULSE TIME (s)
Figure 13. Thermal Response
DEVICE ORDERING INFORMATION
Device
†
Marking
Package
Shipping
NTMJS1D15N03CGTWG
1D15N3
CG
LFPAK8
(Pb−Free)
3000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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5
NTMJS1D15N03CG
PACKAGE DIMENSIONS
LFPAK8 5x6
CASE 760AA
ISSUE C
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
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