NTMT125N60S5H [ONSEMI]
Power MOSFET, N-Channel, SUPERFET® V, FAST, 600 V, 22 A, 125 mΩ, Power88;
| 型号： | NTMT125N60S5H |
| 厂家： | 
ONSEMI |
| 描述： | Power MOSFET, N-Channel, SUPERFET® V, FAST, 600 V, 22 A, 125 mΩ, Power88 |
| 文件： | 总7页 (文件大小：272K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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MOSFET - Power, Single
N-Channel, SUPERFET),
FAST, TDFN4
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
600 V
125 mW @ 10 V
22 A
N−CHANNEL MOSFET
600 V, 125 mW, 22 A
D
NTMT125N60S5H
Description
The SUPERFET V MOSFET FAST series helps maximize system
efficiency by the extremely low switching losses in hard switching
application. The TDFN4 package which is an ultra slim SMD package
offers excellent switching performance by providing kelvin source
configuration and lower parasitic source inductance.
Features
G
S1: Driver Source
S2: Power Source
S1 S2
• 650 V @ T = 150°C / Typ. R
= 100 mW
J
DS(on)
• 100% Avalanche Tested
• Pb−Free, Halogen Free / BFR Free and are RoHS Compliant
S2
Applications
S2
S1
G
TDFN4
CASE 520AB
• Telecom / Server Power Supplies
• EV Charger / UPS / Solar / Industrial Power Supplies
ABSOLUTE MAXIMUM RATINGS (T = 25°C, Unless otherwise noted)
J
Parameter
Drain−to−Source Voltage
Symbol
Value
600
30
Unit
V
MARKING DIAGRAM
V
DSS
V
GSS
Gate−to−Source Voltage
DC
V
AC (f > 1 Hz)
30
NTMT125
N60S5H
AWLYWW
Continuous Drain Current
T
= 25°C
= 100°C
= 25°C
= 25°C
I
22
A
C
D
T
C
13
Power Dissipation
T
T
P
152
77
W
A
C
D
Pulsed Drain Current (Note 1)
I
DM
C
NTMT125N60S5H = Specific Device Code
Pulsed Source Current (Body
Diode) (Note 1)
I
77
A
SM
A
WL
Y
= Assembly Location
= Wafer Lot
= Year
Operating Junction and Storage Temperature T , T
Range
−55 to
+150
°C
J
STG
WW
= Work Week
Source Current (Body Diode)
I
S
22
A
Single Pulse Avalanche
Energy
I = 4.5 A
G
E
AS
184
mJ
L
ORDERING INFORMATION
R
= 25 W
†
Avalanche Current
I
4.5
1.52
120
20
A
Device
Package
Shipping
AS
Repetitive Avalanche Energy (Note 1)
MOSFET dv/dt
E
mJ
AR
NTMT125N60S5H
TDFN4
3000 / Tape &
Reel
dv/dt
V/ns
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Peak Diode Recovery dv/dt (Note 2)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 seconds)
T
260
°C
L
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Repetitive rating: pulse−width limited by maximum junction temperature.
2. I ≤ 11 A, di/dt ≤ 200 A/s, V ≤ 400 V, starting T = 25°C.
SD
DD
J
© Semiconductor Components Industries, LLC, 2022
1
Publication Order Number:
October, 2022 − Rev. 0
NTMT125N60S5H/D
NTMT125N60S5H
THERMAL CHARACTERISTICS
Parameter
Symbol
Value
0.82
45
Unit
Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient
R
°C/W
q
JC
R
q
JA
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
V
I
= 0 V, I = 10 mA, T = 25_C
600
−
−
−
V
(BR)DSS
GS
D
J
Drain−to−Source Breakdown Voltage
Temperature Coefficient
DV
/
= 10 mA, Referenced to 25_C
−
630
mV/_C
(BR)DSS
D
DT
J
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
ON CHARACTERISTICS
I
V
GS
= 0 V, V = 600 V, T = 25_C
−
−
−
−
1
mA
DSS
GSS
DS
J
I
V
=
30 V, V = 0 V
100
nA
GS
DS
Drain−to−Source On Resistance
Gate Threshold Voltage
R
V
= 10 V, I = 11 A, T = 25_C
−
2.7
−
100
−
125
4.3
−
mW
V
DS(on)
GS
D
J
V
V
GS
= V , I = 2.1 mA, T = 25_C
GS(th)
DS
D
J
Forward Trans−conductance
g
FS
V
DS
= 20 V, I = 11 A
21.4
S
D
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
C
V
= 400 V, V = 0 V, f = 250 kHz
−
−
−
2037
31.9
486
−
−
−
pF
ISS
DS
GS
Output Capacitance
C
OSS
Time Related Output Capacitance
C
I = Constant, V = 0 V to 400 V,
D DS
OSS(tr.)
V
GS
= 0 V
Energy Related Output Capacitance
Total Gate Charge
C
V
= 0 V to 400 V, V = 0 V
−
−
−
−
−
52.9
37.1
9.93
10.3
1.08
−
−
−
−
−
OSS(er.)
DS
GS
Q
V
= 400 V, I = 11 A, V = 10 V
nC
G(tot)
DD
D
GS
Gate−to−Source Charge
Gate−to−Drain Charge
Gate Resistance
Q
GS
Q
GD
R
f = 1 MHz
W
G
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Rise Time
t
V
GS
I
= 0/10 V, V = 400 V,
−
−
−
−
19.2
5.61
57.4
2.69
−
−
−
−
ns
d(on)
DD
= 11 A, R = 7.5 W
D
G
t
r
Turn-Off Delay Time
Fall Time
t
d(off)
t
f
SOURCE-TO−DRAIN DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
Reverse Recovery Charge
V
V
GS
= 0 V, I = 11 A, T = 25_C
−
−
−
−
1.2
−
V
SD
RR
SD
J
t
V
= 0 V, I = 11 A,
335
4519
ns
nC
GS
SD
dI/dt = 100 A/ms, V = 400 V
DD
Q
−
RR
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
SUPERFET is a registered trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States
and/or other countries.
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2
NTMT125N60S5H
TYPICAL CHARACTERISTICS
40
35
30
25
20
15
10
5
1000
T
VDS=20V
J=25°C
100
10
VGS=4V
VGS=4.5V
V
GS=5V
VGS=6V
GS=7V
T
J=−55°C
V
T
J=25°C
VGS=10V
T
J=150°C
0
1
0
5
10
15
20
3
4
5
6
7
VDS, Drain to Source Voltage (V)
VGS, Gate to Source Voltage (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
250
200
150
100
50
1000
100
10
T
VGS=0V
J=25°C
1
T
J=150°C
VGS=10V
GS=20V
T
J=25°C
V
T
J=−55°C
0
0.1
0
5
10
15
20
25
30
35
40
0
0.2
0.4
0.6
0.8
1
1.2
ID, Drain Current (A)
VSD , Diode Forward Voltage (V)
Figure 3. On−Resistance Variation vs. Drain
Figure 4. Diode Forward Voltage vs. Source
Current
Current and Gate Voltage
105
10
8
ID=11A
VGS=0V
C
iss=Cgs+Cgd(Cds=shorted)
T
J=25°C
Coss=Cds+Cgd
Crss=Cgd
104
103
102
101
100
10−1
f=250KHz
6
4
2
C
ISS
OSS
RSS
C
VDD=130V
VDD=400V
C
0
0
100
200
300
400
500
600
0
5
10
15
20
25
30
35
40
VDS, Drain to Source Voltage (V)
QG, Gate Charge (nC)
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
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3
NTMT125N60S5H
TYPICAL CHARACTERISTICS
1.2
1.15
1.1
3
VGS=0V
ID=10mA
I
D=11A
VGS=10V
2.5
2
1.05
1
1.5
1
0.95
0.9
0.5
0.85
0.8
0
−75 −50 −25
0
25 50 75 100 125 150 175
−75 −50 −25
0
25 50 75 100 125 150 175
T
T
J, Junction Temperature (°C)
J, Junction Temperature (°C)
Figure 8. On−Resistance Variation vs.
Figure 7. Breakdown Voltage Variation vs.
Temperature
Temperature
25
20
15
10
5
=25°C
TC
J=150°C
T
Single Pulse
Limited by RDS(ON)
101
100
pulseDuration=10u
pulseDuration=100u
pulseDuration=1m
pulseDuration=10m
pulseDuration=DC
10−1
0
0.1
1
10
100
1000
25
50
75
100
125
150
VDS, Drain to Source Voltage (V)
T
C, Case Temperature (°C)
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current vs. Case
Temperature
8
7
6
5
4
3
2
1
0
EOSS
0
100
200
300
400
500
600
VDS, Drain to Source Voltage (V)
Figure 11. Eoss vs. Drain−to−Source Voltage
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4
NTMT125N60S5H
TYPICAL CHARACTERISTICS
1
D=0 is Single Pulse
0.1
0.01
D=0.00
D=0.01
D=0.02
D=0.05
D=0.10
D=0.20
D=0.50
Notes:
ZθJC(t)=0.82°C/W Max
PPDM
TJM=P=P xZ xZ(t)+T
DM θJC C
t1
Duty Cycle,D=t1/t2
t2
0.001
10−5
10−4
10−3
t, Rectangular Pulse Duration (s)
10−2
10−1
100
Figure 12. Transient Thermal Impedance
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5
NTMT125N60S5H
PACKAGE DIMENSIONS
TDFN4 8x8, 2P
CASE 520AB
ISSUE O
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6
NTMT125N60S5H
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ONSEMI
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