NTMT280N60S5Z [ONSEMI]
Power MOSFET, N-Channel, SUPERFET® V, Easy Drive with Zener Diode, 600 V, 13 A, 280 mΩ, Power88;
| 型号： | NTMT280N60S5Z |
| 厂家： | 
ONSEMI |
| 描述： | Power MOSFET, N-Channel, SUPERFET® V, Easy Drive with Zener Diode, 600 V, 13 A, 280 mΩ, Power88 |
| 文件： | 总7页 (文件大小：403K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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MOSFET - Power, Single
N-Channel, SUPERFET),
EASY with Zener Diode,
PQFN88-4L
600 V, 280 mW, 13 A
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
600 V
280 mW @ V = 10 V
13 A
GS
N−CHANNEL MOSFET
D
NTMT280N60S5Z
Description
G
SUPERFET V MOSFET Easy Drive series combines excellent
switching performance without sacrificing ease of use and EMI issues
for both hard and soft switching topologies. The Power88 package
which is an ultraslim SMD package offers excellent switching
performance by providing kelvin source configuration and lower
parasitic source inductance.
S
Features
650 V @ T = 150C
J
S2
S2
Typ. R
= 224 mW
DS(on)
S1
G
100% Avalanche Tested
Pb−Free, Halogen Free / BFR Free and are RoHS Compliant
Applications
TDFN4 8x8 2P
CASE 520AB
Computing / Display Power Supplies
Telecom / Server Power Supplies
Lighting / Charger / Adapter / Industrial Power Supplies
MARKING DIAGRAM
ABSOLUTE MAXIMUM RATINGS (T = 25C, Unless otherwise noted)
J
Parameter
Drain−to−Source Voltage
Symbol
Value
600
20
20
13
Unit
V
NTMT280
N60S5Z
AWLYWW
V
DSS
Gate−to−Source Voltage
V
GS
V
DC
AC (f > 1 Hz)
Continuous Drain Current
I
D
A
T
= 25C
= 100C
= 25C
= 25C
C
NTMT280N60S5Z = Specific Device Code
T
C
8
A
WL
Y
= Assembly Location
= Wafer Lot
= Year
Power Dissipation
T
T
P
D
89
W
A
C
Pulsed Drain Current (Note 1)
I
39
C
DM
WW
= Work Week
Pulsed Source Current (Body
Diode) (Note 1)
I
39
A
SM
Operating Junction and Storage Temperature T , T
−55 to
+150
C
J
STG
Range
ORDERING INFORMATION
Source Current (Body Diode)
I
13
82
A
S
†
Device
NTMT280N60S5Z
Package
Shipping
Single Pulse Avalanche
Energy
I = 2.9 A
G
E
AS
mJ
L
R
= 25 W
TDFN4
3000 / Tape &
Reel
Avalanche Current
I
AS
2.9
0.89
120
50
A
Repetitive Avalanche Energy (Note 1)
MOSFET dv/dt
E
AR
mJ
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
dv/dt
V/ns
Peak Diode Recovery dv/dt (Note 2)
Lead Temperature for Soldering Purposes
(1/8 from case for 10 seconds)
T
260
C
L
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
*Drain current limited by maximum junction temperature.
1. Repetitive rating: pulse−width limited by maximum junction temperature.
2. I 5.5 A, di/dt 200 A/s, V 400 V, starting T = 25C.
SD
DD
J
Semiconductor Components Industries, LLC, 2022
1
Publication Order Number:
November, 2022 − Rev. 0
NTMT280N60S5Z/D
NTMT280N60S5Z
THERMAL CHARACTERISTICS
Parameter
Symbol
Value
1.4
Unit
Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient
R
C/W
q
JC
R
45
q
JA
ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted)
J
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
V
I
= 0 V, I = 1 mA, T = 25_C
600
−
−
−
V
(BR)DSS
GS
D
J
Drain−to−Source Breakdown Voltage
Temperature Coefficient
DV
/
= 10 mA, Referenced to 25_C
−
630
mV/_C
(BR)DSS
D
DT
J
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
ON CHARACTERISTICS
I
V
GS
= 0 V, V = 600 V, T = 25_C
−
−
−
−
1
mA
mA
DSS
GSS
DS
J
I
V
= 20 V, V = 0 V
5
GS
DS
Drain−to−Source On Resistance
Gate Threshold Voltage
R
V
= 10 V, I = 5.5 A, T = 25_C
−
2.4
−
224
−
280
4
mW
V
DS(on)
GS
D
J
V
V
= V , I = 1 mA, T = 25_C
GS(th)
GS
DS
D
J
Forward Trans−conductance
g
FS
V
DS
= 20 V, I = 5.5 A
10.6
−
S
D
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
C
V
= 400 V, V = 0 V, f = 250 kHz
−
−
−
979
18.5
277
−
−
−
pF
ISS
DS
GS
Output Capacitance
C
OSS
Time Related Output Capacitance
C
I
= Constant, V = 0 V to 400 V,
OSS(tr.)
D DS
V
GS
= 0 V
Energy Related Output Capacitance
Total Gate Charge
C
V
= 0 V to 400 V, V = 0 V
−
−
−
−
−
32.2
18.1
4.54
4.96
5.1
−
−
−
−
−
OSS(er.)
DS
GS
Q
V
= 400 V, I = 5.5 A, V = 10 V
nC
G(tot)
DD
D
GS
Gate−to−Source Charge
Gate−to−Drain Charge
Gate Resistance
Q
GS
Q
GD
R
f = 1 MHz
W
G
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Rise Time
t
V
GS
I
= 0/10 V, V = 400 V,
−
−
−
−
16.1
4.62
53.4
4.7
−
−
−
−
ns
d(on)
DD
= 5.5 A, R = 12 W
D
G
t
r
Turn-Off Delay Time
Fall Time
t
d(off)
t
f
SOURCE-TO−DRAIN DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
Reverse Recovery Charge
V
I
= 5.5 A, V = 0 V, T = 25_C
−
−
−
−
1.2
−
V
SD
RR
SD
GS
J
t
V
= 0 V, I = 5.5 A,
230
2115
ns
nC
GS
SD
dI/dt = 100 A/ms, V = 400 V
DD
Q
−
RR
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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2
NTMT280N60S5Z
TYPICAL CHARACTERISTICS
30
25
20
15
10
5
1000
TJ=25°C
VDS=20V
100
10
V
GS=4V
V
GS=4.5V
VGS=5V
V
V
GS=6V
GS=7V
TJ=−55°C
TJ=25°C
VGS=10V
TJ=150°C
0
1
0
5
10
15
20
3
4
5
6
7
VDS, Drain to Source Voltage (V)
VGS, Gate to Source Voltage (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
500
400
300
200
100
0
1000
100
10
TJ=25°C
VGS=0V
1
TJ=150°C
TJ=25°C
TJ=−55°C
VGS=10V
VGS=20V
0.1
0
5
10
15
20
25
30
0
0.2
0.4
0.6
0.8
1
1.2
ID, Drain Current (A)
VSD, Diode Forward Voltage (V)
Figure 3. On−Resistance Variation vs. Drain
Figure 4. Diode Forward Voltage vs. Source
Current
Current and Gate Voltage
105
10
8
Ciss=Cgs+Cgd(Cds=shorted)
Coss=Cds+Cgd
Crss=Cgd
VGS=0V
TJ=25°C
f=250KHz
ID=5.5A
104
103
102
101
100
10−1
6
4
2
CISS
COSS
CRSS
V
V
DD=130V
DD=400V
0
0
100
200
300
400
500
600
0
2
4
6
8
10
12
14
16
18
20
VDS, Drain to Source Voltage (V)
QG, Gate Charge (nC)
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
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3
NTMT280N60S5Z
TYPICAL CHARACTERISTICS
1.2
1.15
1.1
3
VGS=0V
ID=10mA
ID=5.5A
VGS=10V
2.5
2
1.05
1
1.5
1
0.95
0.9
0.5
0.85
0.8
0
−75 −50 −25
0
25
50
75 100 125 150 175
−75 −50 −25
0
25
50
75 100 125 150 175
TJ, Junction Temperature (°C)
TJ, Junction Temperature (°C)
Figure 7. On−Resistance Variation vs.
Figure 8. Breakdown Voltage Variation vs.
Temperature
Temperature
14
12
10
8
6
4
2
0
25
50
75
100
125
150
VDS, Drain to Source Voltage (V)
TC, Case Temperature (°C)
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current vs. Case
Temperature
4.5
4
3.5
3
2.5
2
1.5
1
0.5
0
EOSS
0
100
200
300
400
500
600
VDS, Drain to Source Voltage (V)
Figure 11. Eoss vs. Drain−to−Source Voltage
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4
NTMT280N60S5Z
TYPICAL CHARACTERISTICS
10
D=0 is Single Pulse
1
0.1
D=0.00
D=0.01
D=0.02
D=0.05
D=0.10
D=0.20
D=0.50
Notes:
Z
T
(t)=1.4 C/W Max
JC =P
xZJC(t)(+t)T+T
P
DM
JM
DM
C
t1
Duty Cycle,D=t 1 /t
2
t2
0.01
−5
−4
−3
−2
−1
0
10
10
10
10
10
10
t, Rectangular Pulse Duration (s)
Figure 12. Transient Thermal Impedance
SENSEFET is a registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
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5
NTMT280N60S5Z
PACKAGE DIMENSIONS
TDFN4 8x8, 2P
CASE 520AB
ISSUE O
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6
NTMT280N60S5Z
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