NTMTS0D6N04CLTXG [ONSEMI]
Single N-Channel Power MOSFET 40V, 554.5A, 0.42mΩ, PQFN 8x8;
| 型号： | NTMTS0D6N04CLTXG |
| 厂家： | 
ONSEMI |
| 描述： | Single N-Channel Power MOSFET 40V, 554.5A, 0.42mΩ, PQFN 8x8 |
| 文件： | 总8页 (文件大小：310K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or
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liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws,
regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdonsemi and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
NTMTS0D6N04CL
Power MOSFET
40 V, 0.42 mW, 554.5 A, Single N−Channel
Features
• Small Footprint (8x8 mm) for Compact Design
• Low R
to Minimize Conduction Losses
• Low Q and Capacitance to Minimize Driver Losses
DS(on)
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G
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
Typical Applications
0.42 mW @ 10 V
0.66 mW @ 4.5 V
40 V
554.5 A
• Power Tools, Battery Operated Vacuums
• UAV/Drones, Material Handling
• BMS/Storage, Home Automation
D (5−8)
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Parameter
Drain−to−Source Voltage
Symbol
Value
40
Unit
V
V
DSS
G (1)
Gate−to−Source Voltage
V
GS
20
V
Continuous Drain
Steady
State
T
= 25°C
= 100°C
= 25°C
I
554.5
392.1
245.4
122.7
78.9
55.8
5.0
A
C
D
S (2−4)
Current R
(Note 2)
q
JC
T
C
N−CHANNEL MOSFET
Power Dissipation
(Note 2)
Steady
State
T
C
P
W
A
D
R
q
JC
T
C
= 100°C
Continuous Drain
Current R
Steady
State
T = 25°C
A
I
D
q
JA
T = 100°C
A
(Notes 1, 2)
Power Dissipation
Steady
State
T = 25°C
A
P
W
D
R
(Notes 1, 2)
q
JA
T = 100°C
A
2.5
Pulsed Drain Current
T = 25°C, t = 10 ms
I
DM
900
A
A
p
POWER 88
CASE 507AP
Operating Junction and Storage Temperature
Range
T , T
−55 to
+175
°C
J
stg
Source Current (Body Diode)
I
204.5
2058
A
S
MARKING DIAGRAM
Single Pulse Drain−to−Source Avalanche
E
AS
mJ
Energy (I
= 52.7 A)
L(pk)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
L
260
°C
XXXXXXXX
AWLYWW
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS
XXX = Device Code
(8 A−N characters max)
= Assembly Location
WL = 2−digit Wafer Lot Code
= Year Code
WW = Work Week Code
Parameter
Symbol
Value
0.61
Unit
A
Junction−to−Case − Steady State (Note 2)
Junction−to−Ambient − Steady State (Note 2)
R
°C/W
q
JC
Y
R
30.2
q
JA
2
1. Surface−mounted on FR4 board using a 1 in pad size, 1 oz. Cu pad.
2. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2018
1
Publication Order Number:
January, 2019 − Rev. 1
NTMTS0D6N04CL/D
NTMTS0D6N04CL
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
V
GS
= 0 V, I = 250 mA
40
V
(BR)DSS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/
I
D
= 250 mA, ref to 25°C
12.6
(BR)DSS
mV/°C
T
J
Zero Gate Voltage Drain Current
I
V
= 0 V,
T = 25°C
10
DSS
GS
DS
J
V
= 40 V
mA
T = 125°C
J
250
100
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
I
V
= 0 V, V = 20 V
nA
GSS
DS
GS
GS
V
V
= V , I = 250 mA
1.2
2.0
V
GS(TH)
DS
D
Negative Threshold Temperature Coefficient
Drain−to−Source On Resistance
V
/T
I
= 250 mA, ref to 25°C
−6.0
0.35
0.52
323
1.0
mV/°C
GS(TH)
J
D
R
V
GS
GS
= 10 V
= 4.5 V
I
= 50 A
= 50 A
0.42
0.66
DS(on)
D
D
mW
V
I
Forward Transconductance
Gate Resistance
g
FS
V
DS
=5 V, I = 50 A
S
D
R
T = 25°C
A
W
G
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
C
16013
6801
299
ISS
Output Capacitance
C
OSS
C
RSS
V
GS
= 0 V, f = 1 MHz, V = 20 V
pF
DS
Reverse Transfer Capacitance
Total Gate Charge
Q
126
G(TOT)
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Total Gate Charge
Q
22.5
39.9
38.4
265
G(TH)
V
= 4.5 V, V = 20 V; I = 50 A
nC
nC
GS
DS
D
Q
GS
GD
Q
Q
V
= 10 V, V = 20 V; I = 50 A
DS D
G(TOT)
GS
SWITCHING CHARACTERISTICS, V = 4.5 V (Note 4)
GS
Turn−On Delay Time
Rise Time
t
89.4
111
d(ON)
t
r
V
= 4.5 V, V = 20 V,
DS
GS
D
ns
V
I
= 50 A, R = 6 W
G
Turn−Off Delay Time
Fall Time
t
180
84.7
d(OFF)
t
f
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
T = 25°C
0.75
0.6
1.2
J
V
= 0 V,
= 50 A
GS
I
S
T = 125°C
J
Reverse Recovery Time
Charge Time
t
99.3
62.4
36.9
228
RR
t
a
ns
V
GS
= 0 V, dIS/dt = 100 A/ms,
I
= 50 A
S
Discharge Time
t
b
Reverse Recovery Charge
Q
nC
RR
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
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2
NTMTS0D6N04CL
TYPICAL CHARACTERISTICS
1000
4.0 V
1000
900
4.2 V
V
DS
= 10 V
900
800
700
600
500
400
300
200
800
700
600
500
400
300
200
3.6 V
V
= 4.6 V to 10 V
GS
3.4 V
T = 25°C
J
3.2 V
3.0 V
100
0
100
0
T = 125°C
J
T = −55°C
J
0
0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00
, DRAIN−TO−SOURCE VOLTAGE (V)
0
1
2
3
4
5
V
DS
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
12
10
8
1.4
1.2
1.0
0.8
0.6
0.4
T = 25°C
J
T = 25°C
D
J
I
= 50 A
6
V
= 4.5 V
= 10 V
GS
4
V
GS
2
0
0.2
0
1
2
3
4
5
6
7
8
9
10
10
60
110
160
210
260
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 3. On−Resistance vs. Gate−to−Source
Figure 4. On−Resistance vs. Drain Current and
Voltage
Gate Voltage
2.0
1E+06
1E+05
1E+04
1E+03
1E+02
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
V
= 10 V
= 50 A
GS
T = 150°C
J
I
D
T = 125°C
J
T = 85°C
J
T = 25°C
J
1E+01
1E+00
0.2
0
−55
−15
25
65
105
145
5
10
15
20
25
30
35
40
T , JUNCTION TEMPERATURE (°C)
J
V
, DRAIN−TO−SOURCE VOLTAGE (V)
DS
Figure 5. On−Resistance Variation with
Figure 6. Drain−to−Source Leakage Current
Temperature
vs. Voltage
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3
NTMTS0D6N04CL
TYPICAL CHARACTERISTICS
100K
10K
6
5
C
ISS
4
3
2
C
OSS
Q
Q
GD
GS
1K
V
= 20 V
DS
V
= 0 V
GS
C
T = 25°C
RSS
J
1
0
T = 25°C
J
I
D
= 50 A
f = 1 MHz
100
0.1
1
10
100
0
20
40
60
80
100
120
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Q , TOTAL GATE CHARGE (nC)
G
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source Voltage vs. Total
Charge
100
10
1E−05
1E−06
V
GS
= 0 V
V
V
= 4.5 V
= 20 V
= 50 A
GS
DS
I
D
t
t
t
r
d(off)
T = 175°C
J
T = 150°C
J
d(on)
T = 125°C
J
t
f
1
1E−07
1E−08
T = 25°C
J
T = −55°C
J
0.1
2
6
10 14 18 22 26 30 34 38 42 46 50
R , GATE RESISTANCE (W)
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
G
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
1000
100
1000
100
10
T
= 25°C
J(initial)
10 ms
T
= 25°C
C
0.5 ms
1 ms
10 ms
T
= 100°C
Single Pulse
≤ 10 V
J(initial)
V
GS
10
1
1
R
Limit
DS(on)
Thermal Limit
Package Limit
0.1
0.1
1
10
100
1000
0.00001
0.0001
0.001
0.01
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
TIME IN AVALANCHE (s)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. IPEAK vs. Time in Avalanche
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4
NTMTS0D6N04CL
TYPICAL CHARACTERISTICS
100
10
1
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
0.01
0.1
0.01
Single Pulse
0.001
0.000001 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (sec)
Figure 13. Thermal Characteristics
DEVICE ORDERING INFORMATION
Device
†
Marking
Package
Shipping
NTMTS0D6N04CLTXG
0D6N04CL
POWER 88
(Pb−Free)
3000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
www.onsemi.com
5
NTMTS0D6N04CL
PACKAGE DIMENSIONS
DFNW8 8.3x8.4, 2P
CASE 507AP
ISSUE O
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6
NTMTS0D6N04CL
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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