NTMTS1D5N08MC [ONSEMI]

Single N-Channel Power MOSFET 80V, 287A, 1.56mΩ, PQFN 8x8;


型号：	NTMTS1D5N08MC
厂家：	ONSEMI
描述：	Single N-Channel Power MOSFET 80V, 287A, 1.56mΩ, PQFN 8x8
文件：	总7页 (文件大小：408K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

MOSFET - Power, Single

N-Channel, DFNW8

80 V, 1.56 mW, 287 A

NTMTS1D5N08MC

Features

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• Small Footprint (8x8 mm) for Compact Design

• Low R

to Minimize Conduction Losses

DS(on)

• Low Q and Capacitance to Minimize Driver Losses

MAX

I MAX

(BR)DSS

DS(ON)

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

1.56 mW @ 10 V

4.0 mW @ 6 V

Compliant

80 V

287 A

Typical Applications

• Power Tools, Battery Operated Vacuums

• UAV/Drones, Material Handling

• BMS/Storage, Home Automation

D (5−8)

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

G (1)

Parameter

Drain−to−Source Voltage

Symbol

Value

Unit

DSS

S (2−4)

Gate−to−Source Voltage

N−CHANNEL MOSFET

Continuous Drain

= 25°C

287

Current R

(Note 2)

Steady

State

Power Dissipation

(Note 2)

250

Continuous Drain

Current R

T = 25°C

Steady

State

(Notes 1, 2)

Power Dissipation

3.3

(Notes 1, 2)

DFNW8

CASE 507AP

Pulsed Drain Current

= 25°C, t = 10 ms

3500

Operating Junction and Storage Temperature

Range

T , T

−55 to

+150

°C

stg

MARKING DIAGRAM

Single Pulse Drain−to−Source Avalanche

1441

Energy (I

= 31 A, L = 3 mH)

L(pk)

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

260

°C

1D5N08MC

AWLYWW

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

THERMAL RESISTANCE MAXIMUM RATINGS

1D5N08MC = Device Code

= Assembly Location

WL = 2−digit Wafer Lot Code

= Year Code

WW = Work Week Code

Parameter

Symbol

Value

0.5

Unit

Junction−to−Case − Steady State (Note 2)

Junction−to−Ambient − Steady State (Note 2)

°C/W

1. Surface−mounted on FR4 board using a 1 in pad size, 1 oz. Cu pad.

2. The entire application environment impacts the thermal resistance values shown,

they are not constants and are only valid for the particular conditions noted.

ORDERING INFORMATION

See detailed ordering, marking and shipping information in the

package dimensions section on page 5 of this data sheet.

Publication Order Number:

June, 2020 − Rev. 1

NTMTS1D5N08MC/D

NTMTS1D5N08MC

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)

Parameter

OFF CHARACTERISTICS

Symbol

Test Condition

Min

Typ

Max

Unit

Drain−to−Source Breakdown Voltage

= 0 V, I = 250 mA

(BR)DSS

Drain−to−Source Breakdown Voltage

Temperature Coefficient

= 250 mA, ref to 25°C

(BR)DSS

mV/°C

Zero Gate Voltage Drain Current

= 0 V,

T = 25°C

DSS

= 80 V

T = 125°C

250

100

Gate−to−Source Leakage Current

ON CHARACTERISTICS (Note 3)

Gate Threshold Voltage

= 0 V, V

20 V

GSS

= V , I = 650 mA

2.0

3.0

−8.3

1.10

1.75

219

0.9

4.0

mV/°C

GS(TH)

Negative Threshold Temperature Coefficient

Drain−to−Source On Resistance

Forward Transconductance

I = 650 mA, ref to 25°C

GS(TH)

= 10 V

= 6 V

= 80 A

= 58 A

1.56

4.0

DS(on)

= 5 V, I = 80 A

DS D

Gate Resistance

T = 25°C

CHARGES, CAPACITANCES & GATE RESISTANCE

Input Capacitance

7420 10,400

ISS

Output Capacitance

Reverse Transfer Capacitance

Total Gate Charge

2555

101

3600

175

140

= 0 V, f = 1 MHz, V = 40 V

OSS

RSS

G(TOT)

Threshold Gate Charge

Gate−to−Source Charge

Gate−to−Drain Charge

Output Charge

G(TH)

= 10 V, V = 40 V; I = 80 A

141

OSS

sync

Sync Charge

Plateau Voltage

plateau

SWITCHING CHARACTERISTICS, V = 10 V (Note 3)

Turn−On Delay Time

Rise Time

d(ON)

= 10 V, V = 40 V,

= 80 A, R = 6 W

Turn−Off Delay Time

Fall Time

d(OFF)

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

= 0 V, I = 2 A

0.7

0.8

1.2

1.3

= 0 V, I = 80 A

Reverse Recovery Time

Reverse Recovery Charge

Reverse Recovery Time

Reverse Recovery Charge

I = 40 A, di/dt = 300 A/ms

142

I = 40 A, di/dt = 1000 A/ms

209

335

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

3. Switching characteristics are independent of operating junction temperatures.

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NTMTS1D5N08MC

TYPICAL CHARACTERISTICS

300

10 V

8.0 V

5.5 V

5.0 V

= 4.5 V

6.0 V

200

100

5.0 V

6.0 V

8.0 V

10 V

= 4.5 V

100

200

300

, DRAIN−TO−SOURCE VOLTAGE (V)

I , DRAIN CURRENT (A)

Figure 1. On−Region Characteristics

Figure 2. Normalized On−Resistance vs. Drain

Current and Gate Voltage

2.0

1.8

1.6

= 80 A

= 10 V

1.4

1.2

1.0

T = 125°C

0.8

0.6

T = 25°C

−75 −50 −25

75 100 125 150

T , JUNCTION TEMPERATURE (°C)

, GATE−TO−SOURCE VOLTAGE (V)

Figure 3. Normalized On Resistance vs.

Junction Temperature

Figure 4. On−Resistance vs. Gate−to−Source

Voltage

300

200

300

100

= 0 V

= 5 V

T = 25°C

0.1

100

T = 150°C

0.01

T = 150°C

T = −55°C

T = 25°C

T = −55°C

0.001

0.2

0.4

0.6

0.8

1.0

1.2

, GATE−TO−SOURCE VOLTAGE (V)

, BODY DIODE FORWARD VOLTAGE (V)

Figure 5. Transfer Characteristics

Figure 6. Source−to−Drain Diode Forward

Voltage vs. Source Current

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NTMTS1D5N08MC

TYPICAL CHARACTERISTICS

100K

= 30 V

= 50 V

= 40 V

ISS

10K

OSS

RSS

100

f = 1 MHz

= 0 V

100

120

0.1

, DRAIN−TO−SOURCE VOLTAGE (V)

Q , GATE CHARGE (nC)

Figure 7. Gate Charge Characteristics

Figure 8. Capacitance vs. Drain−to−Source

Voltage

300

250

200

150

100

= 10 V

= 0.5°C/W

100

T = 25°C

= 6 V

T = 100°C

T = 150°C

0.01

0.1

100

125

150

t , TIME IN AVALANCHE (mS)

T , CASE TEMPERATURE (°C)

Figure 9. Unclamped Inductive Switching

Capability

Figure 10. Maximum Continuous Drain

Current vs. Case Temperature

100K

10K

10 ms

100

100 ms

= 25°C

= 0.5°C/W

1 ms

Single Pulse

100

10 ms

Limit

100 ms/

DS(on)

Thermal Limit

0.1

100

0.00001 0.0001 0.001

0.01

0.1

, DRAIN−TO−SOURCE VOLTAGE (V)

t, PULSE WIDTH (s)

Figure 11. Forward Biased Safe Operating

Area

Figure 12. Single Pulse Maximum Power

Dissipation

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NTMTS1D5N08MC

TYPICAL CHARACTERISTICS

Duty Cycle = 0.5

0.2

0.1

0.05

0.1

0.02

Notes:

(t) = r(t) x R

0.01

= 0.5°C/W

Single Pulse

Peak T = P

x Z

(t) + T

Duty Cycle, D = t /t

0.001

0.00001

0.0001

0.001

0.01

0.1

t, RECTANGULAR PULSE DURATION (s)

Figure 13. Transient Thermal Impedance

DEVICE ORDERING INFORMATION

Device

†

Marking

Package

Shipping

NTMTS1D5N08MC

NTMTS

1D5N08MC

DFNW8

(Pb−Free)

3000 / Tape & Reel

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

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MECHANICAL CASE OUTLINE

PACKAGE DIMENSIONS

TDFNW8 8.3x8.4, 2.0P, SINGLE COOL

CASE 507AP

ISSUE D

DATE 29 MAR 2021

GENERIC

MARKING DIAGRAM*

XXXX = Specific Device Code

= Assembly Location

WL = Wafer Lot Code

= Year Code

WW = Work Week Code

*This information is generic. Please refer to

device data sheet for actual part marking.

Pb−Free indicator, “G” or microdot “ G”,

may or may not be present. Some products

may not follow the Generic Marking.

Electronic versions are uncontrolled except when accessed directly from the Document Repository.

Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

DOCUMENT NUMBER:

DESCRIPTION:

98AON80534G

TDFNW8 8.3x8.4, 2.0P, SINGLE COOL

PAGE 1 OF 1

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NTMTS1D5N08MC [ONSEMI]

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