NTMYS029N08LHTWG [ONSEMI]
Power MOSFET 80 V, 22A, 29mΩ Single N-Channel;型号: | NTMYS029N08LHTWG |
厂家: | ONSEMI |
描述: | Power MOSFET 80 V, 22A, 29mΩ Single N-Channel |
文件: | 总7页 (文件大小:273K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
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MOSFET - Power, Single
N-Channel
80 V, 29 mW, 22 A
NTMYS029N08LH
Features
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• Small Footprint (5x6 mm) for Compact Design
• Low R
to Minimize Conduction Losses
DS(on)
• Low Q and Capacitance to Minimize Driver Losses
G
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
• LFPAK4 Package, Industry Standard
29 mW @ 10 V
38 mW @ 4.5 V
• These Devices are Pb−Free and are RoHS Compliant
80 V
22 A
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Parameter
Drain−to−Source Voltage
Symbol
Value
80
20
22
15
33
17
7
Unit
V
D (5)
V
DSS
Gate−to−Source Voltage
V
GS
V
Continuous Drain
Current R
Steady
State
T
= 25°C
= 100°C
= 25°C
I
D
A
C
q
JC
G (4)
T
C
(Notes 1, 3)
Power Dissipation
T
C
P
D
W
A
S (1,2,3)
N−CHANNEL MOSFET
R
(Note 1)
q
JC
T
C
= 100°C
Continuous Drain
Current R
Steady
State
T = 25°C
A
I
D
q
JA
T = 100°C
A
5
(Notes 1, 2, 3)
MARKING
DIAGRAM
Power Dissipation
T = 25°C
P
3.5
1.7
97
W
A
D
R
(Notes 1, 2)
q
JA
T = 100°C
A
D
Pulsed Drain Current
T = 25°C, t = 10 ms
I
DM
A
A
p
029N08
LH
AWLYW
Operating Junction and Storage Temperature
Range
T , T
−55 to
°C
J
stg
+175
LFPAK4
CASE 760AB
Source Current (Body Diode)
I
S
28
68
A
1
Single Pulse Drain−to−Source Avalanche
E
AS
mJ
S
S
S
G
Energy (I
= 1.0 A)
L(pk)
029N08LH = Specific Device Code
Lead Temperature for Soldering Purposes
T
260
°C
L
A
WL
Y
= Assembly Location
= Wafer Lot
= Year
(1/8″ from case for 10 s)
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
W
= Work Week
THERMAL RESISTANCE MAXIMUM RATINGS
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
Parameter
Symbol
Value
4.6
Unit
Junction−to−Case − Steady State
Junction−to−Ambient − Steady State (Note 2)
R
°C/W
q
JC
R
42
q
JA
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2
2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
© Semiconductor Components Industries, LLC, 2019
1
Publication Order Number:
February, 2020 − Rev. 0
NTMYS029N08LH/D
NTMYS029N08LH
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
V
GS
= 0 V, I = 250 mA
80
V
(BR)DSS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/
47.8
mV/°C
(BR)DSS
T
J
Zero Gate Voltage Drain Current
I
T = 25°C
10
mA
DSS
J
V
= 0 V,
GS
DS
V
= 80 V
T = 125°C
J
100
100
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
I
V
= 0 V, V = 20 V
nA
GSS
DS
GS
V
V
= V , I = 20 mA
1.2
2.0
V
GS(TH)
GS
DS
D
Threshold Temperature Coefficient
Drain−to−Source On Resistance
V
/T
−5.2
24
mV/°C
mW
GS(TH)
J
R
V
= 10 V
I
I
= 5 A
= 5 A
29
38
DS(on)
GS
D
V
GS
= 4.5 V
30
D
Forward Transconductance
g
FS
V
DS
= 8 V, I = 5 A
24
S
D
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
C
431
55
4
pF
ISS
Output Capacitance
C
OSS
C
RSS
V
= 0 V, f = 1 MHz, V = 40 V
DS
GS
Reverse Transfer Capacitance
Total Gate Charge
Q
Q
V
GS
= 10 V, V = 40 V; I = 10 A
9
nC
nC
G(TOT)
G(TOT)
DS
D
Total Gate Charge
4
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Plateau Voltage
Q
1
G(TH)
Q
1.7
1.4
3
V
GS
= 4.5 V, V = 40 V; I = 10 A
GS
GD
GP
DS
D
Q
V
V
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time
t
8
6
ns
d(ON)
Rise Time
t
r
V
= 4.5 V, V = 64 V,
DS
GS
D
I
= 10 A, R = 2.5 W
G
Turn−Off Delay Time
t
12
4
d(OFF)
Fall Time
t
f
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
T = 25°C
0.82
0.69
25
1.2
V
SD
J
V
= 0 V,
GS
S
I
= 5 A
T = 125°C
J
Reverse Recovery Time
Charge Time
t
ns
RR
t
t
17
a
V
GS
= 0 V, dIs/dt = 100 A/ms,
I
S
= 10 A
Discharge Time
8
b
Reverse Recovery Charge
Q
16
nC
RR
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
5. Switching characteristics are independent of operating junction temperatures.
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2
NTMYS029N08LH
TYPICAL CHARACTERISTICS
20
20
10 V to 3.4 V
18
16
14
12
10
8
V
DS
= 8 V
V
GS
= 3.2 V
3.0 V
10
T = 25°C
J
2.8 V
6
4
2
0
T = 125°C
J
T = −55°C
J
0
0
1
2
3
4
5
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5 4.0
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
35
30
63
53
43
33
T = 25°C
J
T = 25°C
D
J
I
= 5 A
V
= 4.5 V
= 10 V
GS
25
20
V
GS
23
13
3
4
5
6
7
8
9
10
1
2
3
4
5
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 3. On−Resistance vs. Gate−to−Source
Figure 4. On−Resistance vs. Drain Current and
Voltage
Gate Voltage
2.5
2.0
1.5
100
10
V
= 10 V
= 5 A
GS
I
D
T = 175°C
J
T = 150°C
J
T = 125°C
J
1
T = 85°C
J
0.1
0.01
T = 25°C
J
1.0
0.5
0.001
0.0001
−50 −25
0
25
50
75 100 125 150 175
5
15
V
25
35
45
55
65
75
T , JUNCTION TEMPERATURE (°C)
J
, DRAIN−TO−SOURCE VOLTAGE (V)
DS
Figure 5. On−Resistance Variation with
Figure 6. Drain−to−Source Leakage Current
Temperature
vs. Voltage
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3
NTMYS029N08LH
TYPICAL CHARACTERISTICS
10K
1K
10
9
8
C
7
ISS
6
5
4
3
100
C
OSS
RSS
Q
Q
GD
GS
10
1
V
DS
= 40 V
V
= 0 V
GS
2
C
T = 25°C
T = 25°C
J
J
1
0
I
D
= 10 A
f = 1 MHz
0
10
20
30
40
50
60
70
80
0
1
2
3
4
5
6
7
8
9
10
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Q , TOTAL GATE CHARGE (nC)
G
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source vs. Total Charge
100
0.5
V = 0 V
GS
V
V
= 4.5 V
= 64 V
GS
DD
I
D
= 50 A
t
d(off)
10
t
d(on)
t
r
t
f
T = 25°C
T = −55°C
T = 125°C
J
J
J
0.1
1
1
10
R , GATE RESISTANCE (W)
50
0.3
0.4
0.5
, SOURCE−TO−DRAIN VOLTAGE (V)
SD
0.6
0.7
0.8
0.9
1.0
V
G
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
1000
100
10
V
≤ 10 V
GS
Single Pulse
= 25°C
T
C
100
10
T
= 25°C
J(initial)
1
10 ms
0.5 ms
1 ms
1
T
= 100°C
J(initial)
R
Limit
DS(on)
Thermal Limit
Package Limit
10 ms
0.1
0.1
0.1
1
10
100
1000
0.00001
0.0001
0.001
0.01
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
TIME IN AVALANCHE (s)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. IPEAK vs. Time in Avalanche
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4
NTMYS029N08LH
TYPICAL CHARACTERISTICS
100
10
1
Duty Cycle = 0.5
0.2
0.1
0.05
0.01
0.02
0.1
0.01
Single Pulse
0.001
0.0000001 0.000001 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (sec)
Figure 13. Thermal Response
DEVICE ORDERING INFORMATION
Device
†
Marking
Package
Shipping
NTMYS029N08LHTWG
029N08LH
LFPAK4
(Pb−Free)
3000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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5
NTMYS029N08LH
PACKAGE DIMENSIONS
LFPAK4 5x6
CASE 760AB
ISSUE B
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Email Requests to: orderlit@onsemi.com
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