NTP30N06 [ONSEMI]
Power MOSFET 30 Amps, 60 Volts; 功率MOSFET 30安培， 60伏
| 型号： | NTP30N06 |
| 厂家： | 
ONSEMI |
| 描述： | Power MOSFET 30 Amps, 60 Volts |
| 文件： | 总7页 (文件大小：72K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NTP30N06, NTB30N06
Power MOSFET
30 Amps, 60 Volts
N−Channel TO−220 and D2PAK
Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls and bridge
circuits.
http://onsemi.com
30 AMPERES, 60 VOLTS
Features
RDS(on) = 42 mW
• Pb−Free Packages are Available
N−Channel
D
Typical Applications
• Power Supplies
• Converters
• Power Motor Controls
• Bridge Circuits
G
S
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
4
Rating
Symbol Value
Unit
Vdc
Vdc
Vdc
Drain−to−Source Voltage
V
60
60
DSS
DGR
4
Drain−to−Gate Voltage (R = 10 MW)
V
GS
1
2
Gate−to−Source Voltage
− Continuous
2
TO−220AB
CASE 221A
STYLE 5
3
D PAK
V
V
"20
"30
GS
GS
CASE 418B
STYLE 2
− Non−Repetitive (t v10 ms)
p
1
2
Drain Current
3
− Continuous @ T = 25°C
I
I
27
15
80
Adc
Apk
A
D
D
− Continuous @ T = 100°C
A
MARKING DIAGRAMS
& PIN ASSIGNMENTS
− Single Pulse (t v10 ms)
I
DM
p
Total Power Dissipation @ T = 25°C
Derate above 25°C
P
88.2
0.59
W
W/°C
A
D
4
4
Drain
Drain
Operating and Storage Temperature Range
T , T
−55 to
+175
°C
J
stg
NTx
30N06G
AYWW
Single Pulse Drain−to−Source Avalanche
E
101
mJ
AS
Energy − Starting T = 25°C
J
NTx30N06G
AYWW
(V = 50 Vdc, V = 10 Vdc, L = 0.3 mH
DD
GS
I
= 26 A, V = 60 Vdc)
DS
L(pk)
1
Gate
3
1
2
3
Thermal Resistance, Junction−to−Case
R
1.7
°C/W
°C
q
JC
Source
Gate Drain Source
Maximum Lead Temperature for Soldering
Purposes, 1/8 in from case for 10 seconds
T
260
L
2
Drain
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
NTx30N06 = Device Code
x
A
Y
= B or P
= Assembly Location
= Year
WW
G
= Work Week
= Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
©
Semiconductor Components Industries, LLC, 2005
1
Publication Order Number:
August, 2005 − Rev. 1
NTP30N06/D
NTP30N06, NTB30N06
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage (Note 1)
(V = 0 Vdc, I = 250 mAdc)
V
Vdc
(BR)DSS
60
−
71.1
70
−
−
GS
D
Temperature Coefficient (Positive)
mV/°C
mAdc
Zero Gate Voltage Drain Current
I
I
DSS
GSS
(V = 60 Vdc, V = 0 Vdc)
−
−
−
−
1.0
10
DS
GS
(V = 60 Vdc, V = 0 Vdc, T = 150°C)
DS
GS
J
Gate−Body Leakage Current (V
=
20 Vdc, V = 0 Vdc)
−
−
100
nAdc
Vdc
GS
DS
ON CHARACTERISTICS (Note 1)
Gate Threshold Voltage (Note 1)
V
GS(th)
(V = V , I = 250 mAdc)
Threshold Temperature Coefficient (Negative)
2.0
−
3.05
7.3
4.0
−
DS
GS
D
mV/°C
mW
Static Drain−to−Source On−Resistance (Note 1)
R
V
DS(on)
(V = 10 Vdc, I = 15 Adc)
−
35
42
GS
D
Static Drain−to−Source On−Voltage (Note 1)
(V = 10 Vdc, I = 30 Adc)
Vdc
DS(on)
−
−
1.1
0.98
1.5
−
GS
D
(V = 10 Vdc, I = 15 Adc, T = 150°C)
GS
D
J
Forward Transconductance (Note 1) (V = 7.0 Vdc, I = 15 Adc)
g
FS
−
16
−
mhos
pF
DS
D
DYNAMIC CHARACTERISTICS
Input Capacitance
C
iss
−
−
−
850
250
68
1200
350
(V = 25 Vdc, V = 0 Vdc,
DS
GS
Output Capacitance
C
oss
f = 1.0 MHz)
Transfer Capacitance
C
rss
100
SWITCHING CHARACTERISTICS (Note 2)
Turn−On Delay Time
t
−
−
−
−
−
−
−
11
36
25
80
50
60
46
−
ns
d(on)
Rise Time
t
r
(V = 30 Vdc, I = 30 Adc,
DD
D
V
= 10 Vdc, R = 9.1 W) (Note 1)
G
GS
Turn−Off Delay Time
Fall Time
t
24
d(off)
t
31
f
Gate Charge
Q
T
Q
1
Q
2
23.4
5.1
11
nC
(V = 48 Vdc, I = 30 Adc,
DS
D
V
= 10 Vdc) (Note 1)
GS
−
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage
(I = 30 Adc, V = 0 Vdc) (Note 1)
V
SD
−
−
1.03
1.05
1.15
−
Vdc
ns
S
GS
(I = 30 Adc, V = 0 Vdc, T = 150°C)
S
GS
J
Reverse Recovery Time
t
−
−
−
−
52
38
−
−
−
−
rr
(I = 30 Adc, V = 0 Vdc,
S
GS
t
a
dI /dt = 100 A/ms) (Note 1)
S
t
15
b
Reverse Recovery Stored Charge
Q
0.094
mC
RR
1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
2. Switching characteristics are independent of operating junction temperatures.
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2
NTP30N06, NTB30N06
60
50
40
30
60
V
≥ 10 V
V
= 10 V
DS
GS
8 V
9 V
50
40
30
20
7 V
6.5 V
6 V
20
10
0
5.5 V
T = 25°C
J
5 V
10
0
T = 100°C
J
4.5 V
T = −55°C
J
0
1
2
3
4
5
6
2
4
6
8
10
V
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
DS
V
, GATE−TO−SOURCE VOLTAGE (VOLTS)
GS
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
0.09
0.09
V
= 10 V
V
= 15 V
GS
GS
0.08
0.07
0.06
0.05
0.04
0.08
0.07
0.06
0.05
0.04
T = 100°C
J
T = 100°C
J
T = 25°C
J
T = 25°C
J
0.03
0.03
T = −55°C
J
T = −55°C
J
0.02
0
0.02
0
0
10
20
30
40
50
60
0
10
20
30
40
50
60
I , DRAIN CURRENT (AMPS)
D
I , DRAIN CURRENT (AMPS)
D
Figure 3. On−Resistance versus
Gate−to−Source Voltage
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
10000
1000
2.2
2
V
= 0 V
GS
I
V
= 15 A
D
= 10 V
GS
1.8
1.6
1.4
T = 150°C
J
100
10
1
1.2
1
T = 100°C
J
0.8
0.6
−50 −25
0
25
50
75
100 125 150 175
0
10
20
30
40
50
60
T , JUNCTION TEMPERATURE (°C)
J
V
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
DS
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
versus Voltage
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3
NTP30N06, NTB30N06
12
2400
2000
1600
1200
800
400
0
V
= 0 V
V
= 0 V
GS
T = 25°C
DS
J
Q
T
10
8
V
GS
C
iss
Q
Q
2
1
6
4
2
0
C
rss
C
iss
C
oss
I
= 30 A
D
C
rss
T = 25°C
J
V
V
DS
GS
10
5
0
5
10
15
20
25
0
4
8
12
16
20
24
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE
(VOLTS)
Q , TOTAL GATE CHARGE (nC)
g
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source and
Drain−to−Source Voltage versus Total Charge
1000
32
24
16
8
V
I
V
= 30 V
= 30 A
= 10 V
V
= 0 V
DS
GS
GS
T = 25°C
J
D
100
10
1
t
t
f
r
t
d(off)
t
d(on)
0
0.6
1
10
R , GATE RESISTANCE (W)
100
0.68
0.76
, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
SD
0.84
0.92
1
1.08
1.16
V
G
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
Figure 10. Diode Forward Voltage versus
Current
1000
100
120
100
V
= 20 V
I
= 26 A
GS
D
SINGLE PULSE
= 25°C
T
C
80
60
10 ms
1 ms
10
1
100 ms
40
20
0
10 ms
dc
R
Limit
DS(on)
Thermal Limit
Package Limit
0.1
0.1
1
10
100
25
50
75
100
125
150
175
V
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
DS
T , STARTING JUNCTION TEMPERATURE (°C)
J
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
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4
NTP30N06, NTB30N06
1
D = 0.5
0.2
0.1
P
(pk)
R
(t) = r(t) R
q
JC
q
JC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
0.05
t
1
1
0.01
t
2
T
− T = P
R (t)
q
JC
J(pk)
C
(pk)
DUTY CYCLE, D = t /t
SINGLE PULSE
1
2
0.1
0.0001
0.001
0.01
0.1
1
10
t, TIME (s)
Figure 13. Thermal Response
di/dt
I
S
t
rr
t
t
b
a
TIME
0.25 I
t
S
p
I
S
Figure 14. Diode Reverse Recovery Waveform
ORDERING INFORMATION
Device
†
Package
Shipping
NTP30N06
TO−220AB
50 Units / Rail
50 Units / Rail
50 Units / Rail
2
NTB30N06
D PAK
2
NTB30N06G
D PAK
(Pb−Free)
2
NTB30N06T4
800 Units / Tape & Reel
800 Units / Tape & Reel
D PAK
2
NTB30N06T4G
D PAK
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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5
NTP30N06, NTB30N06
PACKAGE DIMENSIONS
D2PAK
CASE 418B−04
ISSUE J
NOTES:
C
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 418B−01 THRU 418B−03 OBSOLETE,
NEW STANDARD 418B−04.
E
V
W
−B−
4
INCHES
DIM MIN MAX
MILLIMETERS
MIN
MAX
A
B
C
D
E
F
G
H
J
0.340 0.380
0.380 0.405
0.160 0.190
0.020 0.035
0.045 0.055
0.310 0.350
0.100 BSC
8.64
9.65 10.29
4.06
0.51
1.14
7.87
9.65
A
4.83
0.89
1.40
8.89
S
1
2
3
2.54 BSC
−T−
SEATING
PLANE
K
0.080
0.018 0.025
0.090 0.110
0.110
2.03
0.46
2.29
1.32
7.11
5.00 REF
2.00 REF
0.99 REF
2.79
0.64
2.79
1.83
8.13
W
J
G
K
L
0.052 0.072
0.280 0.320
0.197 REF
0.079 REF
0.039 REF
H
M
N
P
R
S
V
D 3 PL
M
M
0.13 (0.005)
T B
0.575 0.625 14.60 15.88
0.045 0.055 1.14 1.40
STYLE 2:
PIN 1. GATE
VARIABLE
CONFIGURATION
ZONE
2. DRAIN
3. SOURCE
4. DRAIN
N
P
R
U
L
L
L
M
M
M
F
F
F
VIEW W−W
1
VIEW W−W
2
VIEW W−W
3
SOLDERING FOOTPRINT*
8.38
0.33
1.016
0.04
10.66
0.42
5.08
0.20
3.05
0.12
17.02
0.67
mm
inches
ǒ
Ǔ
SCALE 3:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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6
NTP30N06, NTB30N06
PACKAGE DIMENSIONS
TO−220
CASE 221A−09
ISSUE AA
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
SEATING
PLANE
−T−
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
C
S
B
F
T
4
INCHES
DIM MIN MAX
MILLIMETERS
MIN
14.48
9.66
4.07
0.64
3.61
2.42
2.80
0.46
12.70
1.15
4.83
2.54
2.04
1.15
5.97
0.00
1.15
−−−
MAX
15.75
10.28
4.82
0.88
3.73
2.66
3.93
0.64
14.27
1.52
5.33
3.04
2.79
1.39
6.47
1.27
−−−
A
K
Q
Z
A
B
C
D
F
0.570
0.380
0.160
0.025
0.142
0.095
0.110
0.018
0.500
0.045
0.190
0.100
0.080
0.045
0.235
0.000
0.045
0.620
0.405
0.190
0.035
0.147
0.105
0.155
0.025
0.562
0.060
0.210
0.120
0.110
0.055
0.255
0.050
−−−
1
2
3
U
H
G
H
J
K
L
L
R
J
N
Q
R
S
T
V
G
D
U
V
Z
N
−−− 0.080
2.04
STYLE 5:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
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NTP30N06/D
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