NTP360N80S3Z_技术文档

MOSFET – Power,

N-Channel, SUPERFET⁾III

800 V, 360 mW, 13 A

NTP360N80S3Z

Description

www.onsemi.com

800 V SUPERFET III MOSFET is ON Semiconductor’s high

performance MOSFET family offering 800 V breakdown voltage.

New 800 V SUPERFET III MOSFET which is optimized for

primary switch of flyback converter, enables lower switching losses

and case temperature without sacrificing EMI performance thanks to

its optimized design. In addition, internal Zener Diode significantly

improves ESD capability.

This new family of 800 V SUPERFET III MOSFET enables to

make more efficient, compact, cooler and more robust applications

because of its remarkable performance in switching power

applications such as Laptop adapter, Audio, Lighting, ATX power and

industrial power supplies.

V

R

MAX

I MAX

D

(BR)DSS

DS(ON)

800 V

360 mW

13 A

D

G

Features

• Typ. R

= 300 mW

DS(on)

S

• Ultra Low Gate Charge (Typ. Q = 25.3 nC)

g

POWER MOSFET

• Low Stored Energy in Output Capacitance (Eoss = 2.72 mJ @ 400 V)

• 100% Avalanche Tested

• ESD Improved Capability with Zener Diode

• RoHS Compliant

G

Applications

D

S

TO−220

CASE 340AT

• Adapters / Chargers

• LED Lighting

• AUX Power

• Audio

MARKING DIAGRAM

• Industrial Power

&Z&3&K

NTP360

N80S3Z

&Z

&3

= Assembly Plant Code

= Data Code (Year & Week)

= Lot

&K

NTP360N80S3Z

= Specific Device Code

ORDERING INFORMATION

See detailed ordering and shipping information on page 2 of

this data sheet.

1

Publication Order Number:

April, 2020 − Rev. 0

NTP360N80S3Z/D

NTP360N80S3Z

ABSOLUTE MAXIMUM RATINGS (T = 25°C, unless otherwise noted)

J

Symbol

V

Parameter

Value

800

Unit

V

Drain−to−Source Voltage

DSS

V

GS

Gate−to−Source Voltage

DC

20

V

AC (f > 1 Hz)

30

I

D

Drain Current

Continuous (T = 25°C)

13

A

C

Continuous (T = 100°C)

8.2

C

I

Drain Current

Pulsed (Note 1)

32.5

40

A

mJ

A

DM

E

Single Pulsed Avalanche Energy (Note 2)

Avalanche Current (Note 2)

Repetitive Avalanche Energy (Note 1)

MOSFET dv/dt

AS

I

2.0

E

0.96

100

mJ

V/ns

AR

dv/dt

Peak Diode Recovery dv/dt (Note 3)

Power Dissipation

10

P

(T = 25°C)

96

W

W/°C

°C

D

C

Derate Above 25°C

0.768

−55 to +150

260

T , T

Operating and Storage Temperature Range

J

STG

T

Lead Temperature Soldering Reflow for Soldering Purposes

(1/8″ from Case for 10 seconds)

°C

L

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality

should not be assumed, damage may occur and reliability may be affected.

1. Repetitive rating: pulse−width limited by maximum junction temperature.

2. I = 2.0 A, R = 25 W, starting T = 25°C.

AS

G

J

3. I ≤ 3.25 A, di/dt ≤ 200 A/ms, V ≤ 400 V, starting T = 25°C.

SD

DD

J

THERMAL RESISTANCE RATINGS

Symbol

Parameter

Value

1.3

Unit

R

Junction−to−Case − Steady State

Junction−to−Ambient − Steady State

_C/W

q

JC

JA

R

62.5

q

PACKAGE MARKING AND ORDERING INFORMATION

Part Number

Top Marking

Package

Packing Method

Reel Size

Tape Width

N/A

Quantity

NTP360N80S3Z

TO−220

Tube

N/A

50 Units

www.onsemi.com

2

NTP360N80S3Z

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

J

Symbol

Parameter

Test Conditions

Min

Typ

Max

Unit

OFF CHARACTERISTICS

BV

Drain−to−Source Breakdown Voltage

800

900

V

I

= 0 V, I = 1 mA, T = 25_C

DSS

GS

D

J

= 0 V, I = 1 mA, T = 150_C

GS

D

J

DBV

/ DT

Breakdown Voltage Temperature

Coefficient

= 1 mA, Referenced to 25_C

1.1

0.8

V/_C

DSS

J

D

I

Zero Gate Voltage Drain Current

V

DS

V

DS

V

GS

= 800 V, V = 0 V

1

mA

DSS

GS

= 640 V, T = 125_C

C

I

Gate−to−Body Leakage Current

= 20 V, V = 0 V

DS

mA

GSS

ON CHARACTERISTICS

V

Gate Threshold Voltage

V

GS

V

GS

V

DS

= V , I = 0.3 mA

2.2

3.8

V

mW

S

GS(th)

DS(on)

DS

D

R

Static Drain−to−Source On Resistance

Forward Transconductance

= 10 V, I = 6.5 A

300

360

D

g

FS

= 20 V, I = 6.5 A

13.8

D

DYNAMIC CHARACTERISTICS

C

Input Capacitance

V

= 400 V, V = 0 V, f = 250 kHz

1143

18.1

236.4

34

pF

nC

W

iss

DS

GS

C

Output Capacitance

oss

C

Effective Output Capacitance

Energy Related Output Capacitance

Total Gate Charge at 10 V

Gate−to−Source Gate Charge

Gate−to−Drain “Miller” Charge

Equivalent Series Resistance

V

DS

V

DS

V

DS

= 0 V to 400 V, V = 0 V

GS

oss(eff.)

C

= 0 V to 400 V, V = 0 V

GS

oss(er.)

Q

= 400 V, I = 6.5 A, V = 10 V

25.3

5.3

g(tot)

D

GS

(Note 4)

Q

gs

Q

8.3

gd

ESR

f = 1 MHz

4

SWITCHING CHARACTERISTICS

t

Turn-On Delay Time

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

V

= 400 V, I = 6.5 A, V = 10 V,

21.2

18.5

110

ns

d(on)

DD

g

D

GS

R = 25 W

t

r

(Note 4)

t

d(off)

t

f

17.7

SOURCE-DRAIN DIODE CHARACTERISTICS

I

Maximum Continuous Source−to−Drain Diode Forward Current

Maximum Pulsed Source−to−Drain Diode Forward Current

13

32.5

1.2

A

S

I

SM

V

SD

Source−to−Drain Diode Forward Voltage

Reverse Recovery Time

V

= 0 V, I = 6.5 A

V

GS

SD

t

= 0 V, I = 3.25 A,

370

3.0

ns

mC

rr

GS

SD

dI /dt = 100 A/ms

F

Q

Reverse Recovery Charge

rr

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

4. Essentially independent of operating temperature typical characteristics.

SUPERFET is a registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or

other countries.

www.onsemi.com

3

NTP360N80S3Z

TYPICAL CHARACTERISTICS

40

35

30

25

20

15

100

T = 25°C

J

V

DS

= 20 V

V

GS

= 20 V

7.0 V

10 V

5.5 V

5.0 V

10

T = 25°C

J

10

5

4.5 V

T = 150°C

T = −55°C

J

0

1

0

5

10

15

20

2

0

3

4

5

6

V

, DRAIN−TO−SOURCE VOLTAGE (V)

V

, GATE−TO−SOURCE VOLTAGE (V)

DS

GS

Figure 1. On−Region Characteristics

Figure 2. Transfer Characteristics

1.00

0.75

0.50

V

= 0 V

GS

10

1

V

GS

= 10 V

V

= 20 V

GS

0.1

0.25

0

0.01

T = 150°C

J

T = 25°C

J

T = −55°C

J

0.001

0

5

10

15

20

25

30

35

40

0.2

0.4

0.6

0.8

1.0

1.2

I , DRAIN CURRENT (A)

D

V

, BODY DIODE FORWARD VOLTAGE (V)

SD

Figure 3. On Resistance vs. Drain Current

Figure 4. Diode Forward Voltage vs. Current

100K

10K

1K

10

8

V

DD

= 130 V

I

D

= 6.5 A

V

DD

= 400 V

C

iss

6

4

100

10

C

oss

f = 250 kHz

V

= 0 V

= C

GS

C

rss

oss

iss

gd

2

0

1

= C + C

= C + C (C = shorted)

ds

gd

gs

gd

ds

0.1

0.01

0.1

1

10

1K

6

12

18

24

30

V

DS

, DRAIN−TO−SOURCE VOLTAGE (V)

Q , TOTAL GATE CHARGE (nC)

G

Figure 5. Capacitance Characteristics

Figure 6. Gate Charge Characteristics

www.onsemi.com

4

NTP360N80S3Z

TYPICAL CHARACTERISTICS

1.2

2.8

I

D

= 10 mA

I

D

= 6.5 A

V

GS

= 10 V

2.4

2.0

1.6

1.2

1.1

1.0

0.9

0.8

0.4

−75 −50 −25

0

25

50 75 100 125 150 175

−75 −50 −25

0

25

50 75 100 125 150 175

T , JUNCTION TEMPERATURE (°C)

J

T , JUNCTION TEMPERATURE (°C)

J

Figure 7. Normalized BV_DSSvs. Temperature

Figure 8. On−Resistance Variation vs.

Temperature

7

6

5

100

10

10 ms

100 ms

4

3

2

1 ms

1

10 ms

0.1

DC

Single Pulse

1

0

T

C

= 25°C

0.01

1

10

100

1000

0

100

200 300 400

, DRAIN−TO−SOURCE VOLTAGE (V)

DS

500

600 700 800

V

DS

, DRAIN−TO−SOURCE VOLTAGE (V)

V

Figure 9. Safe Operating Area

Figure 10. E_ossvs. Drain−to−Source Voltage

10

1

60% Duty Cycle

50%

20%

P

DM

10%

5%

0.1

t

1

2%

t

2

1%

Z

R

(t) = r(t) x R

q

JC

0.01

= 1.3°C/W

q

JC

Single Pulse

Peak T = P

x Z (t) + T

q

JC C

J

DM

Duty Cycle, D = t / t

1

2

0.001

0.00001

0.0001

0.001

0.01

0.1

1

10

100

t , RECTANGULAR PULSE DURATION (sec)

1

Figure 11. Transient Thermal Impedance

www.onsemi.com

5

NTP360N80S3Z

V

GS

R

Q

g

L

V

DS

Q

gs

gd

V

GS

DUT

I

G

= Const.

Charge

Figure 12. Gate Charge Test Circuit & Waveform

R

L

V

DS

GS

90%

10%

90%

V

DS

V

DD

V

GS

R

G

10%

V

DUT

V

GS

t

r

t

f

t

d(off)

d(on)

t

on

t

off

Figure 13. Resistive Switching Test Circuit & Waveforms

L

2

1

2

E_AS

+

@ LI_AS

V

DS

BV

DSS

I

D

I

AS

R

G

V

DD

I (t)

D

DUT

V

DD

V

GS

V

DS

(t)

t

p

Time

t

p

Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms

www.onsemi.com

6

NTP360N80S3Z

+

DUT

V

SD

−

I

SD

L

Driver

R

G

Same Type

as DUT

V

DD

V

GS

− dv/dt controlled by R

G

− I controlled by pulse period

SD

Gate Pulse Width

D +

Gate Pulse Period

V

GS

10 V

(Driver)

I

, Body Diode Forward Current

FM

I

di/dt

SD

(DUT)

I

RM

Body Diode Reverse Current

Body Diode Recovery dv/dt

V

DS

V

DD

V

SD

(DUT)

Body Diode

Forward Voltage Drop

Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms

www.onsemi.com

7

MECHANICAL CASE OUTLINE

PACKAGE DIMENSIONS

TO−220−3LD

CASE 340AT

ISSUE A

DATE 03 OCT 2017

Scale 1:1

Electronic versions are uncontrolled except when accessed directly from the Document Repository.

Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

DOCUMENT NUMBER:

DESCRIPTION:

98AON13818G

TO−220−3LD

PAGE 1 OF 1

ON Semiconductor and

are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.

ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding

the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically

disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the

rights of others.

www.onsemi.com

onsemi,

, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates

and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.

A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any

products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the

information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use

of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products

and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information

provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may

vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license

under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems

or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should

Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,

and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death

associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal

Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

ADDITIONAL INFORMATION

TECHNICAL PUBLICATIONS:

Technical Library: www.onsemi.com/design/resources/technical−documentation

onsemi Website: www.onsemi.com

ONLINE SUPPORT: www.onsemi.com/support

For additional information, please contact your local Sales Representative at

www.onsemi.com/support/sales




型号：	NTP360N80S3Z
厂家：	ONSEMI
描述：	MOSFET – Power, N-Channel, SUPERFET® III, 800 V, 13 A, 360 mΩ, TO-220 局域网开关脉冲晶体管
文件：	总9页 (文件大小：277K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

NTP360N80S3Z [ONSEMI]

相关型号：

NTP4302

NTP4302G

NTP45N06

NTP45N06/D

NTP45N06D

NTP45N06G

NTP45N06L

NTP45N06L/D

NTP45N06LG

NTP476M10TRC(100)

NTP476M10TRC(100)3KF

NTP476M10TRC(100)F