NTPF100N60S5H [ONSEMI]
Power MOSFET, N-Channel, SUPERFET® V, FAST, 600 V, 27 A, 100 mΩ, TO-220F;
| 型号： | NTPF100N60S5H |
| 厂家： | 
ONSEMI |
| 描述： | Power MOSFET, N-Channel, SUPERFET® V, FAST, 600 V, 27 A, 100 mΩ, TO-220F |
| 文件： | 总6页 (文件大小：144K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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MOSFET - Power, Single
N-Channel, SUPERFET),
FAST, TO220FP
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
600 V
100 mW @ 10 V
27 A
N−CHANNEL MOSFET
600 V, 100 mW, 27 A
D
NTPF100N60S5H
Description
The SUPERFET V MOSFET FAST series helps maximize system
efficiency by the extremely low switching losses in hard switching
G
application.
Features
S
• 650 V @ T = 150°C / Typ. R
= 80 mW
J
DS(on)
• 100% Avalanche Tested
• Pb−Free, Halogen Free / BFR Free and are RoHS Compliant
Applications
• Telecom / Server Power Supplies
G
D
S
• EV Charger / UPS / Solar / Industrial Power Supplies
ABSOLUTE MAXIMUM RATINGS (T = 25°C, Unless otherwise noted)
J
TO−220 FULLPAK
Parameter
Drain−to−Source Voltage
Symbol
Value
600
30
Unit
V
CASE 221D
V
DSS
Gate−to−Source Voltage
DC
V
GS
V
AC (f > 1 Hz)
30
MARKING DIAGRAM
Continuous Drain Current
T
= 25°C
= 100°C
= 25°C
= 25°C
I
27
A
C
D
T
C
17
Power Dissipation
T
T
P
179
95
W
A
C
D
T100N
Pulsed Drain Current (Note 1)
I
DM
C
60S5H
AYWWZZ
Pulsed Source Current (Body
Diode) (Note 1)
I
95
A
SM
Operating Junction and Storage Temperature T , T
−55 to
+150
°C
J
STG
Range
Source Current (Body Diode)
I
S
27
A
Single Pulse Avalanche
Energy
I = 5.1 A
G
E
230
mJ
T100N60S5H = Specific Device Code
L
AS
R
= 25 W
A
Y
= Assembly Location
= Year
Avalanche Current
I
AS
5.1
1.79
120
20
A
WW
ZZ
= Work Week
= Lot Code
Repetitive Avalanche Energy (Note 1)
MOSFET dv/dt
E
AR
mJ
dv/dt
V/ns
Peak Diode Recovery dv/dt (Note 2)
Lead Temperature for Soldering Purposes
T
260
°C
ORDERING INFORMATION
L
(1/8″ from case for 10 seconds)
Device
Package
Shipping
50 Units / Tube
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
NTPF100N60S5H
TO220
FULLPACK
1. Repetitive rating: pulse−width limited by maximum junction temperature.
2. I ≤ 13.5 A, di/dt ≤ 200 A/s, V ≤ 400 V, starting T = 25°C.
SD
DD
J
© Semiconductor Components Industries, LLC, 2022
1
Publication Order Number:
August, 2022 − Rev. 0
NTPF100N60S5H/D
NTPF100N60S5H
THERMAL CHARACTERISTICS
Parameter
Symbol
Value
3.26
Unit
Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient
R
°C/W
q
JC
R
62.5
q
JA
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
V
I
= 0 V, I = 1 mA, T = 25_C
600
−
−
−
V
(BR)DSS
GS
D
J
Drain−to−Source Breakdown Voltage
Temperature Coefficient
DV
/
= 10 mA, Referenced to 25_C
−
630
mV/_C
(BR)DSS
D
DT
J
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
ON CHARACTERISTICS
I
V
GS
= 0 V, V = 600 V, T = 25_C
−
−
−
−
1
mA
DSS
GSS
DS
J
I
V
=
30 V, V = 0 V
100
nA
GS
DS
Drain−to−Source On Resistance
Gate Threshold Voltage
R
V
V
= 10 V, I = 13.5 A, T = 25_C
−
2.7
−
80
−
100
4.3
−
mW
V
DS(on)
GS
D
J
V
= V , I = 2.7 mA, T = 25_C
GS(th)
GS
DS
D
J
Forward Trans−conductance
g
FS
V
DS
= 20 V, I = 13.5 A
27.1
S
D
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
C
V
= 400 V, V = 0 V, f = 250 kHz
−
−
−
2618
38
−
−
−
pF
ISS
DS
GS
Output Capacitance
C
OSS
Time Related Output Capacitance
C
I
= Constant, V = 0 V to 400 V,
608
OSS(tr.)
D
DS
= 0 V
V
GS
Energy Related Output Capacitance
Total Gate Charge
C
V
= 0 V to 400 V, V = 0 V
−
−
−
−
−
64.4
46
−
−
−
−
−
OSS(er.)
DS
GS
Q
V
= 400 V, I = 13.5 A, V = 10 V
nC
G(tot)
DD
D
GS
Gate−to−Source Charge
Gate−to−Drain Charge
Gate Resistance
Q
12.7
11.5
1.16
GS
Q
GD
R
f = 1 MHz
W
G
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Rise Time
t
V
= 0/10 V, V = 400 V,
−
−
−
−
21.5
5.81
61
−
−
−
−
ns
d(on)
GS
D
DD
I
= 13.5 A, R = 4.7 W
G
t
r
Turn-Off Delay Time
Fall Time
t
d(off)
t
f
2.57
SOURCE-TO−DRAIN DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
Reverse Recovery Charge
V
V
GS
= 0 V, I = 13.5 A, T = 25_C
−
−
−
−
1.2
−
V
SD
RR
SD
J
t
V
= 0 V, I = 13.5 A,
362
5359
ns
nC
GS
SD
dI/dt = 100 A/ms, V = 400 V
DD
Q
−
RR
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
SENSEFET is a registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
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2
NTPF100N60S5H
TYPICAL CHARACTERISTICS
60
50
40
30
20
10
0
1000
T
VDS=20V
J=25°C
100
10
V
GS=4V
GS=4.5V
GS=5V
VGS=6V
GS=7V
V
V
T
J=−55°C
V
T
J=25°C
VGS=10V
T
J=150°C
1
0
5
10
15
20
3
4
5
6
7
VDS, Drain to Source Voltage (V)
VGS, Gate to Source Voltage (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
200
150
100
50
1000
100
10
T
VGS=0V
J=25°C
1
=150°C
=25°C
TJ
VGS=10V
GS=20V
TJ
V
=−55°C
TJ
0
0.1
0
10
20
30
40
50
60
0
0.2
0.4
0.6
0.8
1
1.2
ID, Drain Current (A)
VSD, Diode Forward Voltage (V)
Figure 3. On−Resistance Variation vs. Drain
Figure 4. Diode Forward Voltage vs. Source
Current
Current and Gate Voltage
105
104
103
102
101
100
10
8
C
iss=Cgs+Cgd(Cds=shorted)
ID=13.5A
VGS=0V
Coss=Cds+Cgd
Crss=Cgd
T
J=25°C
f=250KHz
6
4
2
10−1
10−2
C
ISS
C
=130V
VDD
=400V
VDD
OSS
C
RSS
0
0
100
200
300
400
500
600
0
5
10
15
20
25
30
35
40
45
50
VDS, Drain to Source Voltage (V)
QG, Gate Charge (nC)
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
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3
NTPF100N60S5H
TYPICAL CHARACTERISTICS
1.2
1.15
1.1
3
VGS=0V
ID=10mA
ID=13.5A
VGS=10V
2.5
2
1.5
1
1.05
1
0.95
0.9
0.5
0
0.85
0.8
−75 −50 −25
0
25 50 75 100 125 150 175
−75 −50 −25
0
25 50 75 100 125 150 175
T
T
J, Junction Temperature (°C)
J, Junction Temperature (°C)
Figure 8. On−Resistance Variation vs.
Figure 7. Breakdown Voltage Variation vs.
Temperature
Temperature
14
12
10
8
102
101
TC=25°C
Single Pulse
T
J=150°C
Limited by RDS(ON)
6
100
4
pulseDuration=10u
pulseDuration=100u
pulseDuration=1m
pulseDuration=10m
pulseDuration=DC
2
10−1
0
0.1
1
10
100
1000
25
50
75
100
125
150
VDS, Drain to Source Voltage (V)
T
C, Case Temperature (°C)
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current vs. Case
Temperature
9
8
7
6
5
4
3
2
1
0
EOSS
0
100
200
300
400
500
600
VDS, Drain to Source Voltage (V)
Figure 11. Eoss vs. Drain−to−Source Voltage
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4
NTPF100N60S5H
TYPICAL CHARACTERISTICS
10
1
D=0 is Single Pulse
0.1
D=0.00
D=0.01
D=0.02
D=0.05
D=0.10
D=0.20
D=0.50
0.01
Notes:
ZθJC (t)=3.3°C/W Max
PPDM
T
=PDM xZθJC (t)+TC
JM
t1
Duty Cycle,D=t1/t2
t2
0.001
10−5
10−4
10−3
t,Rectangular Pulse Duration(s)
10−2
10−1
100
Figure 12. Transient Thermal Impedance
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5
NTPF100N60S5H
PACKAGE DIMENSIONS
TO−220 FULLPAK
CASE 221D−03
ISSUE K
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
SEATING
−T−
PLANE
−B−
C
2. CONTROLLING DIMENSION: INCH
3. 221D-01 THRU 221D-02 OBSOLETE, NEW
STANDARD 221D-03.
F
S
Q
H
INCHES
DIM MIN MAX
MILLIMETERS
U
MIN
15.67
9.96
4.50
0.60
2.95
MAX
16.12
10.63
4.90
A
B
C
D
F
0.617
0.392
0.177
0.024
0.116
0.635
0.419
0.193
0.039
0.129
A
1
2 3
1.00
3.28
G
H
J
0.100 BSC
2.54 BSC
−Y−
K
0.118
0.018
0.503
0.048
0.135
0.025
0.541
0.058
3.00
0.45
3.43
0.63
K
L
12.78
1.23
13.73
1.47
G
N
J
N
Q
R
S
U
0.200 BSC
5.08 BSC
R
0.122
0.099
0.092
0.239
0.138
0.117
0.113
0.271
3.10
2.51
2.34
6.06
3.50
2.96
2.87
6.88
L
D 3 PL
M
M
0.25 (0.010)
B
Y
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