NTR4501NT1 [ONSEMI]

Power MOSFET 20 V, 3.2 A, Single N−Channel, SOT−23; 功率MOSFET的20 V ， 3.2 A单N沟道， SOT -23


型号：	NTR4501NT1
厂家：	ONSEMI
描述：	Power MOSFET 20 V, 3.2 A, Single N−Channel, SOT−23 功率MOSFET的20 V ， 3.2 A单N沟道， SOT -23 晶体晶体管功率场效应晶体管开关脉冲光电二极管
文件：	总6页 (文件大小：60K)
中文：	中文翻译
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NTR4501N

Power MOSFET

20 V, 3.2 A, Single N−Channel, SOT−23

Features

• Leading Planar Technology for Low Gate Charge / Fast Switching

• 2.5 V Rated for Low Voltage Gate Drive

• SOT−23 Surface Mount for Small Footprint

• Pb−Free Package is Available

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TYP

I MAX

(Note 1)

(BR)DSS

DS(on)

Applications

70 mW @ 4.5 V

85 mW @ 2.5 V

3.6 A

20 V

• Load/Power Switch for Portables

• Load/Power Switch for Computing

• DC−DC Conversion

3.1 A

N−Channel

MAXIMUM RATINGS (T = 25°C unless otherwise stated)

Parameter

Drain−to−Source Voltage

Symbol Value Unit

±12

3.2

DSS

Gate−to−Source Voltage

Continuous Drain

Current (Note 1)

Steady T = 25°C

State

T = 85°C

2.4

Steady State Power

Dissipation (Note 1)

Steady State

1.25

MARKING DIAGRAM/

PIN ASSIGNMENT

Pulsed Drain Current

t = 10 ms

10.0

Operating Junction and Storage Temperature

T ,

stg

−55 to

150

°C

Drain

Continuous Source Current (Body Diode)

1.6

SOT−23

CASE 318

STYLE 21

TR1

Lead Temperature for Soldering Purposes

(1/8” from case for 10 s)

260

°C

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

Gate

Source

TR1 = Specific Device Code

= Date Code

THERMAL RESISTANCE RATINGS

Parameter

Junction−to−Ambient (Note 1)

Junction−to−Ambient (Note 2)

Symbol

Max

100

300

Unit

ORDERING INFORMATION

°C/W

Device

Package

Shipping†

NTR4501NT1

SOT−23

3000 / Tape & Reel

1. Surface−mounted on FR4 board using 1 in sq pad size

(Cu area = 1.127 in sq [1 oz] including traces).

NTR4501NT1G

SOT−23

2. Surface−mounted on FR4 board using the minimum recommended pad size.

(Pb−Free)

NTR4501NT3

SOT−23

10000 / Tape & Reel

NTR4501NT3G

SOT−23

(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

Semiconductor Components Industries, LLC, 2005

Publication Order Number:

March, 2005 − Rev. 4

NTR4501N/D

NTR4501N

Electrical Characteristics (T = 25°C unless otherwise specified)

Parameter

Symbol

Test Condition

Min

Typ

Max

Units

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage (Note 3)

= 0 V, I = 250 mA

24.5

(BR)DSS

Drain−to−Source Breakdown Voltage

Temperature Coefficient

mV/°C

(BR)DSS

Zero Gate Voltage Drain Current

= 0 V

T = 25°C

1.5

DSS

= 16 V

T = 85°C

Gate−to−Source Leakage Current

ON CHARACTERISTICS

= 0 V, V = ±12 V

±100

GSS

Gate Threshold Voltage (Note 3)

= V , I = 250 mA

0.65

1.2

GS(TH)

Negative Threshold Temperature

Coefficient

−2.3

mV/°C

GS(TH)

Drain−to−Source On Resistance

= 4.5 V, I = 3.6 A

DS(on)

= 2.5 V, I = 3.1 A

105

Forward Transconductance

CHARGES AND CAPACITANCES

Input Capacitance

= 5.0 V, I = 3.6 A

200

iss

= 0 V, f = 1.0 MHz,

Output Capacitance

oss

= 10 V

Reverse Transfer Capacitance

Total Gate Charge

rss

2.4

0.5

0.6

6.0

G(TOT)

= 4.5 V, V = 10 V,

Gate−to−Source Gate Charge

Gate−to−Drain Charge

SWITCHING CHARACTERISTICS (Note 4)

Turn−On Delay Time

= 3.6 A

6.5

d(on)

Rise Time

= 4.5 V, V = 10 V,

= 3.6 A, R = 6.0 W

Turn−Off Delay Time

d(off)

Fall Time

SOURCE−DRAIN DIODE CHARACTERISTICS

Forward Diode Voltage

Reverse Recovery Time

Charge Time

= 0 V, I = 1.6 A

0.8

7.1

1.2

= 0 V,

d /d = 100 A/ms,

Discharge Time

1.9

3.0

= 1.6 A

Reverse Recovery Charge

3. Pulse Test: Pulse width v 300 ms, duty cycle v 2%.

4. Switching characteristics are independent of operating junction temperatures.

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NTR4501N

7.0

6.0

5.0

4.0

3.0

2.0

1.0

7.0

6.0

5.0

4.0

3.0

2.0

1.0

≥ 10 V

= 2.0 V

= 1.8 V

T = 25°C

= 10 V

= 2.2 V

= 3.0 V

= 1.6 V

T = 25°C

T = 55°C

= 1.4 V

= 1.2 V

T = 100°C

1.0

1.5

2.0

2.5

3.0

3.5

, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

, GATE−TO−SOURCE VOLTAGE (VOLTS)

Figure 1. On−Region Characteristics

Figure 2. Transfer Characteristics

0.10

0.09

0.08

0.25

0.20

0.15

0.10

0.05

T = 25°C

= 2.5 V

= 3.2 A

T = 25°C

= 4.5 V

0.07

0.06

0.05

1.0

2.0

3.0

4.0

5.0

6.0

0.125 0.25

0.375

0.5

0.625 0.75

0.875 1.0

I , DRAIN CURRENT (AMPS)

Figure 3. On−Resistance versus

Gate−to−Source Voltage

Figure 4. On−Resistance versus Drain

Current and Gate Voltage

1.4

1000

100

= 0 V

1.2

1.0

0.8

0.6

T = 150°C

= 3.2 A

= 4.5 V

T = 100°C

1.0

−50

−25

100

125 150

T , JUNCTION TEMPERATURE (°C)

, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

Figure 5. On−Resistance Variation with

Temperature

Figure 6. Drain−to−Source Leakage

Current versus Voltage

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NTR4501N

5.0

350

300

250

200

150

100

= 0 V

T = 25°C

4.0

3.0

2.0

iss

oss

1.0

T = 25°C

rss

= 3.2 A

0.5

1.0

1.5

2.0

2.5

3.0

DRAIN−TO−SOURCE VOLTAGE (VOLTS)

Q , TOTAL GATE CHARGE (nC)

Figure 7. Capacitance Variation

Figure 8. Gate−to−Source and

Drain−to−Source Voltage versus Total

Charge

100

= 10 V

= 3.2 A

= 4.5 V

= 0 V

T = 25°C

d(off)

d(on)

R , GATE RESISTANCE (W)

100

0.3

0.6

, SOURCE−TO−DRAIN VOLTAGE (VOLTS)

0.9

1.2

Figure 9. Resistive Switching Time Variation

versus Gate Resistance

Figure 10. Diode Forward Voltage versus

Current

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NTR4501N

PACKAGE DIMENSIONS

SOT−23

(TO−236)

CASE 318−08

ISSUE AK

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. MAXIMUM LEAD THICKNESS INCLUDES LEAD

FINISH THICKNESS. MINIMUM LEAD

THICKNESS IS THE MINIMUM THICKNESS OF

BASE MATERIAL.

4. 318−01 THRU −07 AND −09 OBSOLETE, NEW

STANDARD 318−08.

INCHES

MIN

MILLIMETERS

DIM

MAX

0.1197

0.0551

0.0440

0.0200

0.0807

0.0040

0.0070

0.0285

0.0401

0.1039

0.0236

MIN

2.80

1.20

0.89

0.37

1.78

0.013

0.085

0.35

0.89

2.10

0.45

MAX

3.04

1.40

1.11

0.1102

0.0472

0.0350

0.0150

0.0701

0.0005

0.0034

0.0140

0.0350

0.0830

0.0177

0.50

2.04

0.100

0.177

0.69

1.02

2.64

0.60

STYLE 21:

PIN 1. GATE

2. SOURCE

3. DRAIN

SOLDERING FOOTPRINT*

0.95

0.037

0.95

0.037

2.0

0.079

0.9

0.035

0.8

0.031

inches

SCALE 10:1

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

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NTR4501N

ON Semiconductor and

are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice

to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All

operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights

nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications

intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should

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and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death

associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal

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NTR4501N/D

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