NTS10120EMFST1G [ONSEMI]
Very Low Leakage Trench-based Schottky Rectifier;
| 型号： | NTS10120EMFST1G |
| 厂家： | 
ONSEMI |
| 描述： | Very Low Leakage Trench-based Schottky Rectifier |
| 文件： | 总5页 (文件大小：69K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NTS10120EMFS,
NRVTS10120EMFS
Very Low Leakage
Trench-based Schottky
Rectifier
http://onsemi.com
Features
• Fine Lithography Trench−based Schottky Technology for Very Low
Forward Voltage and Low Leakage
TRENCH SCHOTTKY
RECTIFIERS
• Fast Switching with Exceptional Temperature Stability
10 AMPERES
120 VOLTS
• Low Power Loss and Lower Operating Temperature
• Higher Efficiency for Achieving Regulatory Compliance
• Low Thermal Resistance
5,6
1,2,3
• High Surge Capability
• NRV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
MARKING
DIAGRAM
• These are Pb−Free and Halide−Free Devices
A
C
C
1
A
A
TE1012
AYWWZZ
Typical Applications
SO−8 FLAT LEAD
CASE 488AA
STYLE 2
• Switching Power Supplies including Notebook / Netbook Adapters,
ATX and Flat Panel Display
Not Used
• High Frequency and DC−DC Converters
• Freewheeling and OR−ing Diodes
TE1012 = Specific Device Code
A
Y
= Assembly Location
= Year
• Reverse Battery Protection
• LED Lighting
W
ZZ
= Work Week
= Lot Traceability
• Instrumentation
Mechanical Characteristics:
ORDERING INFORMATION
• Case: Epoxy, Molded
Device
Package
Shipping†
1500 /
• Epoxy Meets Flammability Rating UL 94−0 @ 0.125 in.
• Lead Finish: 100% Matte Sn (Tin)
NTS10120EMFST1G
SO−8 FL
(Pb−Free) Tape & Reel
• Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
NTS10120EMFST3G
SO−8 FL 5000 /
(Pb−Free) Tape & Reel
NRVTS10120EMFST1G SO−8 FL 1500 /
• Device Meets MSL 1 Requirements
(Pb−Free) Tape & Reel
NRVTS10120EMFST3G SO−8 FL
5000 /
(Pb−Free) Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2014
1
Publication Order Number:
June, 2014 − Rev. 0
NTS10120EMFS/D
NTS10120EMFS, NRVTS10120EMFS
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
V
RRM
V
RWM
V
120
10
R
Average Rectified Forward Current
I
A
A
A
F(AV)
(Rated V , T = 165°C)
R
C
Peak Repetitive Forward Current,
I
20
FRM
(Rated V , Square Wave, 20 kHz, T = 163°C)
R
C
Non−Repetitive Peak Surge Current
I
200
FSM
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
Storage Temperature Range
T
−65 to +175
−55 to +175
100
°C
°C
mJ
stg
Operating Junction Temperature
T
J
Unclamped Inductive Switching Energy (10 mH Inductor, Non−repetitive)
ESD Rating (Human Body Model)
E
AS
3B
ESD Rating (Machine Model)
M4
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Typ
Max
Unit
Thermal Resistance, Junction−to−Case, Steady State
(Assumes 600 mm 1 oz. copper bond pad, on a FR4 board)
R
1.8
−
°C/W
θ
JC
2
ELECTRICAL CHARACTERISTICS
Rating
Symbol
Typ
Max
Unit
Instantaneous Forward Voltage (Note 1)
V
F
V
(I = 5 A, T = 25°C)
0.6
0.735
−
0.82
F
J
(I = 10 A, T = 25°C)
F
J
(I = 5 A, T = 125°C)
0.515
0.588
−
0.63
F
J
(I = 10 A, T = 125°C)
F
J
Instantaneous Reverse Current (Note 1)
I
R
(V = 90 V, T = 25°C)
1.0
3.75
−
30
mA
mA
R
J
(Rated dc Voltage, T = 25°C)
J
(V = 90 V, T = 125°C)
2.0
3.1
−
20
mA
mA
R
J
(Rated dc Voltage, T = 125°C)
J
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
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2
NTS10120EMFS, NRVTS10120EMFS
TYPICAL CHARACTERISTICS
100
10
100
T = 125°C
A
T = 125°C
A
T = 150°C
10
A
T = 150°C
A
T = 175°C
A
T = 175°C
A
1
1
T = 25°C
A
T = 25°C
A
T = −55°C
A
T = −55°C
A
0.1
0.1
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3
V , INSTANTANEOUS FORWARD VOLTAGE (V)
F
V , INSTANTANEOUS FORWARD VOLTAGE (V)
F
Figure 1. Typical Instantaneous Forward
Characteristics
Figure 2. Maximum Instantaneous Forward
Characteristics
1.E+00
1.E−01
1.E−02
1.E−03
1.E−04
1.E−05
1.E+00
1.E−01
1.E−02
1.E−03
1.E−04
1.E−05
T = 175°C
A
T = 150°C
A
T = 175°C
A
T = 125°C
A
T = 150°C
A
T = 125°C
A
T = 25°C
A
T = 25°C
A
1.E−06
1.E−07
1.E−06
1.E−07
0
10 20 30 40 50 60 70 80 90 100 110 120
0
10 20 30 40 50 60 70 80 90 100 110 120
V , INSTANTANEOUS REVERSE VOLTAGE (V)
R
V , INSTANTANEOUS REVERSE VOLTAGE (V)
R
Figure 3. Typical Reverse Characteristics
Figure 4. Maximum Reverse Characteristics
10,000
1000
25
20
15
10
T = 25°C
J
R
= 1.8°C/W
q
JC
DC
Square Wave
100
10
5
0
0.1
1
10
100
110
120
130
140
150
160
170
V , REVERSE VOLTAGE (V)
R
T , CASE TEMPERATURE (°C)
C
Figure 5. Typical Junction Capacitance
Figure 6. Current Derating
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3
NTS10120EMFS, NRVTS10120EMFS
TYPICAL CHARACTERISTICS
30
28
26
24
22
20
18
16
14
12
10
8
I /I = 10
PK AV
I /I = 20
PK AV
T = 175°C
J
I
/I = 5
PK AV
Square Wave
DC
6
4
2
0
0
2
4
6
8
10
12
14
I , AVERAGE FORWARD CURRENT (A)
F(AV)
Figure 7. Forward Power Dissipation
100
10
1
50% Duty Cycle
20%
10%
5%
2%
1%
Assumes 25°C ambient and soldered to
2
a 600 mm − oz copper pad on PCB
0.1
Single Pulse
0.01
0.000001 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (sec)
Figure 8. Typical Thermal Characteristics
10
1
50% Duty Cycle
20%
10%
5%
0.1
2%
1%
Single Pulse
0.01
0.000001 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (sec)
Figure 9. Typical Transient Thermal Response Characteristics, Junction−to−Case
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4
NTS10120EMFS, NRVTS10120EMFS
PACKAGE DIMENSIONS
DFN5 5x6, 1.27P
(SO−8FL)
CASE 488AA
ISSUE H
2 X
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
BURRS.
0.20
C
D
A
2
B
E
2 X
D1
MILLIMETERS
0.20
C
DIM
A
A1
b
c
D
D1
D2
E
E1
E2
e
G
K
L
L1
M
MIN
0.90
0.00
0.33
0.23
NOM
1.00
−−−
0.41
0.28
MAX
1.10
0.05
0.51
0.33
4 X
q
E1
2
5.15 BSC
4.90
4.00
4.70
3.80
5.10
4.20
c
A1
6.15 BSC
5.90
3.65
5.70
3.45
6.10
3.85
1
2
3
4
1.27 BSC
0.61
1.35
0.61
0.17
0.51
1.20
0.51
0.05
3.00
0
0.71
1.50
0.71
0.20
3.80
TOP VIEW
C
3 X
e
SEATING
PLANE
0.10
0.10
C
C
3.40
−−−
DETAIL A
q
12
A
_
_
STYLE 2:
PIN 1. ANODE
2. ANODE
SIDE VIEW
SOLDERING FOOTPRINT*
3. ANODE
4. NO CONNECT
5. CATHODE
DETAIL A
3X
4X
1.270
0.750
b
8X
4X
1.000
0.10
0.05
C
c
A
B
e/2
L
1
4
0.965
K
0.29X05
0.475
1.330
2X
0.495
E2
PIN 5
(EXPOSED PAD)
4.530
M
L1
3.200
D2
BOTTOM VIEW
G
2X
1.530
4.560
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC
reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
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limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC
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NTS10120EMFS/D
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