NTS12120MFS [ONSEMI]
Very Low Forward Voltage Trench-based Schottky Rectifier;
| 型号： | NTS12120MFS |
| 厂家： | 
ONSEMI |
| 描述： | Very Low Forward Voltage Trench-based Schottky Rectifier |
| 文件： | 总5页 (文件大小：110K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NTS12120MFS,
NRVTS12120MFS
Very Low Forward Voltage
Trench-based Schottky
Rectifier
http://onsemi.com
Features
• Fine Lithography Trench−based Schottky Technology for Very Low
Forward Voltage and Low Leakage
TRENCH SCHOTTKY
RECTIFIERS
• Fast Switching with Exceptional Temperature Stability
• Low Power Loss and Lower Operating Temperature
12 AMPERES
120 VOLTS
• Higher Efficiency for Achieving Regulatory Compliance
• Low Thermal Resistance
5,6
1,2,3
• High Surge Capability
• NRV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
MARKING
DIAGRAM
• These are Pb−Free and Halide−Free Devices
A
C
C
1
A
A
TH1212
AYWWZZ
Typical Applications
• Switching Power Supplies including Notebook / Netbook Adapters,
ATX and Flat Panel Display
SO−8 FLAT LEAD
CASE 488AA
STYLE 2
Not Used
• High Frequency and DC−DC Converters
TH1212 = Specific Device Code
A
Y
= Assembly Location
= Year
• Freewheeling and OR−ing diodes
• Reverse Battery Protection
• LED Lighting
W
ZZ
= Work Week
= Lot Traceability
• Instrumentation
Mechanical Characteristics:
ORDERING INFORMATION
• Case: Epoxy, Molded
• Epoxy Meets Flammability Rating UL 94−0 @ 0.125 in.
• Lead Finish: 100% Matte Sn (Tin)
Device
Package
Shipping†
NTS12120MFST1G
SO−8 FL
1500 /
• Lead and Mounting Surface Temperature for Soldering Purposes:
(Pb−Free)
Tape & Reel
260°C Max. for 10 Seconds
NTS12120MFST3G
SO−8 FL
5000 /
• Device Meets MSL 1 Requirements
(Pb−Free)
Tape & Reel
NRVTS12120MFST1G SO−8 FL
(Pb−Free)
1500 /
Tape & Reel
NRVTS12120MFST3G SO−8 FL
(Pb−Free)
5000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2014
1
Publication Order Number:
March, 2014 − Rev. 1
NTS12120MFS/D
NTS12120MFS, NRVTS12120MFS
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
V
V
V
RRM
RWM
120
12
R
Average Rectified Forward Current
I
A
A
A
F(AV)
(Rated V , T = 138°C)
R
C
Peak Repetitive Forward Current,
I
24
FRM
(Rated V , Square Wave, 20 kHz, T = 136°C)
R
C
Non−Repetitive Peak Surge Current
I
200
FSM
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
Storage Temperature Range
T
−65 to +150
−55 to +150
100
°C
°C
mJ
stg
Operating Junction Temperature
T
J
Unclamped Inductive Switching Energy (10 mH Inductor, Non−repetitive)
ESD Rating (Human Body Model)
E
AS
3B
ESD Rating (Machine Model)
M4
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Typ
Max
Unit
Thermal Resistance, Junction−to−Case, Steady State
(Assumes 600 mm 1 oz. copper bond pad, on a FR4 board)
R
2.0
−
°C/W
θ
JC
2
ELECTRICAL CHARACTERISTICS
Rating
Symbol
Typ
Max
Unit
Instantaneous Forward Voltage (Note 1)
V
F
V
(I = 6 A, T = 25°C)
0.587
0.63
−
0.83
F
J
(I = 12 A, T = 25°C)
F
J
(I = 6 A, T = 125°C)
0.510
0.587
−
0.68
F
J
(I = 12 A, T = 125°C)
F
J
Instantaneous Reverse Current (Note 1)
(V = 90 V, T = 25°C)
I
R
3.4
14.5
−
75
mA
mA
R
J
(Rated dc Voltage, T = 25°C)
J
(V = 90 V, T = 125°C)
3.5
9.2
−
40
mA
mA
R
J
(Rated dc Voltage, T = 125°C)
J
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
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2
NTS12120MFS, NRVTS12120MFS
TYPICAL CHARACTERISTICS
100
10
100
T = 125°C
A
T = 125°C
A
10
T = 150°C
A
T = 150°C
A
1
1
T = 25°C
A
T = 25°C
A
T = −55°C
A
T = −55°C
A
0.1
0.1
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
V , INSTANTANEOUS FORWARD VOLTAGE (V)
F
V , INSTANTANEOUS FORWARD VOLTAGE (V)
F
Figure 1. Typical Instantaneous Forward
Characteristics
Figure 2. Maximum Instantaneous Forward
Characteristics
1.E+00
1.E−01
1.E−02
1.E−03
1.E−04
1.E+00
1.E−01
1.E−02
1.E−03
T = 150°C
A
T = 150°C
A
T = 125°C
A
T = 125°C
A
1.E−04
1.E−05
1.E−05
1.E−06
T = 25°C
T = 25°C
A
A
0
10 20 30 40 50 60 70 80 90 100 110 120
0
10 20 30 40 50 60 70 80 90 100 110 120
V , INSTANTANEOUS REVERSE VOLTAGE (V)
R
V , INSTANTANEOUS REVERSE VOLTAGE (V)
R
Figure 3. Typical Reverse Characteristics
Figure 4. Maximum Reverse Characteristics
10,000
1000
25
20
15
10
R
= 2.0 °C/W
q
JC
T = 25°C
J
DC
Square Wave
100
10
5
0
0.1
1
10
100
80
90
100
110
120
130
140 150
V , REVERSE VOLTAGE (V)
R
T , CASE TEMPERATURE (°C)
C
Figure 5. Typical Junction Capacitance
Figure 6. Current Derating
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3
NTS12120MFS, NRVTS12120MFS
TYPICAL CHARACTERISTICS
20
18
16
14
12
10
I /I = 20
PK AV
I /I = 10
PK AV
T = 150°C
J
I
/I = 5
PK AV
8
6
4
Square Wave
DC
2
0
0
1
2
3
4
5
6
7
8
9
I , AVERAGE FORWARD CURRENT (A)
F(AV)
Figure 7. Forward Power Dissipation
100
10
1
50% Duty Cycle
20%
10%
5%
2%
1%
Assumes 25°C ambient and soldered to
a 600 mm − oz copper pad on PCB
2
0.1
Single Pulse
0.01
0.000001 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (sec)
Figure 8. Thermal Characteristics
10
1
50% Duty Cycle
20%
10%
5%
0.1
2%
1%
Single Pulse
0.01
0.000001 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (sec)
Figure 9. Typical Transient Thermal Response Characteristics, Junction−to−Case
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4
NTS12120MFS, NRVTS12120MFS
PACKAGE DIMENSIONS
DFN5 5x6, 1.27P
(SO−8FL)
CASE 488AA
2 X
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
0.20
C
ISSUE H
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
BURRS.
D
A
2
B
E
2 X
D1
MILLIMETERS
0.20
C
DIM
A
A1
b
c
MIN
0.90
0.00
0.33
0.23
NOM
1.00
−−−
0.41
0.28
5.15 BSC
4.90
4.00
MAX
1.10
0.05
0.51
0.33
4 X
q
E1
2
D
D1
D2
E
E1
E2
e
G
K
L
L1
M
4.70
3.80
5.10
4.20
c
A1
6.15 BSC
5.90
3.65
5.70
3.45
6.10
3.85
1
2
3
4
1.27 BSC
0.61
1.35
0.61
0.17
3.40
−−−
0.51
1.20
0.51
0.05
3.00
0
0.71
1.50
0.71
0.20
3.80
TOP VIEW
C
3 X
e
SEATING
PLANE
0.10
0.10
C
C
DETAIL A
q
12
A
_
_
STYLE 2:
PIN 1. ANODE
2. ANODE
SIDE VIEW
SOLDERING FOOTPRINT*
3. ANODE
DETAIL A
4. NO CONNECT
5. CATHODE
3X
4X
1.270
0.750
b
8X
4X
1.000
0.10
0.05
C
c
A
B
e/2
L
1
4
0.965
K
0.29X05
0.475
1.330
2X
0.495
E2
PIN 5
(EXPOSED PAD)
4.530
M
L1
3.200
D2
BOTTOM VIEW
G
2X
1.530
4.560
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC
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NTS12120MFS/D
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