NTS8100MFS [ONSEMI]
Very Low Forward Voltage Trench-based Schottky Rectifier;
| 型号： | NTS8100MFS |
| 厂家： | 
ONSEMI |
| 描述： | Very Low Forward Voltage Trench-based Schottky Rectifier |
| 文件： | 总5页 (文件大小：64K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NTS8100MFS,
NRVTS8100MFS
Very Low Forward Voltage
Trench-based Schottky
Rectifier
http://onsemi.com
Features
• Fine Lithography Trench−based Schottky Technology for Very Low
Forward Voltage and Low Leakage
SCHOTTKY BARRIER
RECTIFIERS
• Fast Switching with Exceptional Temperature Stability
8 AMPERES
100 VOLTS
• Low Power Loss and Lower Operating Temperature
• Higher Efficiency for Achieving Regulatory Compliance
• Low Thermal Resistance
5,6
1,2,3
• High Surge Capability
• NRV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
MARKING
DIAGRAM
• These are Pb−Free and Halide−Free Devices
A
C
C
1
TS8100
AYWWZZ
A
A
Typical Applications
SO−8 FLAT LEAD
CASE 488AA
STYLE 2
• Switching Power Supplies including Notebook / Netbook Adapters,
ATX and Flat Panel Display
Not Used
• High Frequency and DC−DC Converters
• Freewheeling and OR−ing diodes
• Reverse Battery Protection
• Instrumentation
TS8100 = Specific Device Code
A
Y
= Assembly Location
= Year
W
ZZ
= Work Week
= Lot Traceability
Mechanical Characteristics:
• Case: Epoxy, Molded
ORDERING INFORMATION
• Epoxy Meets Flammability Rating UL 94−0 @ 0.125 in.
• Lead Finish: 100% Matte Sn (Tin)
• Lead and Mounting SurfaceTemperature for Soldering Purposes:
260°C Max. for 10 Seconds
Device
Package
Shipping†
NTS8100MFST1G
NTS8100MFST3G
NRVTS8100MFST1G
NRVTS8100MFST3G
SO−8 FL
(Pb−Free)
1500 /
Tape & Reel
SO−8 FL
(Pb−Free)
5000 /
Tape & Reel
• Device Meets MSL 1 Requirements
SO−8 FL
(Pb−Free)
1500 /
Tape & Reel
SO−8 FL
5000 /
(Pb−Free)
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2014
1
Publication Order Number:
November, 2014 − Rev. 1
NTS8100MFS/D
NTS8100MFS, NRVTS8100MFS
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
V
RRM
V
RWM
V
100
8
R
Average Rectified Forward Current
I
A
A
A
F(AV)
(Rated V , T = 130°C)
R
C
Peak Repetitive Forward Current,
I
16
FRM
(Rated V , Square Wave, 20 kHz, T = 135°C)
R
C
Non−Repetitive Peak Surge Current
I
150
FSM
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
Storage Temperature Range
T
−65 to +150
−55 to +150
100
°C
°C
mJ
stg
Operating Junction Temperature
T
J
Unclamped Inductive Switching Energy (10 mH Inductor, Non−repetitive)
ESD Rating (Human Body Model)
E
AS
3B
ESD Rating (Machine Model)
M4
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Typ
Max
Unit
Thermal Resistance, Junction−to−Case, Steady State
(Assumes 600 mm 1 oz. copper bond pad, on a FR4 board)
R
−
2.0
°C/W
θ
JC
2
ELECTRICAL CHARACTERISTICS
Instantaneous Forward Voltage (Note 1)
v
V
F
(i = 8 Amps, T = 125°C)
0.58
0.64
0.62
0.73
F
J
(i = 8 Amps, T = 25°C)
F
J
Instantaneous Reverse Current (Note 1)
i
R
mA
(Rated dc Voltage, T = 125°C)
7
20
0.07
J
(Rated dc Voltage, T = 25°C)
0.015
J
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
http://onsemi.com
2
NTS8100MFS, NRVTS8100MFS
TYPICAL CHARACTERISTICS
100
10
100
10
T = 125°C
A
T = 125°C
A
1
1
T = 150°C
A
T = 150°C
A
T = 25°C
A
T = 25°C
A
0.1
0.1
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
0.9
0
0
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
V , INSTANTANEOUS FORWARD VOLTAGE (V)
F
V , INSTANTANEOUS FORWARD VOLTAGE (V)
F
Figure 1. Typical Instantaneous Forward
Characteristics
Figure 2. Maximum Instantaneous Forward
Characteristics
1.E+00
1.E−01
1.E−02
1.E−03
1.E−04
1.E+00
1.E−01
1.E−02
1.E−03
1.E−04
T = 150°C
A
T = 150°C
A
T = 125°C
A
T = 125°C
A
1.E−05
1.E−06
1.E−05
1.E−06
T = 25°C
A
T = 25°C
A
0
10
20 30 40 50 60 70 80 90 100
10 20 30 40 50 60 70 80 90 100
V , INSTANTANEOUS REVERSE VOLTAGE (V)
R
V , INSTANTANEOUS REVERSE VOLTAGE (V)
R
Figure 3. Typical Reverse Characteristics
Figure 4. Maximum Reverse Characteristics
1,000
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
R
= 2.0 °C/W
T = 25°C
J
q
JC
DC
Square Wave
100
10
1
10
100
10
30
50
70
90
110
130 150
V , REVERSE VOLTAGE (V)
R
T , CASE TEMPERATURE (°C)
C
Figure 5. Typical Junction Capacitance
Figure 6. Current Derating
http://onsemi.com
3
NTS8100MFS, NRVTS8100MFS
TYPICAL CHARACTERISTICS
12
11
10
9
I /I = 20
PK AV
I /I = 10
PK AV
T = 150°C
J
8
I /I = 5
PK AV
7
6
Square Wave
DC
5
4
3
2
1
0
0
1
2
3
4
5
6
7
8
I , AVERAGE FORWARD CURRENT (A)
F(AV)
Figure 7. Forward Power Dissipation
100
10
1
50% Duty Cycle
20%
10%
5%
2%
1%
Assumes 25°C ambient and soldered to
2
a 600 mm − oz copper pad on PCB
Single Pulse
0.1
0.01
0.000001 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (sec)
Figure 8. Thermal Characteristics
http://onsemi.com
4
NTS8100MFS, NRVTS8100MFS
PACKAGE DIMENSIONS
DFN5 5x6, 1.27P
(SO−8FL)
CASE 488AA
ISSUE L
2 X
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
0.20
C
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
BURRS.
D
A
2
B
E
2 X
D1
MILLIMETERS
0.20
C
DIM
A
A1
b
c
D
D1
D2
E
E1
E2
e
MIN
0.90
0.00
0.33
0.23
5.00
4.70
3.80
6.00
5.70
3.45
NOM
1.00
−−−
0.41
0.28
5.15
4.90
4.00
6.15
5.90
3.65
1.27 BSC
0.61
1.35
MAX
1.10
0.05
0.51
0.33
5.30
5.10
4.20
6.30
6.10
3.85
4 X
q
E1
2
c
A1
1
2
3
4
G
K
L
0.51
1.20
0.51
0.71
1.50
0.71
TOP VIEW
C
3 X
e
0.61
SEATING
L1
M
0.125 REF
3.40
−−−
PLANE
0.10
0.10
C
C
3.00
0
3.80
DETAIL A
q
12
A
_
_
RECOMMENDED
SOLDERING FOOTPRINT*
STYLE 2:
PIN 1. ANODE
2. ANODE
SIDE VIEW
2X
0.495
DETAIL A
3. ANODE
4. NO CONNECT
5. CATHODE
4.560
2X
b
8X
1.530
0.10
0.05
C
c
A
B
e/2
L
1
4
3.200
1.330
4.530
K
E2
0.29X05
0.965
PIN 5
(EXPOSED PAD)
M
L1
1
4X
1.000
0.750
D2
BOTTOM VIEW
G
1.270
PITCH
4X
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC
reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without
limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC
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NTS8100MFS/D
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