NTSV30H100CT [ONSEMI]
Very Low Forward Voltage Trench-based Schottky Rectifier;型号: | NTSV30H100CT |
厂家: | ONSEMI |
描述: | Very Low Forward Voltage Trench-based Schottky Rectifier |
文件: | 总5页 (文件大小:108K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
NTSV30H100CT
Very Low Forward Voltage
Trench-based Schottky
Rectifier
Exceptionally Low VF = 0.471 V at IF = 5 A
www.onsemi.com
Features
PIN CONNECTIONS
• Fine Lithography Trench−based Schottky Technology for Very Low
Forward Voltage and Low Leakage
1
3
2, 4
• Fast Switching with Exceptional Temperature Stability
• Low Power Loss and Lower Operating Temperature
4
• Higher Efficiency for Achieving Regulatory Compliance
• Low Thermal Resistance
• High Surge Capability
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
TO−220AB
CASE 221A
STYLE 6
Typical Applications
• Switching Power Supplies including Notebook / Netbook Adapters,
ATX and Flat Panel Display
1
2
3
• High Frequency and DC−DC Converters
• Freewheeling and OR−ing diodes
• Reverse Battery Protection
• Instrumentation
MARKING DIAGRAM
Mechanical Characteristics
• Case: Epoxy, Molded
• Epoxy Meets Flammability Rating UL 94−0 @ 0.125 in
• Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
AY WW
TSV30H10G
AKA
• Lead Temperature for Soldering Purposes: 260°C Maximum for
10 sec
A
Y
= Assembly Location
= Year
WW
AKA
G
= Work Week
= Polarity Designator
= Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2014
1
Publication Order Number:
November, 2014 − Rev. 1
NTSV30H100CT/D
NTSV30H100CT
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
100
V
RRM
RWM
R
V
V
Average Rectified Forward Current
I
A
A
A
F(AV)
(Rated V , T = 116°C)
Per device
30
15
R
C
(Rated V , T = 133°C)
Per diode
R
C
Peak Repetitive Forward Current
(Rated V , Square Wave, 20 kHz, T = 108°C)
I
FRM
Per device
Per diode
60
30
R
C
C
(Rated V , Square Wave, 20 kHz, T = 133°C)
R
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
I
125
FSM
Operating Junction Temperature
T
−40 to +150
−40 to +150
°C
°C
J
Storage Temperature
T
stg
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Rating
Symbol
Value
Unit
Typical Thermal Resistance
Junction−to−Case
Junction−to−Ambient
R
1.4
47
°C/W
°C/W
q
JC
JA
R
q
ELECTRICAL CHARACTERISTICS (Per Leg unless otherwise noted)
Rating
Symbol
Typ
Max
Unit
Maximum Instantaneous Forward Voltage (Note 1)
v
V
F
(I = 5 A, T = 25°C)
0.517
0.579
0.742
−
−
0.85
F
J
(I = 7.5 A, T = 25°C)
F
J
(I = 15 A, T = 25°C)
F
J
(I = 5 A, T = 125°C)
0.471
0.539
0.651
−
−
0.72
F
J
(I = 7.5 A, T = 125°C)
F
J
(I = 15 A, T = 125°C)
F
J
Maximum Instantaneous Reverse Current (Note 1)
(V = 70 V, T = 25°C)
I
R
3.9
4.2
mA
mA
R
J
(V = 70 V, T = 125°C)
R
J
(Rated dc Voltage, T = 25°C)
15.2
10.0
95
30
mA
mA
J
(Rated dc Voltage, T = 125°C)
J
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle v 2.0%
ORDERING INFORMATION
Device
NTSV30H100CTG
Package
Shipping
TO−220AB
(Pb−Free)
50 Units / Rail
www.onsemi.com
2
NTSV30H100CT
TYPICAL CHARACTERISTICS
100
100
10
T = 125°C
A
T = 125°C
A
10
1.0
0.1
T = 150°C
A
T = 150°C
A
T = 25°C
A
T = 25°C
A
1.0
0.1
T = −40°C
A
T = −40°C
A
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.31.4
V , INSTANTANEOUS FORWARD VOLTAGE (V)
F
V , INSTANTANEOUS FORWARD VOLTAGE (V)
F
Figure 1. Typical Instantaneous Forward
Characteristics
Figure 2. Maximum Instantaneous Forward
Characteristics
1.E+00
1.E−01
1.E−02
1.E−03
1.E−04
1.E−05
1.E−06
1.E−07
1.E+00
1.E−01
1.E−02
1.E−03
1.E−04
1.E−05
1.E−06
1.E−07
T = 150°C
A
T = 150°C
A
T = 125°C
A
T = 125°C
A
T = 25°C
A
T = 25°C
A
0
10 20 30 40 50 60 70 80 90 100
0
10 20 30 40 50 60 70 80 90 100
V , INSTANTANEOUS REVERSE VOLTAGE (V)
R
V , INSTANTANEOUS REVERSE VOLTAGE (V)
R
Figure 3. Typical Reverse Characteristics
Figure 4. Maximum Reverse Characteristics
10k
30
25
20
15
10
5
R
= 1.42°C/W
T = 25°C
J
q
JC
DC
Square Wave
1k
100
0
0.1
1
10
100
40 50 60 70 80 90 100 110 120 130 140150
V , REVERSE VOLTAGE (V)
R
T , CASE TEMPERATURE (°C)
C
Figure 5. Typical Junction Capacitance
Figure 6. Current Derating per Leg
www.onsemi.com
3
NTSV30H100CT
TYPICAL CHARACTERISTICS
60
55
50
45
40
35
30
25
20
15
10
5
30
R
= 1.42°C/W
qJC
I
/I = 10
PK AV
I
/I = 5
PK AV
25
20
15
10
5
dc
I
/I = 20
PK AV
Square Wave
Square Wave
dc
T = 150°C
J
0
0
40 50 60 70 80 90 100 110 120 130 140 150
0
4
8
12
16
20
24
T , CASE TEMPERATURE (°C)
C
I , AVERAGE FORWARD CURRENT (A)
F(AV)
Figure 7. Current Derating per Leg
Figure 8. Forward Power Dissipation
10
1
50%
20%
10%
5%
P
(pk)
0.1
t
1
2%
t
2
DUTY CYCLE, D = t /t
1 2
1%
Single Pulse
0.01
0.000001 0.00001 0.0001
0.001
0.01
0.1
1
10
100
1000
t, PULSE TIME (sec)
Figure 9. Typical Transient Thermal Response
www.onsemi.com
4
NTSV30H100CT
PACKAGE DIMENSIONS
TO−220
CASE 221A−09
ISSUE AH
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
SEATING
PLANE
−T−
C
S
B
F
T
INCHES
DIM MIN MAX
MILLIMETERS
4
1
MIN
14.48
9.66
4.07
0.64
3.61
2.42
2.80
0.36
12.70
1.15
4.83
2.54
2.04
1.15
5.97
0.00
1.15
---
MAX
15.75
10.53
4.83
0.96
4.09
2.66
4.10
0.61
14.27
1.52
5.33
3.04
2.79
1.39
6.47
1.27
---
A
B
C
D
F
0.570
0.380
0.160
0.025
0.142
0.095
0.110
0.014
0.500
0.045
0.190
0.100
0.080
0.045
0.235
0.000
0.045
---
0.620
0.415
0.190
0.038
0.161
0.105
0.161
0.024
0.562
0.060
0.210
0.120
0.110
0.055
0.255
0.050
---
A
K
Q
Z
2
3
U
H
G
H
J
K
L
N
Q
R
S
T
L
R
J
V
G
U
V
Z
D
0.080
2.04
N
STYLE 6:
PIN 1. ANODE
2. CATHODE
3. ANODE
4. CATHODE
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NTSV30H100CT/D
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