NTSW60200CTG [ONSEMI]
Schottky Power Rectifier, Dual 60 A 200 V;型号: | NTSW60200CTG |
厂家: | ONSEMI |
描述: | Schottky Power Rectifier, Dual 60 A 200 V |
文件: | 总6页 (文件大小:202K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
NTSW60200CTG
Product Preview
Very Low Forward Voltage
Trench-based Schottky
Rectifier
http://onsemi.com
Exceptionally Low VF = 0.60 V at IF = 10 A
VERY LOW FORWARD
VOLTAGE, LOW LEAKAGE
SCHOTTKY BARRIER
RECTIFIERS 60 AMPERES,
200 VOLTS
Features
• Fine Lithography Trench−based Schottky Technology for Very Low
Forward Voltage and Low Leakage
• Fast Switching with Exceptional Temperature Stability
• Low Power Loss and Lower Operating Temperature
• Higher Efficiency for Achieving Regulatory Compliance
• Low Thermal Resistance
• High Surge Capability
• These Devices are Pb−Free and Halogen Free/BFR Free
PIN CONNECTIONS
1
2
3
Typical Applications
• Switching Power Supplies including Telecom AC to DC Power
Stages
• High Voltage DC−DC Converters
• Freewheeling and OR−ing Diodes
• Output Rectifier in Welding Power Supplies
• Industrial Automation
TO−247
CASE 340L
STYLE 2
1
2
3
Mechanical Characteristics
• Case: Epoxy, Molded
MARKING DIAGRAM
• Epoxy Meets Flammability Rating UL 94−0 @ 0.125 in
• Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
• Lead Temperature for Soldering Purposes: 260°C Maximum for
10 sec
TS60200C
AYWWG
A
Y
= Assembly Location
= Year
WW
G
= Work Week
= Pb−Free Package
This document contains information on a product under development. ON Semiconductor
reserves the right to change or discontinue this product without notice.
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2014
1
Publication Order Number:
April, 2014 − Rev. P1
NTSW60200CT/D
NTSW60200CTG
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
200
V
RRM
RWM
R
V
V
Average Rectified Forward Current
I
A
A
A
F(AV)
(Rated V , T = 112°C) Per device
60
30
R
C
(Rated V , T = 133°C) Per diode
R
C
Peak Repetitive Forward Current
(Rated V , Square Wave, 20 kHz, T = 115°C) Per device
I
FRM
120
60
R
C
C
(Rated V , Square Wave, 20 kHz, T = 128°C) Per diode
R
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
I
300
FSM
Operating Junction Temperature
T
−55 to +150
−55 to +150
°C
°C
J
Storage Temperature
T
stg
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Rating
Symbol
Value
Unit
Typical Thermal Resistance
R
q
JC
Junction−to−Case Per Diode
Junction−to−Case Per Device
0.72
0.63
°C/W
Junction−to−Ambient Per Diode
Junction−to−Ambient Per Device
40.62
40.17
R
q
JA
ELECTRICAL CHARACTERISTICS (Per Leg unless otherwise noted)
Rating
Symbol
Typ
Max
Unit
Instantaneous Forward Voltage (Note 1)
V
F
V
(I = 10 A, T = 25°C)
0.74
0.79
1.04
−
−
1.90
F
J
(I = 15 A, T = 25°C)
F
J
(I = 30 A, T = 25°C)
F
J
(I = 10 A, T = 125°C)
−
−
0.85
F
J
0.60
0.64
0.74
(I = 15 A, T = 125°C)
F
J
(I = 30A, T = 125°C)
F
J
Instantaneous Reverse Current (Note 1)
I
R
(V = 180 V, T = 25°C)
3
5
−
100
mA
mA
R
J
(Rated dc Voltage, T = 25°C)
J
(V = 180 V, T = 125°C)
5.3
7
−
30
mA
mA
R
J
(Rated dc Voltage, T = 125°C)
J
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle v 2.0%
ORDERING INFORMATION
Device
NTSW60200CTG
Package
Shipping
TO−220AB
(Pb−Free, Halide Free)
30 Units / Rail
http://onsemi.com
2
NTSW60200CTG
TYPICAL CHARACTERISTICS
100
100
10
1
T = 125°C
A
10
1
T = 125°C
A
T = 150°C
A
T = 150°C
A
T = 25°C
A
T = 25°C
A
T = −55°C
A
T = −55°C
A
0.1
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0.00
0.40
0.80
1.20
1.60
2.00
2.40
V , INSTANTANEOUS FORWARD VOLTAGE (V)
F
V , INSTANTANEOUS FORWARD VOLTAGE (V)
F
Figure 1. Typical Instantaneous Forward
Characteristics
Figure 2. Maximum Instantaneous Forward
Characteristics
1.E−01
1.E−02
T = 150°C
A
T = 150°C
A
1.E−02
1.E−03
1.E−04
1.E−05
1.E−06
1.E−07
1.E−08
1.E−09
T = 125°C
A
T = 125°C
A
1.E−03
1.E−04
T = 25°C
A
T = 25°C
A
1.E−05
T = −55°C
A
1.E−06
1.E−07
T = −55°C
A
0
20 40 60 80 100 120 140 160 180 200
0
20 40 60 80 100 120 140 160 180 200
V , INSTANTANEOUS REVERSE VOLTAGE (V)
R
V , INSTANTANEOUS REVERSE VOLTAGE (V)
R
Figure 3. Typical Reverse Characteristics
Figure 4. Maximum Reverse Characteristics
10k
1k
60
55
50
45
40
35
30
25
20
15
10
5
R
= 0.72°C/W
T = 25°C
J
q
JC
DC
Square Wave
100
10
1
0
10
V , REVERSE VOLTAGE (V)
100
0
20
40
60
80
100
120
140
T , CASE TEMPERATURE (°C)
C
R
Figure 5. Typical Junction Capacitance
Figure 6. Current Derating per Diode
http://onsemi.com
3
NTSW60200CTG
TYPICAL CHARACTERISTICS
60
120
110
100
90
80
70
60
50
40
30
20
10
0
R
= 0.63°C/W
55
50
45
40
35
30
25
20
15
10
5
q
JC
I /I = 10
PK AV
I /I = 5
PK AV
dc
I /I = 20
PK AV
Square Wave
Square Wave
dc
T = 150°C
J
0
0
20
40
60
80
100
120
140
0
5
10
15
20
25
30
35
40
T , CASE TEMPERATURE (°C)
C
I , AVERAGE FORWARD CURRENT (A)
F(AV)
Figure 7. Current Derating per Device
Figure 8. Forward Power Dissipation
100
10
50%
20%
10%
5%
2%
1
1%
0.1
0.01
0.001
Single Pulse
0.000001 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
t, PULSE TIME (sec)
Figure 9. Typical Transient Thermal Response
http://onsemi.com
4
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247
CASE 340L
ISSUE G
DATE 06 OCT 2021
SCALE 1:1
GENERIC
MARKING DIAGRAM*
XXXXXXXXX
AYWWG
XXXXX = Specific Device Code
STYLE 1:
PIN 1. GATE
STYLE 2:
PIN 1. ANODE
2. CATHODE (S)
STYLE 3:
PIN 1. BASE
2. COLLECTOR
STYLE 4:
PIN 1. GATE
2. COLLECTOR
3. EMITTER
A
Y
= Assembly Location
= Year
2. DRAIN
3. SOURCE
4. DRAIN
3. ANODE 2
4. CATHODES (S)
3. EMITTER
4. COLLECTOR
4. COLLECTOR
WW
G
= Work Week
= Pb−Free Package
STYLE 5:
STYLE 6:
PIN 1. CATHODE
2. ANODE
3. GATE
PIN 1. MAIN TERMINAL 1
2. MAIN TERMINAL 2
3. GATE
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
4. ANODE
4. MAIN TERMINAL 2
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98ASB15080C
TO−247
PAGE 1 OF 1
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