NTTFS008P03P8Z [ONSEMI]
MOSFET, Power 30V P-Channel PQFN8 3.3X3.3;
| 型号： | NTTFS008P03P8Z |
| 厂家： | 
ONSEMI |
| 描述： | MOSFET, Power 30V P-Channel PQFN8 3.3X3.3 |
| 文件： | 总7页 (文件大小：461K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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MOSFET - Power, Single
P-Channel, WDFN8
-30 V, 3.8 mW, -96 A
V
R
I
D
(BR)DSS
DS(on)
3.8 mW @ −10 V
6.5 mW @ −4.5 V
−30 V
−96 A
S (1, 2, 3)
NTTFS008P03P8Z
Features
G (4)
P−Channel
• Ultra Low R
to Improve System Efficiency
• Advanced Package Technology in 3.3x3.3mm for Space Saving and
MOSFET
DS(on)
Excellent Thermal Conduction
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
D (5, 6, 7, 8)
MARKING
DIAGRAM
Typical Applications
• Power Load Switch
• Protection: Reverse Current, Over Voltage, and Reverse Negative
8P03
AYWWZZ
Voltage
WDFN8
CASE 483AW
• Battery Management
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
8P03
A
Y
WW
ZZ
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Lot Traceability Code
Parameter
Drain−to−Source Voltage
Symbol
Value
−30
"25
−96
−69
50
Unit
V
V
DSS
Gate−to−Source Voltage
V
GS
V
Continuous Drain Cur-
T
C
T
C
T
C
= 25°C
= 85°C
= 25°C
I
A
D
rent R
(Notes 1, 2)
q
JC
Steady
State
ORDERING INFORMATION
Power Dissipation R
(Notes 1, 2)
P
W
A
q
D
JC
†
Device
NTTFS008P03P8Z
Package
Shipping
Continuous Drain Cur-
rent R (Notes 1, 2)
T = 25°C
I
−22
−16
2.67
A
D
WDFN8 3000 / Tape &
(Pb−Free) Reel
q
JA
T = 85°C
A
Steady
State
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Power Dissipation R
(Notes 1, 2)
T = 25°C
A
P
W
q
D
JA
Pulsed Drain Current
T = 25°C, t = 10 ms
I
DM
−418
A
A
p
Operating Junction and Storage Temperature
Range
T , T
−55 to
150
°C
J
stg
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
L
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Value
Unit
Junction−to−Case − Steady State (Drain)
(Note 2)
R
2.5
°C/W
q
JC
Junction−to−Ambient − Steady State (Note 2)
R
47
°C/W
q
JA
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2
2. Surface−mounted on FR4 board using a 1 in , 2 oz. Cu pad. Assuming a
76mm x 76mm x 1.6mm board.
© Semiconductor Components Industries, LLC, 2017
1
Publication Order Number:
March, 2023 − Rev. 7
NTTFS008P03P8Z/D
NTTFS008P03P8Z
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
V
GS
= 0 V, I = −250 mA
−30
V
(BR)DSS
D
Drain−to−Source Breakdown Volt-
age Temperature Coefficient
V
/
I
D
= −250 mA, ref to 25°C
−8
mV/°
C
(BR)DSS
T
J
Zero Gate Voltage Drain Current
I
V
DS
= 0 V,
T = 25°C
−1.0
"10
mA
mA
DSS
GS
J
V
= −24 V
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
I
V
= 0 V, V = "25 V
GS
GSS
DS
V
V
= V , I = −250 mA
−1.0
−3.0
V
GS(TH)
GS
DS
D
Threshold Temperature Coefficient
Drain−to−Source On Resistance
V
/T
I = −250 mA, ref to 25°C
D
5.9
2.5
4.3
74
mV/°C
mW
GS(TH)
J
R
V
= −10 V, I = −18 A
3.8
6.5
DS(on)
GS
GS
D
V
= −4.5 V, I = −14 A
D
Froward Transconductance
CHARGES AND CAPACITANCES
Input Capacitance
g
FS
V
DS
= −5 V, I = −14 A
S
D
C
V
GS
= 0 V, f = 1.0 MHz,
DS
5600
1940
1890
134
3
pF
iss
V
= −15 V
Output Capacitance
C
oss
Reverse Transfer Capacitance
Total Gate Charge
C
rss
Q
Q
nC
G(TOT)
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Total Gate Charge
Q
G(TH)
V
GS
= −10 V, V = −15 V,
DS
I
= −14 A
D
Q
15
GS
Q
51
GD
V
= −4.5 V, V = −15 V,
82
G(TOT)
GS
DS
I
= −14 A
D
SWITCHING CHARACTERISTICS, V = 4.5 V (Note 3)
GS
Turn−On Delay Time
Rise Time
t
49
248
95
ns
ns
d(on)
t
r
V
= −4.5 V, V = −15 V,
DS
GS
I
= −14 A, R = 6 W
D
G
Turn−Off Delay Time
Fall Time
t
d(off)
t
f
187
SWITCHING CHARACTERISTICS, V = 10 V (Note 3)
GS
Turn−On Delay Time
Rise Time
t
19
53
d(on)
t
r
V
V
= −10 V, V = −15 V,
DS
GS
I
= −14 A, R = 6 W
D
G
Turn−Off Delay Time
Fall Time
t
201
177
d(off)
t
f
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
= 0 V,
= −14 A
T = 25°C
−0.77
−0.63
52
−1.3
V
SD
GS
J
I
S
T = 125°C
J
Reverse Recovery Time
Charge Time
t
ns
RR
t
t
21
a
V
GS
= 0 V, dl /dt = 100 A/ms,
s
I = −14 A
s
Discharge Time
30
b
Reverse Recovery Charge
Q
31
nC
RR
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
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2
NTTFS008P03P8Z
TYPICAL CHARACTERISTICS
150
140
130
120
110
100
90
150
140
4.0 V
V
DS
= −10 V
130
120
110
100
90
3.5 V
V
GS
= 10 V to 4.5 V
80
70
80
70
60
50
60
50
40
30
40
30
T = 25°C
J
20
10
0
20
10
0
T = 125°C
J
T = −55°C
J
0
0.5
1.0
1.5
2.0
2.5
3.0
0
1.0 1.5 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
−V , DRAIN−TO−SOURCE VOLTAGE (V)
DS
−V , GATE−TO−SOURCE VOLTAGE (V)
GS
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
20
6
5
4
T = 25°C
J
18
16
14
12
10
T = 25°C
D
J
V
= −4.5 V
= −10 V
GS
I
= −18 A
3
2
V
GS
8
6
4
1
0
2
0
3
4
5
6
7
8
9
10
10
30
50
70
90
110
130
150
V
GS
, GATE VOLTAGE (V)
−I , DRAIN CURRENT (A)
D
Figure 3. On−Resistance vs. Gate−to−Source
Figure 4. On−Resistance vs. Drain Current and
Voltage
Gate Voltage
2.0
1.E+05
1.E+04
1.E+03
1.E+02
1.E+01
V
= 10 V
= −18 A
GS
T = 150°C
J
I
D
T = 125°C
J
1.5
1.0
T = 85°C
J
T = 25°C
J
0.5
0
1.E+00
1.E−01
−50 −25
0
25
50
75
100 125 150
5
10
15
20
25
30
T , JUNCTION TEMPERATURE (°C)
J
−V , DRAIN−TO−SOURCE VOLTAGE (V)
DS
Figure 5. On−Resistance Variation with
Figure 6. Drain−to−Source Leakage Current
Temperature
vs. Voltage
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3
NTTFS008P03P8Z
TYPICAL CHARACTERISTICS
10K
10
C
V
= −15 V
= −14 A
ISS
DS
C
C
9
8
7
6
5
4
3
2
OSS
I
D
T = 25°C
J
RSS
1K
Q
Q
GD
GS
V
= 0 V
GS
T = 25°C
f = 1 MHz
J
1
0
100
0.01
0.1
1
10
100
0
20
40
60
80
100
120
140
−V , DRAIN−TO−SOURCE VOLTAGE (V)
DS
Q , TOTAL GATE CHARGE (nC)
G
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
1000
16
14
12
10
8
V
= 0 V
GS
t
d(off)
100
10
1
t
f
t
r
6
t
d(on)
4
T = 125°C
J
V
V
= −10 V
= −15 V
= −14 A
GS
T = 25°C
J
DS
2
0
I
D
T = −55°C
J
1
10
R , GATE RESISTANCE (W)
100
0
0.2
0.4
0.6
0.8
1.0
−V , SOURCE−TO−DRAIN VOLTAGE (V)
G
SD
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
1000
100
10
500 ms
1 ms
T = 25°C
10 ms
100 ms
1 s
A
1
Single Pulse
V
GS
≤ 10 V
R
Limit
0.1
DS(on)
DC
Thermal Limit
Package Limit
0.01
0.1
1
10
100
V
DS
, DRAIN−TO−SOURCE VOLTAGE(V)
Figure 11. Safe Operating Area
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4
NTTFS008P03P8Z
TYPICAL CHARACTERISTICS
100
10
50% Duty Cycle
20%
10%
5%
2%
1%
1
0.1
Single Pulse
0.01
0.000001 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (sec)
Figure 12. Thermal Characteristics
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5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
WDFN8 3.3X3.3, 0.65P
CASE 483AW
ISSUE A
DATE 10 SEP 2019
GENERIC
MARKING DIAGRAM*
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
XXXX = Specific Device Code
A
Y
= Assembly Location
= Year
XXXX
AYWW
WW = Work Week
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13672G
WDFN8 3.3X3.3, 0.65P
PAGE 1 OF 1
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are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
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© Semiconductor Components Industries, LLC, 2018
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