NTTFS4C02NTAG [ONSEMI]
单 N 沟道功率 MOSFET 30V，170A，2.25mΩ;
| 型号： | NTTFS4C02NTAG |
| 厂家： | 
ONSEMI |
| 描述： | 单 N 沟道功率 MOSFET 30V，170A，2.25mΩ |
| 文件： | 总8页 (文件大小：211K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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MOSFET – Power, Single,
N-Channel, m8FL
30 V, 164 A
V
R
MAX
I MAX
D
(BR)DSS
DS(on)
2.25 mW @ 10 V
3.1 mW @ 4.5 V
30 V
164 A
NTTFS4C02N
Features
N−Channel MOSFET
D (5−8)
Low R
to Minimize Conduction Losses
DS(on)
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
G (4)
Compliant
Applications
DC−DC Converters
S (1,2,3)
Power Load Switch
Notebook Battery Management
MAXIMUM RATINGS (T = 25C unless otherwise stated)
MARKING DIAGRAM
1
1
J
S
S
S
G
D
D
D
D
4C02
AYWWG
G
WDFN8
(m8FL)
CASE 511AB
Parameter
Drain−to−Source Voltage
Symbol Value Unit
V
30
20
25
V
V
A
DSS
Gate−to−Source Voltage
V
GS
Continuous Drain
I
D
T = 25C
A
4C02
A
Y
WW
G
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
Current R
(Note 1)
q
JA
T = 85C
A
21
Power Dissipation R
(Note 1)
T = 25C
A
P
2.5
W
A
q
D
JA
Continuous Drain
I
D
T = 25C
A
35
27
5
(Note: Microdot may be in either location)
Current R
(Note 1)
10 s
q
JA
T = 85C
A
Power Dissipation
10 s (Note 1)
T = 25C
A
P
I
W
A
D
D
D
ORDERING INFORMATION
R
Steady
State
q
JA
†
Device
Package
Shipping
Continuous Drain
Current R (Note 2)
T = 25C
A
15
12
1
D
q
JA
T = 85C
A
NTTFS4C02NTAG
WDFN8
(Pb−Free)
1500 / Tape &
Reel
Power Dissipation
(Note 2)
T = 25C
A
P
I
W
A
R
q
JA
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Continuous Drain
Current R (Note 1)
T
C
T
C
T
C
= 25C
= 85C
= 25C
164
127
107
D
q
JC
Power Dissipation
(Note 1)
P
W
R
q
JC
Pulsed Drain Current
T = 25C, t = 10 ms
I
DM
663
A
A
p
Operating Junction and Storage Temperature
T ,
stg
−55 to
+175
C
J
T
Source Current (Body Diode)
I
97
6.0
162
A
S
Drain to Source dV/dt
dV/dt
V/ns
mJ
Single Pulse Drain−to−Source Avalanche Energy
E
AS
(I = 37 A ) (Note 3)
L
pk
Lead Temperature for Soldering Purposes
(1/8 from case for 10 s)
T
L
260
C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
3. This is the absolute maximum ratings. Parts are 100% tested at T = 25C,
J
V
GS
= 10 V, I = 36 A, E = 65 mJ.
L AS
Semiconductor Components Industries, LLC, 2016
1
Publication Order Number:
November, 2022 − Rev. 8
NTTFS4C02N/D
NTTFS4C02N
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Value
1.4
Unit
Junction−to−Case (Drain)
R
q
JC
Junction−to−Ambient – Steady State (Note 4)
Junction−to−Ambient – Steady State (Note 5)
Junction−to−Ambient – (t 10 s) (Note 4)
R
58
q
JA
C/W
R
150
30
q
JA
R
q
JA
4. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
5. Surface−mounted on FR4 board using the minimum recommended pad size.
ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
V
GS
= 0 V, I = 250 mA
30
V
(BR)DSS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/
13.8
(BR)DSS
mV/C
T
J
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
I
V
= 0 V,
T = 25C
1.0
10
10
DSS
GS
DS
J
V
= 24 V
mA
T = 125C
J
I
V
= 0 V,
= 30 V
T = 25C
J
DSS
GSS
GS
DS
mA
V
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
I
V
= 0 V, V = 20 V
100
2.2
nA
DS
GS
V
V
= V , I = 250 mA
1.3
1.6
5.0
1.9
2.7
140
0.9
V
GS(TH)
GS
DS
D
Negative Threshold Temperature Coefficient
Drain−to−Source On Resistance
V
/T
J
mV/C
GS(TH)
R
V
GS
= 10 V
I
I
= 20 A
= 20 A
2.25
3.1
DS(on)
D
mW
V
GS
= 4.5 V
D
Forward Transconductance
Gate Resistance
g
FS
V
= 1.5 V, I = 50 A
S
DS
D
R
W
G
CHARGES AND CAPACITANCES
Input Capacitance
C
2980
1200
55
ISS
Output Capacitance
Reverse Transfer Capacitance
Output Charge
C
V
GS
= 0 V, f = 1 MHz, V = 15 V
pF
nC
OSS
RSS
OSS
DS
C
Q
V
GS
= 0 V, V = 15 V
25
DD
Capacitance Ratio
C
/C
V
GS
= 0 V, V = 15 V, f = 1 MHz
0.018
20
RSS ISS
DS
Total Gate Charge
Q
G(TOT)
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Gate Plateau Voltage
Total Gate Charge
Q
4.7
8.5
4
G(TH)
nC
Q
V
= 4.5 V, V = 15 V; I = 50 A
GS
GD
GP
GS
DS
D
Q
V
2.8
45
V
Q
V
= 10 V, V = 15 V; I = 50 A
nC
G(TOT)
GS
DS
D
SWITCHING CHARACTERISTICS (Note 7)
Turn−On Delay Time
Rise Time
t
12
116
25
d(ON)
t
r
V
= 4.5 V, V = 15 V,
DS
GS
D
ns
I
= 50 A, R = 3.0 W
G
Turn−Off Delay Time
Fall Time
t
d(OFF)
t
f
10
6. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
7. Switching characteristics are independent of operating junction temperatures.
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2
NTTFS4C02N
ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified)
J
Parameter
SWITCHING CHARACTERISTICS (Note 7)
Turn−On Delay Time
Symbol
Test Condition
Min
Typ
Max
Unit
t
9
102
33
6
d(ON)
Rise Time
t
r
V
= 10 V, V = 15 V,
DS
GS
D
ns
I
= 50 A, R = 3.0 W
G
Turn−Off Delay Time
t
d(OFF)
Fall Time
t
f
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
T = 25C
0.8
0.6
42
21
21
28
1.1
SD
J
V
S
= 0 V,
GS
V
I
= 20 A
T = 125C
J
Reverse Recovery Time
Charge Time
t
RR
t
ns
a
V
= 0 V, dI /dt = 100 A/ms,
S
GS
I
S
= 50 A
Discharge Time
t
b
Reverse Recovery Charge
Q
nC
RR
6. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
7. Switching characteristics are independent of operating junction temperatures.
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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3
NTTFS4C02N
TYPICAL CHARACTERISTICS
160
160
140
120
100
80
3.4 V to 10 V
3.2 V
140
120
100
80
V
DS
= 10 V
3.0 V
2.8 V
60
60
T = 25C
J
40
40
2.6 V
20
0
20
0
V
= 2.4 V
GS
T = 125C
J
T = −55C
J
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
, DRAIN−TO−SOURCE VOLTAGE (V)
1.0
1.5
2.0
2.5
3.0
3.5
V
DS
V
, GATE−TO−SOURCE VOLTAGE (V)
GS
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
3.5
3.0
2.5
2.0
6
5
4
3
2
T = 25C
J
T = 25C
J
V
= 4.5 V
GS
I
D
= 20 A
V
= 10 V
GS
1.5
1.0
1
0
3
4
5
6
7
8
9
10
20
40
60
80
100
120
140
160
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 3. On−Resistance vs. Gate−to−Source
Figure 4. On−Resistance vs. Drain Current and
Voltage
Gate Voltage
2
100K
10K
1K
V
= 10 V
= 20 A
GS
1.8
1.6
1.4
1.2
1
I
D
T = 150C
J
T = 125C
J
T = 85C
J
0.8
0.6
0.4
100
10
5
10
15
20
25
30
−50 −25
0
25
50
75
100 125 150 175
T , JUNCTION TEMPERATURE (C)
J
V
, DRAIN−TO−SOURCE VOLTAGE (V)
DS
Figure 5. On−Resistance Variation with
Figure 6. Drain−to−Source Leakage Current
Temperature
vs. Voltage
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4
NTTFS4C02N
TYPICAL CHARACTERISTICS
10K
1K
6
C
ISS
5
4
3
C
OSS
RSS
Q
Q
GS
GD
100
C
2
1
0
10
1
V
DS
= 15 V
V
= 0 V
GS
T = 25C
J
T = 25C
J
I
D
= 50 A
f = 1 MHz
0
5
10
15
20
25
30
0
2
4
6
8
10
12 14 16 18 20
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Q , TOTAL GATE CHARGE (nC)
G
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source vs. Total Charge
1K
100
V
GS
= 0 V
t
r
100
10
t
d(off)
t
d(on)
10
1
V
V
= 4.5 V
= 15 V
= 50 A
GS
t
f
DS
I
D
T = 125C
T = 25C
T = −55C
J
J
J
1
1
10
R , GATE RESISTANCE (W)
100
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
G
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
1K
100
10
1000
T
V
= 25C
C
10 V
GS
T (initial) = 25C
J
100 Single Pulse
100 ms
10
1
DC
1 ms
10 ms
T (initial) = 100C
J
1
R
Limit
0.1
DS(on)
Thermal Limit
Package Limit
0.1
0.01
0.000001
0.00001
0.0001
0.001
0.01
0.01
0.1
1
10
100
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
TIME IN AVALANCHE (s)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. IPEAK vs. Time in Avalanche
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5
NTTFS4C02N
TYPICAL CHARACTERISTICS
100
10
50% Duty Cycle
20%
10%
5%
2%
1%
1
0.1
Single Pulse
0.01
0.000001 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (sec)
Figure 13. Thermal Characteristics
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6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
WDFN8 3.3x3.3, 0.65P
CASE 511AB
1
SCALE 2:1
2X
ISSUE D
DATE 23 APR 2012
NOTES:
0.20
C
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH
PROTRUSIONS OR GATE BURRS.
D
A
B
E
2X
D1
MILLIMETERS
INCHES
NOM
0.030
−−−
0.012
0.20
C
8
1
7
6
5
4
DIM
A
A1
b
c
MIN
0.70
0.00
0.23
0.15
NOM
0.75
−−−
0.30
0.20
MAX
MIN
MAX
0.031
0.002
0.016
0.010
0.80
0.05
0.40
0.25
0.028
0.000
0.009
0.006
4X
q
E1
0.008
D
3.30 BSC
3.05
2.11
3.30 BSC
3.05
1.60
0.30
0.65 BSC
0.41
0.80
0.43
0.130 BSC
0.120
0.083
0.130 BSC
0.120
0.063
0.012
0.026 BSC
0.016
0.032
0.017
0.005
0.059
−−−
D1
D2
E
E1
E2
E3
e
G
K
L
L1
M
2.95
1.98
3.15
2.24
0.116
0.078
0.124
0.088
c
2
3
A1
TOP VIEW
2.95
1.47
0.23
3.15
1.73
0.40
0.116
0.058
0.009
0.124
0.068
0.016
0.10
0.10
C
C
A
C
6X
e
0.012
0.026
0.012
0.002
0.055
0
0.020
0.037
0.022
0.008
0.063
0.30
0.65
0.30
0.06
1.40
0
0.51
0.95
0.56
0.20
1.60
SEATING
PLANE
0.13
1.50
−−−
DETAIL A
SIDE VIEW
DETAIL A
q
12
12
_
_
_
_
8X b
0.10
0.05
C
C
A
B
SOLDERING FOOTPRINT*
8X
e/2
0.42
0.65
4X
L
4X
0.66
PITCH
1
8
4
5
PACKAGE
OUTLINE
K
E2
M
E3
3.60
L1
D2
G
2.30
BOTTOM VIEW
0.57
0.47
0.75
GENERIC
MARKING DIAGRAM*
2.37
3.46
1
XXXXX
DIMENSION: MILLIMETERS
AYWWG
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
G
XXXXX = Specific Device Code
A
Y
= Assembly Location
= Year
WW
G
= Work Week
= Pb−Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON30561E
WDFN8 3.3X3.3, 0.65P
PAGE 1 OF 1
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