NTTFS4C06NTAG [ONSEMI]
Single N-Channel Power MOSFET 30V, 65A, 4.2mΩ;
| 型号： | NTTFS4C06NTAG |
| 厂家： | 
ONSEMI |
| 描述： | Single N-Channel Power MOSFET 30V, 65A, 4.2mΩ |
| 文件： | 总8页 (文件大小：219K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NTTFS4C06N
MOSFET – Power, Single,
N-Channel, m8FL
30 V, 67 A
Features
• Low R
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to Minimize Conduction Losses
DS(on)
• Low Capacitance to Minimize Driver Losses
• Optimized Gate Charge to Minimize Switching Losses
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
V
R
MAX
I MAX
D
(BR)DSS
DS(on)
4.2 mW @ 10 V
6.1 mW @ 4.5 V
30 V
67 A
Applications
N−Channel MOSFET
D (5−8)
• DC−DC Converters
• Power Load Switch
• Notebook Battery Management
MAXIMUM RATINGS (T = 25°C unless otherwise stated)
J
G (4)
Parameter
Drain−to−Source Voltage
Symbol Value Unit
V
DSS
30
20
V
V
A
S (1,2,3)
Gate−to−Source Voltage
V
GS
Continuous Drain
I
D
T = 25°C
18
A
Current R
(Note 1)
q
JA
MARKING DIAGRAM
T = 85°C
A
13
1
Power Dissipation R
(Note 1)
T = 25°C
P
2.16
W
A
q
A
D
JA
1
S
S
S
G
D
D
D
D
4C06
AYWWG
G
WDFN8
(m8FL)
CASE 511AB
Continuous Drain
I
D
T = 25°C
A
25.6
18.5
4.4
Current R
(Note 1)
≤ 10 s
q
JA
T = 85°C
A
Power Dissipation
≤ 10 s (Note 1)
T = 25°C
A
P
I
W
A
D
D
D
4C06
A
Y
WW
G
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
R
Steady
State
q
JA
Continuous Drain
Current R (Note 2)
T = 25°C
A
11
8
D
q
JA
T = 85°C
A
Power Dissipation
(Note 2)
T = 25°C
A
P
I
0.81
W
A
(Note: Microdot may be in either location)
R
q
JA
Continuous Drain
Current R (Note 1)
T
C
T
C
T
C
= 25°C
= 85°C
= 25°C
67
49
31
D
q
JC
ORDERING INFORMATION
Power Dissipation
(Note 1)
P
W
†
Device
Package
Shipping
R
q
JC
NTTFS4C06NTAG
WDFN8
(Pb−Free)
1500 / Tape &
Reel
Pulsed Drain Current
T = 25°C, t = 10 ms
I
DM
166
A
A
p
Operating Junction and Storage Temperature
T ,
−55 to
+150
°C
J
stg
T
NTTFS4C06NTWG WDFN8
5000 / Tape &
Reel
(Pb−Free)
Source Current (Body Diode)
I
S
28
7
A
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Drain to Source dV/dt
dV/dt
V/ns
mJ
Single Pulse Drain−to−Source Avalanche Energy
E
AS
68
(T = 25°C, V = 50 V, V = 10 V, I = 37 A ,
J
DD
GS
L
pk
L = 0.1 mH, R = 25 W) (Note 3)
G
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
L
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
© Semiconductor Components Industries, LLC, 2014
1
Publication Order Number:
June, 2019 − Rev. 1
NTTFS4C06N/D
NTTFS4C06N
2. Surface−mounted on FR4 board using the minimum recommended pad size.
3. This is the absolute maximum ratings. Parts are 100% tested at T = 25°C,
J
V
GS
= 10 V, I = 20 A, E = 20 mJ.
L AS
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Value
4.1
Unit
Junction−to−Case (Drain)
R
q
JC
Junction−to−Ambient – Steady State (Note 4)
Junction−to−Ambient – Steady State (Note 5)
Junction−to−Ambient – (t ≤ 10 s) (Note 4)
R
58
q
JA
°C/W
R
154.3
28.3
q
JA
R
q
JA
4. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
5. Surface−mounted on FR4 board using the minimum recommended pad size.
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
V
= 0 V, I = 250 mA
30
34
V
V
(BR)DSS
GS
D
Drain−to−Source Breakdown Voltage
(transient)
V
V
= 0 V, I
= 12.6 A,
= 100 ns
(BR)DSSt
GS
case
D(aval)
T
= 25°C, t
transient
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/
14.4
(BR)DSS
mV/°C
T
J
Zero Gate Voltage Drain Current
I
V
= 0 V,
= 24 V
T = 25°C
1.0
10
DSS
GS
DS
J
V
mA
T = 125°C
J
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
I
V
= 0 V, V
=
20 V
100
nA
GSS
DS
GS
V
V
= V , I = 250 mA
1.3
2.2
V
GS(TH)
GS
DS
D
Negative Threshold Temperature Coefficient
Drain−to−Source On Resistance
V
/T
3.8
3.4
4.9
58
mV/°C
GS(TH)
J
R
V
= 10 V
I
I
= 30 A
= 30 A
4.2
6.1
DS(on)
GS
D
mW
V
GS
= 4.5 V
D
Forward Transconductance
Gate Resistance
g
FS
V
= 1.5 V, I = 15 A
S
DS
D
R
T = 25°C
A
1.0
W
G
CHARGES AND CAPACITANCES
Input Capacitance
C
1683
841
40
3366
1682
ISS
Output Capacitance
C
V
= 0 V, f = 1 MHz, V = 15 V
pF
nC
OSS
RSS
GS
DS
Reverse Transfer Capacitance
Capacitance Ratio
C
C
/C
V
GS
= 0 V, V = 15 V, f = 1 MHz
0.023
11.6
2.6
RSS ISS
DS
Total Gate Charge
Q
16.2
3.6
6.6
5.6
G(TOT)
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Gate Plateau Voltage
Total Gate Charge
Q
G(TH)
Q
4.7
V
GS
= 4.5 V, V = 15 V; I = 30 A
GS
GD
GP
DS
D
Q
V
4.0
3.1
V
Q
V
GS
= 10 V, V = 15 V; I = 30 A
26
36
nC
G(TOT)
DS
D
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
6. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
7. Switching characteristics are independent of operating junction temperatures.
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2
NTTFS4C06N
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
SWITCHING CHARACTERISTICS (Note 7)
Turn−On Delay Time
Rise Time
Symbol
Test Condition
Min
Typ
Max
Unit
t
10
32
d(ON)
t
r
V
= 4.5 V, V = 15 V,
DS
GS
D
ns
I
= 15 A, R = 3.0 W
G
Turn−Off Delay Time
Fall Time
t
18
d(OFF)
t
f
5.0
8.0
28
Turn−On Delay Time
Rise Time
t
d(ON)
t
r
V
= 10 V, V = 15 V,
DS
GS
ns
V
I
D
= 15 A, R = 3.0 W
G
Turn−Off Delay Time
Fall Time
t
24
d(OFF)
t
f
3.0
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
T = 25°C
0.8
0.63
34
1.1
SD
RR
J
V
S
= 0 V,
= 10 A
GS
I
T = 125°C
J
Reverse Recovery Time
Charge Time
t
t
a
17
ns
V
= 0 V, dIS/dt = 100 A/ms,
GS
I
S
= 30 A
Discharge Time
t
b
17
Reverse Recovery Charge
Q
22
nC
RR
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
6. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
7. Switching characteristics are independent of operating junction temperatures.
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3
NTTFS4C06N
TYPICAL CHARACTERISTICS
80
3.4 V
3.6 V
T = 25°C
J
60
50
40
30
20
10
0
V
DS
= 5 V
70
60
50
40
30
20
10
0
3.2 V
4.0 V to 10 V
3.0 V
2.8 V
T = 125°C
J
2.2 V
2.6 V
2.4 V
T = 25°C
J
T = −55°C
J
0
0.5
1
1.5
2
2.5
3
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
0.020
0.018
0.016
0.014
0.012
0.010
0.008
0.006
0.004
0.002
0.0060
0.0055
0.0050
0.0045
0.0040
0.0035
0.0030
0.0025
0.0020
0.0015
0.0010
I
D
= 30 A
T = 25°C
J
V
= 4.5 V
= 10 V
GS
V
GS
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10
10
20
30
40
50
60
70
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 3. On−Resistance vs. VGS
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1
10000
1000
100
V
GS
= 0 V
I
V
= 30 A
D
= 10 V
T = 150°C
GS
J
T = 125°C
J
T = 85°C
J
0.9
0.8
0.7
10
−50
−25
0
25
50
75
100
125
150
5
10
, DRAIN−TO−SOURCE VOLTAGE (V)
DS
15
20
25
30
T , JUNCTION TEMPERATURE (°C)
V
J
Figure 5. On−Resistance Variation with
Figure 6. Drain−to−Source Leakage Current
Temperature
vs. Voltage
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4
NTTFS4C06N
TYPICAL CHARACTERISTICS
2000
1800
1600
1400
1200
1000
800
10
V
= 0 V
GS
C
Q
iss
T
T = 25°C
J
8
6
4
2
0
C
oss
Q
6
gd
600
T = 25°C
Q
2
J
gs
400
V
V
= 15 V
= 10 V
DD
GS
200
C
rss
I
D
= 30 A
0
0
5
10
15
20
25
30
0
4
8
10 12 14 16 18 20 22 24 26
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Q , TOTAL GATE CHARGE (nC)
g
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
1000
100
10
20
18
16
14
12
10
8
V = 0 V
GS
V
= 15 V
= 15 A
= 10 V
DD
I
D
V
GS
t
d(off)
t
r
t
d(on)
6
T = 125°C
J
4
T = 25°C
J
t
f
2
1.0
0
1
10
R , GATE RESISTANCE (W)
100
0.4
0.5
0.6
0.7
0.8
0.9
1.0
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
G
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
1000
100
10
20
16
12
8
I
D
= 20 A
10 ms
100 ms
1 ms
10 ms
0 V < V < 10 V
Single Pulse
1
GS
T
C
= 25°C
4
0.1
R
Limit
DS(on)
dc
Thermal Limit
Package Limit
0
0.01
0.01
0.1
1
10
100
25
50
75
100
125
15
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
T , STARTING JUNCTION TEMPERATURE (°C)
J
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
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5
NTTFS4C06N
TYPICAL CHARACTERISTICS
100
10
Duty Cycle = 50%
20%
10%
5%
2%
1%
1
0.1
0.01
Single Pulse
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
100
PULSE TIME (sec)
Figure 13. Thermal Response
100
130
120
110
100
90
80
T = 25°C
A
T = 85°C
A
70
60
10
50
40
30
20
10
0
1
1.0E−08 1.0E−07 1.0E−06
0
5
10 15 20 25 30 35 40 45 50 55 60
(A)
1.0E−05 1.0E−04 1.E−03
PULSE WIDTH (SECONDS)
I
D
Figure 14. GFS vs. ID
Figure 15. Avalanche Characteristics
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6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
WDFN8 3.3x3.3, 0.65P
CASE 511AB
1
SCALE 2:1
2X
ISSUE D
DATE 23 APR 2012
NOTES:
0.20
C
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH
PROTRUSIONS OR GATE BURRS.
D
A
B
E
2X
D1
MILLIMETERS
INCHES
NOM
0.030
−−−
0.012
0.20
C
8
1
7
6
5
4
DIM
A
A1
b
c
MIN
0.70
0.00
0.23
0.15
NOM
0.75
−−−
0.30
0.20
MAX
MIN
MAX
0.031
0.002
0.016
0.010
0.80
0.05
0.40
0.25
0.028
0.000
0.009
0.006
4X
q
E1
0.008
D
3.30 BSC
3.05
2.11
3.30 BSC
3.05
1.60
0.30
0.65 BSC
0.41
0.80
0.43
0.130 BSC
0.120
0.083
0.130 BSC
0.120
0.063
0.012
0.026 BSC
0.016
0.032
0.017
0.005
0.059
−−−
D1
D2
E
E1
E2
E3
e
G
K
L
L1
M
2.95
1.98
3.15
2.24
0.116
0.078
0.124
0.088
c
2
3
A1
TOP VIEW
2.95
1.47
0.23
3.15
1.73
0.40
0.116
0.058
0.009
0.124
0.068
0.016
0.10
0.10
C
C
A
C
6X
e
0.012
0.026
0.012
0.002
0.055
0
0.020
0.037
0.022
0.008
0.063
0.30
0.65
0.30
0.06
1.40
0
0.51
0.95
0.56
0.20
1.60
SEATING
PLANE
0.13
1.50
−−−
DETAIL A
SIDE VIEW
DETAIL A
q
12
12
_
_
_
_
8X b
0.10
0.05
C
C
A
B
SOLDERING FOOTPRINT*
8X
e/2
0.42
0.65
4X
L
4X
0.66
PITCH
1
8
4
5
PACKAGE
OUTLINE
K
E2
M
E3
3.60
L1
D2
G
2.30
BOTTOM VIEW
0.57
0.47
0.75
GENERIC
MARKING DIAGRAM*
2.37
3.46
1
XXXXX
DIMENSION: MILLIMETERS
AYWWG
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
G
XXXXX = Specific Device Code
A
Y
= Assembly Location
= Year
WW
G
= Work Week
= Pb−Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON30561E
WDFN8 3.3X3.3, 0.65P
PAGE 1 OF 1
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